2CL2FP 80mA 30kV 100nS
High Voltage Silicon Rectifier Diode
----------------------------------------------------------------------------------------------------------------------------- -------
INTRODUCE: SHAPE DISPLAY:
HVGT high voltage silicon rectifier diodes is made
of high quality silicon wafer chip and high
reliability epoxy resin sealing structure, and
through professional testing equipment inspection
qualified after to customers.
FEATURES:
1. High reliability design.
2. Small volume.
3. High frequency.
4. Conform to RoHS and SGS. SIZE: (Unit:mm) HVGT NAME: DO-415
5. Epoxy resin molded in vacuumHave
anticorrosion in the surface.
APPLICATIONS:
1. High voltage multiplier circuit
2. Electrostatic generator circuit .
3. General purpose high voltage rectifier.
4. Negative ion generator.
MECHANICAL DATA:
1. Case: epoxy resin molding.
2. Terminal: welding axis.
3. Net weight: 0.65 grams (approx).
MAXIMUM RATINGS AND CHARACTERISTICS: (Absolute Maximum Ratings)
Items Symbols Condition Data Value Units
Repetitive Peak Renerse Voltage VRRM TA=25°C 30 kV
Non-Repetitive Peak Renerse Voltage VRSM TA=25°C -- kV
TA=40°C 80 mA
Average Forward Current Maximum IFAVM
TOIL=55°C 140 mA
Non-Repetitive Forward Surge Current IFSM TA=25°C; 50Hz Half-Sine Wave; 8.3mS 10 A
Junction Temperature TJ 125 °C
Allowable Operation Case Temperature Tc -40~+125 °C
Storage Temperature TSTG -40~+125 °C
ELECTRICAL CHARACTERISTICS: TA=25°C (Unless Otherwise Specified)
Items Symbols Condition Data value Units
Maximum Forward Voltage Drop VFM at 25°C; at IFAVM 46 V
IR1 at 25°C; at VRRM 2.0 uA
Maximum Reverse Current
IR2 at 100°C; at VRRM 50 uA
Maximum Reverse Recovery Time TRR at 25°C; IF=0.5IR; IR =IFAVM; IRR =0.25IR 100 nS
Junction Capacitance CJ at 25°C; VR=0V; f=1MHz 1.1 pF
GETE ELECTRONIC CO.,LTD Http://www.getedz.com Http://www.hvgtsemi.com E-mai: sales@getedz.com
GETAI ELECTRONIC DEVICE CO.,LTD TEL:0086-20-8184 9628 FAX:0086-20-8184 9638 2017-10 1 / 2
2CL2FP 80mA 30kV 100nS
High Voltage Silicon Rectifier Diode
----------------------------------------------------------------------------------------------------------------------------- -------
Fig 1 Fig 2
Forward Current Derating Curve Reverse Recovery Measurement Waveform
Typical data capture points: IF =0.5IR , IR,IRR =0.25IR
IR is typically the rated average forward current maximum
(IFAVM) of the D.U.T
Fig 3
Non-Repetitive Surge Current
Cycles (50Hz)
Type Code Cathode Mark
Marking 2CL2FP
2CL2FP HVGT
GETE ELECTRONIC CO.,LTD Http://www.getedz.com Http://www.hvgtsemi.com E-mai: sales@getedz.com
GETAI ELECTRONIC DEVICE CO.,LTD TEL:0086-20-8184 9628 FAX:0086-20-8184 9638 2017-10 2 / 2