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J Series

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0% found this document useful (0 votes)
7 views2 pages

J Series

Uploaded by

hanrong912
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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Intelligent Technology. Better Future.

J-SERIES
Silicon Photomultiplier Sensors, J-Series (SiPM)

Product Overview
For complete documentation, see the data sheet.
ON Semiconductor's J-Series silicon photomultiplier (SiPM) sensors have been optimized for high-performance timing applications,
such as ToF-PET (time of flight positron emission tomography). Due to increased microcell density, J-Series sensors can achieve a
photon detection efficiency (PDE) of 50% and with sensitivity extending down into the UV. They feature industry-leading low dark
count rates of 50 kHz/mm2 and because the sensors are created using a high-volume CMOS silicon process they feature an
exceptional breakdown voltage uniformity of ±250 mV.
J-Series sensors are available in 3 mm, 4 mm and 6 mm sizes packaged in a TSV chip scale package that is compatible with
industry standard, lead-free, reflow soldering processes. J-Series sensors also feature ON Semiconductor's unique fast output for
fast timing capability.

Features
• High-density microcells

• J-Series sensors feature ON Semiconductor's unique 'fast output' terminal

• Temperature stability of 21.5 mV/°C

• Exceptional breakdown voltage uniformity of ±250 mV

• Available in a reflow solder compatible TSV chip-scale package

• Ultra-low dark count rates of 50 kHz/mm2 typical

• Optimized for high-performance timing applications, such as ToF-PET

• 3 mm, 4 mm and 6 mm sensor sizes

Applications End Products


• Medical Imaging • Positron Emission Tomography
• Hazard & Threat • Radiation Detection
• 3D Ranging & Sensing
• Biophotonics & Sciences
• High Energy Physics

J-SERIES Silicon Photomultiplier Sensors, J-Series (SiPM) pg 1 / 2


Part Electrical Specifications
DCR
@
Opti PDE
Activ Typic
mize @
e Micr al MSL
Array d Max Pack Case Cont Cont
Area ocell Over MSL Tem
Product Status Compilance Type Form Wav Over age Outli ainer ainer
Dime Size volta Type p
at eleng volta Type ne Type Qty.
nsion (µm) ge (°C)
th ge
s (KHz2
(nm) (%) /mm
)

3 570C
MICROFJ- Singl ~NA mm x ODC
Active 20 420 38 50 S.PD 3 260 REEL 3000
30020-TSV-TR e ~ 3 SP-8 F
mm

3
MICROFJ- 570C
Singl ~NA mm x ODC
30020-TSV- Active 20 420 38 50 S.PD 4 260 REEL 1
e ~ 3 SP-8
TR1 F
mm

3 570C
MICROFJ- Singl ~NA mm x ODC
Active 35 420 50 50 S.PD 3 260 REEL 3000
30035-TSV-TR e ~ 3 SP-8 F
mm

3
MICROFJ- 570C
Singl ~NA mm x ODC
30035-TSV- Active 35 420 50 50 S.PD 4 260 REEL 1
e ~ 3 SP-8
TR1 F
mm

4 ODC 570C
MICROFJ- Singl ~NA mm x
Active 35 420 50 50 SP- N.PD 3 260 REEL 3000
40035-TSV-TR e ~ 4 16 F
mm

4
MICROFJ- ODC 570C
Singl ~NA mm x
40035-TSV- Active 35 420 50 50 SP- N.PD 4 260 REEL 1
e ~ 4
TR1 16 F
mm

6 ODC 570C
MICROFJ- Singl ~NA mm x
Active 35 420 50 50 SP- P.PD 3 260 REEL 3000
60035-TSV-TR e ~ 6 36 F
mm

6
MICROFJ- ODC 570C
Singl ~NA mm x
60035-TSV- Active 35 420 50 50 SP- P.PD 4 260 REEL 1
e ~ 6
TR1 36 F
mm

J-SERIES Silicon Photomultiplier Sensors, J-Series (SiPM) pg 2 / 2

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