Switching Diodes 2SK1609

MA153, MA153A
Silicon epitaxial planer type
Unit : mm
For switching circuits +0.2
2.8 –0.3
+0.25
0.65±0.15 1.5 –0.05 0.65±0.15

■ Features

1.45
● Small capacity between pins, Ct

0.95
1

2.9 –0.05

1.9±0.2
+0.2
● Series connection in package

0.95
3

0.4 –0.05
+0.1
2

0.16 –0.06
+0.1
■ Absolute Maximum Ratings (Ta= 25˚C)

+0.2
1.1 –0.1

0.8
Parameter Symbol Rating Unit 0.1 to 0.3

0 to 0.1
0.4±0.2
MA153 VR 40
Reverse voltage (DC) V
MA153A VRM 80
1 : Anode 1
MA153 40 2 : Cathode 2
Peak reverse voltage IF V
MA153A 80 3 : Anode 2 JEDEC : TO-236
0ÅCathode 1 EIAJ : SC-59
Single 100 Mini Type Package (3-pin)
Forward current (DC) IFM mA
Series 65
Single
IFSM
200 ■ Internal Connection
Peak forward current mA
Series 130
Junction temperature Tj 150 ˚C
1
Storage temperature Tstg – 55 to +150 ˚C
3
2

■ Electrical Characteristics (Ta= 25˚C)

Parameter Symbol Condition min typ max Unit
MA153 VR= 40V 0.1
Reverse current (DC) IR µA
MA153A VR= 75V 0.1
Forward voltage (DC) VF IF=100mA 1.2 V
MA153 40
Reverse voltage (DC) VR IR=100µA V
MA153A 80
Terminal capacitance Ct VR= 0V, f=1MHz 5 pF
trr IF=10mA, VR= 6V
150 ns
(2 to 3 pins) Irr= 0.1 · IR, RL=100Ω
Reverse recovery time
trr IF=10mA, VR= 6V
9 ns
(1 to 3 pins) Irr= 0.1 · IR, RL=100Ω
❖ Rated input/output frequency : 100MHz

■ Marking ■ Marking (Example)

Type No. MA153 MA153A
Symbol MC MP
MC

(MA153)
 Switching Diodes MA153, MA153A

IF – VF IF – VF IR – V R
103 103 103
Ta=25˚C Ta=25˚C
D2(3-2)
D1 (1-3)
D1(1-3) 3 D2(3-2)
D1(1-3)
102 3 102 102 Ta=125˚C
1 2 D2 (3-2)
Forward current IF (mA)

Forward current IF (mA)

Reverse current IR (µA)

1 2

10 10 10 3

D1 (1-3) D2 (3-2)
1 2
1 1 1

10–1 10–1 10–1

D1 (1-3)

Ta=25˚C D2 (3-2)
10–2 10–2 10–2
0 0.2 0.4 0.6 0.8 1.0 1.2 0 0.2 0.4 0.6 0.8 1.0 1.2 0 10 20 30 40 50
Forward voltage VF (V) Forward voltage VF (V) Reverse voltage VR (V)

IR – VR VF – Ta VF – Ta
1.0 1.0
D1 (1-3)
10 Ta=125˚C

0.8 0.8
D2 (3-2) IF=10mA
Reverse current IR (µA)

Forward voltage VF (V)

Forward voltage VF (V)

1 IF=10mA
3 3mA
0.6 0.6
1mA
D1 (1-3) D2 (3-2) 3mA
10–1
1 2 1mA 3 0.1mA
0.4 0.4
3 D2 (3-2)
10–2 0.1mA
D1 (1-3) 1 2
D1 (1-3)
Ta=25˚C D2 (3-2) 0.2 0.2
1 2
10–3

0 0
0 20 40 60 80 100 –40 0 40 80 120 160 –40 0 40 80 120 160
Reverse voltage VR (V) Ambient temperature Ta (˚C) Ambient temperature Ta (˚C)

IR – Ta IR – Ta Ct – VR
102 103
VR=40V f=1MHz
3 Ta=25˚C
40V
D1 (1-3) D2 (3-2) 5
D1 (1-3)
10 VR=80V 102 3
1 2
Terminal capacitance Ct (pF)

3
D1 (1-3) D2 (3-2) 3
Reverse current IR (nA)

Reverse current IR (µA)

80V 2
D1 (1-3) 1 2 D1(1-3) D2(3-2)
1 10
40V D2 (3-2) 1 2
1 D2(3-2)

10–1 D2 (3-2) 1
0.5
D1(1-3)

0.3
10–2 10–1
0.2

10–3 10–2 0.1

–40 0 40 80 120 –40 0 40 80 120 0 10 20 30 40 50
Ambient temperature Ta (˚C) Ambient temperature Ta (˚C) Reverse voltage VR (V)