SEMICONDUCTOR
BZT52CXX Series
TECHNICAL DATA
Zener Diode 500mW SOD-123 Surface Mount
■ Features
● Wide Zener Voltage Range Selection, 2.4V to 75V
● Surface Device Type Mounting
● VZ Tolerance Selection of ±5%
Cathode Anode 0.6±0.1
■ Absolute Maximum Ratings Ta = 25℃
Parameter Symbol Rating Unit
Power Dissipation Pd 500 mW
Junction Temperature TJ 150
Operating Temperature Range TOPR -65 to 150 ℃
Storage Temperature range Tstg -65 to 150
■ Electrical Characteristics Ta = 25℃
VZ @ IZT ZZT @ IZT ZZK @ IZK IR @ VR
Device Device (Volts) IZT IZK VR
(Ω) (Ω) (µA)
Type Marking (mA) (mA) (Volts)
Min Nom Max Max Max Max
BZT52C2V4 2V4Z 2.28 2.4 2.52 5 100 1 564 45 1
BZT52C2V7 2V7Z 2.57 2.7 2.84 5 100 1 564 18 1
BZT52C3V0 3V0Z 2.85 3.0 3.15 5 100 1 564 9 1
BZT52C3V3 3V3Z 3.14 3.3 3.47 5 95 1 564 4.5 1
BZT52C3V6 3V6Z 3.42 3.6 3.78 5 90 1 564 4.5 1
BZT52C3V9 3V9Z 3.71 3.9 4.10 5 90 1 564 2.7 1
BZT52C4V3 4V3Z 4.09 4.3 4.52 5 90 1 564 2.7 1
BZT52C4V7 4V7Z 4.47 4.7 4.94 5 80 1 470 2.7 2
BZT52C5V1 5V1Z 4.85 5.1 5.36 5 60 1 451 1.8 2
BZT52C5V6 5V6Z 5.32 5.6 5.88 5 40 1 376 0.9 2
BZT52C6V2 6V2Z 5.89 6.2 6.51 5 10 1 141 2.7 4
BZT52C6V8 6V8Z 6.46 6.8 7.14 5 15 1 75 1.8 4
BZT52C7V5 7V5Z 7.11 7.5 7.86 5 15 1 75 0.9 5
BZT52C8V2 8V2Z 7.79 8.2 8.61 5 15 1 75 0.63 5
BZT52C9V1 9V1Z 8.65 9.1 9.56 5 15 1 94 0.45 6
BZT52C10 10VZ 9.50 10 10.50 5 20 1 141 0.18 7
BZT52C11 11VZ 10.45 11 11.55 5 20 1 141 0.09 8
BZT52C12 12VZ 11.40 12 12.60 5 25 1 141 0.09 8
BZT52C13 13VZ 12.35 13 13.65 5 30 1 160 0.09 8
BZT52C15 15VZ 14.25 15 15.75 5 30 1 188 0.045 10.5
BZT52C16 16VZ 15.20 16 16.80 5 40 1 188 0.045 11.2
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BZT52CXX Series
■ Electrical Characteristics Ta = 25℃
VZ @ IZT ZZT @ IZT ZZK @ IZK IR @ VR
Device Device (Volts) IZT IZK VR
(Ω) (Ω) (µA)
Type Marking (mA) (mA) (Volts)
Min Nom Max Max Max Max
BZT52C18 18VZ 17.10 18 18.90 5 45 1 212 0.045 12.6
BZT52C20 20VZ 19.00 20 21.00 5 55 1 212 0.045 14.0
BZT52C22 22VZ 20.90 22 23.10 5 55 1 235 0.045 15.4
BZT52C24 24VZ 22.80 24 25.20 5 70 1 235 0.045 16.8
BZT52C27 27VZ 25.65 27 28.35 2 80 0.5 282 0.045 18.9
BZT52C30 30VZ 28.50 30 31.50 2 80 0.5 282 0.045 21.0
BZT52C33 33VZ 31.35 33 34.65 2 80 0.5 306 0.045 23.0
BZT52C36 36VZ 34.20 36 37.80 2 90 0.5 329 0.045 25.2
BZT52C39 39VZ 37.05 39 40.95 2 130 0.5 329 0.045 27.3
BZT52C43 43VZ 40.85 43 45.15 2 150 0.5 353 0.045 30.1
BZT52C47 47VZ 44.65 47 49.35 2 170 0.5 353 0.045 33.0
BZT52C51 51VZ 48.45 51 53.55 2 180 0.5 376 0.045 35.7
BZT52C56 56VZ 53.20 56 58.80 2 200 0.5 400 0.045 39.2
BZT52C62 62VZ 58.90 62 65.10 2 215 0.5 423 0.045 43.4
BZT52C68 68VZ 64.60 68 71.40 2 240 0.5 447 0.045 47.6
BZT52C75 75VZ 71.25 75 78.75 2 255 0.5 470 0.045 52.5
VF Forward Voltage = 900mV Maximum @ IF = 10 mA for all types
Notes:
1. The Zener Voltage (VZ) is tested under pulse condition of 10mS.
2. The device numbers listed have a standard tolerance on the nominal zener voltage of ±5%.
3. For detailed information on price, availability and delivery of nominal zener voltages between the voltages shown and tighter
voltage tolerances, contact your nearest Tak Cheong Electronics representative.
4. The zener impedance is derived from the 60-cycle ac voltage, which results when an ac current having an rms value equal to
10% of the dc zener current (IZT or IZK) is superimposed to IZT or IZK.
■ Typical Characterisitics
Fig.1 TYPICAL FORWARD VOLTAGE Fig.2 EFFECT OF ZENER VOLTAGE ON ZENER IMPEDANCE
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BZT52CXX Series
■ Typical Characterisitics
600
500
POWER PASSIPATION,mW
400
300
200
100
0
0 25 50 75 100 125 150 175 200
TEMPERATURE [ ]
Fig.3 POWER DISSIPATION VS. AMBIENT TEMP. Fig.4 TYPICAL CAPACITANCE
Fig.5 ZENER BREAKDOWN CHARACTERISTICS Fig.6 ZENER BREAKDOWN CHARACTERISTICS
Fig.7 TYPICAL LEAKGE CURRENT
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