SUB75P03-07, SUP75P03-07

Vishay Siliconix

P-Channel 30 V (D-S) 175 °C MOSFET

PRODUCT SUMMARY FEATURES

VDS (V) RDS(on) () ID (A) a • Compliant to RoHS Directive 2002/95/EC
Available

0.007 at VGS = - 10 V ± 75
- 30 RoHS*
0.010 at VGS = - 4.5 V ± 75 COMPLIANT

TO-220AB TO-263

G D S
Top View
DRAIN connected to TAB

SUB75P03-07
G

G D S

Top View

SUP75P03-07

Ordering Information: SUB75P03-07 (TO-263)

SUB75P03-07-E3 (TO-263, Lead (Pb)-free) D
SUP75P03-07 (TO-220AB)
SUP75P03-07-E3 (TO-220AB, Lead (Pb)-free) P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

Parameter Symbol Limit Unit
Gate-Source Voltage VGS ± 20 V
TC = 25 °C - 75a
Continuous Drain Current (TJ = 175 °C) ID
TC = 125 °C - 65
A
Pulsed Drain Current IDM - 240
Avalanche Current IAR - 60
Repetitive Avalanche Energyb L = 0.1 mH EAR 180 mJ
TC = 25 °C (TO-220AB and TO-263) 187d
Power Dissipation PD W
TA = 25 °C (TO-263)c 3.75
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 175 °C

THERMAL RESISTANCE RATINGS

Parameter Symbol Limit Unit
PCB Mount (TO-263)c 40
Junction-to-Ambient RthJA
Free Air (TO-220AB) 62.5 °C/W
Junction-to-Case RthJC 0.8
Notes:
a. Package limited.
b. Duty cycle  1 %.
c. When mounted on 1" square PCB (FR-4 material).
d. See SOA curve for voltage derating.

* Pb containing terminations are not RoHS compliant, exemptions may apply.

Document Number: 71109 www.vishay.com

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Vishay Siliconix

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

Parameter Symbol Test Conditions Min. Typ. Max. Unit
Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = - 250 µA - 30
V
Gate Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA -1 -3
Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA
VDS = - 30 V, VGS = 0 V -1
Zero Gate Voltage Drain Current IDSS VDS = - 30 V, VGS = 0 V, TJ = 125 °C - 50 µA
VDS = - 30 V, VGS = 0 V, TJ = 175 °C - 250
On-State Drain Currenta ID(on) VDS = -5 V, VGS = - 10 V - 120 A
VGS = - 10 V, ID = - 30 A 0.0055 0.007
VGS = - 10 V, ID = - 30 A, TJ = 125 °C 0.010
Drain-Source On-State Resistancea RDS(on) 
VGS = - 10 V, ID = - 30 A, TJ = 175 °C 0.013
VGS = - 4.5 V, ID = - 20 A 0.008 0.010
a
Forward Transconductance gfs VDS = - 15 V, ID = - 75 A 20 S
Dynamicb
Input Capacitance Ciss 9000
Output Capacitance Coss VGS = 0 V, VDS = - 25 V, f = 1 MHz 1565 pF
Reversen Transfer Capacitance Crss 715
Total Gate Chargec Qg 160 240
Gate-Source Chargec Qgs VDS = - 15 V, VGS = - 10 V, ID = - 75 A 32 nC
c
Gate-Drain Charge Qgd 30
Turn-On Delay Timec td(on) 25 40
Rise Timec tr VDD = - 15 V, RL = 0.2  225 360
ns
Turn-Off Delay Timec td(off) ID  - 75 A, VGEN = - 10 V, Rg = 2.5  150 240
Fall Timec tf 210 340
Source-Drain Diode Ratings and Characteristicsb (TC = 25 °C)
Continuous Current IS - 75
A
Pulsed Current ISM - 240
Forward Voltagea VSD IF = - 75 A, VGS = 0 V - 1.2 - 1.5 V
Reverse Recovery Time trr 55 100 ns
Peak Reverse Recovery Current IRM(REC) IF = - 75 A, dI/dt = 100 A/µs 2.5 5 A
Reverse Recovery Charge Qrr 0.07 0.25 µC
Notes:
a. Pulse test; pulse width  300 µs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.

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Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

250 200
TC = - 55 °C
VGS = 10 V thru 6 V
200 160 25 °C

125 °C
I D - Drain Current (A)

I D - Drain Current (A)

5V
150 120

100 80
4V

50 40

3V

0 0
0 2 4 6 8 10 0 1 2 3 4 5 6

VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)

Output Characteristics Transfer Characteristics

150 0.030

TC = - 55 °C
0.025
RDS(on) - On-Resistance ()

120
g fs - Transconductance (S)

25 °C
0.020
125 °C
90
0.015
VGS = 4.5 V
60
0.010
VGS = 10 V
30 0.005

0 0
0 20 40 60 80 100 0 20 40 60 80 100 120

ID - Drain Current (A) ID - Drain Current (A)

Transconductance On-Resistance vs. Drain Current

12 000 20

VDS = 15 V
VGS - Gate-to-Source Voltage (V)

10 000 Ciss 16 ID = 75 A
C - Capacitance (pF)

8000
12

6000
8
4000
Coss
4
2000

Crss
0 0
0 6 12 18 24 30 0 50 100 150 200 250 300

VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC)

Capacitance Gate Charge

Document Number: 71109 www.vishay.com

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Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

1.8 100
VGS = 10 V
ID = 30 A
1.5

TJ = 150 °C
RDS(on) - On-Resistance

I S - Source Current (A)

1.2
(Normalized)

0.9 10

0.6

TJ = 25 °C
0.3

0 1
- 50 - 25 0 25 50 75 100 125 150 175 0 0.2 0.4 0.6 0.8 1.0

TJ - Junction Temperature (°C) VSD - Source-to-Drain Voltage (V)

On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage

1000 45

ID = 250 µA

100 IAV (A) at TA = 25 °C 40

I Dav (a)

V DS (V)

10 35

IAV (A) at TA = 150 °C

1 30

0.1 25
0.00001 0.0001 0.001 0.01 0.1 1 - 50 - 25 0 25 50 75 100 125 150 175
tin (s) TJ - Junction Temperature (°C)
Avalanche Current vs. Time Drain Source Breakdown
vs. Junction Temperature

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Vishay Siliconix
THERMAL RATINGS
90 1000

75
100 µs
100
I D - Drain Current (A)

I D - Drain Current (A)

60
Limited 1 ms
10 by RDS(on)*
45
10 ms
100 ms
DC
30
1
TC = 25 °C
15 Single Pulse

0 0.1
0 25 50 75 100 125 150 175 0.1 1 10 100

TC - Case Temperature (°C) VDS - Drain-to-Source Voltage (V)

* VGS minimum VGS at which RDS(on) is specified
Maximum Avalanche and Drain Current
Safe Operating Area
vs. Case Temperature

1
Duty Cycle = 0.5
Normalized Effective Transient

0.2
Thermal Impedance

0.1

0.1
0.05

0.02
Single Pulse

0.01
10- 4 10- 3 10- 2 10- 1 1 10

Square Wave Pulse Duration (s)

Normalized Thermal Transient Impedance, Junction-to-Case

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71109.

Document Number: 71109 www.vishay.com

S10-2429-Rev. E, 25-Oct-10 5
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