KSH127

KSH127

D-PAK for Surface Mount Applications

• High DC Current Gain
• Built-in a Damper Diode at E-C
• Lead Formed for Surface Mount Applications (No Suffix)
• Straight Lead (I-PAK, “ - I “ Suffix)
1 D-PAK 1 I-PAK
• Electrically Similar to Popular TIP127
• Complement to KSH122 1.Base 2.Collector 3.Emitter

PNP Silicon Darlington Transistor

Absolute Maximum Ratings TC=25°C unless otherwise noted Equivalent Circuit
C
Symbol Parameter Value Units
VCBO Collector-Base Voltage - 100 V
VCEO Collector-Emitter Voltage - 100 V
B
VEBO Emitter-Base Voltage -5 V
IC Collector Current (DC) -8 A
ICP Collector Current (Pulse) - 16 A
IB Base Current - 120 mA R1 R2
PC Collector Dissipation (TC=25°C) 20 W
R 1 ≅ 8 kΩ E
Collector Dissipation (Ta=25°C) 1.75 W R 2 ≅ 0.12 k Ω
TJ Junction Temperature 150 °C
TSTG Storage Temperature - 65 ~ 150 °C

Electrical Characteristics TC=25°C unless otherwise noted

Symbol Parameter Test Condition Min. Max. Units
VCEO(sus) *Collector-Emitter Sustaining Voltage IC = - 30mA, IB = 0 - 100 V
ICEO Collector Cut-off Current VCE = - 50V, IB = 0 - 10 µA
ICBO Collector Cut-off Current VCB = - 100V, IE = 0 - 10 µA
IEBO Emitter Cut-off Current VEB = - 5V, IC = 0 -2 mA
hFE *DC Current Gain VCE = - 4V, IC = - 4A 1000 12K
VCE = - 4V, VEB = -8A 100
VCE(sat) *Collector-Emitter Saturation Voltage IC = - 4A, IB = - 16mA -2 V
IC = - 8A, IB = - 80mA -4 V
VBE(sat) *Base-Emitter Saturation Voltage IC = - 8A, IB = - 80mA - 4.5 V
VBE(on) *Base-Emitter On Voltage VCE = -4V, IC = - 4A - 2.8 V
Cob Output Capacitance VCB = - 10V, IE = 0 300 pF
f= 0.1MHz
* Pulse Test: PW≤300µs, Duty Cycle≤2%

©2002 Fairchild Semiconductor Corporation Rev. A4, October 2002

 KSH127
Typical Characteristics

VBE(sat), VCE(sat)[V], SATURATION VOLTAGE

10k -10

VCE = -4V IC = 250 IB

VBE(sat)
hFE, DC CURRENT GAIN

-1
V CE(sat)

1k

-0.1

100 -0.01
-0.1 -1 -10 -0.1 -1 -10 -100

IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT

Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage

Collector-Emitter Saturation Voltage

1000 10
VCC= -30V
IC= 250IB
IB1= -IB2
tR,tD [µs], TURN ON TIME
Cob[pF], CAPACITANCE

100 1

tR

tD, VBE(off)=0
10
0.1

1
-0.1 -1 -10 -100 0.01
-0.1 -1 -10

VCB[V], COLLECTOR BASE VOLTAGE IC[A], COLLECTOR CURRENT

Figure 3. Collector Output Capacitance Figure 4. Turn On Time

10 -100

VCC= -30V
IC= 250IB
IB1= -IB2
tSTG,tF [µs], TURN OFF TIME

IC[A], COLLECTOR CURRENT

-10 10
0µ
50 s
tSTG 0µ
s
1m
5m s
-1
D s C
1

tF
-0.1

-0.01
0.1 -1 -10 -100 -1000
-0.1 -1 -10

IC[A], COLLECTOR CURRENT VCE[V], COLLECTOR-EMITTER VOLTAGE

Figure 5. Turn Off Time Figure 6. Safe Operating Area

©2002 Fairchild Semiconductor Corporation Rev. A4, October 2002

 KSH127
Typical Characteristic (Continued)

25

20
PC[W], POWER DISSIPATION

15

10

0
0 25 50 75 100 125 150 175

o
TC[ C], CASE TEMPERATURE

Figure 7. Power Derating

©2002 Fairchild Semiconductor Corporation Rev. A4, October 2002

 KSH127
Package Dimensions

D-PAK

6.60 ±0.20

0.70 ±0.20
5.34 ±0.30 2.30 ±0.10
(0.50) (4.34) (0.50) 0.50 ±0.10
0.60 ±0.20

6.10 ±0.20

0.91 ±0.10
9.50 ±0.30
2.70 ±0.20

MIN0.55
0.80 ±0.20

0.89 ±0.10
MAX0.96 0.76 ±0.10
0.50 ±0.10

2.30TYP 2.30TYP 1.02 ±0.20

[2.30±0.20] [2.30±0.20] 2.30 ±0.20

6.60 ±0.20
(5.34)
(0.70)
(0.90)
(1.00)
(5.04)
(1.50)
(3.05)
6.10 ±0.20

(2XR0.25)
9.50 ±0.30

2.70 ±0.20

(0.10)

0.76 ±0.10

Dimensions in Millimeters

©2002 Fairchild Semiconductor Corporation Rev. A4, October 2002

 KSH127
Package Dimensions (Continued)

I-PAK
6.60 ±0.20 2.30 ±0.20
5.34 ±0.20
(0.50) (4.34) (0.50) 0.50 ±0.10
±0.20

±0.20

±0.20
0.60

0.70

6.10
±0.10

±0.30
0.80

16.10
±0.20

±0.30

MAX0.96
1.80

9.30

0.76 ±0.10

2.30TYP 2.30TYP 0.50 ±0.10

[2.30±0.20] [2.30±0.20]

Dimensions in Millimeters

©2002 Fairchild Semiconductor Corporation Rev. A4, October 2002

 TRADEMARKS

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intended to be an exhaustive list of all such trademarks.

ACEx™ FACT™ ImpliedDisconnect™ PACMAN™ SPM™

ActiveArray™ FACT Quiet series™ ISOPLANAR™ POP™ Stealth™
Bottomless™ FAST® LittleFET™ Power247™ SuperSOT™-3
CoolFET™ FASTr™ MicroFET™ PowerTrench® SuperSOT™-6
CROSSVOLT™ FRFET™ MicroPak™ QFET™ SuperSOT™-8
DOME™ GlobalOptoisolator™ MICROWIRE™ QS™ SyncFET™
EcoSPARK™ GTO™ MSX™ QT Optoelectronics™ TinyLogic™
E2CMOS™ HiSeC™ MSXPro™ Quiet Series™ TruTranslation™
EnSigna™ I2C™ OCX™ RapidConfigure™ UHC™
Across the board. Around the world.™ OCXPro™ RapidConnect™ UltraFET®
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CORPORATION.
As used herein:
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PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In This datasheet contains the design specifications for
Design product development. Specifications may change in
any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

©2002 Fairchild Semiconductor Corporation Rev. I1