CNY75(G) Series

Vishay Semiconductors

Optocoupler with Phototransistor Output

Description
The CNY75(G) series consists of a phototransistor
optically coupled to a gallium arsenide infrared-
emitting diode in a 6-lead plastic dual inline package.
The elements are mounted on one leadframe using
a coplanar technique, providing a fixed distance
between input and output for highest safety
requirements.

Applications
Circuits for safe protective separation against
14827
electrical shock according to safety class II
(reinforced isolation):

D For appl. class I – IV at mains voltage ≤ 300 V

D For appl. class I – III at mains voltage ≤ 600 V
according to VDE 0884, table 2, suitable for:

Switch-mode power supplies, line receiver, com-

puter peripheral interface, microprocessor
system interface. B C E
6 5 4

VDE Standards
95 10805
These couplers perform safety functions according
to the following equipment standards:
1 2 3
D VDE 0884 A (+) C (–) n.c.
Optocoupler for electrical safety requirements
D IEC 950/EN 60950
Office machines (applied for reinforced isolation
for mains voltage ≤ 400 VRMS)
D VDE 0804
Telecommunication apparatus and data
processing
D IEC 65
Safety for mains-operated electronic and related
household apparatus

Order Instruction
Ordering Code CTR Ranking Remarks
CNY75A/ CNY75GA1) 63 to 125%
CNY75B/ CNY75GB1) 100 to 200%
CNY75C/ CNY75GC1) 160 to 320%
1) G = Leadform 10.16 mm; G is not marked on the body

Rev. A4, 11–Jan–99 1 (12)

CNY75(G) Series
Vishay Semiconductors

Features
Approvals: D Rated recurring peak voltage (repetitive)
VIORM = 600 VRMS
D BSI: BS EN 41003, BS EN 60095 (BS 415),
BS EN 60950 (BS 7002), D Creepage current resistance according to
Certificate number 7081 and 7402 VDE 0303/IEC 112
Comparative Tracking Index: CTI = 275
D FIMKO (SETI): EN 60950,
Certificate number 12399 D Thickness through insulation ≥ 0.75 mm
D Underwriters Laboratory (UL) 1577 recognized, General features:
file number E-76222
D Isolation materials according to UL94-VO
D VDE 0884, Certificate number 94778 D Pollution degree 2
(DIN/VDE 0110 part 1 resp. IEC 664)
VDE 0884 related features: D Climatic classification 55/100/21 (IEC 68 part 1)
D Rated impulse voltage (transient overvoltage) D Special construction:
VIOTM = 6 kV peak Therefore, extra low coupling capacity of
typical 0.3 pF, high Common Mode Rejection
D Isolation test voltage
(partial discharge test voltage) Vpd = 1.6 kV D Low temperature coefficient of CTR
D Rated isolation voltage (RMS includes DC) D CTR offered in 3 groups
VIOWM = 600 VRMS (848 V peak) D Coupling System A

Absolute Maximum Ratings

Input (Emitter)
Parameter Test Conditions Symbol Value Unit
Reverse voltage VR 5 V
Forward current IF 60 mA
Forward surge current tp ≤ 10 ms IFSM 3 A
Power dissipation Tamb ≤ 25°C PV 100 mW
Junction temperature Tj 125 °C
Output (Detector)
Parameter Test Conditions Symbol Value Unit
Collector base voltage VCBO 90 V
Collector emitter voltage VCEO 90 V
Emitter collector voltage VECO 7 V
Collector current IC 50 mA
Collector peak current tp/T = 0.5, tp ≤ 10 ms ICM 100 mA
Power dissipation Tamb ≤ 25°C PV 150 mW
Junction temperature Tj 125 °C
Coupler
Parameter Test Conditions Symbol Value Unit
AC isolation test voltage (RMS) t = 1 min VIO 3.75 kV
Total power dissipation Tamb ≤ 25°C Ptot 250 mW
Ambient temperature range Tamb –55 to +100 °C
Storage temperature range Tstg –55 to +125 °C
Soldering temperature 2 mm from case, t ≤ 10 s Tsd 260 °C

2 (12) Rev. A4, 11–Jan–99

 CNY75(G) Series
Vishay Semiconductors

Electrical Characteristics (Tamb = 25°C)

Input (Emitter)
Parameter Test Conditions Symbol Min. Typ. Max. Unit
Forward voltage IF = 50 mA VF 1.25 1.6 V
Reverse current VR = 6 V IR 10 mA
Junction capacitance VR = 0, f = 1 MHz Cj 50 pF

Output (Detector)
Parameter Test Conditions Symbol Min. Typ. Max. Unit
Collector base voltage IC = 100 mA VCBO 90 V
Collector emitter voltage IC = 1 mA VCEO 90 V
Emitter collector voltage IE = 100 mA VECO 7 V
Collector emitter cut-off VCE = 20 V, IF = 0 ICEO 150 nA
current

Coupler
Parameter Test Conditions Symbol Min. Typ. Max. Unit
Collector emitter IF = 10 mA, IC = 1 mA VCEsat 0.3 V
saturation voltage
Cut-off frequency VCE = 5 V, IF = 10 mA, fc 110 kHz
RL = 100 W
Coupling capacitance f = 1 MHz Ck 0.3 pF

Current Transfer Ratio (CTR)

Parameter Test Conditions Type Symbol Min. Typ. Max. Unit
IC/IF VCE = 5 V, IF = 1 mA CNY75(G)A CTR 0.15
CNY75(G)B CTR 0.3
CNY75(G)C CTR 0.6
VCE = 5 V, IF = 10 mA CNY75(G)A CTR 0.63 1.25
CNY75(G)B CTR 1 2
CNY75(G)C CTR 1.6 3.2

Rev. A4, 11–Jan–99 3 (12)

CNY75(G) Series
Vishay Semiconductors

Maximum Safety Ratings (according to VDE 0884) see figure 1

This device is used for protective separation against electrical shock only within the maximum safety ratings.
This must be ensured by using protective circuits in the applications.
Input (Emitter)
Parameters Test Conditions Symbol Value Unit
Forward current Isi 130 mA

Output (Detector)
Parameters Test Conditions Symbol Value Unit
Power dissipation Tamb ≤ 25°C Psi 265 mW

Coupler
Parameters Test Conditions Symbol Value Unit
Rated impulse voltage VIOTM 6 kV
Safety temperature Tsi 150 °C

Insulation Rated Parameters (according to VDE 0884)

Parameter Test Conditions Symbol Min. Typ. Max. Unit
Partial discharge test voltage – 100%, ttest = 1 s Vpd 1.6 kV
Routine test
Partial discharge
g test voltage
g – tTr = 60 s, ttest = 10 s, VIOTM 6 kV
Lot test (sample test) (see figure 2) Vpd 1.3 kV
Insulation resistance VIO = 500 V RIO 1012 W
VIO = 500 V, RIO 1011 W
Tamb ≤ 100°C
VIO = 500 V, RIO 109 W
Tamb ≤ 150°C
(construction test only)
VIOTM
275
Ptot – Total Power Dissipation ( mW )

V t1, t2 = 1 to 10 s
250
Psi (mW) t3, t4 = 1 s
225
ttest = 10 s
200 tstres = 12 s
175
VPd
150
125 VIOWM
VIORM
100
75 Isi (mA)
50
25
0
0 t3 ttest t4
0 25 50 75 100 125 150 175 t1 tTr = 60 s t2 tstres
95 10923 Tamb – Ambient Temperature ( °C ) 13930
t

Figure 1. Derating diagram Figure 2. Test pulse diagram for sample test according to
DIN VDE 0884

4 (12) Rev. A4, 11–Jan–99

 CNY75(G) Series
Vishay Semiconductors

Switching Characteristics of CNY75(G(A

Parameter Test Conditions Symbol Typ. Unit
Delay time W
VS = 5 V, IC = 10 mA, RL = 100 ((see figure
g 3)) td 2.0 ms
Rise time tr 2.5 ms
Fall time tf 2.7 ms
Storage time ts 0.3 ms
Turn-on time ton 4.5 ms
Turn-off time toff 3.0 ms
Turn-on time VS = 5 V, IF = 10 mA, RL = 1 k W ((see figure
g 4)) ton 10.0 ms
Turn-off time toff 25.0 ms

Switching Characteristics of CNY75(G)B

Parameter Test Conditions Symbol Typ. Unit
Delay time W
VS = 5 V, IC = 10 mA, RL = 100 ((see figure
g 3)) td 2.5 ms
Rise time tr 3.0 ms
Fall time tf 3.7 ms
Storage time ts 0.3 ms
Turn-on time ton 5.5 ms
Turn-off time toff 4.0 ms
Turn-on time VS = 5 V, IF = 10 mA, RL = 1 k W ((see figure
g 4)) ton 16.5 ms
Turn-off time toff 20 ms

Switching Characteristics of CNY75(G)C

Parameter Test Conditions Symbol Typ. Unit
Delay time W
VS = 5 V, IC = 10 mA, RL = 100 ((see figure
g 3)) td 2.8 ms
Rise time tr 4.2 ms
Fall time tf 4.7 ms
Storage time ts 0.3 ms
Turn-on time ton 7.0 ms
Turn-off time toff 5.0 ms
Turn-on time VS = 5 V, IF = 10 mA, RL = 1 k W ((see figure
g 4)) ton 11 ms
Turn-off time toff 37.5 ms

Rev. A4, 11–Jan–99 5 (12)

CNY75(G) Series
Vishay Semiconductors

IF IF +5V
0
IC = 10 mA ; Adjusted through
input amplitude

RG = 50 W
tp 96 11698
= 0.01
T IF
tp = 50 s m
Channel I
Oscilloscope
Channel II RL w 1 MW 0
t
50 W 100 W CL v 20 pF tp

95 10891
IC
100%
Figure 3. Test circuit, non-saturated operation 90%

I I +5V
F F
0 10%
I
C 0
t
R = 50
G
W tr

t td ts tf
p = 0.01
T
t = 50 s
p
m ton toff

Channel I tp pulse duration ts storage time

td delay time tf fall time
tr rise time toff (= ts + tf) turn-off time
Channel II ton (= td + tr) turn-on time
Oscilloscope
50 W 1k W R w1M W
14944 C
L
L
v20 pF

Figure 4. Test circuit, saturated operation Figure 5. Switching times

Typical Characteristics (Tamb = 25_C, unless otherwise specified)

300 1000.0
Coupled device
P tot – Total Power Dissipation ( mW )

250
I F – Forward Current ( mA )

100.0
200
Phototransistor
150 10.0
IR-diode
100
1.0
50

0 0.1
0 40 80 120 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
96 11700 Tamb – Ambient Temperature ( °C ) 96 11862 VF – Forward Voltage ( V )

Figure 6. Total Power Dissipation vs. Figure 7. Forward Current vs. Forward Voltage
Ambient Temperature

6 (12) Rev. A4, 11–Jan–99

 CNY75(G) Series
Vishay Semiconductors

1.5 100
CTR rel – Relative Current Transfer Ratio

1.4 VCE=5V VCE=5V

IF=10mA

IC – Collector Current ( mA )
1.3
10
1.2
1.1
1.0 1
0.9
0.8
0.1
0.7
0.6
0.5 0.01
–30 –20 –10 0 10 20 30 40 50 60 70 80 0.1 1 10 100
96 11918 Tamb – Ambient Temperature ( °C ) 95 11040 IF – Forward Current ( mA )
Figure 8. Relative Current Transfer Ratio vs. Figure 11. Collector Current vs. Forward Current
Ambient Temperature

10000 100
IF=50mA
VCE=30V
ICEO– Collector Dark Current,

IC – Collector Current ( mA )
IF=0
1000 20mA
with open Base ( nA )

10
10mA

100 5mA

1
2mA
10

1mA
CNY75A
1 0.1
0 25 50 75 100 0.1 1 10 100
95 11038 Tamb – Ambient Temperature ( °C ) 95 11041 VCE – Collector Emitter Voltage ( V )
Figure 9. Collector Dark Current vs. Figure 12. Collector Current vs. Collector Emitter Voltage
Ambient Temperature

1 100
IF=50mA
I CB – Collector Base Current ( mA )

20mA
IC – Collector Current ( mA )

VCB=5V
10mA
0.1 10
5mA

2mA
0.01 1

1mA

CNY75B
0.001 0.1
1 10 100 0.1 1 10 100
95 11039 IF – Forward Current ( mA ) 95 11042 VCE – Collector Emitter Voltage ( V )
Figure 10. Collector Base Current vs. Forward Current Figure 13. Collector Current vs. Collector Emitter Voltage

Rev. A4, 11–Jan–99 7 (12)

CNY75(G) Series
Vishay Semiconductors

VCEsat – Collector Emitter Saturation Voltage ( V )

100.0 1.0
IF=50mA
20mA CTR=50%
IC – Collector Current ( mA )

0.8
10mA
CNY75C
10.0
5mA 0.6

2mA
0.4
1.0
1mA
0.2
CNY75C 20%
10%
0.1 0
0.1 1.0 10.0 100.0 1 10 100
96 11919 VCE – Collector Emitter Voltage ( V ) 95 11044 IC – Collector Current ( mA )
Figure 14. Collector Current vs. Collector Emitter Voltage Figure 17. Coll. Emitter Sat. Voltage vs. Coll. Current
VCEsat – Collector Emitter Saturation Voltage ( V )

1.0 1000
CTR=50% VCE=5V

0.8 800
hFE – DC Current Gain

CNY75A
0.6 600

0.4 400
20%

0.2 200
10%
0 0
1 10 100 0.01 0.1 1 10 100
95 11034 IC – Collector Current ( mA ) 95 11035 IC – Collector Current ( mA )
Figure 15. Coll. Emitter Sat. Voltage vs. Coll. Current Figure 18. DC Current Gain vs. Collector Current
VCEsat – Collector Emitter Saturation Voltage ( V )

1.0 1000
CTR=50% CNY75A(G)
CTR – Current Transfer Ratio ( % )

VCE=5V
0.8
CNY75B
100
0.6
20%

0.4
10

0.2
10%

0 1
1 10 100 0.1 1 10 100
95 11043 IC – Collector Current ( mA ) 95 11036 IF – Forward Current ( mA )
Figure 16. Coll. Emitter Sat. Voltage vs. Coll. Current Figure 19. Current Transfer Ratio vs. Forward Current

8 (12) Rev. A4, 11–Jan–99

 CNY75(G) Series
Vishay Semiconductors

1000 50

t on / t off – Turn on / Turn off Time ( s )

CTR – Current Transfer Ratio ( % )

m
CNY75B(G) CNY75B(G)
VCE=5V Saturated Operation
40
VS=5V
100 RL=1k W
30
toff

20
10

10
ton

1 0
0.1 1 10 100 0 5 10 15 20
95 11045 IF – Forward Current ( mA ) 95 11048 IF – Forward Current ( mA )
Figure 20. Current Transfer Ratio vs. Forward Current Figure 23. Turn on / off Time vs. Forward Current

1000 50
t on / t off – Turn on / Turn off Time ( s )
CTR – Current Transfer Ratio ( % )

CNY75C(G) toff
CNY75C(G) m Saturated Operation
VCE=5V
40 VS=5V
100
RL=1k W
30

20
10

10
ton
1 0
0.1 1 10 100 0 5 10 15 20
95 11046 IF – Forward Current ( mA ) 95 11050 IF – Forward Current ( mA )
Figure 21. Current Transfer Ratio vs. Forward Current Figure 24. Turn on / off Time vs. Forward Current

50 20
t on / t off – Turn on / Turn off Time ( m s )

t on / t off – Turn on / Turn off Time ( s )

m

CNY75A(G) CNY75A(G)
Saturated Operation Non Saturated
40
VS=5V 15 Operation
W VS=5V
W
RL=1k
ton RL=100
30
toff 10

20
toff
5
10
ton

0 0
0 5 10 15 20 0 2 4 6 8 10
95 11033 IF – Forward Current ( mA ) 95 11032 IC – Collector Current ( mA )
Figure 22. Turn on / off Time vs. Forward Current Figure 25. Turn on / off Time vs. Collector Current

Rev. A4, 11–Jan–99 9 (12)

CNY75(G) Series
Vishay Semiconductors

20 20
t on / t off – Turn on / Turn off Time ( m s )

t on / t off – Turn on / Turn off Time ( s )

CNY75B(G) CNY75C(G)

m
Non Saturated Non Saturated
15 Operation 15 Operation
VS=5V VS=5V
RL=100 W ton RL=100 W
10 10

toff
ton
5 5
toff

0 0
0 2 4 6 8 10 0 2 4 6 8 10
95 11047 IC – Collector Current ( mA ) 95 11049 IC – Collector Current ( mA )
Figure 26. Turn on / off Time vs. Collector Current Figure 27. Turn on / off Time vs. Collector Current

Type

XXXXXX
Date
Code
918 A TK 63 Production
Location
(YM)
V
D E
0884 Safety
Logo

15090
Coupling Company
System Logo
Indicator
Figure 28. Marking example

10 (12) Rev. A4, 11–Jan–99

 CNY75(G) Series
Vishay Semiconductors

Dimensions of CNY75G in mm

y
weight: ca. 0.50 g

y
creepage distance: 8 mm
air path: 8 mm

after mounting on PC board

14771

Dimensions of CNY75 in mm

y
weight: 0.50 g

y
creepage distance: 6 mm
air path: 6 mm

after mounting on PC board

14770

Rev. A4, 11–Jan–99 11 (12)

CNY75(G) Series
Vishay Semiconductors

Ozone Depleting Substances Policy Statement

It is the policy of Vishay Semiconductor GmbH to

1. Meet all present and future national and international statutory requirements.

2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.

It is particular concern to control or eliminate releases of those substances into the atmosphere which are known
as ozone depleting substances ( ODSs ).

The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.

Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.

1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively

2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA

3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.

Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.

We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized
application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out
of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or
unauthorized use.

Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423

12 (12) Rev. A4, 11–Jan–99