INA199

SBOS469H – APRIL 2009 – REVISED OCTOBER 2023

INA199 26-V, Bidirectional, Zero-Drift, Low- or High-Side,

Voltage-Output, Current-Shunt Monitor

1 Features 3 Description
• Wide Common-Mode Range: –0.3 V to 26 V The INA199 series of voltage-output, current-shunt
• Offset Voltage: ±150 μV (Maximum) monitors (also called current-sense amplifiers) are
(Enables Shunt Drops of 10-mV Full-Scale) commonly used for overcurrent protection, precision-
• Accuracy: current measurement for system optimization, or in
– Gain Error (Maximum Over Temperature): closed-loop feedback circuits. This series of devices
• ±1% (C Version) can sense drops across shunt resistors at common-
• ±1.5% (A and B Versions) mode voltages from –0.3 V to 26 V, independent of
– 0.5-μV/°C Offset Drift (Maximum) the supply voltage. Three fixed gains are available:
– 10-ppm/°C Gain Drift (Maximum) 50 V/V, 100 V/V, and 200 V/V. The low offset of the
• Choice of Gains: zero-drift architecture enables current sensing with
– INA199x1: 50 V/V maximum drops across the shunt as low as 10-mV
– INA199x2: 100 V/V full-scale.
– INA199x3: 200 V/V These devices operate from a single 2.7-V to 26-
• Quiescent Current: 100 μA (Maximum) V power supply, drawing a maximum of 100 µA
• Packages: 6-Pin SC70, 10-Pin UQFN of supply current. All versions are specified from –
40°C to 125°C, and offered in both SC70-6 and thin
2 Applications
UQFN-10 packages.
• Notebook Computers
• Cell Phones Device Information
• Qi-Compliant Wireless Charging Transmitters PART NUMBER PACKAGE(1) BODY SIZE (NOM)
• Telecom Equipment SC70 (6) 2.00 mm × 1.25 mm
INA199
• Power Management UQFN (10) 1.80 mm × 1.40 mm
• Battery Chargers
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
RSHUNT
Reference Supply Load
Voltage

REF OUT Output

GND R1 R3 IN-

2.7 V to 26 V IN+
V+
R2 R4
CBYPASS
0.01 mF
to
0.1 mF

Simplified Schematic

An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
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Table of Contents
1 Features............................................................................1 8 Application and Implementation.................................. 18
2 Applications..................................................................... 1 8.1 Application Information............................................. 18
3 Description.......................................................................1 8.2 Typical Applications.................................................. 18
4 Device Comparison Table...............................................3 9 Power Supply Recommendations................................21
5 Pin Configuration and Functions...................................3 10 Layout...........................................................................21
6 Specifications.................................................................. 4 10.1 Layout Guidelines................................................... 21
6.1 Absolute Maximum Ratings........................................ 4 10.2 Layout Example...................................................... 21
6.2 ESD Ratings............................................................... 4 11 Device and Documentation Support..........................22
6.3 Recommended Operating Conditions.........................5 11.1 Documentation Support.......................................... 22
6.4 Thermal Information....................................................5 11.2 Receiving Notification of Documentation Updates.. 22
6.5 Electrical Characteristics.............................................6 11.3 Support Resources................................................. 22
6.6 Typical Characteristics................................................ 7 11.4 Trademarks............................................................. 22
7 Detailed Description...................................................... 11 11.5 Electrostatic Discharge Caution.............................. 22
7.1 Overview................................................................... 11 11.6 Glossary.................................................................. 22
7.2 Functional Block Diagram......................................... 11 12 Revision History.......................................................... 23
7.3 Feature Description...................................................12 13 Mechanical, Packaging, and Orderable
7.4 Device Functional Modes..........................................13 Information.................................................................... 24

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4 Device Comparison Table

PRODUCT GAIN R3 AND R4 R1 AND R2
INA199x1 50 20 kΩ 1 MΩ
INA199x2 100 10 kΩ 1 MΩ
INA199x3 200 5 kΩ 1 MΩ

5 Pin Configuration and Functions

(1)
NC V+
REF 1 6 OUT
7 6
GND 2 5 IN- REF 8 5 IN-

V+ 3 4 IN+
GND 9 4 IN-

Figure 5-1. DCK Package 6-Pin SC70 Top View OUT 10 3 IN+
1 2

(1)
NC IN+
Figure 5-2. RSW Package 10-Pin UQFN Top View

A. NC(1) denotes no internal connection. These pins can be left floating or connected to any voltage between GND and V+.

Table 5-1. Pin Functions

PIN
I/O DESCRIPTION
NAME SC70 UQFN
GND 2 9 Analog Ground
IN– 5 4, 5 Analog input Connect to load side of shunt resistor.
IN+ 4 2, 3 Analog input Connect to supply side of shunt resistor.
NC — 1, 7 — Not internally connected. Leave floating or connect to ground.
OUT 6 10 Analog output Output voltage
REF 1 8 Analog input Reference voltage, 0 V to V+
V+ 3 6 Analog Power supply, 2.7 V to 26 V

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6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)(1)
MIN MAX UNIT
Supply voltage 26 V
Differential (VIN+) – (VIN–) –26 26
Analog inputs, VIN+, VIN– (2) Common-mode(3), INA199Ax GND – 0.3 26 V
Common-mode(3), INA199Bx and INA199Cx GND – 0.1 26
REF input GND – 0.3 (V+) + 0.3 V
Output(3) GND – 0.3 (V+) + 0.3 V
Input current Into all pins(3) 5 mA
Operating temperature –40 125 °C
Junction temperature 150 °C
Storage temperature, Tstg –65 150 °C

(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress
ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under
Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability.
(2) VIN+ and VIN– are the voltages at the IN+ and IN– pins, respectively.
(3) Input voltage at any pin c an exceed the voltage shown if the current at that pin is limited to 5 mA.

6.2 ESD Ratings

VALUE UNIT
INA199A1, INA199A2, and INA199A3 in DCK and RSW Packages
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000
V(ESD) Electrostatic discharge V
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±1000
INA199Bx and INA199Cx in DCK and RSW Packages
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±3500
V(ESD) Electrostatic discharge V
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±1000

(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

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6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN NOM MAX UNIT
VCM Common-mode input voltage 12 V
VS Operating supply voltage (applied to V+) 5 V
TA Operating free-air temperature –40 125 °C

6.4 Thermal Information

INA199
THERMAL METRIC(1) DCK (SC70) RSW (UQFN) UNIT
6 PINS 10 PINS
RθJA Junction-to-ambient thermal resistance 227.3 107.3 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 79.5 56.5 °C/W
RθJB Junction-to-board thermal resistance 72.1 18.7 °C/W
ψJT Junction-to-top characterization parameter 3.6 1.1 °C/W
ψJB Junction-to-board characterization parameter 70.4 18.7 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance — — °C/W

(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.

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6.5 Electrical Characteristics

at TA = 25°C, VS = 5 V, VIN+ = 12 V, VSENSE = VIN+ – VIN–, and VREF = VS / 2 (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
INPUT
Version A, TA = –40°C to 125°C –0.3 26
VCM Common-mode input range V
Version B and C, TA = –40°C to 125°C –0.1 26
VIN+ = 0 V to 26 V, VSENSE = 0 mV,
CMR Common-mode rejection 100 120 dB
TA = –40°C to 125°C
VOS Offset voltage, RTI(1) VSENSE = 0 mV ±5 ±150 μV
dVOS/dT VOS vs temperature TA = –40°C to 125°C 0.1 0.5 μV/°C
VS = 2.7 V to 18 V,
PSR Power supply rejection ±0.1 μV/V
VIN+ = 18 V, VSENSE = 0 mV
IB Input bias current VSENSE = 0 mV 28 μA
IOS Input offset current VSENSE = 0 mV ±0.02 μA
OUTPUT
INA199x1 50
G Gain INA199x2 100 V/V
INA199x3 200
Version A and B, VSENSE = –5 mV to
±0.03% ±1.5%
5 mV, TA = –40°C to 125°C
Gain error
Version C, VSENSE = –5 mV to 5 mV,
±0.03% ±1%
TA = –40°C to 125°C
Gain error vs temperature TA = –40°C to 125°C 3 10 ppm/°C
Nonlinearity error VSENSE = –5 mV to 5 mV ±0.01%
Maximum capacitive load No sustained oscillation 1 nF
VOLTAGE OUTPUT(2)
(V+) – (V+) –
Swing to V+ power-supply rail RL = 10 kΩ to GND, TA = –40°C to 125°C V
0.05 0.2
(VGND) + (VGND) +
Swing to GND RL = 10 kΩ to GND, TA = –40°C to 125°C V
0.005 0.05
FREQUENCY RESPONSE
CLOAD = 10 pF, INA199x1 80
GBW Bandwidth CLOAD = 10 pF, INA199x2 30 kHz
CLOAD = 10 pF, INA199x3 14
SR Slew rate 0.4 V/μs
NOISE, RTI(1)
Voltage noise density 25 nV/√ Hz
POWER SUPPLY
TA = –40°C to 125°C 2.7 26
VS Operating voltage range V
–20°C to 85°C 2.5 26
IQ Quiescent current VSENSE = 0 mV 65 100 μA
IQ over temperature TA = –40°C to 125°C 115 μA
TEMPERATURE RANGE
Specified range –40 125 °C
Operating range –40 125 °C
SC70 250
θJA Thermal resistance °C/W
UQFN 80

(1) RTI = Referred-to-input.

(2) See Typical Characteristic curve, Output Voltage Swing vs Output Current (Figure 6-6).

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6.6 Typical Characteristics

performance measured with the INA199A3 at TA = 25°C, VS = 5 V, VIN+ = 12 V, and VREF = VS / 2 (unless otherwise noted)

20 1.0

15 0.8
0.6
10
Offset Voltage (mV)

0.4

CMRR (mV/V)
5 0.2
0 0

-5 -0.2
-0.4
-10
-0.6
-15
-0.8
-20 -1.0
-50 -25 0 25 50 75 100 125 -50 -25 0 25 50 75 100 125
Temperature (°C) Temperature (°C)
Figure 6-1. Offset Voltage vs Temperature Figure 6-2. Common-Mode Rejection Ratio vs Temperature
70 160

60 140
G = 200
50 120

40 100
|PSR| (dB)
Gain (dB)

30 80
G = 50 G = 100
20 60

10 40 VS = 5 V + 250-mV sine disturbance

VCM = 0 V
0 VCM = 0V 20 VDIF = Shorted
VDIF = 15mVPP Sine VREF = 2.5 V
-10 0
10 100 1k 10k 100k 1M 10M 1 10 100 1k 10k 100k
Frequency (Hz) Frequency (Hz)
Figure 6-3. Gain vs Frequency Figure 6-4. Power-Supply Rejection Ratio vs Frequency
160 V+
(V+) - 0.5
140 (V+) - 1.0 VS = 5V to 26V
Output Voltage Swing (V)

(V+) - 1.5
120
(V+) - 2.0 VS = 2.7V
(V+) - 2.5
|CMRR| (dB)

100 to 26V VS = 2.7V

(V+) - 3.0
80
GND + 3.0
60 GND + 2.5
VS = +5V GND + 2.0
40
VCM = 1V Sine GND + 1.5 TA = -40°C
VDIF = Shorted GND + 1.0 VS = 2.7V to 26V TA = +25°C
20
VREF = 2.5V GND + 0.5 TA = +105°C
0 GND
1 10 100 1k 10k 100k 1M 0 5 10 15 20 25 30 35 40
Frequency (Hz) Output Current (mA)
Figure 6-5. Common-Mode Rejection Ratio vs Frequency Figure 6-6. Output Voltage Swing vs Output Current

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6.6 Typical Characteristics (continued)

performance measured with the INA199A3 at TA = 25°C, VS = 5 V, VIN+ = 12 V, and VREF = VS / 2 (unless otherwise noted)

V+ 50
(V+) - 0.25
+25°C
(V+) - 0.50 40
-20°C
(V+) - 0.75 IB+, IB-, VREF = 0V

Input Bias Current (mA)

+85°C
(V+) - 1.00
Output Voltage (V)

(V+) - 1.25 30
(V+) - 1.50
20
GND + 1.50 IB+, IB-, VREF = 2.5V
GND + 1.25 10
+85°C
GND + 1.00
+25°C
GND + 0.75
GND + 0.50 0
-20°C
GND + 0.25
GND -10
0 2 4 5 8 10 12 14 16 18 0 5 10 15 20 25 30
Output Current (mA) Common-Mode Voltage (V)

VS = 2.5 V Figure 6-8. Input Bias Current vs Common-Mode Voltage With

Supply Voltage = 5 V
Figure 6-7. Output Voltage Swing vs Output Current
30 30

25
IB+, IB-, VREF = 0V 29
Input Bias Current (mA)

Input Bias Current (mA)

20 and
IB-, VREF = 2.5V
15 28

10
27
5
IB+, VREF = 2.5V 26
0

-5 25
0 5 10 15 20 25 30 -50 -25 0 25 50 75 100 125
Common-Mode Voltage (V) Temperature (°C)
Figure 6-9. Input Bias Current vs Common-Mode Voltage With Figure 6-10. Input Bias Current vs Temperature
Supply Voltage = 0 V (Shutdown)
70 100
Input-Referred Voltage Noise (nV/ÖHz)

G = 50

68
Quiescent Current (mA)

66 G = 100 G = 200
10

64

VS = ±2.5V
62
VREF = 0V
VIN-, VIN+ = 0V
60 1
-50 -25 0 25 50 75 100 125 10 100 1k 10k 100k
Temperature (°C) Frequency (Hz)
Figure 6-11. Quiescent Current vs Temperature Figure 6-12. Input-Referred Voltage Noise vs Frequency

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6.6 Typical Characteristics (continued)

performance measured with the INA199A3 at TA = 25°C, VS = 5 V, VIN+ = 12 V, and VREF = VS / 2 (unless otherwise noted)

Output Voltage
2VPP Output Signal

(0.5V/diV)
Voltage Noise (200nV/div)
Referred-to-Input

10mVPP Input Signal

Input Voltage
VS = ±2.5V

(5mV/diV)
VCM = 0V
VDIF = 0V
VREF = 0V

Time (1s/div) Time (100ms/div)

Figure 6-13. 0.1-Hz to 10-Hz Voltage Noise (Referred-to-Input) Figure 6-14. Step Response (10-mVPP Input Step)

Inverting Input Overload

Common-Mode Voltage (1V/div)

Common Voltage Step

Output Voltage (40mV/div)

2V/div
0V
Output

Output Voltage
0V
0V
VS = 5V, VCM = 12V, VREF = 2.5V

Time (50ms/div) Time (250ms/div)

Figure 6-15. Common-Mode Voltage Transient Response Figure 6-16. Inverting Differential Input Overload

Noninverting Input Overload Supply Voltage

2V/div

1V/div

Output
Output Voltage

0V 0V
VS = 5V, VCM = 12V, VREF = 2.5V VS = 5V, 1kHz Step with VDIFF = 0V, VREF = 2.5V

Time (250ms/div) Time (100ms/div)

Figure 6-17. Noninverting Differential Input Overload Figure 6-18. Start-Up Response

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6.6 Typical Characteristics (continued)

performance measured with the INA199A3 at TA = 25°C, VS = 5 V, VIN+ = 12 V, and VREF = VS / 2 (unless otherwise noted)

Supply Voltage

1V/div
Output Voltage

VS = 5V, 1kHz Step with VDIFF = 0V, VREF = 2.5V

0V
Time (100ms/div)
Figure 6-19. Brownout Recovery

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7 Detailed Description
7.1 Overview
The INA199 is a 26-V common mode, zero-drift topology, current-sensing amplifier that can be used in both
low-side and high-side configurations. The device is a specially-designed, current-sensing amplifier that is able
to accurately measure voltages developed across a current-sensing resistor on common-mode voltages that far
exceed the supply voltage powering the device. Current can be measured on input voltage rails as high as 26 V
and the device can be powered from supply voltages as low as 2.7 V.
The zero-drift topology enables high-precision measurements with maximum input offset voltages as low as
150 µV with a maximum temperature contribution of 0.5 µV/°C over the full temperature range of –40°C to
+125°C.
7.2 Functional Block Diagram
V+

IN- -

OUT

IN+ +

REF

GND

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7.3 Feature Description

7.3.1 Basic Connections
Figure 7-1 shows the basic connections for the INA199. The input pins, IN+ and IN–, must be connected as
close as possible to the shunt resistor to minimize any resistance in series with the shunt resistor.
RSHUNT

Power Supply Load

5-V Supply

CBYPASS
0.1 µF
V+

IN-

-
OUT
ADC Microcontroller
+

IN+ REF

GND

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Figure 7-1. Typical Application

Power-supply bypass capacitors are required for stability. Applications with noisy or high-impedance power
supplies may require additional decoupling capacitors to reject power-supply noise. Connect bypass capacitors
close to the device pins.
On the RSW package, two pins are provided for each input. These pins must be tied together (that is, tie IN+ to
IN+ and tie IN– to IN–).
7.3.2 Selecting RS
The zero-drift offset performance of the INA199 offers several benefits. Most often, the primary advantage of
the low offset characteristic enables lower full-scale drops across the shunt. For example, non-zero-drift current
shunt monitors typically require a full-scale range of 100 mV.
The INA199 series gives equivalent accuracy at a full-scale range on the order of 10 mV. This accuracy reduces
shunt dissipation by an order of magnitude with many additional benefits.
Alternatively, there are applications that must measure current over a wide dynamic range that can take
advantage of the low offset on the low end of the measurement. Most often, these applications can use the
lower gain of 50 or 100 to accommodate larger shunt drops on the upper end of the scale. For instance, an
INA199A1 operating on a 3.3-V supply can easily handle a full-scale shunt drop of 60 mV, with only 150 μV of
offset.

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7.4 Device Functional Modes

7.4.1 Input Filtering
An obvious and straightforward filtering location is at the device output. However, this location negates the
advantage of the low output impedance of the internal buffer. The only other filtering option is at the device input
pins. This location, though, does require consideration of the ±30% tolerance of the internal resistances. Figure
7-2 shows a filter placed at the inputs pins.
RSHUNT
Bus Supply Load Power Supply

CBYPASS
V+
0.1µF
RINT
IN-

RS < 10 Ÿ
- OUT Output
CF Bias

RINT
+
IN+ REF
RS < 10 Ÿ
GND

Figure 7-2. Filter at Input Pins

The addition of external series resistance, however, creates an additional error in the measurement so the value
of these series resistors must be kept to 10 Ω (or less if possible) to reduce any affect to accuracy. The internal
bias network shown in Figure 7-2 present at the input pins creates a mismatch in input bias currents when a
differential voltage is applied between the input pins. If additional external series filter resistors are added to
the circuit, the mismatch in bias currents results in a mismatch of voltage drops across the filter resistors. This
mismatch creates a differential error voltage that subtracts from the voltage developed at the shunt resistor. This
error results in a voltage at the device input pins that is different than the voltage developed across the shunt
resistor. Without the additional series resistance, the mismatch in input bias currents has little effect on device
operation. The amount of error these external filter resistor add to the measurement can be calculated using
Equation 2 where the gain error factor is calculated using Equation 1.
The amount of variance in the differential voltage present at the device input relative to the voltage developed
at the shunt resistor is based both on the external series resistance value as well as the internal input resistors,
R3 and R4 (or RINT as shown in Figure 7-2). The reduction of the shunt voltage reaching the device input pins
appears as a gain error when comparing the output voltage relative to the voltage across the shunt resistor.
A factor can be calculated to determine the amount of gain error that is introduced by the addition of external
series resistance. The equation used to calculate the expected deviation from the shunt voltage to what is seen
at the device input pins is given in Equation 1:

(1250 ´ RINT)
Gain Error Factor =
(1250 ´ RS) + (1250 ´ RINT) + (RS ´ RINT) (1)

where:
• RINT is the internal input resistor (R3 and R4).
• RS is the external series resistance.

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With the adjustment factor equation including the device internal input resistance, this factor varies with each
gain version, as listed in Table 7-1. Each individual device gain error factor is listed in Table 7-2.
Table 7-1. Input Resistance
PRODUCT GAIN RINT (kΩ)
INA199x1 50 20
INA199x2 100 10
INA199x3 200 5

Table 7-2. Device Gain Error Factor

PRODUCT SIMPLIFIED GAIN ERROR FACTOR
20,000
INA199x1
(17 ´ RS) + 20,000

10,000
INA199x2
(9 ´ RS) + 10,000

1000
INA199x3 RS + 1000

The gain error that can be expected from the addition of the external series resistors can then be calculated
based on Equation 2:

Gain Error (%) = 100 - (100 ´ Gain Error Factor) (2)

For example, using an INA199x2 and the corresponding gain error equation from Table 7-2, a series resistance
of 10-Ω results in a gain error factor of 0.991. The corresponding gain error is then calculated using Equation 2,
resulting in a gain error of approximately 0.89% solely because of the external 10-Ω series resistors. Using an
INA199x1 with the same 10-Ω series resistor results in a gain error factor of 0.991 and a gain error of 0.84%
again solely because of these external resistors.
7.4.2 Shutting Down the INA199 Series
Although the INA199 series does not have a shutdown pin, the low power consumption of the device allows the
output of a logic gate or transistor switch to power the INA199. This gate or switch turns on and turns off the
INA199 power-supply quiescent current.
However, in current shunt monitoring applications, there is also a concern for how much current is drained
from the shunt circuit in shutdown conditions. Evaluating this current drain involves considering the simplified
schematic of the INA199 in shutdown mode shown in Figure 7-3.
RSHUNT
Supply Load
Reference
Voltage

REF OUT Output

GND 1 MW R3 IN-

Shutdown V+ IN+ PRODUCT R3 AND R4

Control
1 MW R4 INA199x1 20 kW
INA199x2 10 kW
CBYPASS INA199x3 5 kW
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1-MΩ paths from shunt inputs to reference and the INA199 outputs.

Figure 7-3. Basic Circuit for Shutting Down the INA199 With a Grounded Reference

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There is typically slightly more than 1-MΩ impedance (from the combination of 1-MΩ feedback and 5-kΩ input
resistors) from each input of the INA199 to the OUT pin and to the REF pin. The amount of current flowing
through these pins depends on the respective ultimate connection. For example, if the REF pin is grounded,
the calculation of the effect of the 1-MΩ impedance from the shunt to ground is straightforward. However, if the
reference or operational amplifier is powered when the INA199 is shut down, the calculation is direct; instead
of assuming 1-MΩ to ground, however, assume 1-MΩ to the reference voltage. If the reference or operational
amplifier is also shut down, some knowledge of the reference or operational amplifier output impedance under
shutdown conditions is required. For instance, if the reference source functions as an open circuit when not
powered, little or no current flows through the 1-MΩ path.
Regarding the 1-MΩ path to the output pin, the output stage of a disabled INA199 does constitute a good path to
ground. Consequently, this current is directly proportional to a shunt common-mode voltage impressed across a
1-MΩ resistor.

Note
When the device is powered up, there is an additional, nearly constant, and well-matched 25 μA that
flows in each of the inputs as long as the shunt common-mode voltage is 3 V or higher. Below 2-V
common-mode, the only current effects are the result of the 1-MΩ resistors.

7.4.3 REF Input Impedance Effects

As with any difference amplifier, the INA199 series common-mode rejection ratio is affected by any impedance
present at the REF input. This concern is not a problem when the REF pin is connected directly to most
references or power supplies. When using resistive dividers from the power supply or a reference voltage, the
REF pin must be buffered by an operational amplifier.
In systems where the INA199 output can be sensed differentially, such as by a differential input analog-to-digital
converter (ADC) or by using two separate ADC inputs, the effects of external impedance on the REF input can
be cancelled. Figure 7-4 depicts a method of taking the output from the INA199 by using the REF pin as a
reference.
RSHUNT Load
Supply

ADC
REF OUT Output

GND R1 R3 IN-

2.7 V to 26 V IN+
V+
R2 R4
CBYPASS
0.01 mF
to
0.1 mF

Figure 7-4. Sensing the INA199 to Cancel Effects of Impedance on the REF Input

7.4.4 Using the INA199 With Common-Mode Transients Above 26 V

With a small amount of additional circuitry, the INA199 series can be used in circuits subject to transients higher
than 26 V, such as automotive applications. Use only Zener diode or Zener-type transient absorbers (sometimes
referred to as transzorbs); any other type of transient absorber has an unacceptable time delay. Start by adding
a pair of resistors (see Figure 7-5) as a working impedance for the Zener. Keeping these resistors as small
as possible is preferable, most often approximately 10 Ω. Larger values can be used with an effect on gain as
discussed in the Section 7.4.1 section. Because this circuit limits only short-term transients, many applications

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are satisfied with a 10-Ω resistor along with conventional Zener diodes of the lowest power rating that can be
found. This combination uses the least amount of board space. These diodes can be found in packages as
small as SOT-523 or SOD-523. See TIDA-00302 Transient Robustness for Current Shunt Monitor Design Guide,
TIDU473 for more information on transient robustness and current-shunt monitor input protection.
RSHUNT
Supply Load

RPROTECT RPROTECT
10 W 10 W

Reference
Voltage

Output
REF OUT

GND 1 MW R3 IN-

Shutdown V+ IN+
Control 1 MW R4

CBYPASS

Figure 7-5. INA199 Transient Protection Using Dual Zener Diodes

In the event that low-power zeners do not have sufficient transient absorption capability and a higher power
transzorb must be used, the most package-efficient solution then involves using a single transzorb and back-to-
back diodes between the device inputs. The most space-efficient solutions are dual series-connected diodes in a
single SOT-523 or SOD-523 package. This method is shown in Figure 7-6. In either of these examples, the total
board area required by the INA199 with all protective components is less than that of an SO-8 package, and only
slightly greater than that of an MSOP-8 package.
RSHUNT
Supply Load

RPROTECT RPROTECT
10 W 10 W

Reference
Voltage

Output
REF OUT

GND 1 MW R3 IN-

Shutdown V+ IN+
Control 1 MW R4

CBYPASS

Figure 7-6. INA199 Transient Protection Using a Single Transzorb and Input Clamps

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7.4.5 Improving Transient Robustness

Applications involving large input transients with excessive dV/dt above 2 kV per microsecond present at the
device input pins can cause damage to the internal ESD structures on version A devices. This potential damage
is a result of the internal latching of the ESD structure to ground when this transient occurs at the input. With
significant current available in most current-sensing applications, the large current flowing through the input
transient-triggered, ground-shorted ESD structure quickly results in damage to the silicon. External filtering can
be used to attenuate the transient signal prior to reaching the inputs to avoid the latching condition. Take care
to ensure that external series input resistance does not significantly affect gain error accuracy. For accuracy
purposes, keep the resistance under 10 Ω if possible. Ferrite beads are recommended for this filter because
of their inherently low dc ohmic value. Ferrite beads with less than 10 Ω of resistance at dc and over 600
Ω of resistance at 100 MHz to 200 MHz are recommended. The recommended capacitor values for this filter
are between 0.01 µF and 0.1 µF to ensure adequate attenuation in the high-frequency region. This protection
scheme is shown in Figure 7-7. Again, see TIDA-00302 Transient Robustness for Current Shunt Monitor Design
Guide, TIDU473 for more information on transient robustness and current-shunt monitor input protection.
Shunt
Reference
Load Supply
Voltage
Device
REF OUT
Output

1 MW R3 IN-
GND
-
MMZ1608B601C
+

V+ IN+
2.7 V to 26 V
1 MW R4
0.01mF 0.01mF
to 0.1mF to 0.1mF

Copyright © 2017, Texas Instruments Incorporated

Figure 7-7. Transient Protection

To minimize the cost of adding these external components to protect the device in applications where large
transient signals may be present, version B and C devices are now available with new ESD structures that
are not susceptible to this latching condition. Version B and C devices are incapable of sustaining these
damage-causing latched conditions so these devices do not have the same sensitivity to the transients that the
version A devices have, thus making the version B and C devices a better fit for these applications.

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8 Application and Implementation

Note
Information in the following applications sections is not part of the TI component specification,
and TI does not warrant its accuracy or completeness. TI’s customers are responsible for
determining suitability of components for their purposes, as well as validating and testing their design
implementation to confirm system functionality.

8.1 Application Information

The INA199 measures the voltage developed across a current-sensing resistor when current passes through it.
The ability to drive the reference pin to adjust the functionality of the output signal offers multiple configurations,
as discussed throughout this section.
8.2 Typical Applications
8.2.1 Unidirectional Operation
Bus Supply Load Power Supply

CBYPASS
V+
0.1 µF

IN-

-
OUT Output

IN+ REF

GND

Copyright © 2017, Texas Instruments Incorporated

Figure 8-1. Unidirectional Application Schematic

8.2.1.1 Design Requirements

The device can be configured to monitor current flowing in one direction (unidirectional) or in both directions
(bidirectional) depending on how the REF pin is configured. The most common case is unidirectional where the
output is set to ground when no current is flowing by connecting the REF pin to ground, as shown in Figure 8-1.
When the input signal increases, the output voltage at the OUT pin increases.
8.2.1.2 Detailed Design Procedure
The linear range of the output stage is limited in how close the output voltage can approach ground under
zero input conditions. In unidirectional applications where measuring very low input currents is desirable, bias
the REF pin to a convenient value above 50 mV to get the output into the linear range of the device. To limit
common-mode rejection errors, TI recommends buffering the reference voltage connected to the REF pin.
A less frequently-used output biasing method is to connect the REF pin to the supply voltage, V+. This method
results in the output voltage saturating at 200 mV below the supply voltage when no differential input signal is
present. This method is similar to the output saturated low condition with no input signal when the REF pin is
connected to ground. The output voltage in this configuration only responds to negative currents that develop
negative differential input voltage relative to the device IN– pin. Under these conditions, when the differential

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input signal increases negatively, the output voltage moves downward from the saturated supply voltage. The
voltage applied to the REF pin must not exceed the device supply voltage.
8.2.1.3 Application Curve
An example output response of a unidirectional configuration is shown in Figure 8-2. With the REF pin
connected directly to ground, the output voltage is biased to this zero output level. The output rises above
the reference voltage for positive differential input signals but cannot fall below the reference voltage for negative
differential input signals because of the grounded reference voltage.

Output Voltage
(1 V/div)

0V

Output
VREF
Time (500 µs /div)

C001

Figure 8-2. Unidirectional Application Output Response

8.2.2 Bidirectional Operation

Bus Supply Load Power Supply

CBYPASS
V+
0.1 µF

IN-

Reference
Voltage
-
OUT Output

IN+ REF
+

-
-

GND

Copyright © 2017, Texas Instruments Incorporated

Figure 8-3. Bidirectional Application Schematic

8.2.2.1 Design Requirements

The device is a bidirectional, current-sense amplifier capable of measuring currents through a resistive shunt
in two directions. This bidirectional monitoring is common in applications that include charging and discharging
operations where the current flow-through resistor can change directions.
8.2.2.2 Detailed Design Procedure
The ability to measure this current flowing in both directions is enabled by applying a voltage to the REF pin;
see Figure 8-3. The voltage applied to REF (VREF) sets the output state that corresponds to the zero-input level

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state. The output then responds by increasing above VREF for positive differential signals (relative to the IN– pin)
and responds by decreasing below VREF for negative differential signals. This reference voltage applied to the
REF pin can be set anywhere between 0 V to V+. For bidirectional applications, VREF is typically set at mid-scale
for equal signal range in both current directions. In some cases, however, VREF is set at a voltage other than
mid-scale when the bidirectional current and corresponding output signal do not need to be symmetrical.
8.2.2.3 Application Curve

Output Voltage
(1 V/div)

VOUT
0V VREF
Time (500 µs/div)

C002

Figure 8-4. Bidirectional Application Output Response

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9 Power Supply Recommendations

The input circuitry of the INA199 can accurately measure beyond its power-supply voltage, V+. For example,
the V+ power supply can be 5 V, whereas the load power-supply voltage can be as high as 26 V. However, the
output voltage range of the OUT pin is limited by the voltages on the power-supply pin. Also, the INA199 can
withstand the full input signal range up to 26-V range in the input pins, regardless of whether the device has
power applied or not.
10 Layout
10.1 Layout Guidelines
• Connect the input pins to the sensing resistor using a kelvin or 4-wire connection. This connection technique
ensures that only the current-sensing resistor impedance is detected between the input pins. Poor routing of
the current-sensing resistor commonly results in additional resistance present between the input pins. Given
the very low ohmic value of the current resistor, any additional high-current carrying impedance can cause
significant measurement errors.
• Place the power-supply bypass capacitor as close as possible to the supply and ground pins. TI recommends
using a bypass capacitor with a value of 0.1 μF. Additional decoupling capacitance can be added to
compensate for noisy or high-impedance power supplies.
10.2 Layout Example

Output Signal
Trace
VIA to Power or
Ground Plane

VIA to Ground Plane

IN-

IN+
OUT

GND
REF

V+

Supply
Voltage

Supply Bypass
Capacitor

Copyright © 2017, Texas Instruments Incorporated

Figure 10-1. Recommended Layout

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11 Device and Documentation Support

11.1 Documentation Support
11.1.1 Related Documentation
For related documentation see the following:
• INA199A1-A3EVM User's Guide
• TIDA-00302 Transient Robustness for Current Shunt Monitor
11.2 Receiving Notification of Documentation Updates
To receive notification of documentation updates, navigate to the device product folder on ti.com. Click on
Notifications to register and receive a weekly digest of any product information that has changed. For change
details, review the revision history included in any revised document.
11.3 Support Resources
TI E2E™ support forums are an engineer's go-to source for fast, verified answers and design help — straight
from the experts. Search existing answers or ask your own question to get the quick design help you need.
Linked content is provided "AS IS" by the respective contributors. They do not constitute TI specifications and do
not necessarily reflect TI's views; see TI's Terms of Use.
11.4 Trademarks
TI E2E™ is a trademark of Texas Instruments.
All trademarks are the property of their respective owners.
11.5 Electrostatic Discharge Caution
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled
with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may
be more susceptible to damage because very small parametric changes could cause the device not to meet its published
specifications.

11.6 Glossary
TI Glossary This glossary lists and explains terms, acronyms, and definitions.

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12 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.

Changes from Revision G (Februay 2017) to Revision H (October 2023) Page

• Updated the numbering format for tables, figures, and cross-references throughout the document................. 1

Changes from Revision F (June 2016) to Revision G (February 2017) Page

• Changed first sub-bullet of Accuracy Features bullet: deleted ±1.5% from sub-bullet and added
version differences .............................................................................................................................................1
• Changed 105°C to 125°C in last paragraph of Description section ...................................................................1
• Added INA199Cx to last row of Analog inputs in Absolute Maximum Ratings table.......................................... 4
• Changed INA199Ax HBM value from ±4000 to ±2000 and changed INA199B1, INA199B2, and INA199B3 to
INA199Bx and INA199Cx in second V(ESD) section of ESD Ratings table......................................................... 4
• Changed maximum specification from 105 to 125 in TA row of Recommended Operating Conditions table.....5
• Changed all TA = –40°C to 105°C to TA = –40°C to 125°C in Electrical Characteristics table........................... 6
• Added version C to last row of VCM parameter in Electrical Characteristics table ............................................ 6
• Added versions A and B to first Gain error parameter row, added second row ................................................ 6
• Changed devices listed in test conditions of GBW parameter in Electrical Characteristics table to INA199x1,
INA199x2, and INA199x3, respectively for the three rows................................................................................. 6
• Changed maximum specification from 105 to 125 in Specified range parameter of Electrical Characteristics
table.................................................................................................................................................................... 6
• Changed 105°C to 125°C in last paragraph of Overview section..................................................................... 11
• Changed INA199A2 and INA199B2 to INA199x2 and changed INA199A2 and INA199B2 to INA199x2 in last
paragraph of Input Filtering section.................................................................................................................. 13
• Changed listed products in table of Figure 22 .................................................................................................14
• Changed version B to version B and C in second paragraph of Improving Transient Robustness section......17

Changes from Revision E (December 2015) to Revision F (June 2016) Page

• Changed Package Features bullet to include pin count for both packages ...................................................... 1
• Deleted last Applications bullet...........................................................................................................................1
• Changed Description section..............................................................................................................................1
• Changed Analog inputs parameter in Absolute Maximum Ratings table........................................................... 4
• Changed ESD Ratings table: deleted both Machine model rows, changed INA199B HBM specification..........4
• Changed Electrical Characteristics table: recombined the two Electrical Characteristics tables into one .........6
• Added minimum specification to second row of Power Supply, VS parameter in Electrical Characteristics
table ...................................................................................................................................................................6
• Added θJA parameter back to Electrical Characteristics table ...........................................................................6

Changes from Revision D (November 2012) to Revision E (December 2015) Page

• Added ESD Ratings table, Thermal Information table, Feature Description section, Device Functional Modes,
Application and Implementation section, Power Supply Recommendations section, Layout section, Device
and Documentation Support section, and Mechanical, Packaging, and Orderable Information section ........... 1

Changes from Revision C (August 2012) to Revision D (November 2012) Page

• Changed Frequency Response, Bandwidth parameter in Electrical Characteristics table.................................6
• Updated Figure 7-2 ..........................................................................................................................................13
• Updated Figure 7-3 ..........................................................................................................................................14

Changes from Revision B (February 2010) to Revision C (August 2012) Page

• Added INA199Bx gains to fourth Features bullet............................................................................................... 1
• Added INA199Bx data to Product Family Table................................................................................................. 3
• Added INA199Bx data to Package Information table......................................................................................... 3

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• Added silicon version B data to Input, Common-Mode Input Range parameter of Electrical
Characteristics table........................................................................................................................................... 6
• Added QFN package information to Temperature Range section of Electrical Characteristics table.................6
• Updated Figure 6-3 ............................................................................................................................................7
• Updated Figure 6-9 ............................................................................................................................................7
• Updated Figure 6-12 ..........................................................................................................................................7
• Changed last paragraph of the Selecting RS section to cover both INA199Ax and INA199Bx versions..........12
• Changed Input Filtering section........................................................................................................................13
• Added Improving Transient Robustness section.............................................................................................. 17

Changes from Revision A (June 2009) to Revision B (February 2010) Page

• Deleted ordering information content from Package/Ordering table.................................................................. 3
• Updated DCK pinout drawing............................................................................................................................. 3

Changes from Revision * (April 2009) to Revision A (June 2009) Page

• Added ordering number and transport media, quantity columns to Package/Ordering Information table.......... 3

13 Mechanical, Packaging, and Orderable Information

The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.

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 PACKAGE OPTION ADDENDUM

www.ti.com 20-Aug-2024

PACKAGING INFORMATION

Orderable Device Status Package Type Package Pins Package Eco Plan Lead finish/ MSL Peak Temp Op Temp (°C) Device Marking Samples
(1) Drawing Qty (2) Ball material (3) (4/5)
(6)

INA199A1DCKR ACTIVE SC70 DCK 6 3000 RoHS & Green NIPDAU | SN Level-2-260C-1 YEAR -40 to 125 OBG Samples

INA199A1DCKT ACTIVE SC70 DCK 6 250 RoHS & Green NIPDAU | SN Level-2-260C-1 YEAR -40 to 125 OBG Samples

INA199A1RSWR ACTIVE UQFN RSW 10 3000 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 125 NSJ Samples

INA199A1RSWT ACTIVE UQFN RSW 10 250 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 125 NSJ Samples

INA199A2DCKR ACTIVE SC70 DCK 6 3000 RoHS & Green NIPDAU | SN Level-2-260C-1 YEAR -40 to 125 OBH Samples

INA199A2DCKT ACTIVE SC70 DCK 6 250 RoHS & Green NIPDAU | SN Level-2-260C-1 YEAR -40 to 125 OBH Samples

INA199A2RSWR ACTIVE UQFN RSW 10 3000 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 125 NTJ Samples

INA199A2RSWT OBSOLETE UQFN RSW 10 TBD Call TI Call TI -40 to 125 NTJ
INA199A3DCKR ACTIVE SC70 DCK 6 3000 RoHS & Green NIPDAU | SN Level-2-260C-1 YEAR -40 to 125 OBI Samples

INA199A3DCKT ACTIVE SC70 DCK 6 250 RoHS & Green NIPDAU | SN Level-2-260C-1 YEAR -40 to 125 OBI Samples

INA199A3RSWR ACTIVE UQFN RSW 10 3000 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 125 NUJ Samples

INA199B1DCKR ACTIVE SC70 DCK 6 3000 RoHS & Green NIPDAU | SN Level-2-260C-1 YEAR -40 to 125 SEB Samples

INA199B1DCKT ACTIVE SC70 DCK 6 250 RoHS & Green NIPDAU | SN Level-2-260C-1 YEAR -40 to 125 SEB Samples

INA199B1RSWR ACTIVE UQFN RSW 10 3000 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 125 SHV Samples

INA199B1RSWT OBSOLETE UQFN RSW 10 TBD Call TI Call TI -40 to 125 SHV
INA199B2DCKR ACTIVE SC70 DCK 6 3000 RoHS & Green NIPDAU | SN Level-2-260C-1 YEAR -40 to 125 SEG Samples

INA199B2DCKT ACTIVE SC70 DCK 6 250 RoHS & Green NIPDAU | SN Level-2-260C-1 YEAR -40 to 125 SEG Samples

INA199B2RSWR ACTIVE UQFN RSW 10 3000 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 125 SHW Samples

INA199B3DCKR ACTIVE SC70 DCK 6 3000 RoHS & Green NIPDAU | SN Level-2-260C-1 YEAR -40 to 125 SHE Samples

INA199B3DCKT ACTIVE SC70 DCK 6 250 RoHS & Green NIPDAU | SN Level-2-260C-1 YEAR -40 to 125 SHE Samples

Addendum-Page 1
 PACKAGE OPTION ADDENDUM

www.ti.com 20-Aug-2024

Orderable Device Status Package Type Package Pins Package Eco Plan Lead finish/ MSL Peak Temp Op Temp (°C) Device Marking Samples
(1) Drawing Qty (2) Ball material (3) (4/5)
(6)

INA199B3RSWR ACTIVE UQFN RSW 10 3000 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 125 SHX Samples

INA199C1DCKR ACTIVE SC70 DCK 6 3000 RoHS & Green NIPDAU | SN Level-2-260C-1 YEAR -40 to 125 16L Samples

INA199C1DCKT OBSOLETE SC70 DCK 6 TBD Call TI Call TI -40 to 125 16L
INA199C1RSWR ACTIVE UQFN RSW 10 3000 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 125 (160, 16O) Samples

INA199C1RSWT OBSOLETE UQFN RSW 10 TBD Call TI Call TI -40 to 125 (160, 16O)
INA199C2DCKR ACTIVE SC70 DCK 6 3000 RoHS & Green NIPDAU | SN Level-2-260C-1 YEAR -40 to 125 16M Samples

INA199C2DCKT OBSOLETE SC70 DCK 6 TBD Call TI Call TI -40 to 125 16M
INA199C2RSWR ACTIVE UQFN RSW 10 3000 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 125 16P Samples

INA199C2RSWT OBSOLETE UQFN RSW 10 TBD Call TI Call TI -40 to 125 16P
INA199C3DCKR ACTIVE SC70 DCK 6 3000 RoHS & Green NIPDAU | SN Level-2-260C-1 YEAR -40 to 125 16N Samples

INA199C3DCKT ACTIVE SC70 DCK 6 250 RoHS & Green NIPDAU | SN Level-2-260C-1 YEAR -40 to 125 16N Samples

INA199C3RSWR ACTIVE UQFN RSW 10 3000 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 125 16Q Samples

INA199C3RSWT OBSOLETE UQFN RSW 10 TBD Call TI Call TI -40 to 125 16Q

(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.

(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based
flame retardants must also meet the <=1000ppm threshold requirement.

(3)
MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.

Addendum-Page 2
 PACKAGE OPTION ADDENDUM

www.ti.com 20-Aug-2024

(4)
There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.

(5)
Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.

(6)
Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two
lines if the finish value exceeds the maximum column width.

Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.

In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.

OTHER QUALIFIED VERSIONS OF INA199 :

• Automotive : INA199-Q1

NOTE: Qualified Version Definitions:

• Automotive - Q100 devices qualified for high-reliability automotive applications targeting zero defects

Addendum-Page 3
 PACKAGE MATERIALS INFORMATION

www.ti.com 25-Sep-2024

TAPE AND REEL INFORMATION

REEL DIMENSIONS TAPE DIMENSIONS

K0 P1

B0 W
Reel
Diameter
Cavity A0
A0 Dimension designed to accommodate the component width
B0 Dimension designed to accommodate the component length
K0 Dimension designed to accommodate the component thickness
W Overall width of the carrier tape
P1 Pitch between successive cavity centers

Reel Width (W1)

QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE

Sprocket Holes

Q1 Q2 Q1 Q2

Q3 Q4 Q3 Q4 User Direction of Feed

Pocket Quadrants

*All dimensions are nominal

Device Package Package Pins SPQ Reel Reel A0 B0 K0 P1 W Pin1
Type Drawing Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant
(mm) W1 (mm)
INA199A1DCKR SC70 DCK 6 3000 178.0 9.0 2.4 2.5 1.2 4.0 8.0 Q3
INA199A1DCKR SC70 DCK 6 3000 178.0 9.0 2.4 2.5 1.2 4.0 8.0 Q3
INA199A1DCKT SC70 DCK 6 250 178.0 9.0 2.4 2.5 1.2 4.0 8.0 Q3
INA199A1DCKT SC70 DCK 6 250 178.0 9.0 2.4 2.5 1.2 4.0 8.0 Q3
INA199A1DCKT SC70 DCK 6 250 179.0 8.4 2.2 2.5 1.2 4.0 8.0 Q3
INA199A1RSWR UQFN RSW 10 3000 179.0 8.4 1.7 2.1 0.7 4.0 8.0 Q1
INA199A1RSWT UQFN RSW 10 250 180.0 8.4 1.7 2.1 0.7 4.0 8.0 Q1
INA199A2DCKR SC70 DCK 6 3000 178.0 9.0 2.4 2.5 1.2 4.0 8.0 Q3
INA199A2DCKR SC70 DCK 6 3000 178.0 9.0 2.4 2.5 1.2 4.0 8.0 Q3
INA199A2DCKR SC70 DCK 6 3000 179.0 8.4 2.2 2.5 1.2 4.0 8.0 Q3
INA199A2DCKR SC70 DCK 6 3000 180.0 8.4 2.47 2.3 1.25 4.0 8.0 Q3
INA199A2DCKT SC70 DCK 6 250 180.0 8.4 2.47 2.3 1.25 4.0 8.0 Q3
INA199A2DCKT SC70 DCK 6 250 178.0 9.0 2.4 2.5 1.2 4.0 8.0 Q3
INA199A2DCKT SC70 DCK 6 250 179.0 8.4 2.2 2.5 1.2 4.0 8.0 Q3
INA199A2DCKT SC70 DCK 6 250 178.0 9.0 2.4 2.5 1.2 4.0 8.0 Q3
INA199A2RSWR UQFN RSW 10 3000 180.0 8.4 1.7 2.1 0.7 4.0 8.0 Q1

Pack Materials-Page 1
 PACKAGE MATERIALS INFORMATION

www.ti.com 25-Sep-2024

Device Package Package Pins SPQ Reel Reel A0 B0 K0 P1 W Pin1

Type Drawing Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant
(mm) W1 (mm)
INA199A3DCKR SC70 DCK 6 3000 178.0 9.0 2.4 2.5 1.2 4.0 8.0 Q3
INA199A3DCKR SC70 DCK 6 3000 178.0 9.0 2.4 2.5 1.2 4.0 8.0 Q3
INA199A3DCKT SC70 DCK 6 250 178.0 9.0 2.4 2.5 1.2 4.0 8.0 Q3
INA199A3DCKT SC70 DCK 6 250 178.0 9.0 2.4 2.5 1.2 4.0 8.0 Q3
INA199A3RSWR UQFN RSW 10 3000 180.0 8.4 1.7 2.1 0.7 4.0 8.0 Q1
INA199B1DCKR SC70 DCK 6 3000 178.0 9.0 2.4 2.5 1.2 4.0 8.0 Q3
INA199B1DCKT SC70 DCK 6 250 178.0 9.0 2.4 2.5 1.2 4.0 8.0 Q3
INA199B1DCKT SC70 DCK 6 250 178.0 9.0 2.4 2.5 1.2 4.0 8.0 Q3
INA199B1RSWR UQFN RSW 10 3000 179.0 8.4 1.7 2.1 0.7 4.0 8.0 Q1
INA199B2DCKR SC70 DCK 6 3000 178.0 9.0 2.4 2.5 1.2 4.0 8.0 Q3
INA199B2DCKR SC70 DCK 6 3000 178.0 9.0 2.4 2.5 1.2 4.0 8.0 Q3
INA199B2DCKT SC70 DCK 6 250 178.0 9.0 2.4 2.5 1.2 4.0 8.0 Q3
INA199B2DCKT SC70 DCK 6 250 178.0 9.0 2.4 2.5 1.2 4.0 8.0 Q3
INA199B2RSWR UQFN RSW 10 3000 180.0 8.4 1.7 2.1 0.7 4.0 8.0 Q1
INA199B3DCKR SC70 DCK 6 3000 178.0 9.0 2.4 2.5 1.2 4.0 8.0 Q3
INA199B3DCKR SC70 DCK 6 3000 178.0 9.0 2.4 2.5 1.2 4.0 8.0 Q3
INA199B3DCKT SC70 DCK 6 250 178.0 9.0 2.4 2.5 1.2 4.0 8.0 Q3
INA199B3DCKT SC70 DCK 6 250 178.0 9.0 2.4 2.5 1.2 4.0 8.0 Q3
INA199B3RSWR UQFN RSW 10 3000 179.0 8.4 1.7 2.1 0.7 4.0 8.0 Q1
INA199C1DCKR SC70 DCK 6 3000 178.0 9.0 2.4 2.5 1.2 4.0 8.0 Q3
INA199C1DCKR SC70 DCK 6 3000 178.0 9.0 2.4 2.5 1.2 4.0 8.0 Q3
INA199C1RSWR UQFN RSW 10 3000 180.0 8.4 1.7 2.1 0.7 4.0 8.0 Q1
INA199C2DCKR SC70 DCK 6 3000 178.0 9.0 2.4 2.5 1.2 4.0 8.0 Q3
INA199C2DCKR SC70 DCK 6 3000 178.0 9.0 2.4 2.5 1.2 4.0 8.0 Q3
INA199C2RSWR UQFN RSW 10 3000 180.0 8.4 1.7 2.1 0.7 4.0 8.0 Q1
INA199C3DCKR SC70 DCK 6 3000 178.0 9.0 2.4 2.5 1.2 4.0 8.0 Q3
INA199C3DCKR SC70 DCK 6 3000 178.0 9.0 2.4 2.5 1.2 4.0 8.0 Q3
INA199C3DCKT SC70 DCK 6 250 178.0 9.0 2.4 2.5 1.2 4.0 8.0 Q3
INA199C3DCKT SC70 DCK 6 250 178.0 8.4 2.4 2.5 1.2 4.0 8.0 Q3

Pack Materials-Page 2
 PACKAGE MATERIALS INFORMATION

www.ti.com 25-Sep-2024

TAPE AND REEL BOX DIMENSIONS

Width (mm)
H
W

*All dimensions are nominal

Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)
INA199A1DCKR SC70 DCK 6 3000 190.0 190.0 30.0
INA199A1DCKR SC70 DCK 6 3000 180.0 180.0 18.0
INA199A1DCKT SC70 DCK 6 250 190.0 190.0 30.0
INA199A1DCKT SC70 DCK 6 250 180.0 180.0 18.0
INA199A1DCKT SC70 DCK 6 250 213.0 191.0 35.0
INA199A1RSWR UQFN RSW 10 3000 200.0 183.0 25.0
INA199A1RSWT UQFN RSW 10 250 210.0 185.0 35.0
INA199A2DCKR SC70 DCK 6 3000 190.0 190.0 30.0
INA199A2DCKR SC70 DCK 6 3000 180.0 180.0 18.0
INA199A2DCKR SC70 DCK 6 3000 213.0 191.0 35.0
INA199A2DCKR SC70 DCK 6 3000 223.0 270.0 35.0
INA199A2DCKT SC70 DCK 6 250 223.0 270.0 35.0
INA199A2DCKT SC70 DCK 6 250 190.0 190.0 30.0
INA199A2DCKT SC70 DCK 6 250 213.0 191.0 35.0
INA199A2DCKT SC70 DCK 6 250 180.0 180.0 18.0
INA199A2RSWR UQFN RSW 10 3000 210.0 185.0 35.0
INA199A3DCKR SC70 DCK 6 3000 180.0 180.0 18.0
INA199A3DCKR SC70 DCK 6 3000 190.0 190.0 30.0

Pack Materials-Page 3
 PACKAGE MATERIALS INFORMATION

www.ti.com 25-Sep-2024

Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)
INA199A3DCKT SC70 DCK 6 250 180.0 180.0 18.0
INA199A3DCKT SC70 DCK 6 250 190.0 190.0 30.0
INA199A3RSWR UQFN RSW 10 3000 210.0 185.0 35.0
INA199B1DCKR SC70 DCK 6 3000 190.0 190.0 30.0
INA199B1DCKT SC70 DCK 6 250 180.0 180.0 18.0
INA199B1DCKT SC70 DCK 6 250 190.0 190.0 30.0
INA199B1RSWR UQFN RSW 10 3000 200.0 183.0 25.0
INA199B2DCKR SC70 DCK 6 3000 180.0 180.0 18.0
INA199B2DCKR SC70 DCK 6 3000 190.0 190.0 30.0
INA199B2DCKT SC70 DCK 6 250 180.0 180.0 18.0
INA199B2DCKT SC70 DCK 6 250 190.0 190.0 30.0
INA199B2RSWR UQFN RSW 10 3000 210.0 185.0 35.0
INA199B3DCKR SC70 DCK 6 3000 180.0 180.0 18.0
INA199B3DCKR SC70 DCK 6 3000 190.0 190.0 30.0
INA199B3DCKT SC70 DCK 6 250 180.0 180.0 18.0
INA199B3DCKT SC70 DCK 6 250 190.0 190.0 30.0
INA199B3RSWR UQFN RSW 10 3000 200.0 183.0 25.0
INA199C1DCKR SC70 DCK 6 3000 340.0 340.0 38.0
INA199C1DCKR SC70 DCK 6 3000 190.0 190.0 30.0
INA199C1RSWR UQFN RSW 10 3000 210.0 185.0 35.0
INA199C2DCKR SC70 DCK 6 3000 180.0 180.0 18.0
INA199C2DCKR SC70 DCK 6 3000 190.0 190.0 30.0
INA199C2RSWR UQFN RSW 10 3000 210.0 185.0 35.0
INA199C3DCKR SC70 DCK 6 3000 190.0 190.0 30.0
INA199C3DCKR SC70 DCK 6 3000 180.0 180.0 18.0
INA199C3DCKT SC70 DCK 6 250 190.0 190.0 30.0
INA199C3DCKT SC70 DCK 6 250 180.0 180.0 18.0

Pack Materials-Page 4
 PACKAGE OUTLINE
DCK0006A SCALE 5.600
SOT - 1.1 max height
SMALL OUTLINE TRANSISTOR

C
2.4
1.8 0.1 C
1.4
B
1.1 A 1.1
PIN 1 0.8
INDEX AREA

1
6

4X 0.65
2.15
1.3
2 1.85

0.30 3
6X
0.15
0.1 C A B 4X 0 -12 0.1
TYP
0.0
NOTE 5

4X 4 -14

0.15
0.22
GAGE PLANE TYP
0.08

8
TYP 0.46
0 TYP SEATING PLANE
0.26

4214835/C 08/2024

NOTES:

1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing
per ASME Y14.5M.
2. This drawing is subject to change without notice.
3. Body dimensions do not include mold flash or protrusion. Mold flash and protrusion shall not exceed 0.15 per side.
4. Falls within JEDEC MO-203 variation AB.

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 EXAMPLE BOARD LAYOUT
DCK0006A SOT - 1.1 max height
SMALL OUTLINE TRANSISTOR

PKG
6X (0.9)

1
6X (0.4) 6

SYMM
2
4X (0.65)

4
3

(R0.05) TYP (2.2)

LAND PATTERN EXAMPLE

EXPOSED METAL SHOWN
SCALE:18X

SOLDER MASK
SOLDER MASK METAL METAL UNDER OPENING
OPENING SOLDER MASK

EXPOSED METAL EXPOSED METAL

0.07 MAX 0.07 MIN

ARROUND ARROUND

NON SOLDER MASK SOLDER MASK

DEFINED DEFINED
(PREFERRED)

SOLDER MASK DETAILS

4214835/C 08/2024

NOTES: (continued)

5. Publication IPC-7351 may have alternate designs.

6. Solder mask tolerances between and around signal pads can vary based on board fabrication site.

www.ti.com
 EXAMPLE STENCIL DESIGN
DCK0006A SOT - 1.1 max height
SMALL OUTLINE TRANSISTOR

PKG
6X (0.9)
1
6X (0.4) 6

SYMM
2
4X(0.65)

4
3

(R0.05) TYP
(2.2)

SOLDER PASTE EXAMPLE

BASED ON 0.125 THICK STENCIL
SCALE:18X

4214835/C 08/2024

NOTES: (continued)

7. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate
design recommendations.
8. Board assembly site may have different recommendations for stencil design.

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 PACKAGE OUTLINE
RSW0010A SCALE 7.000
UQFN - 0.55 mm max height
PLASTIC QUAD FLATPACK - NO LEAD

1.45
B A
1.35

PIN 1 INDEX AREA

1.85
1.75

0.55
0.45 C
NOTE 3
SEATING PLANE
0.05
0.00 0.05 C

2X 0.8
SYMM (0.13) TYP
3 5

0.45
9X
0.35

2
6
SYMM
6X 0.4

7
1

0.25
10X
0.15
0.07 C A B
10 8
0.05
0.55 PIN 1 ID
0.45

4224897/A 03/2019

NOTES:

1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing
per ASME Y14.5M.
2. This drawing is subject to change without notice.
3. This package complies to JEDEC MO-288 variation UDEE, except minimum package height.

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 EXAMPLE BOARD LAYOUT
RSW0010A UQFN - 0.55 mm max height
PLASTIC QUAD FLATPACK - NO LEAD

SYMM

10 8
SEE SOLDER MASK
DETAIL

10X (0.2)
1 (0.7)
7
SYMM
6X (0.4)

6 (1.6)
2
(R0.05) TYP

9X (0.6)

3 5

(1.2)

LAND PATTERN EXAMPLE

EXPOSED METAL SHOWN
SCALE: 30X

0.05 MIN
0.05 MAX ALL AROUND
ALL AROUND
METAL UNDER
METAL EDGE SOLDER MASK

EXPOSED METAL SOLDER MASK EXPOSED SOLDER MASK

OPENING METAL OPENING

NON SOLDER MASK

DEFINED SOLDER MASK DEFINED
(PREFERRED)

SOLDER MASK DETAILS

4224897/A 03/2019
NOTES: (continued)

4. This package is designed to be soldered to a thermal pad on the board. For more information, see Texas Instruments literature
number SLUA271 (www.ti.com/lit/slua271).
5. Vias are optional depending on application, refer to device data sheet. If any vias are implemented, refer to their locations shown
on this view. It is recommended that vias under paste be filled, plugged or tented.

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 EXAMPLE STENCIL DESIGN
RSW0010A UQFN - 0.55 mm max height
PLASTIC QUAD FLATPACK - NO LEAD

SYMM

10 8

10X (0.2)
1 (0.7)

7
SYMM
6X (0.4)

6 (1.6)
2
(R0.05) TYP

9X (0.6)

3 5

(1.2)

SOLDER PASTE EXAMPLE

BASED ON 0.125 MM THICK STENCIL
SCALE: 30X

4224897/A 03/2019

NOTES: (continued)

6. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate
design recommendations.

www.ti.com
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