Semiconductors JEE Main 2024 - 2019 PYQs

Chapter Priority: Priority B MathonGo

Q1. A light emitting diode (LED) is fabricated using GaAs semiconducting material whose band gap is 1.42eV. The
wavelength of light emitted from the LED is : 09 Apr 2024 (M)
(1) 1400 nm (2) 650 nm
(3) 875 nm (4) 1243 nm

Q2. The I − V characteristics of an electronic device shown in the figure. The device is:

09 Apr 2024 (E)

(1) a diode which can be used as a rectifier (2) a zener diode which can be used as a voltage
regulator
(3) a transistor which can be used as an amplifier (4) a solar cell
Q3. In the truth table of the above circuit the value of X and Y are:

09 Apr 2024 (E)

(1) 0,0 (2) 1,1
(3) 1,0 (4) 0,1

Q4. The output Y of following circuit for given inputs is:

08 Apr 2024 (M)

(1) Λ ⋅ B(Λ + B) (2) 0
–
A ⋅ B (3)
A ⋅ B (4)

Q5. A potential divider circuit is connected with a dc source of 20 V , a light emitting diode of
glow in voltage 1.8 V and a zener diode of breakdown voltage of 3.2 V. The length (PR) of
the resistive wire is 20 cm. The minimum length of PQ to just glow the LED is _____cm

08 Apr 2024 (E)

Q6. The correct truth table for the following logic circuit is :
06 Apr 2024 (M)

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Chapter Priority: Priority B MathonGo

(1) A B Y (2) A B Y

0 0 1 0 0 0

0 1 1 0 1 1

1 0 0 1 0 0

1 1 1 1 1 1

(3) A B Y (4) A B Y

0 0 1 0 0 0

0 1 1 0 1 0

1 0 0 1 0 0

1 1 0 1 1 1

Q7. The acceptor level of a p-type semiconductor is 6eV. The maximum wavelength of light which can create a hole
would be : Given hc = 1242eVnm. 06 Apr 2024 (E)
(1) 414 nm (2) 103.5 nm
(3) 207 nm (4) 407 nm

Q8. Following gates section is connected in a complete suitable circuit. For

which of the following combination, bulb will glow (ON):

05 Apr 2024 (M)

(1) A = 0, B = 0, C = 0, D = 1 (2) A = 0, B = 1, C = 1, D = 1

(3) A = 1, B = 0, C = 0, D = 0 (4) A = 1, B = 1, C = 1, D = 0

Q9. The output (Y ) of logic circuit given below is 0 only when:

05 Apr 2024 (E)

(1) A = 1, B = 0 (2) A = 0, B = 1

(3) A = 0, B = 0 (4) A = 1, B = 1

Q10. Identify the logic gate given in the circuit:

04 Apr 2024 (E)

(1) NAND-gate (2) AND gate
(3) NOR gate (4) OR- gate

Q11. The value of net resistance of the network as shown in the given figure is :

04 Apr 2024 (M)

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Semiconductors JEE Main 2024 - 2019 PYQs
Chapter Priority: Priority B MathonGo

(1) 6Ω (2) (5/2)Ω

(3) (15/4)Ω (4) (30/11)Ω

Q12. Which of the diode circuit shows correct biasing used for the measurement of dynamic resistance of p-n
junction diode : 04 Apr 2024 (E)
(1) (2)

(3) (4)

Q13. In the given circuit if the power rating of Zener

diode is 10 mW , the value of series resistance Rs

to regulate the input unregulated supply is:

01 Feb 2024 (M)

(1) 3

7
kΩ (2) 10 Ω
(3) 1 kΩ (4) 10 kΩ

Q14. Conductivity of a photodiode starts changing only if the wavelength of incident light is less than 660 nm. The
band gap of photodiode is found to be ( X

8
) eV. The value of X is:
(Given h = 6. 6 × 10 −34
J s, e = 1. 6 × 10
−19
C )
01 Feb 2024 (E)
(1) 15 (2) 11
(3) 13 (4) 21

Q15. Identify the logic operation performed by the given circuit.

31 Jan 2024 (M)

(1) NAND (2) NOR
(3) OR (4) AND

Q16. The output of the given circuit diagram is

31 Jan 2024 (E)

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Semiconductors JEE Main 2024 - 2019 PYQs
Chapter Priority: Priority B MathonGo

(1) (2)

(3) (4)

Q17. A Zener diode of breakdown voltage 10 V is used as a voltage regulator as shown in the
figure. The current through the Zener diode is

30 Jan 2024 (M)

(1) 50 mA (2) 0
(3) 30 mA (4) 20 mA

Q18. In the given circuit, the voltage across load resistance (R L) is:

30 Jan 2024 (E)

(1) 8. 75 V (2) 9. 00 V

(3) 8. 50 V (4) 14. 00 V

Q19. In the given circuit, the breakdown voltage of the Zener diode is 3. 0 V. What
is the value of I ?
z

29 Jan 2024 (M)

(1) 3. 3 mA (2) 5. 5 mA

(3) 10 mA (4) 7 mA

Q20. The truth table for this given circuit is:

29 Jan 2024 (E)

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Semiconductors JEE Main 2024 - 2019 PYQs
Chapter Priority: Priority B MathonGo

(1) (2)

(3) (4)

Q21. Which of the following circuits is reverse - biased ? 27 Jan 2024 (M)
(1) (2)

(3) (4)

Q22. The truth table of the given circuit diagram is :

27 Jan 2024 (E)

(1) A B Y
(2) A B Y
(3) A B Y
(4) A B Y

0 0 1 0 0 0 0 0 0 0 0 1

0 1 0 0 1 1 0 1 0 0 1 1

1 0 0 1 0 1 1 0 0 1 0 1

1 1 1 1 1 0 1 1 1 1 1 0

Q23. The output from a NAND gate having inputs A and B given below will be,

13 Apr 2023 (E)

(1) (2) (3) (4)

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Semiconductors JEE Main 2024 - 2019 PYQs
Chapter Priority: Priority B MathonGo

Q24. For the following circuit and given inputs A and B, choose the correct option
for output ‵Y ′

13 Apr 2023 (M)

(1) (2)

(3) (4)

Q25*. From the given transfer characteristic of a transistor in CE

configuration, the value of power gain of this configuration is

10 , for
x
RB = 10 kΩ , and RC = 1 kΩ . The value of x is
_____.

13 Apr 2023 (M)

Q26*. In an n-p-n common emitter (CE) transistor the collector current changes from 5 mA to 16 mA for the
change in base current from 100 μA and 200 μA, respectively. The current gain of transistor is _____.
12 Apr 2023 (M)
(1) 110 (2) 210
(3) 0. 9 (4) 9

Q27. The logic performed by the circuit shown in figure is equivalent to

11 Apr 2023 (M)

(1) AND (2) NOR
(3) OR (4) NAND

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Semiconductors JEE Main 2024 - 2019 PYQs
Chapter Priority: Priority B MathonGo

Q28. The logic operations performed by the given digital circuit is equivalent to:

11 Apr 2023 (E)

(1) NOR (2) AND
(3) OR (4) NAND

Q29. A zener diode of power rating 1. 6 W is to be used as voltage regulator.

If the zener diode has a breakdown of 8 V and it has to regulate voltage
fluctuating between 3 V and 10 V The value of resistance Rs for safe
operation of diode will be

10 Apr 2023 (M)

(1) 10 Ω (2) 12 Ω
(3) 13. 3 Ω (4) 13 Ω

Q30. If each diode has a forward bias resistance of 25Ω in the below
circuit. Which of the following options is correct?

10 Apr 2023 (E)

(1) I1

I2
= 1 (2) I2

I3
= 1

(3) I1

I2
= 2 (4) I3

I4
= 1

Q31. For the logic circuit shown, the output waveform at Y is

08 Apr 2023 (M)

(1) (2)

(3) (4)

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Semiconductors JEE Main 2024 - 2019 PYQs
Chapter Priority: Priority B MathonGo

Q32*. For a given transistor amplifier circuit in CE configuration

VCC = 1 V, RC = 1 kΩ, Rb = 100 kΩ and β = 100 . Value of base current
Ib is

08 Apr 2023 (E)

(1) I b = 1. 0 μA (2) I b = 0. 1 μA
(3) I b = 100 μA (4) I b = 10 μA

Q33. The resistivity (ρ) of semiconductor varies with temperature. Which of the following curve represents the
correct behaviour?
06 Apr 2023 (M)
(1) (2)

(3) (4)

Q34. Given below are two statements: one is labelled as Assertion A and the other is labelled as Reason R
Assertion A: Diffusion current in a p − n junction is greater than the drift current in magnitude if the junction
is forward biased.
Reason R: Diffusion current in a p − n junction is form the n-side to the p-side if the junction is forward
biased.
In the light of the above statements, choose the most appropriate answer from the options given below.
06 Apr 2023 (E)
(1) Both A and R are correct but R is NOT the correct explanation of A
(2) A is correct but R is not correct
(3) A is not correct but R is correct
(4) Both A and R is correct and R is the correct explanation of A

Q35. Name the logic gate equivalent to the diagram attached

06 Apr 2023 (M)

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Semiconductors JEE Main 2024 - 2019 PYQs
Chapter Priority: Priority B MathonGo

(1) NAND (2) AND (3) NOR (4) OR

Q36. Match the List I with List II
List I List II
A Intrinsic Semiconductor I Fermi-level near valence band
B n-type semiconductor II Fermi-level at middle of valence and conduction band
C p-type semiconductor III Fermi-level near conduction band
D Metals IV Fermi-level inside conduction band
Choose the correct answer from the options given below:
01 Feb 2023 (M)
(1) (A) → I, (B) → II, (C) → III, (D) → IV (2) (A) → II, (B) → I, (C) → III, (D) → IV
(3) (A) → II, (B) → III, (C) → I, (D) → IV (4) (A) → III, (B) → I, (C) → II, (D) → IV

Q37. Choose the correct statement about Zener diode: 01 Feb 2023 (E)
(1) It works as a voltage regulator in reverse bias and behaves like simple p-n junction diode in forward bias
(2) It works as a voltage regulator in both forward and reverse bias
(3) It works a voltage regulator only in forward bias
(4) It works as a voltage regulator in forward bias and behaves like simple p-n junction diode in reverse bias

Q38. The effect of increase in temperature on the number of electrons in conduction band (n ) and resistance of a
e

semiconductor will be as: 31 Jan 2023 (M)

(1) Both n and resistance decrease
e (2) Both n and resistance increase
e

(3) n increases, resistance decreases

e (4) n decreases, resistance increases
e

Q39*. Given below are two statements:

Statement I : In a typical transistor, all three regions emitter, base and collector have same doping level.
Statement II : in a transistor, collector is the thickest and base is the thinnest segment.
In the light of the above statements, choose the most appropriate answer from the options given below.
31 Jan 2023 (E)
(1) Both Statement I and Statement II are correct (2) Both Statement I and Statement II are incorrect
(3) Statement I is incorrect but Statement II is (4) Statement I is correct but Statement II is
correct incorrect

Q40. The output waveform of the given logical circuit for the following inputs A and B as
shown below, is

30 Jan 2023 (M)

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 (3)

(1)

(3)

⎢⎥
Semiconductors
Chapter Priority: Priority B

(1)

Q41. The output Y for the inputs A and B of circuit is given by

Truth table of the shown circuit is :

⎣
A

A
0

1
B

1
Y

1
⎤

B. It emits light only when it is forward biased.

C. It emits light only when it is reverse biased.
(2)

(4)

(2) ⎡A

(4) ⎡A
⎣

⎣
0

1
B

1
Y

0
⎤

Q42. Which of the following statement is not correct in the case of light emitting diodes?
A. It is a heavily doped p-n junction.
JEE Main 2024 - 2019 PYQs
MathonGo

30 Jan 2023 (E)

D. The energy of the light emitted is equal to or slightly less than the energy gap of the semiconductor used.
Choose the correct answer from the options given below :

(1) C and D
(3) C
(2) A
(4) B

Q43. For the given logic gates combination, the correct truth table will be

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29 Jan 2023 (M)

29 Jan 2023 (E)

10
Semiconductors JEE Main 2024 - 2019 PYQs
Chapter Priority: Priority B MathonGo

(1) A B X (2) A B X
0 0 1 0 0 0
0 1 0 0 1 1
1 0 0 1 0 1
1 1 0 1 1 0
(3) A B X (4) A B X
0 0 1 0 0 0
0 1 0 0 1 1
1 0 1 1 0 1
1 1 0 1 1 1

Q44. Statement I : When a Si sample is doped with Boron, it becomes P type and when doped by Arsenic it
becomes N-type semi conductor such that P-type has excess holes and N-type has excess electrons.
Statement II : When such P-type and N-type semi-conductors, are fused to make a junction, a current will
automatically flow which can be detected with an externally connected ammeter.
In the light of above statements, choose the most appropriate answer from the options given below.
25 Jan 2023 (E)
(1) Both Statement I and statement II are incorrect (2) Statement I is incorrect but statement II is correct
(3) Both Statement I and statement II are correct (4) Statement I is correct but statement II is incorrect

Q45. Given below are two statements : one is labelled as Assertion A and the other is labelled as Reason R
Assertion A: Photodiodes are used in forward bias usually for measuring the light intensity.
Reason R: For a p − n junction diode, at applied voltage V the current in the forward bias is more than the
current in the reverse bias for |Vz| > ±V ≥ |V0| where V0 is the threshold voltage and Vz is the breakdown
voltage.
In the light of the above statements, choose the correct answer from the options given below
25 Jan 2023 (M)
(1) Both A and R are true and R is correct explanation A
(2) Both A and R are true but R is NOT the correct explanation A
(3) A is false but R is true
(4) A is true but R is false

Q46. Given below are two statements: one is labelled as Assertion A and the other is labelled as Reason R.
Assertion A: Photodiodes are preferably operated in reverse bias condition for light intensity measurement.
Reason R: The current in the forward bias is more than the current in the reverse bias for a p − n junction
diode.
In the light of the above statement, choose the correct answer from the options given below :
24 Jan 2023 (M)

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(1) A is false but R is true

(2) Both A and R are true but R is NOT the correct explanation of A
(3) A is true but R is false
(4) Both A and R are true and R is the correct explanation of A
Q47. The logic gate equivalent to the given circuit diagram is :

24 Jan 2023 (E)

(1) OR (2) NAND
(3) NOR (4) AND

Q48. If the potential barrier across a p − n junction is 0. 6 V. Then the electric field intensity, in the depletion region
having the width of 6 × 10 −6
, will be _____ ×10
m
5
N C
−1
29 Jul 2022 (M)

Q49. A 8V Zener diode along with a series resistance R is connected across a 20 V supply
(as shown in the figure). If the maximum Zener current is 25 mA , then the minimum
value of R will be _____ Ω.

29 Jul 2022 (E)

Q50. Identify the solar cell characteristics from the following options : 28 Jul 2022 (M)
(1) (2)

(3) (4)

Q51*. An n.p.n transistor with current gain β = 100 in common emitter configuration
is shown in figure. The output voltage of the amplifier will be

28 Jul 2022 (E)

(1) 0. 1 V (2) 1. 0 V
(3) 10 V (4) 100 V

Q52. A logic gate circuit has two inputs A and B and output Y . The voltage waveforms of A, B and Y are shown
below. The logic gate circuit is
img src="images/e9c504d7-1da4-4703-aa00-baf2dbe5341b-image.png" style="width: 250px; height:
150px;"/> 27 Jul 2022 (M)

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Semiconductors JEE Main 2024 - 2019 PYQs
Chapter Priority: Priority B MathonGo

(1) AND gate (2) OR gate

(3) NOR gate (4) NAND gate

Q53*. For a constant collector-emitter voltage of 8 V, the collector current of a transistor reached to the value of
6 mA from 4 mA , whereas base current changed from 20 μA to 25 μA value. If transistor is in active state,
small signal current gain (current amplification factor) will be 27 Jul 2022 (E)
(1) 240 (2) 400
(3) 0. 0025 (4) 200

Q54*. The typical transfer characteristic of a transistor in CE configuration is shown in

figure. A load resistor of 2 kΩ is connected in the collector branch of the circuit
used. The input resistance of the transistor is 0. 50 kΩ . The voltage gain of the
transistor is

26 Jul 2022 (E)

Q55. In the circuit shown below, maximum Zener diode current will be _____ mA.

26 Jul 2022 (M)

Q56. The energy band gap of semiconducting material to produce violet (wavelength = 4000Å) LED is _____ eV.
(Round off to the nearest integer). 25 Jul 2022 (M)

Q57. Two ideal diodes are connected in the network as shown in figure. The equivalent
resistance between A and B is _____ Ω.

25 Jul 2022 (E)

Q58. In the circuit, the logical value of A = 1 or B = 1 when potential at A or B is 5 V and the
logical value of A = 0 or B = 0 when potential at A or B is 0V . The truth table of the
given circuit will be:

25 Jul 2022 (M)

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Chapter Priority: Priority B MathonGo

(1) A B Y
(2) A B Y

0 0 0 0 0 0

1 0 0 1 0 1

0 1 0 0 1 1

1 1 1 1 1 1

(3) A B Y (4) A B Y

0 0 0 0 0 1

1 0 0 1 0 1

0 1 0 0 1 1

1 1 0 1 1 0

Q59*. A transistor is used in an amplifier circuit in common emitter mode. If the base current changes by 100 μA, it
brings a change of 10 mA in collector current. If the load resistance is 2 kΩ and input resistance is 1 kΩ, the
value of power gain is x × 10 . The value of x is _____ .
4
29 Jun 2022 (M)

Q60. A potential barrier of 0. 4 V exists across a p-n junction. An electron enters the junction from the n-side with a
speed of 6. 0 × 10 5 −1
m s . The speed with which electron enters the p side will be x

3
× 10
5
m s
−1
, then the
value of x is _____.: (Given mass of electron = 9 × 10 −31
, charge on electron = 1. 6 × 10
kg
−19
C .)
29 Jun 2022 (E)

Q61*. Given below are two statements : One is labelled as Assertion A and the other is labelled as Reason R.
Assertion A : n − p − n transistor permits more current than a p − n − p transistor.
Reason R : Electrons have greater mobility as a charge carrier.
28 Jun 2022 (M)
(1) Both A and R true, and R is correct explanation of A.
(2) Both A and R are true but R is NOT the correct explanation of A.
(3) A is true but R is false.
(4) A is false but R is true.

Q62. For using a multimeter to identify diode from electrical components, choose the correct statement out of the
following about the diode 28 Jun 2022 (M)
(1) It is two terminal device which conducts current in both directions.
(2) It is two terminal device which conducts current in one direction only
(3) It does not conduct current gives an initial deflection which decays to zero.
(4) It is three terminal device which conducts current in one direction only between central terminal and either
of the remaining two terminals

Q63. In the given circuit the input voltage Vin is shown in

figure. The cut-in voltage of p − n junction diode (D 1

or D ) is 0. 6 V. Which of the following output voltage

2

(V0) waveform across the diode is correct?

28 Jun 2022 (E)

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Chapter Priority: Priority B MathonGo

(1) (2)

(3) (4)

Q64. A Zener of breakdown voltage VZ = 8 V and maximum

Zener current, IZM = 10 mA is subjected to an input voltage
Vi = 10 V with series resistance R = 100 Ω . In the given
circuit R represents the variable load resistance. The ratio of
L

maximum and minimum value of R is _____.

L

28 Jun 2022 (E)

Q65. In the following circuit, the correct relation between output (Y ) and
inputs A and B will be

28 Jun 2022 (M)

(1) Y = A ⋅ B (2) Y = A + B

(3) Y = A ⋅ B (4) Y = A + B

Q66. The cut-off voltage of the diodes (shown in figure) in forward bias is 0. 6 V . The
current through the resister of 40Ω is _____ mA.

27 Jun 2022 (E)

Q67. Identify the correct Logic Gate for the following output (Y ) of two inputs A

and B.

27 Jun 2022 (M)

(1) (2)

(3) (4)

Q68*. For a transistor to act as a switch, it must be operated in 27 Jun 2022 (E)
(1) Active region (2) Saturation and cut-off region
(3) Cutoff region only (4) Saturated region only

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Q69*. The positive feedback is required by an amplifier to act as an oscillator. The feedback here means
26 Jun 2022 (E)
(1) External input is necessary to sustain ac signal in output.
(2) A portion of the output power is returned back to the input.
(3) Feedback can be achieved by LR network.
(4) The base-collector junction must be forward biased.

Q70. The I − V characteristics of a p − n junction diode in forward bias is

shown in the figure. The ratio of dynamic resistance, corresponding to
forward bias voltage of 2 V and 4 V respective is

26 Jun 2022 (M)

(1) 1 : 2 (2) 5 : 1
(3) 1 : 40 (4) 20 : 1

Q71. As per the given circuit, the value of current through the battery will be _____ A.

26 Jun 2022 (M)

Q72*. In an experiment of CE configuration of n − p − n transistor, the transfer

characteristics are observed as given in figure. If the input resistance is 200Ω and
output resistance is 60Ω, the voltage gain in this experiment will be _____.

25 Jun 2022 (E)

Q73. The photodiode is used to detect the optical signals. These diodes are preferably operated in reverse biased
mode because 25 Jun 2022 (M)
(1) fractional change in majority carriers produce higher forward bias current
(2) fractional change in majority carriers produce higher reverse bias current
(3) fractional change in minority carriers produce higher forward bias current
(4) fractional change in minority carriers produce higher reverse bias current

Q74. Identify the logic operation performed by the given circuit

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25 Jun 2022 (E)

(1) AND gate (2) OR gate
(3) NOR gate (4) NAND gate

Q75. In the given circuit, the value of current IL will be _____ mA. (When
RL = 1 kΩ )

24 Jun 2022 (E)

Q76*. A transistor is used in common-emitter mode in an amplifier circuit. When a signal of 10 mV is added to the
base-emitter voltage, the base current changes by 10μA and the collector current changes by 1. 5 mA . The
load resistance is 5kΩ. The voltage gain of the transistor will be _____ . 24 Jun 2022 (M)

Q77. In the given figure, each diode has a forward bias resistance of 30 Ω and infinite
resistance in reverse bias. The current I will be :
1

01 Sep 2021 (E)

(1) 2. 0 A (2) 3. 75 A
(3) 2. 73 A (4) 2. 35 A

Q78. Statement I : To get a steady DC output from the pulsating voltage received from a full wave rectifier we can
connect a capacitor across the output parallel to the load R L.

Statement II : To get a steady DC output from the pulsating voltage received from a full wave rectifier we can
connect an inductor in series with R L.

In the light of the above statements, choose the most appropriate answer from the options given below :
31 Aug 2021 (E)
(1) Both Statement I and Statement II are false (2) Both Statement I and Statement II are true
(3) Statement I is false but Statement II is true (4) Statement I is true but Statement II is false

Q79. In the following logic circuit the sequence of the inputs A, B are
(0, 0), (0, 1), (1, 0) and (1, 1). The output Y for this sequence will be :

31 Aug 2021 (M)

(1) 0, 1, 0, 1 (2) 0, 0, 1, 1
(3) 1, 1, 1, 0 (4) 1, 0, 1, 0

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Q80. Choose the correct waveform that can represent the voltage across R of the
following circuit, assuming the diode is ideal one:

31 Aug 2021 (M)

(1) (2)

(3) (4)

Q81. If VA and VB are the input voltages (either 5 V or 0 V ) and V0 is the output voltage then the two gates
represented in the following circuits (A) and (B) are :
31 Aug 2021 (E)

(1) OR and NOT Gate (2) AND and NOT Gate

(3) AND and OR Gate (4) NAND and NOR Gate

Q82*. For a transistor in CE mode to be used as an amplifier, it must be operated in: 27 Aug 2021 (M)
(1) Cut-off region only (2) Saturation region only
(3) The active region only (4) Both cut-off and Saturation

Q83. A zener diode of power rating 2 W is to be used as a voltage regulator.

If the zener diode has a breakdown of 10 V and it has to regulate voltage
fluctuated between 6 V and 14 V , the value of Rs for safe operation
should be _____ Ω .

27 Aug 2021 (E)

Q84*. For a transistor α and β are given as α = IC

IE
and β = IC

IB
. Then the correct relation between α and β will be:
27 Aug 2021 (E)
(1) α = (2) αβ = 1
1−β

(3) β = (4) α =
α β

1−α 1−β

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Q85. A circuit is arranged as shown in figure. The output voltage Vo is equal to

__________ V.

27 Aug 2021 (M)

Q86. Statement I: By doping silicon semiconductors with pentavalent material, the electrons density increases.
Statement II: The n−type of semiconductor has a net negative charge.
In the above statements, choose the most appropriate answer from the options given below:
26 Aug 2021 (M)
(1) Both Statement I and Statement II are false. (2) Statement I is true but Statement II is false.
(3) Statement I is false but Statement II is true. (4) Both Statement I and Statement II are true.

Q87. For the given circuit, the power across zener diode is _____ mW.

26 Aug 2021 (E)

Q88. Identify the logic operation carried out by the given circuit:

26 Aug 2021 (M)

(1) OR (2) AND
(3) NAND (4) NOR

Q89. Four NOR gates are connected as shown in figure. The truth table for the
given figure is :

26 Aug 2021 (E)

(1) A B Y (2) A B Y

0 0 1 0 0 0

0 1 0 0 1 1

1 0 1 1 0 1

1 1 0 1 1 0

(3) A B Y
(4) A B Y

0 0 1 0 0 0

0 1 0 0 1 1

1 0 0 1 0 0

1 1 1 1 1 1

Q90. Find the truth table for the function Y of A and B represented in the following
figure.

27 Jul 2021 (E)

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(1) A B Y (2) A B Y

0 0 0 0 0 1

0 1 1 0 1 0

1 0 0 1 0 1

1 1 0 1 1 1

(3) A B Y (4) A B Y

0 0 0 0 0 0

0 1 0 0 1 1

1 0 0 1 0 1

1 1 1 1 1 1

Q91*. A transistor is connected in common emitter circuit configuration, the collector supply voltage is 10 V and
the voltage drop across a resistor of 1000 Ω in the collector circuit is 0. 6 V. If the current gain factor (β) is
24, then the base current is ____μA. (Round off to the Nearest Integer) 27 Jul 2021 (M)

Q92. In a semiconductor, the number density of intrinsic charge carriers at 27°C is 1. 5 × 10 16

m
−3
. If the
semiconductor is doped with an impurity atom, the hole density increases to 4. 5 × 10 22
m
−3
. The electron
density in the doped semiconductor is _______×10 9
m
−3
25 Jul 2021 (E)

Q93. Identify the logic operation carried out.

25 Jul 2021 (M)

(1) OR (2) AND
(3) NOR (4) NAND

Q94. Consider a situation in which reverse biased current of a particular P − N junction increases when it is
exposed to a light of wavelength ≤ 621 nm. During this process, enhancement in carrier concentration takes
place due to generation of hole-electron pairs. The value of band gap is nearly. 22 Jul 2021 (M)
(1) 2 eV (2) 4 eV

(3) 1 eV (4) 0. 5 eV

Q95. In a given circuit diagram, a 5 V zener diode along with a series

resistance is connected across a 50 V power supply. The minimum
value of the resistance required, if the maximum zener current is
90 mA will be Ω.

22 Jul 2021 (M)

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Q96. For the forward biased diode characteristics shown in the figure,
the dynamic resistance at I D = 3 mA will be ________Ω.

20 Jul 2021 (E)

Q97. For the circuit shown below, calculate the value of I z :

20 Jul 2021 (M)

(1) 25 mA (2) 0. 15 A
(3) 0. 1 A (4) 0. 05 A

Q98. A zener diode having zener voltage 8 V and power dissipation rating of 0. 5 W is
connected across a potential divider arranged with maximum potential drop across zener
diode is as shown in the diagram. The value of protective resistance R is _____Ω.p

20 Jul 2021 (E)

Q99*. An npn transistor operates as a common emitter amplifier with a power gain of 10 . The input circuit
6

resistance is 100 Ω and the output load resistance is 10 kΩ. The common emitter
current gain β will be (Round off to the Nearest Integer) 18 Mar 2021 (M)

Q100*. The correct relation between α (ratio of collector current to emitter current) and β (ratio of collector current
to base current) of a transistor is : 18 Mar 2021 (E)
(1) β = α

1+α
(2) α = β

1−α

(3) β = (4) α =
1 β

1−α 1+β

Q101*. The typical output characteristics curve for a transistor working in the
common-emitter configuration is shown in the figure. The estimated
current gain from the figure is

18 Mar 2021 (E)

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Q102. The output of the given combination gates represents:

17 Mar 2021 (M)

(1) XOR Gate (2) NAND Gate
(3) AND Gate (4) NOR Gate

Q103. Which one of the following will be the output of the given circuit?

17 Mar 2021 (E)

(1) NOR Gate (2) NAND Gate
(3) AND Gate (4) XOR Gate

Q104. The value of power dissipated across the zener diode (Vz = 15 V) connected in
the circuit as shown in the figure is x × 10
−1
W . The value of x to the nearest
integer is _______.

16 Mar 2021 (M)

Q105. In the logic circuit shown in the figure, if input A and B are 0 to 1 respectively,
the output at Y would be x. The value of x is _________.

16 Mar 2021 (M)

Q106. The following logic gate is equivalent to:

16 Mar 2021 (E)

(1) NOR Gate (2) OR Gate
(3) AND Gate (4) NAND Gate

Q107. LED is constructed from Ga − As − P semiconducting material. The energy gap of this LED is 1. 9 eV .
Calculate the wavelength of light emitted and its colour. h = 6. 63 × 10 −34
J − s and c = 3 × 10 8 −1
m s

26 Feb 2021 (M)

(1) 654 nm and red colour (2) 654 nm and orange colour
(3) 1046 nm and red colour (4) 1046 nm and blue colour

Q108. The circuit contains two diodes each with a forward resistance of 50 Ω and with infinite
reverse resistance. If the battery voltage is 6 V , the current through the 120 Ω resistance
is _______ mA

26 Feb 2021 (M)

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Chapter Priority: Priority B MathonGo

Q109. Draw the output signal Y in the given combination of gates.

26 Feb 2021 (E)

(1) (2)

(3) (4)

Q110. The zener diode has a Vz = 30 V . The current passing through the diode
for the following circuit is___mA.

26 Feb 2021 (E)

Q111. For extrinsic semiconductors; when doping level is increased; 25 Feb 2021 (E)
(1) Fermi-level of p and n- type semiconductors will not be affected.
(2) Fermi-level of p-type semiconductor will go upward and Fermi-level of n-type semiconductors will go
downward.
(3) Fermi-level of both p-type and n-type semiconductors will go upward for T > TF K and downward for
T < TF K, where T is Fermi temperature.
F

(4) Fermi-level of p- type semiconductors will go downward and Fermi-level of n- type semiconductor will
go upward.

Q112. A 5 V battery is connected across the points X and Y . Assume D1 and D2 to be normal
silicon diodes. Find the current supplied by the battery if the +ve terminal of the battery is
connected to point X.

25 Feb 2021 (M)

(1) ~0. 86 A (2) ~0. 5 A
(3) ~1. 5 A (4) ~0. 43 A

Q113. The truth table for the following logic circuit is :

25 Feb 2021 (E)

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(1) (2)

(3) (4)

Q114. In connection with the circuit drawn below, the value of current flowing through
2 kΩ resistor is______×10 −4
A.

24 Feb 2021 (M)

Q115. Zener breakdown occurs in a p − n junction having pand n both: 24 Feb 2021 (E)
(1) lightly doped and have narrow depletion layer. (2) heavily doped and have wide depletion layer.
(3) lightly doped and have wide depletion layer. (4) heavily doped and have narrow depletion layer.

Q116*. If an emitter current is changed by 4 mA , the collector current changes by 3. 5 mA . The value of β will be:
24 Feb 2021 (M)
(1) 3.5 (2) 0.5
(3) 0.875 (4) 7

Q117. Given below are two statements:

Statement I : p − n junction diodes can be used to function as a transistor, simply by connecting two diodes,
back to back, which acts as the base terminal
Statement II: In the study of transistors, the amplification factor β indicates ratio of the collector current to
the base current.
In the light of the above statements, choose the correct answer from the options given below.
24 Feb 2021 (E)
(1) Both Statement I and Statement II are false (2) Statement I is true but Statement II is false
(3) Statement I is false but Statement II is true (4) Both Statement I and Statement II are true

Q118. The logic circuit shown above is equivalent to :

24 Feb 2021 (E)

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Chapter Priority: Priority B MathonGo

(1) (2)

(3) (4)

Q119. Identify the correct output signal Y in the given combination of gates (as shown n) for
the given inputs A and B

06 Sep 2020 (M)

(1) (2)

(3) (4)

Q120*. The output characteristics of a transistor is shown in the

figure. When VCE is 10V and IC = 4 .0 mA , then value of
β is
ac

06 Sep 2020 (E)

Q121. With increasing biasing voltage of a photo diode, the photocurrent magnitude: 05 Sep 2020 (M)
(1) remains constant
(2) increases initially and after attaining certain value, it decreases
(3) increases linearly
(4) increases initially and saturates finally

Q122. Two Zener diodes (A and B) having breakdown voltages of 6 V and 4 V respectively, are connected as
shown in the circuit below. The output voltage V variation with input voltage linearly increasing with time, is
0

given by (V input = 0V at t = )
0

05 Sep 2020 (E)

(1) (2)

(3) (4)

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Semiconductors JEE Main 2024 - 2019 PYQs
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Q123. Identify the operation performed by the circuit given below :

04 Sep 2020 (E)

(1) NAND (2) OR
(3) AND (4) NOT

Q124. Take the breakdown voltage of the zener diode used in

the given circuit as 6V . For the input voltage shown in
the figure below, the time variation of the output
voltage is: (Graphs drawn are schematic and not to the
scale)
04 Sep 2020 (M)
(1) (2)

(3) (4)

Q125. If a semiconductor photo diode can detect a photon with a maximum wavelength of 400 , then its
nm

band gap energy is: Planck's constant h = 6. 63 × 10 −34

J. s

Speed of light c = 3 × 10 8 −1
m s 03 Sep 2020 (E)
(1) 1. 1 eV (2) 2. 0 eV

(3) 1. 5 eV (4) 3. 1 eV

Q126. When a diode is forward biased, it has a voltage drop of 0. 5 V . the safe limit of current through the diode is
10 mA . If a battery of emf 1. 5 V is used in the circuit, the value of minimum resistance to be connected in
series with the diode so that the current does not exceed the safe limit is : 03 Sep 2020 (M)
(1) 300 Ω (2) 50 Ω
(3) 100 Ω (4) 200 Ω

Q127. In the following, digital circuit, what will be the output a 'Z', when the input (A, B)

are (1, 0), (0, 0), (1, 1), (0, 1)

02 Sep 2020 (E)

(1) 0, 0, 1, 0 (2) 1, 0, 1, 1
(3) 1, 1, 0, 1 (4) 0, 1, 0, 0

Q128. The current i in the network is

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09 Jan 2020 (E)

(1) 0.2 A (2) 0.6 A
(3) 0.3 A (4) 0 A

Q129. Both the diodes used in the circuit shown are assumed to be ideal and have
negligible resistance when these are forward biased. Built in potential in each
diode is 0.7V . For the input voltages shown in the figure, the voltage (in
Volts) at point A is ________

09 Jan 2020 (M)

Q130. In the circuit shown below, is working as a 8 V dc regulated voltage source. When
12 V is used as an input, the power dissipated (in mW ) in each diode is
(Considering both zener diodes are identical)

09 Jan 2020 (E)

Q131. Boolean relation at the output stage- Y for the following circuit is:

08 Jan 2020 (M)

(1) − −
(2) A + B
A + B

(3) A ∙ B (4) − −
A ∙ B

Q132. In the given circuit, value of Y is:

08 Jan 2020 (E)

(1) 0 (2) toggles between 0 and 1
(3) will not execute (4) 1

Q133. Which of the following gives a reversible operation? 07 Jan 2020 (M)
(1) (2)

(3) (4)

Q134. In the figure, potential difference between A and B is:

07 Jan 2020 (E)

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 (3)

∣∣
Semiconductors
Chapter Priority: Priority B

(1) 10 V
(3) 15 V

Q135. The truth table for the circuit given in the figure is:

(1) A

Q136. Figure shows a

voltage

(1) 1.5 mA
(3) 7.5 mA

(1) 5 × 10
(3) 5 × 10

resistance is

(1) 6 × 10
(3) 10 4
B

= 6 V
Y

4
DC
(2) 5 V
(4) 0 V

(2)

(4)

. If the unregulated input voltage varies between

what is the maximum Zener current?

resistance 100 Ω and

, 2.5 × 10

4
, 5 × 10

2
100 Ω
6
6
100 kΩ

voltage and power gain, are respectively:

and the output load resistance is

A

(2) 3.5 mA
(4) 2.5 mA

Q137*. The transfer characteristic curve of a transistor, having input and output

(2) 2.5 × 10
(4) 5 × 10

Q138*. An NPN transistor operates as a common emitter amplifier, with a power gain of
10 kΩ

(2) 10
(4) 60
2
B

1
1

4
Y

voltage regulator circuit, with a Zener diode of breakdown

10 V

respectively, is shown in the figure. The

, 5 × 10
to 16 V,

, 2.5 × 10

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6
JEE Main 2024 - 2019 PYQs

then

60 dB

. The common emitter current gain β is:

MathonGo

12 Apr 2019 (M)

12 Apr 2019 (E)

12 Apr 2019 (M)

. The input circuit

10 Apr 2019 (M)

28
Semiconductors JEE Main 2024 - 2019 PYQs
Chapter Priority: Priority B MathonGo

Q139. The figure represents a voltage regulator circuit using a Zener diode. The
breakdown voltage of the Zener diode is 6 V and the load resistance is,
RL = 4 kΩ . The series resistance of the circuit is Ri = 1 kΩ . If the battery
voltage VB varies from 8 V to 16 V , what are the minimum and maximum
values of the current through Zener diode?
10 Apr 2019 (E)
(1) 0.5 mA; 6 mA (2) 1 mA; 8.5 mA

(3) 0.5 mA; 8.5 mA (4) 1.5 mA; 8.5 mA

Q140. The logic gate equivalent to the given logic circuit is:

09 Apr 2019 (E)

(1) NAND (2) AND
(3) NOR (4) OR

Q141*. An NPN transistor is used in common emitter configuration as an amplifier with 1 kΩ load resistance.
Signal voltage of 10 mV is applied across the base-emitter. This produces a 3 mA change in the collector
current and 15 μA change in the base current of the amplifier. The input resistance and voltage gain are:
09 Apr 2019 (M)
(1) 0.33 kΩ, 1.5 (2) 0.67 kΩ, 300

(3) 0.67 kΩ, 200 (4) 0.33 k Ω, 300

Q142. The reverse break down voltage of a Zener diode is 5.6 V in the given circuit. The
current I through the Zener is:
z

08 Apr 2019 (M)

(1) 10 mA (2) 7 mA

(3) 17 mA (4) 15 mA

Q143*. A common emitter amplifier circuit, built using an NPN transistor, is shown in
the figure. Its dc current gain is 250 , RC = 1 kΩ and VCC = 10 V . The
minimum base current for V CE
to reach saturation is

08 Apr 2019 (E)

(1) 10 μA (2) 40 μA
(3) 7 μA (4) 100 μA

Q144. The output of the given logic circuit is:

12 Jan 2019 (M)

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(1) −
(2) −
AB AB

¯
(3) AB + AB (4) − −
AB + A B

Q145*. In the figure, given that VBB supply can vary from 0 to
5.0 V , VCC = 5 V , βdc = 200, RB = 100 kΩ, RC = 1 kΩ and
VBE = 1.0V. The minimum base current and the input voltage at
which the transistor will go to saturation, will be, respectively:

12 Jan 2019 (E)

(1) 25 μA and 2.8 V (2) 20μA and 2.8V
(3) 25μA and 3.5V (4) 20μA and 3.5V

Q146. In the given circuit the current through Zener Diode is

close to:

11 Jan 2019 (M)

(1) 0.0 mA (2) 6.7 mA
(3) 4.0 mA (4) 6.0 mA

Q147. The circuit shown below contains two ideal diodes, each with a
forward resistance of 50Ω . If the battery voltage is 6 V, the
current through the 100Ω resistance (in Amperes) is:

11 Jan 2019 (E)

(1) 0.036 (2) 0.02
(3) 0.027 (4) 0.03

Q148. For the circuit shown below, the current through the Zener diode is

10 Jan 2019 (E)

(1) zero. (2) 5 mA .
(3) 9 mA . (4) 14 mA .

Q149. To get output '1' at R, for the given logic gate circuit the input values must be:

10 Jan 2019 (M)

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(1) X = 1, Y = 1 (2) X = 0, Y = 0

(3) X = 0, Y = 1 (4) X = 1, Y = 0

Q150. Ge and Si diodes start conducting at 0.3 V and 0.7 V respectively. In the
following figure if Ge diode connection are reversed, the value of V0

changes by: (assume that the Ge diode has large breakdown voltage)

09 Jan 2019 (E)

(1) 0.8 V (2) 0.4 V
(3) 0.2 V (4) 0.6 V

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ANSWER KEYS
1. (3) 2. (2) 3. (2) 4. (2) 5. (5) 6. (1) 7. (3) 8. (3)
9. (3) 10. (4) 11. (1) 12. (3) 13. (1) 14. (1) 15. (3) 16. (3)
17. (3) 18. (1) 19. (2) 20. (2) 21. (4) 22. (2) 23. (2) 24. (1)
25. (3) 26. (1) 27. (1) 28. (2) 29. (1) 30. (3) 31. (1) 32. (4)
33. (3) 34. (2) 35. (3) 36. (3) 37. (1) 38. (3) 39. (3) 40. (4)
41. (4) 42. (3) 43. (2) 44. (4) 45. (3) 46. (2) 47. (2) 48. (1)
49. (480) 50. (2) 51. (2) 52. (1) 53. (2) 54. (200) 55. (9) 56. (3)
57. (25) 58. (1) 59. (2) 60. (14) 61. (1) 62. (2) 63. (4) 64. (2)
65. (3) 66. (4) 67. (2) 68. (2) 69. (2) 70. (2) 71. (1) 72. (15)
73. (4) 74. (1) 75. (5) 76. (750) 77. (1) 78. (2) 79. (3) 80. (1)
81. (1) 82. (3) 83. (20) 84. (3) 85. (5) 86. (2) 87. (120) 88. (4)
89. (3) 90. (2) 91. (25) 92. (5) 93. (2) 94. (1) 95. (500) 96. (25)
97. (1) 98. (192) 99. (100) 100. (4) 101. (200) 102. (2) 103. (4) 104. (5)
105. (0) 106. (1) 107. (1) 108. (20) 109. (1) 110. (9) 111. (4) 112. (4)
113. (1) 114. (25) 115. (4) 116. (4) 117. (3) 118. (3) 119. (4) 120. (150)
121. (4) 122. (3) 123. (3) 124. (3) 125. (4) 126. (3) 127. (1) 128. (3)
129. (12) 130. (40) 131. (4) 132. (1) 133. (4) 134. (1) 135. (4) 136. (2)
137. (1) 138. (2) 139. (3) 140. (4) 141. (2) 142. (1) 143. (2) 144. (1)
145. (3) 146. (1) 147. (2) 148. (3) 149. (4) 150. (2)

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