37

Expeiment No 8

Chosyacteristics of MOSFET
given MOSFET
the drain and transfen chanactesistics a/ a

To doow
Aim the doraín 1esistance Ct), trans condutta ne gm).
and detrmine

MOSFET ( ZRF 630, 1egulated pouser suppy (D-30V) duual

Appanatus
ammeteH lo-1oomA) 1esístance
channe voltmeter to-2oV),
,

8Head boamd and tonneeting wints.

(KA, 470 K) ,

Formulae O For daain chajactesstits, the value a dynamic susistance

(Yds) by uwsing the fommula -

ds AVas
Ads
for transfen chajacdes1stics, the value af trans conductance Jm)
by using the fomula

Ai

Diagram (o-106)mA

Vos

(o-30v)
Vas
Vs
(o-30v) Vas

gCiruít diagram (MOSFET)

 fxpectel Cwne

Ta
(m) (Mas)
(mA Va

Vay (V)
Vgs(V
ig0: Daeín Chwtartestie
4iy Tuansen Chawnaoirstie

Observations
Aotofn Chatortonstica

whtn V o0S V
S.lo Vos (V) T (mA)

02 0:3
O02
03 12

o31 5

05 53

06 0 77 06

07 J05 06
J32 6
150 06

88 06
0.5

in

* ***************
 V
Vas 0 47
W h e

VDs (V) ID (mA)

SNo

0 05 07
02.
O:44 09
09
04
o66
0:977 O9
05
69
1 09
06
0:9
L3
019
08 J71
9
09 190
2.20
J0

Vas i 0 3 V
3When
Vps (V) I (mA)
S.No.

001 09
02

05 003
O09 3
04
0132
05

66 0 6 6
3
07
33

01
2 07

= for toble
Colculotion Ys AD Ca), = for table 2
a ) s = for toble 3

05- 0 04

044-005 :37 i'9 5 k

:9-0 7 0

3 019
 Tronfe Charoctenstis
Vps 0y V
When

SNo Vos CV) Lp (mA)

0:04
02 3.44
03 3:93
04 4.y2 2
S.02 8
06 22
07 635
2.2
7-44 2 2
09 8 35
2-2
10
2.2

Caleulotions
THans Conductonce Jm 4ld
4Vos
gm L 9-0.4
d 5:02 - 3 44

Im 4
58
Im 0 086 mN-

Result- ynamic Resístonte

(5)
95 kL
a)3 0.2 ka
Tros Conductance
N
(vu) pi
 texmínoul the channu
voltage aHOss the gat
uugsion
thesne 1s no
depletion Mode ulhen

shos ts maximum onducton t(e hesttos when

the
voltage
0 negafive then the chonne wnducfivily
the gafe
eyminas
tttminal
h eilhe positive
Dstein (D
DMain (D)
oelneases

I
Va L Vps
Cnot
() (C)
Sounce CS) 40wce Cs)

P-thanne
N- channel
then
-Dheu thwru s no vwltage acns gat tesm inal
the
erhanemunt male moximum
the device docs not tonduct. hen there s he
the device hous enhanted
onduchivity,
tenminol, then
yvolhage 0tNe thegalu

Aoiations h ertensive heguny

mucle a MosFET ase oréaemly employrd
0 rplilies
Opplications.
these devices.
DC motos ave pnovided hy
@. The megulotion for it acf as prheet for
betause thene have setching speeds
enhaneed
As
the tonstruehon al chappen amplities.

recautions idenlified
identified.
teaminali al the MosFE£T must be torfully
The which are talleel sowrte,
esuminals
MosFET contains fow
0rochiecally
ota in, bat and substöake.
 Expeiment o. 9 SENSORS

RTD
study Chatactesstics af
Thexmisto)s Charoctesstics
Thanmocple Charactrstics

mulimeti,
RTD Pt100), tonoiiner, thesrmoteuple, the Jrmistor, oven,

Arparnatus thexmometen.

Model broph-

Copper
ORTD

plahinum

templt)

Thenmisto r

Temp (°C)

Thermoouple

temp C'C)
Ohsenvation
Charartersties of RTD

S.No Temperartuwre ('t) Resistance CkN)

2 J137
02. 25
112.
03 30 113.8
35 1151

116
H5 118
0. So 119
55 124
0.
23.
65
12
70 126:3
2 75 127.8
13
M9'
4 85 131 3

15 90 133 2

95 135

7 100 13 69

Lo5 13 8
19.

115 142-5
120
2 147
22. 325
16-7
23 13 0
24 135 151
25 153 6
20 45 548
150 1566
 Then
T mistorr
h e r mito
.Chanactershts a

Tempeatune (°c) Resstan ce ( )

S.No 812 10
22 7

30
02 33
905
35
04 879
030
y5
779
So
07 SS
73

675

G25
65
5 82
70
7S
12 502

3 466
85

90
425
/S 3 68

316
17
120 27
3o 233
97
20
75
5) Chmoctenstía af hexmorouple
SMo Temperature (°C) olHage CmV
22.4
33 06

03 42 o9

y5

o5 50 12

55
07 5

6S 8

7b 2.0
75 22

2.
45 26

13 2-8
4 95 30
100 32
36
17 120
13D 46
9

5
 8
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RTD ae lineay. berause plotinum ie PT-1oo

it was

tis a
shetocteisfits at ony partiaulan
fluetuating a Jot
Tcherorteais
valuu d
the Menitonte And then 4
berause deviates from the tlted ling,
the data that got
LemDeTatwre; thromistor.
changed the muHimeten for 4hrrmotouple
anged as Ahown in gnoph it, tor
characteistig af thimisto
ahe derauing the mulHmiton
mulimitin
the
The
ít has hgh 3esistante ? vice vrua . l ou
Now

Jow temperature
Jitle Weuen thon pbevious Dne.
data is
heading uda
fluctuating a
this time the
ae also linean Himefer
hesrmocouple
The churactesristiu
af whfth mea ns the mu

. tHed Sine
deviating om the
usf Anght.
was
in Hnistance
awonked the variaHon
temperatune
neat xoom
lower temperatuwus
t slouer pom
not much noticeable. &
higher to melium temer liu
came down faster from has to be quick
ih veadihg4
Temperature ene
tembeatures ne. et)
dower o r wom 1o0'C
medium +o highen (say
temperatwws ane
the Aesistonte value when

boplitation

0 Applications of RT0
:
the over tempetalie af
contact 2 inshumenta
tion to tack
usedor
tranisbn.
omplifiers
Atablize. for
aHe used to
monitor cngine temp etalirn .
In automptive industny, RTO Aen40
I n medical electrvnícs.

hppliations ofThenmístor;
Hetonigerato.
wrd fhe larms, ovens
in
thesmonetes
wed in digital
Aed or ciwit putection
Aplications f ThesamoLouple
wed in fuwrha te monitiny potns;
to industal
Prom home opplían Ces
e applcations range to
tu food& beveage pooceuing,
T electoic power generation,
solelli'tes & apaceCtaffs.
T&taft engines, Hokeh
 Expeiment 10
Applicotion4 Ttansistod

as a Aoitch anod amplitier.

To study ot tronsísto
fim 2N2222, Bc547, Copatitos Ciouf, 1o0, uf)
Tnansístor
Component 2e9uned
equived - J k , 100A and 10kN), LeD'%.
fa00nens ancd Resisto3s ( 22 K,
y.7kl,

Functioh Generator & Digital

Instu ment dequi ied DC pouer supply, Osolloscope,
multimetin.

às a Switch
A) Totansístor Dc locd dine
bansístor as a scoitch and druw
To understond woking af
Aim
for given cinuit.

Cincuit Diagvam>
MA

for switth ,

1ok
MM Vee

5V

for Ampli fi en a
+12V
CRo
function LouF
enerator 22R

JOuF

(b o.uF

Mgdal gaph
Cnoin

Ban dutidth
bsndawidh 4-f
bs evation Table
S No Vasiable Voltage Vottuge across tollector Collector Cwunt
Vee (V &emten Ve ( V
0 507
0 2
O.472
02 2
3 D.930
03
0'9
04.

05. 5 o 357
0 302 29
6
7 0248 39
07
8 o187 y9
o8.

9 0.128 6:0
09
0O86 70
0

CB). Ttansistor as an amplifier

of ommoh emitHer (ce) amollltr

Am> To obsnve input autput wovefoms ancl plof

at oliffean fiequmcfej
To measUTe gain af amblifier
bequuny uponse.

Ciruit diagys m
+12V

funchon CRO
9enerate
F
BCS47

y7k

loo
00
 Tronsist or a switch
x -axis 1V 1uni+
Ic (mA) vs. Vce (V) - axis 2 mA i unit

8 ***

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0.1 0.2 0.3 0.4 0.5

Vce (V)
m
 Dhsanvothon
o3V
V= 300m V=
nput VoHage,
Cnain in dB
forequency gF Ouhput Volhage nain
S No
CH)
Vo (Vol) A Vo/yV 20 logo

30 48 Oo 67 813
161 33 49 15
60 78
2 79 48 u7:09
J00

2.30 02 340 So:63

200
04
260 3 6667 51'29
400
05
2-78 370 sl36
600
06
2 000 3
I12 373 3 3 S4
SV 6o
360 380
yo00
Sfo
0k
36667 S29
200k
8o0 264 33
3ook 4S17
S6o
Suy 833
40ok 31
50ok 5.70 29 2 17-33

Glalation a hondwidth;

om oph day h 205 ti I12.2Hz

loy fa
5:4S f 201d303 Hz
2017261 H2
Bandewtth > fn -fi e

twvunt = 281726 1 H2
anplifier
Kerult Bandwidth af the amplitrtr
isusion
. Tronsistor suitthes con be used o sunth ond cordrol bnps, veluys er etven mt
. When uing the dipolar tronsistor at a Awtth they must be eiher "ully qf
Or "fully N",
TnansisBos that ae fully 'o PP" ane suícd to be în their cut o rgicn.
TMansistos that ane fully on" ne Aoid to be in their Auturation gion.
: When uwing he honais tor as a soitth a small hase cuwunt tontyoli a

much Ja1gtn tollector Joad cwront,