RESEARCH ARTICLE | FEBRUARY 15 2023

Numerical modeling of CuSbSe2-based dual-heterojunction

thin film solar cell with CGS back surface layer
Bipin Saha ; Bipanko Kumar Mondal ; Shaikh Khaled Mostaque ; Mainul Hossain  ;
Jaker Hossain 

AIP Advances 13, 025255 (2023)

https://doi.org/10.1063/5.0133889

CrossMark

 
View Export
Online Citation

08 February 2024 05:27:27

 AIP Advances ARTICLE scitation.org/journal/adv

Numerical modeling of CuSbSe2-based

dual-heterojunction thin film solar cell
with CGS back surface layer
Cite as: AIP Advances 13, 025255 (2023); doi: 10.1063/5.0133889
Submitted: 7 November 2022 • Accepted: 27 January 2023 •
Published Online: 15 February 2023

Bipin Saha,1 Bipanko Kumar Mondal,2 Shaikh Khaled Mostaque,1 Mainul Hossain,3
and Jaker Hossain1,a)

AFFILIATIONS
1
Solar Energy Laboratory, Department of Electrical and Electronic Engineering, University of Rajshahi,
Rajshahi 6205, Bangladesh
2
Department of Electrical and Electronic Engineering, Pundra University of Science and Technology, Bogura 5800, Bangladesh
3
Department of Electrical and Electronic Engineering, University of Dhaka, Dhaka 1000, Bangladesh

a)
Author to whom correspondence should be addressed: jak_apee@ru.ac.bd

08 February 2024 05:27:27

ABSTRACT
Ternary chalcostibite copper antimony selenide (CuSbSe2 ) can be a potential absorber for succeeding thin film solar cells due to its non-toxic
nature, earth-abundance, low-cost fabrication technique, optimum bandgap, and high optical absorption coefficient. The power conversion
efficiencies (PCEs) in conventional single heterojunction CuSbSe2 solar cells suffer from higher recombination rate at the interfaces and
the presence of a Schottky barrier at the back contact. In this study, we propose a dual-heterojunction n-ZnSe/p-CuSbSe2 /p+ -copper gal-
lium selenide (CGS) solar device, having CGS as the back surface field (BSF) layer. The BSF layer absorbs low energy (sub-bandgap) light
through a tail-states-assisted upconversion technique, leading to enhanced conversion efficiency. Numerical simulations were run in Solar
Cell Capacitance Simulator-1 dimensional software to examine how the performance of the proposed solar cell would respond under different
conditions of absorber layer thickness, doping levels, and defect densities. The simulation results exhibit a PCE as high as 43.77% for the dual-
heterojunction solar cell as compared to 27.74% for the single heterojunction n-ZnSe/p-CuSbSe2 counterpart, demonstrating the capability of
approaching the detailed balance efficiency limit calculated by Shockley–Queisser.
© 2023 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license
(http://creativecommons.org/licenses/by/4.0/). https://doi.org/10.1063/5.0133889

I. INTRODUCTION high processing temperature of Si (∼1400 ○ C).4 Moreover, defect

levels in amorphous-Si (a-Si) limit the further developments of a-
Solar energy provides a safer and cleaner alternative to the Si/c-Si heterojunctions.5 Although cadmium telluride (CdTe) and
rapidly depleting fossil fuels. Although the present photovoltaic copper indium gallium arsenide (CIGS) thin films exhibit good
(PV) industry is being governed by homojunction crystalline-silicon absorption in the visible solar wavelength and provide modest
(c-Si) based solar cells, single junction silicon PV devices are yet power conversions, their efficiencies are still inferior to that of Si.
bound to the theoretical Shockley–Queisser (SQ) efficiency limit of Apart from the toxic nature of these materials, the manufactur-
32.33%.1,2 Recent studies have, therefore, focused on heterojunc- ing costs are increasingly dominated by constituent materials, such
tion solar cell structures, with power conversion efficiencies (PCEs) as the top cover sheet, and other encapsulants.6,7 Third-generation
approaching the SQ limit. Yoshikawa et al.,3 for example, experi- solar cells, based on III-V compounds and their tandems, are also
mentally demonstrated a 26.6% efficient interdigitated back contact being investigated, as a viable alternative to Si, for achieving high
(IBC) Si heterojunction solar cell with a realistic module size of PCE solar cells.8 Many studies have concentrated their efforts on
180 cm2 . Despite the success, silicon-based solar cells are handi- perovskite9–11 and polymer12 solar cells. However, despite the high
capped by the low absorption coefficient in longer wavelengths and PCEs, both perovskite and polymer solar cells suffer from stabil-

AIP Advances 13, 025255 (2023); doi: 10.1063/5.0133889 13, 025255-1

© Author(s) 2023
 AIP Advances ARTICLE scitation.org/journal/adv

ity issues, which limit their long-term applicability.13 Highly stable, terms of the orthorhombic structure of CuSbSe2 in which the lone
inorganic, dual-heterojunction solar cells promise to deliver high pair electron configuration of Sb distorts the tetragonal bonds,
PCE at low cost. Our previous simulations have achieved a PCE resulting in a layered structure with zero dangling bonds that are
over 40% with application of back surface field layer in CdTe-based primarily responsible for grain boundary carrier recombination.
double-heterojunction structures.14 Hence, CuSbSe2 structure is more defect tolerant.15,19 ZnSe is
Here, we propose a dual-heterojunction n-ZnSe/p- chosen as window material owing to the suitable properties, such
CuSbSe2 /p+ -copper gallium selenide (CGS) solar cell, having as wide bandgap (2.7 eV), earth-abundance, and high optical
ZnSe as the window and CGS (CuGaSe2 ) as the back surface field transmission in the visible range.20–23 The thin layer of ZnSe
(BSF) layers. The p-doped CuSbSe2 serves as the main absorber allows more than 80% of the incoming light to reach the under-
layer with a carrier density of 5.6 × 1015 cm−3 , suitable bandgap lying CuSbSe2 absorber layer without being absorbed.20,24,25 In
between 1.0 and 1.6 eV, and higher absorption coefficient in the addition, as compared to other more commonly used window
order of 104 cm−1 . The excellent electrical and optical properties, layers, ZnSe is less sensitive to moisture and oxidation.21 CGS
low cost, earth abundance, and non-toxic nature have further (CuGaSe2 ) possesses an energy bandgap of 1.68 eV and a high
exemplified CuSbSe2 as a propitious absorber.15 Unlike Si, which absorption coefficient in longer wavelengths,26,27 which make CGS
requires a very high processing temperature, the growth of CuSbSe2 an excellent BSF layer for enhancing the PCE of the proposed solar
is favored at low temperatures ranging between 380 and 410 ○ C.16,17 PV cell.
The existence of the lone pair of 5s2 electrons in CuSbSe2 plays role In the present work, we employ numerical calculations in Solar
behind significant absorption of light. CuSbSe2 reduces the surface Cell Capacitance Simulator-1 dimensional (SACPS-1D) software
roughness and back surface recombination in the absorption layer, that solves Poisson’s equation and the continuity equations for free
facilitating the collection of carriers.18 This can be explained in electrons and holes to assess how well the absorber, window, and

08 February 2024 05:27:27

FIG. 1. The (a) block and (b) sin-
gle sun illumined energy diagrams
of the designed n-ZnSe/p-CuSbSe2 /p+ -
CGS thin film solar PV cell.

TABLE I. Input parameters used for simulating ZnSe/CuSbSe2 /CGS heterojunction solar cells at a temperature of 300 K.

Parameters n-ZnSe30 p-CuSbSe2 31 p+ -CGS32

Layer Window Absorber BSF
Conductivity N-type P-type P+ -type
Thickness (μm)a 0.2 0.8 0.2
Bandgap, Eg (eV) 2.7 1.08 1.66
Electron affinity, χ (eV) 4.09 4.11 3.61
Effective DOS at CB, NC (cm−3 ) 1.5 × 1018 9.9 × 1019 2.2 × 1017
Effective DOS at VB, NV (cm−3 ) 1.8 × 1019 9.9 × 1019 1.8 × 1018
2 −1 −1
Electron mobility, μn [cm V s ] 50 10 100
Hole mobility, μp [cm2 V−1 s−1 ] 20 10 250
Donor concentration, ND (cm−3 )a 1 × 1018 0 0
Acceptor concentration, NA (cm−3 )a 0 1 × 1016 1 × 1018
Defects types Acceptor Donor Neutral
Energetic distribution Gaussian Gaussian Single
Peak defect density, Nt [eV−1 cm−3 ]a 5.64 × 1013 5.64 × 1013 1 × 1013
Reference energy (eV) 1.350 0.650 0.6
Capture cross section of electrons for acceptor defect (cm2 ) 1 × 10−15 1 × 10−15 1 × 10−15
Capture cross section of holes for acceptor defect (cm2 ) 1 × 10−15 1 × 10−17 1 × 10−15
a
Variable field.

AIP Advances 13, 025255 (2023); doi: 10.1063/5.0133889 13, 025255-2

© Author(s) 2023
 AIP Advances ARTICLE scitation.org/journal/adv

BSF layers functions in relation to their thickness, doping levels, and On the contrary, CGS has an electron affinity and bandgap of 3.61
defect levels.28 and 1.66 eV, respectively. As a result, it can also construct a proper
pp+ interface with the CuSbSe2 layer. In Fig. 1(b), EFn and EFp
represent the developed quasi-Fermi levels of electron and hole,
II. DEVICE STRUCTURE AND SIMULATION MODEL respectively, in each of the layers. The electrons generated in the
In the modeled structure shown in Fig. 1(a), the incident CuSbSe2 and CGS layers can be easily transported to the cathode
sunlight passes through the ZnSe layer and is absorbed in the and holes generated in the CuSbSe2 , and CGS can also move toward
CuSbSe2 and CGS layers. ZnSe has the electron affinity and ion- the anode favored by the suitable energy barriers.
ization potential of 4.09 and 6.79 eV, respectively,24 whereas those The numerical simulations were performed considering one-
of CuSbSe2 are 4.11 and 5.19 eV, respectively.29 Therefore, ZnSe sun illumination with a power density of 100 mW/cm2 of the global
comprises a compatible pn heterojunction with CuSbSe2 compound. air mass (AM) 1.5G spectrum and the cell temperature of 300 K.

TABLE II. Interface parameters used in the simulation.

Parameters CuSbSe2 /p+ -CGS CuSbSe2 /n-ZnSe

Types of defects Neutral defect Neutral defect
Cross section of electrons capture (cm2 ) 1.0 × 10−19 1.0 × 10−19
Capture cross-section of holes (cm2 ) 1.0 × 10−19 1.0 × 10−19
Distribution of energy Single Single
Reference for defect energy level, Et Over the EV Over the EV
Energy with respect to reference (eV) 0.6 0.6
Total number of defects (cm−2 ) 1 × 109 1 × 1010

08 February 2024 05:27:27

FIG. 2. Output PV performance varia-
tion on changing the (a) width, (b) dop-
ing concentration, (c) bulk defects of
the CuSbSe2 layer, and (d) the effect
of CuSbSe2 absorber width on quantum
efficiency (QE) of the device.

AIP Advances 13, 025255 (2023); doi: 10.1063/5.0133889 13, 025255-3

© Author(s) 2023
 AIP Advances ARTICLE scitation.org/journal/adv

Note that the values of series and shunt resistances of the device were As the recombination increases with the absorber thickness, V OC
considered as ideal and the coefficient of radiative recombination gets slightly decreased from 0.94 to 0.92 V after expanding the
was not taken into account. Acceptor and donor doping profiles in absorber layer thickness from 0.6 to 1 μm. The FF and PCE remain
the bulk layers were considered to be Gaussian, and the interface fairly constant, ranging between 79.72% and 79.25% for the FF and
defects were also taken into account. 43.76% and 43.64% for the PCE. The maximum PCE is 43.79% and
The experimental values of absorption coefficients for ZnSe, is obtained with a 0.7 μm thick CuSbSe2 absorber layer. Figure 2(b)
CuSbSe2 , and CGS layers were obtained from previous studies.15,33 shows the change in device characteristics when the doping con-
SCAPS-1D automatically takes into consideration the influence centration in CuSbSe2 is varied. J SC remains almost unchanged,
of low energy (sub-bandgap) absorption from the optical data. varying only slightly between 58.94 and 58.93 mA/cm2 for dop-
The simulation parameters used for different layers are pro- ing concentrations of 1014 to 1018 cm−3 , respectively. Voc follows
vided in Table I, and the interfaces parameters are provided a similar trend, maintaining a steady value of around 0.93 V. The
in Table II. FF, however, drops from 78.88% to 71.86% below a doping level
of 1017 cm−3 , affecting the overall PCE. The PCE varies between
III. RESULTS AND DISCUSSION 43.8% and 39.39% with doping concentrations of 1014 to 1018 cm−3 ,
respectively.
A. CuSbSe2 absorber layer The change of PV performance parameters with CuSbSe2 bulk
The short circuit current density (J SC ), open circuit voltage defect density is exhibited in Fig. 2(c). The bulk defects ranges
(V OC ), fill factor (FF), and overall PCE of the modeled photovoltaic from 1012 to 1018 cm−3 . A high defect level impedes the creation
cell were calculated for CuSbSe2 thickness ranging between 0.6 and of electron–hole pairs, leading to decreasing J SC with defect density.
1.0 μm, as shown in Fig. 2(a). A thick absorber layer absorbs addi- Furthermore, the Shockley–Read–Hall (SRH) carrier recombination
tional photons and generates large number of electron–hole pairs. mechanism leads to the increase in the dark current and the decrease
Hence, J SC increases from 57.94 mA/cm2 when CuSbSe2 is 0.6 μm in V OC . Thus, V OC gets abruptly down from 1.03 to 0.44 V and the
thick to 59.58 mA/cm2 when the layer thickness becomes 1 μm. corresponding FF drops from 81.26% to 72.55% due to the high

08 February 2024 05:27:27

FIG. 3. Output PV behavior on varying
ZnSe window: (a) width, (b) donor con-
centration, and (c) bulk defects density.

AIP Advances 13, 025255 (2023); doi: 10.1063/5.0133889 13, 025255-4

© Author(s) 2023
 AIP Advances ARTICLE scitation.org/journal/adv

defects of CuSbSe2 layer, causing the corresponding PCEs to vary the same trend with the PCE ranging from 43.63% to 43.79% for a
from 49.32% to 13.45%. specified ZnSe doping range.
Figure 2(d) shows how the QE of the modeled PV cell changes The defect density of ZnSe also affects the PV parameters as
with CuSbSe2 thickness. As expected, the thicker absorber layer depicted in Fig. 3(c). Bulk defects of the ZnSe window layer have
results in higher QE due to higher number of absorbed photons. At negligible effects on the J SC and V OC , but the FF and PCE decreases
shorter wavelengths, QE is almost independent of CuSbSe2 thick- at defect levels greater than 1017 cm−3 .
ness. However, at a longer wavelength regime, QE decreases as
photon energy, hν of the incident light less than the bandgap Eg of C. CGS BSF layer
CuSbSe2 .
The CGS layer on the back surface serves as the bottom
absorber layer and contributes significantly to the improvement of
the output PV parameters on the proposed solar cell. In Fig. 4(a),
B. ZnSe window layer the CGS layer thickness is varied from 0.1 to 0.5 μm. J SC is found
The changes in J SC , V OC , FF, and PCE for varying thickness of to be 44.07 mA/cm2 without the BSF layer. However, when only
the ZnSe window are shown in Fig. 3(a). It is noticed in the figure 0.1 μm thick CGS layer is employed in the structure, the current
that a modest increment in J SC , occurs when the thickness of the is significantly enhanced to 54.43 mA/cm2 . Furthermore, J SC con-
window ZnSe layer is increased. Over the thickness range, the rest of tinuously increases with increasing thickness of CGS layer reaching
the parameters remains constant. 65.04 mA/cm2 when the CGS becomes 0.5 μm thick. This occurs
Figure 3(b) illustrates the fluctuation in J SC , V OC , FF, and PCE because the CGS BSF layer absorbs longer wavelength incident pho-
with change in doping concentrations in the ZnSe layer. The dop- tons through a two-step upconversion technique by Urbach energy
ing level in ZnSe was altered from 1016 to 1020 cm−3 . Both J SC and states, namely, tail-state-assisted (TSA) upconversion.34,35 In the
V OC remain fairly unchanged, with J SC and V OC showing a slightly process of TSA upconversion, low energy light transmitted to the
decreasing and increasing trends, respectively, as the doping con- bottom BSF is absorbed in two steps by the Urbach states, creating
centration is raised from 1016 to 1020 cm−3 . The FF and PCE follows an extra electron–hole pair.32,36 This in turn leads to significantly

08 February 2024 05:27:27

FIG. 4. PV performance parameters with
respect to CGS BSF: (a) width, (b)
acceptor concentration, (c) bulk defects,
and (d) the impact of CGS BSF width on
QE of the proposed model.

AIP Advances 13, 025255 (2023); doi: 10.1063/5.0133889 13, 025255-5

© Author(s) 2023
 AIP Advances ARTICLE scitation.org/journal/adv

FIG. 5. Fluctuations in PV para-

meters due to interface defects at (a)
CuSbSe2 /ZnSe and (b) CGS/CuSbSe2
interfaces.

highest J SC with increasing CGS BSF layer thickness. Correspond- the CuSbSe2 /ZnSe interface cause the V OC to drop from ∼0.94 to
ingly, the open circuit voltage V OC enhances from 0.73 to 0.93 V ∼0.80 V, as depicted in Fig. 5(a). J SC remains fairly constant while
with the CGS thickness. The insertion of the CGS layer generates the FF increases from 79.2% to 83.6%, causing the PCE to drop from
a high built-in potential in the CuSbSe2 /CGS interface that is the 43.5% to 39% as the defect density increases. A similar trend, as
responsible for high V OC . The FF decreases when the CGS layer is shown in Fig. 5(b), is noticed for the CGS/CuSbSe2 interface.
introduced. However, it remains constant with the change in thick-
ness of the CGS layer. Since both J SC and V OC are enhanced, the E. Temperature dependence
overall PCE increases from 40.21% to 48.61%, over the range of CGS Carrier mobilities in semiconductors decrease with increasing
thickness.

08 February 2024 05:27:27

temperatures, leading to a reduction in bond energies. This, in turn,
Figure 4(b) displays the consequences of adjusting the accep- causes the bandgap to decrease, affecting the absorption properties.
tor density of the CGS BSF layer from 1016 to 1020 cm−3 . J SC changes Because of the square relationship between the reverse saturation
abruptly from 59.49 to 54.60 mA/cm2 when the density of the carrier current (I o ) and intrinsic carrier concentration (ni ) in solar cells,
is increased beyond 1018 cm−3 . The decrement of the short circuit V OC is highly impacted by temperature fluctuations. At higher tem-
current at a higher carrier concentration can be attributed to the peratures, the recombination rate of the electrons (es) and holes (hs)
parasitic absorption of free-carriers that increases linearly with the increases significantly, which lowers the number of photo-generated
increase in the number of carriers.37 V OC slightly decreases from e-h pairs to be collected at the anode and cathode in the cell. Figure 6
0.935 to 0.930 V, while the FF stays unchanged with increasing dop- delineates how the increase in temperature from 273 to 500 K affects
ing concentrations. Overall, the PCE drops from 44.24% to 40.33% the PV parameter values of the solar cell. It is seen that the J SC
with the increment of the carrier concentrations in the CGS BSF
layer.
The existence of defects in the BSF layer inhibits free carrier
generation. Higher level (>1017 cm−3 ) of bulk defects in CuSbSe2
causes the J SC to drop from 58.94 to 56.30 mA/cm2 when the defect
densities change from 1012 to 1018 cm−3 , as shown in Fig. 4(c).
The bulk defects, however, have negligible impact on V OC and FF.
Finally, the PCE also decreases from 43.77% to 41.67% with the
increase in defect density.
In Fig. 4(d), it is evident that the QE enhances gradually with
the increment of CGS thickness. At any given thickness of CGS, in
the longer wavelength region, QE remains significantly high. For
example, at a wavelength of 1600 nm, the QE is > 50% at the 0.2
μm thick CGS BSF layer. This confirms the sub-bandgap photon
absorption by the CGS layer through TSA upconversion approach,
contributing to a significant enhancement in PCE.

D. Interface defects
Defect densities at the CuSbSe2 /ZnSe and CGS/CuSbSe2 inter-
faces influence the PV performance of the proposed model as
FIG. 6. PV parameters with respect to operating temperature.
depicted in Figs. 5(a) and 5(b), respectively. High defect levels at

AIP Advances 13, 025255 (2023); doi: 10.1063/5.0133889 13, 025255-6

© Author(s) 2023
 AIP Advances ARTICLE scitation.org/journal/adv

FIG. 7. Computed (a) J-V and (b) QE

performance of CuSbSe2 -based single-
and double-heterojunction thin film solar
cells.

slightly increases from 58.85 to 59.31 mA/cm2 when the tempera- ACKNOWLEDGMENTS
ture is raised from 273 to 500 K. On the contrary, the V OC drops
The authors would like to thank Professor Dr. Marc Burgel-
from 0.96 to 0.75 V for the same temperature range, which can be
man, University of Gent, Belgium, for providing SCAPS simulation
explained in terms of the increment of the recombination current.
software.
The FF also decreases at higher temperatures, causing the PCE to

08 February 2024 05:27:27

change from 45.64% to 29.89% as the temperature increases from
273 to 500 K. AUTHOR DECLARATIONS
Conflict of Interest
F. Single vs dual heterojunction cells The authors have no conflicts to disclose.
Figures 7(a) and 7(b) show the simulated J-V and QE outlines
of CuSbSe2 -based single- and double-heterojunction PV devices, Author Contributions
respectively. The J SC in the dual-heterojunction is increased by
more than 11.5 mA/cm2 compared to the single heterojunction cell, Bipin Saha: Data curation (equal); Formal analysis (equal); Inves-
as shown in Fig. 7(a). This is because of the absorption of low tigation (equal); Writing – original draft (equal). Bipanko Kumar
energy light through a TSA upconversion technique in the CGS Mondal: Formal analysis (equal); Investigation (equal); Writing –
BSF layer, which is transmitted from the CuSbSe2 layer. The CGS original draft (equal). Shaikh Khaled Mostaque: Formal analy-
layer also increases the built-in potential of the CuSbSe2 /CGS inter- sis (equal); Validation (equal); Writing – original draft (equal).
face, leading to a higher V OC . Figure 7(b) shows that the QE for Mainul Hossain: Formal analysis (equal); Validation (equal);
double-heterojunction device is around 51% toward longer wave- Writing – original draft (equal); Writing – review & edit-
lengths beyond 2000 nm. On the other hand, single heterojunctions, ing (equal). Jaker Hossain: Conceptualization (equal); Supervi-
without the CGS layer, yields 0% QE for the same wavelength ranges sion (equal); Writing – original draft (equal); Writing – review
beyond 2000 nm. & editing (equal).

DATA AVAILABILITY
IV. CONCLUSION
Herein, we used numerical computations to demonstrate the The data that support the findings of this study are available
high-performance n-ZnSe/p-CuSbSe2 /p+ -CGS solar device. Results from the corresponding author upon reasonable request.
confirm that the inclusion of the CGS back surface layer in the
photovoltaic cell remarkably improves the PCE through the TSA
photon upconversion method. The highest efficiency obtained is REFERENCES
43.77% when V OC = 0.93 V, J SC = 58.94 mA/cm2 , and FF = 79.46%, 1
S. Rühle, “Tabulated values of the Shockley–Queisser limit for single junction
respectively. The findings in this work indicate the way for future solar cells,” Sol. Energy 130, 139–147 (2016).
experimental studies on CuSbSe2 and CGS compounds as promis- 2
B. Ehrler, E. Alarcón-Lladó, S. W. Tabernig, T. Veeken, E. C. Garnett, and
ing absorber and BSF layers, respectively, in next generation high A. Polman, “Photovoltaics reaching for the Shockley-Queisser limit, ” ACS Energy
efficiency solar cells. Lett 5, 3029–3033 (2020).

AIP Advances 13, 025255 (2023); doi: 10.1063/5.0133889 13, 025255-7

© Author(s) 2023
 AIP Advances ARTICLE scitation.org/journal/adv

3 19
K. Yoshikawa, W. Yoshida, T. Irie, H. Kawasaki, K. Konishi, H. Ishibashi, D. Colombara, L. M. Peter, K. D. Rogers, J. D. Painter, and S. Roncallo,
T. Asatani, D. Adachi, M. Kanematsu, H. Uzu, and K. Yamamoto, “Exceeding “Formation of CuSbS2 and CuSbSe2 thin films via Chalcogenisation of Sb–Cu
conversion efficiency of 26% by heterojunction interdigitated back contact solar metal precursors,” Thin Solid Films 519, 7438–7443 (2011).
cell with thin film Si technology, ” Sol. Energy Mater. Sol. Cells 173, 37–42 (2017). 20
N. A. Okereke and A. J. Ekpunobi, “ZnSe buffer layer deposition for solar cell
4
S. Almosni, A. Delamarre, Z. Jehl, D. Suchet, L. Cojocaru, M. Giteau, B. Behaghel, application,” J. Non-Oxide Glasses 3, 31–36 (2011).
A. Julian, C. Ibrahim, L. Tatry, H. Wang, T. Kubo, S. Uchida, H. Segawa, 21
J. A. Yater, G. A. Landis, S. G. Bailey, L. C. Olsen, and F. W. Addis, “ZnSe win-
N. Miyashita, R. Tamaki, Y. Shoji, K. Yoshida, N. Ahsan, K. Watanabe, T. Inoue, dow layers for GaAs solar cells,” in Conference Record of the 25th IEEE Photovoltaic
M. Sugiyama, Y. Nakano, T. Hamamura, T. Toupance, C. Olivier, S. Cham- Specialists Conference (IEEE, 1996), pp. 65–68.
bon, L. Vignau, C. Geffroy, E. Cloutet, G. Hadziioannou, N. Cavassilas, P. Rale, 22
N. Spalatu, D. Serban, and T. Potlog, “ZnSe films prepared by the close-spaced
A. Cattoni, S. Collin, F. Gibelli, M. Paire, L. Lombez, D. Aureau, M. Bouttemy, sublimation and their influence on ZnSe/CdTe solar cell performance,” in Pro-
A. Etcheberry, Y. Okada, and J.-F. Guillemoles, “Material challenges for solar cells ceedings 2011 International Semiconductor Conference CAS (IEEE, 2011), Vol. 2,
in the twenty-first century: Directions in emerging technologies, ” Sci. Technol. pp. 451–454.
Adv. Mater. 19, 336–369 (2018) 23
5 S. Sagadevan and I. Das, “Chemical bath deposition (CBD) of zinc selenide
F. Meillaud, M. Boccard, G. Bugnon, M. Despeisse, S. Hänni, F.-J. Haug, J. Persoz, (ZnSe) thin films and characterisation,” Aust. J. Mech. Eng. 15, 222–227 (2017).
J.-W. Schüttauf, M. Stuckelberger, and C. Ballif, “Recent advances and remain- 24
M. A. Sayeed and H. K. Rouf, “Numerical simulation of thin film solar cell
ing challenges in thin-film silicon photovoltaic technology,” Mater. Today 18,
using SCAPS-1D: ZnSe as window layer,” in 2019 22nd International Conference
378–384 (2015).
6 on Computer and Information Technology (ICCIT) (IEEE, 2019), Vol. 2019, pp.
T. D. Lee and A. U. Ebong, “A review of thin film solar cell technologies and
1–5.
challenges,” Renewable Sustainable Energy Rev. 70, 1286–1297 (2017). 25
7 B. K. Mondal, S. K. Mostaque, and J. Hossain, “Theoretical insights into a high-
E. T. Efaz, M. M. Rhaman, S. A. Imam, K. L. Bashar, F. Kabir, M. E. Mourtaza, S.
efficiency Sb2 Se3 -based dual-heterojunction solar cell,” Heliyon 8, e09120 (2022).
N. Sakib, and F. A. Mozahid, “A review of primary technologies of thin-film solar 26
cells,” Eng. Res. Express 3, 032001 (2021). M. Belhadj, A. Tadjer, B. Abbar, Z. Bousahla, B. Bouhafs, and
8 H. Aourag, “Structural, electronic and optical calculations of Cu(In,Ga)Se2
G. Conibeer, “Third-generation photovoltaics,” Mater. Today 10, 42–50 (2007).
9 ternary chalcopyrites,” Phys. Status Solidi B 241, 2516–2528 (2004).
J. Y. Kim, J.-W. Lee, H. S. Jung, H. Shin, and N.-G. Park, “High-efficiency 27
perovskite solar cells,” Chem. Rev. 120, 7867–7918 (2020). S. Ishizuka, A. Yamada, P. J. Fons, H. Shibata, and S. Niki, “Impact of a binary
10 Ga2 Se3 precursor on ternary CuGaSe2 thin-film and solar cell device properties,”
N. Zhou, Q. Cheng, L. Li, and H. Zhou, “Doping effects in SnO2 transport mate-
Appl. Phys. Lett. 103, 143903 (2013).
rial for high performance planar perovskite solar cells,” J. Phys. D: Appl. Phys. 51, 28
394001 (2018). M. Burgelman, K. Decock, A. Niemegeers, J. Verschraegen, and S. Degrave,
11 Scaps Manual, 2021, https://scaps.elis.ugent.be/SCAPS%20manual%20most%20
Y.-H. Chiang, C.-C. Peng, Y.-H. Chen, Y.-L. Tung, S.-Y. Tsai, and P. Chen,
recent.pdf.
“The utilization of IZO transparent conductive oxide for tandem and substrate 29

08 February 2024 05:27:27

type perovskite solar cells,” J. Phys. D: Appl. Phys. 51, 424002 (2018). T. Wada and T. Maeda, “Optical properties and electronic structures of CuSbS2 ,
12 CuSbSe2 , and CuSb(S1−x Sex )2 solid solution,” Phys. Status Solidi C 14, 1600196
H. Fu, Y. Li, J. Yu, Z. Wu, Q. Fan, F. Lin, H. Y. Woo, F. Gao, Z. Zhu, and A.
(2017).
K. Jen, “High efficiency (15.8%) all-polymer solar cells enabled by a regioregular 30
narrow bandgap polymer acceptor,” J. Am. Chem. Soc. 143, 2665–2670 (2021). J. Hossain, “Design and simulation of double-heterojunction solar cells based
13 on Si and GaAs wafers,” J. Phys. Commun. 5, 085008 (2021).
Z. Yi, N. H. Ladi, X. Shai, H. Li, Y. Shen, and M. Wang, “Will organic-inorganic 31
hybrid halide lead perovskites be eliminated from optoelectronic applications?,” Sadanand, P. K. Singh, S. Rai, P. Lohia, and D. K. Dwivedi, “Comparative study
Nanoscale Adv. 1, 1276–1289 (2019). of the CZTS, CuSbS2 and CuSbSe2 solar photovoltaic cell with an earth-abundant
14 non-toxic buffer layer,” Sol. Energy 222, 175–185 (2021).
A. Kuddus, S. K. Mostaque, and J. Hossain, “Simulating the performance of a 32
high-efficiency SnS-based dual-heterojunction thin film solar cell,” Opt. Mater. S. K. Mostaque, B. K. Mondal, and J. Hossain, “Simulation approach to reach
Express 11, 3812–3826 (2021). the SQ limit in CIGS-based dual-heterojunction solar cell,” Optik 249, 168278
15
D. J. Xue, B. Yang, Z. K. Yuan, G. Wang, X. Liu, Y. Zhou, L. Hu, D. Pan, S. Chen, (2022).
33
and J. Tang, “CuSbSe2 as a potential photovoltaic absorber material: Studies from S. Adachi and T. Taguchi “Optical properties of ZnSe,” Phys. Rev. B 43
theory to experiment,” Adv. Energy Mater. 5, 1501203 (2015). 9569–9577 (1991).
16 34
D. Goyal, C. P. Goyal, H. Ikeda, and P. Malar, “Role of growth temperature in W. G. J. H. M. van Sark, J. de Wild, J. K. Rath, A. Meijerink, and R. E. Schropp,
photovoltaic absorber CuSbSe2 deposition through e-beam evaporation,” Mater. “Upconversion in solar cells,” Nanoscale Res. Lett. 8, 81 (2013).
35
Sci. Semicond. Process. 108, 104874 (2020). T. Trupke, A. Shalav, B. S. Richards, P. Würfel, and M. A. Green, “Efficiency
17 enhancement of solar cells by luminescent up-conversion of sunlight,” Sol. Energy
S. Rampino, F. Pattini, M. Bronzoni, M. Mazzer, M. Sidoli, G. Spaggiari, and
E. Gilioli, “CuSbSe2 thin film solar cells with ∼4% conversion efficiency grown by Mater. Sol. Cells 90, 3327–3338 (2006).
36
low-temperature pulsed electron deposition,” Sol. Energy Mater. Sol. Cells 185, A. Ghazy, M. Safdar, M. Lastusaari, H. Savin, and M. Karppinen, “Advances in
86–96 (2018). upconversion enhanced solar cell performance,” Sol. Energy Mater. Sol. Cells 230,
18 111234 (2021).
Q. Cang, H. Guo, X. Jia, H. Ning, C. Ma, J. Zhang, N. Yuan, and J. Ding,
37
“Enhancement in the efficiency of Sb2Se3 solar cells by adding low lattice D. A. Clugston and P. A. Basore, “Modelling free-carrier absorption in solar
mismatch CuSbSe2 hole transport layer,” Sol. Energy 199, 19–25 (2020). cells,” Prog. Photovoltaics Res. Appl. 5, 229–236 (1997).

AIP Advances 13, 025255 (2023); doi: 10.1063/5.0133889 13, 025255-8

© Author(s) 2023