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Preliminary Data Sheet PD - 9.1029

IRGPH40M
INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated
Fast IGBT
Features C
• Short circuit rated - 10µs @ 125°C, V GE = 15V
• Switching-loss rating includes all "tail" losses
VCES = 1200V
• Optimized for medium operating frequency (1 to
10kHz) VCE(sat) ≤ 3.4V
G

@VGE = 15V, I C = 18A

E
n-channel
Description
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have
higher usable current densities than comparable bipolar transistors, while at
the same time having simpler gate-drive requirements of the familiar power
MOSFET. They provide substantial benefits to a host of high-voltage, high-
current applications.

These new short circuit rated devices are especially suited for motor control
and other applications requiring short circuit withstand capability.
TO-247AC
Absolute Maximum Ratings
Parameter Max. Units
VCES Collector-to-Emitter Voltage 1200 V
IC @ T C = 25°C Continuous Collector Current 31
IC @ T C = 100°C Continuous Collector Current 18 A
ICM Pulsed Collector Current 62
ILM Clamped Inductive Load Current 62
tsc Short Circuit Withstand Time 10 µs
VGE Gate-to-Emitter Voltage ±20 V
EARV Reverse Voltage Avalanche Energy 15 mJ
PD @ T C = 25°C Maximum Power Dissipation 160 W
PD @ T C = 100°C Maximum Power Dissipation 65
TJ Operating Junction and -55 to +150
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting torque, 6-32 or M3 screw. 10 lbf•in (1.1N•m)

Thermal Resistance
Parameter Min. Typ. Max. Units
RθJC Junction-to-Case — — 0.77
RθCS Case-to-Sink, flat, greased surface — 0.24 — °C/W
RθJA Junction-to-Ambient, typical socket mount — — 40
Wt Weight — 6 (0.21) — g (oz)

Revision 1
C-469

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IRGPH40M
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltage 1200 — — V VGE = 0V, I C = 250µA
V(BR)ECS Emitter-to-Collector Breakdown Voltage 20 — — V VGE = 0V, IC = 1.0A
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage — 1.1 — V/°C VGE = 0V, I C = 1.0mA
VCE(on) Collector-to-Emitter Saturation Voltage — 2.3 3.4 IC = 18A
— 3.0 — V IC = 31A V GE = 15V
— 2.8 — IC = 18A, T J = 150°C
VGE(th) Gate Threshold Voltage 3.0 — 5.5 VCE = VGE, IC = 250µA
∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage — -14 — mV/°C VCE = VGE, IC = 250µA
gfe Forward Transconductance 4.0 10 — S VCE = 100V, I C = 18A
ICES Zero Gate Voltage Collector Current — — 250 µA VGE = 0V, V CE = 1200V
— — 3500 VGE = 0V, V CE = 1200V, T J = 150°C
IGES Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions
Qg Total Gate Charge (turn-on) — 50 75 IC = 18A
Qge Gate - Emitter Charge (turn-on) — 11 21 nC VCC = 400V
Qgc Gate - Collector Charge (turn-on) — 15 30 VGE = 15V
td(on) Turn-On Delay Time — 30 — TJ = 25°C
tr Rise Time — 21 — ns IC = 18A, V CC = 960V
td(off) Turn-Off Delay Time — 400 890 VGE = 15V, R G = 10Ω
tf Fall Time — 390 740 Energy losses include "tail"
Eon Turn-On Switching Loss — 1.1 —
Eoff Turn-Off Switching Loss — 6.3 — mJ
Ets Total Switching Loss — 7.4 14
tsc Short Circuit Withstand Time 10 — — µs VCC = 720V, T J = 125°C
VGE = 15V, R G = 10Ω, VCPK < 1000V
td(on) Turn-On Delay Time — 28 — TJ = 150°C,
tr Rise Time — 24 — ns IC = 18A, V CC = 960V
td(off) Turn-Off Delay Time — 600 — VGE = 15V, R G = 10Ω
tf Fall Time — 870 — Energy losses include "tail"
Ets Total Switching Loss — 15 — mJ
LE Internal Emitter Inductance — 13 — nH Measured 5mm from package
Cies Input Capacitance — 1360 — VGE = 0V
Coes Output Capacitance — 100 — pF VCC = 30V
Cres Reverse Transfer Capacitance — 15 — ƒ = 1.0MHz

Notes:
Repetitive rating; V GE=20V, pulse width Repetitive rating; pulse width limited Pulse width 5.0µs,
limited by max. junction temperature. by maximum junction temperature. single shot.

VCC=80%(V CES), VGE=20V, L=10µH, Pulse width ≤ 80µs; duty factor ≤ 0.1%.
R G= 10Ω

Refer to Section D - page D-13 for Package Outline 3 - JEDEC Outline TO-247AC

C-470

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