2SA1887
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
                                                    2SA1887
High-Current Switching Applications
                                                                                                                            Unit: mm
•   Low collector saturation voltage: VCE (sat) = −0.4 V (max)
                                            at IC = −5 A
Maximum Ratings (Tc = 25°C)
                Characteristics                 Symbol           Rating           Unit
    Collector-base voltage                       VCBO               −80            V
    Collector-emitter voltage                    VCEO               −50            V
    Emitter-base voltage                         VEBO               −7             V
    Collector current                              IC               −10            A
    Collector power             Ta = 25°C                           2.0
                                                  PC                              W
    dissipation                 Tc = 25°C                           25
    Junction temperature                           Tj               150           °C
    Storage temperature range                     Tstg         −55 to 150         °C         JEDEC                   ―
                                                                                             JEITA                  SC-67
                                                                                             TOSHIBA              2-10R1A
                                                                                             Weight: 1.7 g (typ.)
Electrical Characteristics (Tc = 25°C)
                Characteristics                 Symbol                    Test Condition           Min     Typ.      Max      Unit
    Collector cut-off current                    ICBO       VCB = −70 V, IE = 0                      ―      ―         −1      µA
    Emitter cut-off current                      IEBO       VEB = −7 V, IC = 0                       ―      ―         −1      µA
    Collector-emitter breakdown voltage       V (BR) CEO    IC = −10 mA, IB = 0                    −50      ―         ―        V
    DC current gain                               hFE       VCE = −1 V, IC = −1 A                  120      ―        400
    Collector-emitter saturation voltage       VCE (sat)    IC = −5 A, IB = −0.25 A                  ―     −0.2      −0.4      V
    Base-emitter saturation voltage            VBE (sat)    IC = −5 A, IB = −0.25 A                  ―    −0.95      −1.4      V
    Transition frequency                           fT       VCE = −1 V, IC = −1 A                    ―      45        ―       MHz
    Collector output capacitance                  Cob       VCB = −10 V, IE = 0, f = 1 MHz           ―     215        ―       pF
Marking
                        A1887           Part No. (or abbreviation code)
                                        Lot No.
                                        A line indicates
                                        lead (Pb)-free package or
                                        lead (Pb)-free finish.
                                                                     1                                              2004-07-26
                                                                                                          2SA1887
RESTRICTIONS ON PRODUCT USE                                                                                     030619EAA
• The information contained herein is subject to change without notice.
• The information contained herein is presented only as a guide for the applications of our products. No
  responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
  may result from its use. No license is granted by implication or otherwise under any patent or patent rights of
  TOSHIBA or others.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
  devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
  stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
  safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
  such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
  In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
  set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
  conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
  Handbook” etc..
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
  (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
  etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
  extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
  bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
  spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
  medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
  document shall be made at the customer’s own risk.
• TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced
  and sold, under any law and regulations.
                                                          2                                              2004-07-26