B30H40G thru B30H200G
B30H40G thru B30H200G Pb
Pb Free Plating Product
30 Ampere Insulated Dual Common Cathode Schottky Barrier Rectifier Diode
ITO-220AB/TO-220F-3L Unit:mm
FEATURES
• Plastic package has Underwriters Laboratory .406(10.3) .189(4.8)
.100(2.55)
.112(2.85)
.165(4.2)
.272(6.9)
.248(6.3)
.381(9.7)
Flammability Classification 94V-O. .134(3.4)
.130(3.3)
.118(3.0)
.114(2.9)
Flame Retardant Epoxy Molding Compound.
• Metal silicon junction, majority carrier conduction
.606(15.4)
.583(14.8)
• Low power loss, high efficiency.
• High current capability
• Guardring for overvoltage protection
• For use in low voltage,high frequency inverters .114(2.9)
.098(2.5)
.071(1.8)
.512(13.0)
.543(13.8)
.161(4.1)MAX
.055(1.4)
free wheeling , and polarlity protection applications. .055(1.4)
.032(.8)
.039(1.0)
• In compliance with EU RoHS 2002/95/EC directives .035(0.9)
MAX
.011(0.3)
.1 .1
MECHANICAL DATA (2.55) (2.55)
• Case: ITO-220AB/TO-220F-3L Insulated Pkg
• Terminals: solder plated, solderable per MIL-STD-750, Method 2026
• Polarity: As marked. Case Case Case Case
• Mounting Position: Any Positive Negative Doubler Series
Common Cathode Common Anode Tandem Polarity Tandem Polarity
• Weight: 2.2 gram approximately.
Suffix "G" Suffix "GA" Suffix "GD" Suffix "GS"
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
PA RA ME TE R S YMB OL B30H40G B30H45G B30H50G B30H60G B30H80G B30H90G B30H100G B30H150G B30H200G UNITS
Ma xi mum Re curre nt P e ak Re ve rse Voltag e V RRM 40 45 50 60 80 90 1 00 15 0 2 00 V
Ma xi mum RMS Vo lta g e V RMS 28 31 .5 35 42 56 63 70 10 5 140 V
Ma xi mum D C B lo cki ng Vo lta ge V DC 40 45 50 60 80 90 1 00 15 0 2 00 V
Ma xi mum A vera g e F o rwa rd C urre nt I F(AV) 30 A
P e ak Fo rward S urg e C urre nt ： 8.3 ms si ng le
ha lf si ne-wa ve sup e ri mp o se d o n ra te d lo a d I FS M 275 A
(JE D E C metho d )
Ma xi mum F o rwa rd Vo lta ge at 1 5A p e r leg VF 0.7 0.75 0.85 0.90 0.95 V
Ma xi mum D C Re ve rse C urrent T J =25 ℃ 0.1
IR mA
at Ra te d D C B lo cki ng Voltag e T J =12 5 ℃ 20
Typ i cal Therma l Resi sta nce R JC 3.0 ℃
Op erati ng Juncti o n a nd S to ra ge Te mp e ra ture
Ra ng e
T J ,T STG -5 5 to + 1 50 -6 5 to + 1 75 ℃
Note :
Both Bonding and Chip structure are available.
Rev.10T Page 1/2
© 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/
B30H40G thru B30H200G
RATING AND CHARACTERISTIC CURVES
275
250
50
AVERAGE FORWARD RECTIFIED
PEAK FORWARD SURGE CURRENT,
40V 225
45-200V
40
CURRENT AMPERES
200
175
30
150
AMPERES
20 125
100
10 RESISTIVE OR
INDUCTIVE LOAD 75
0 50
0 20 40 60 80 100 120 140 160 180
25
0
1 2 5 10 20 50 100
O
LEAD TEMPERATURE, C NO. OF CYCLE AT 60Hz
Fig.2- MAXIMUM NON-REPETITIVE SURGE
Fig.1- FORWARD CURRENT DERATING CURVE
CURRENT
10
40
INSTANTANEOUS REVERSE CURRENT, mA
INSTANTANEOUS FORWARD CURRENT,
TC=125 OC
1.0 10
8
6
4
AMPERES
O
0.1 TC=75 C 2
1.0
0.8
0.6
TC=25 C
O
0.4
0.01 40-45V
50-60V
0.2 80-100V
150-200V
0 .1
0 .001 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
0 20 40 60 80 100
PERCENT OF INSTANTANEOUS REVERSE VOLTAGE, % INSTANTANEOUS FORWARD VOLTAGE, VOLTS
Fig.4- TYPICAL INSTANTANEOUS FORWARD
Fig.3- TYPICAL REVERSE CHARACTERISTIC
CHARACTERISTIC
Rev.10T Page 2/2
© 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/
