2ED2181 (4) S06F

2ED2110S06M
650 V high-side and low-side gate driver with integrated bootstrap diode
Features Product summary
• Unique Infineon Thin-Film-Silicon On Insulator (SOI)-technology VS_OFFSET = 650 V max
• Negative VS transient immunity of 100 V Io+pk / Io-pk (typ.) = 2.5 A / 2.5 A
• Floating channel designed for bootstrap operation VCC = 10 V to 20 V
• Operating voltages (VS node) up to + 650 V Delay matching = 10 ns max.
• Maximum bootstrap voltage (VB node) of + 675 V Propagation delay = 90 ns
• Integrated ultra-fast, low resistance bootstrap diode
• Logic operational up to –11 V on VS Pin
• Negative voltage tolerance on inputs of –5 V
• Independent under voltage lockout for both channels
Package
• Schmitt trigger inputs with hysteresis
• 3.3 V, 5 V and 15 V input logic compatible
• Maximum supply voltage of 25 V
• Shutdown input turns off both channels
• DSO-16 package
• Separate logic and power ground DSO-16
• RoHS compliant

Potential applications
Driving IGBTs, enhancement mode N-Channel MOSFETs in various power electronic applications.
Typical Infineon recommendations are as below:
• Motor drives, general purpose inverters having TRENCHSTOP ™ IGBT6 or 600 V EasyPACK™ modules
• Refrigeration compressors, induction cookers, other major home appliances having RCD series IGBTs or
TRENCHSTOP™ family IGBTs or their equivalent power stages
• Battery operated small home appliances such as power tools, vacuum cleaners using low voltage OptiMOS™
MOSFETs or their equivalent power stages
• Totem pole, half-bridge and full-bridge converters in offline AC-DC power supplies for industrial SMPS having
high voltage CoolMOS™ super junction MOSFETs or TRENCHSTOP™ H3 and WR5 IGBT series
• High power LED and HID lighting having CoolMOS™ super junction MOSFETs
• Electric vehicle (EV) charging stations and battery management systems
• Driving 650 V SiC MOSFETs in above applications

Product validation
Qualified for industrial applications according to the relevant tests of JEDEC47/20/22

Ordering information
Standard pack
Base part number Package type Orderable part number
Form Quantity
2ED2110S06M DSO – 16 Tape and Reel 2500 2ED2110S06MXUMA1

Datasheet Please read the Important Notice and Warnings at the end of this document V 2.3
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2ED2110S06M

650V high-side and low-side driver with integrated bootstrap diode

Description
The 2ED2110S06M is a high voltage, high speed power MOSFET and IGBT driver with independent high and low
side referenced output channels. Based on Infineon’s SOI-technology there is an excellent ruggedness and noise
immunity with capability to maintain operational logic at negative voltages of up to - 11 VDC on VS pin (VCC = 15 V)
on transient voltages. There are not any parasitic thyristor structures present in the device, hence no parasitic
latch up may occur at all temperature and voltage conditions. The logic input is compatible with standard CMOS
or LSTTL output, down to 3.3 V logic. The output drivers feature a high pulse current buffer stage designed for
minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET, SiC
MOSFET or IGBT in the high side configuration, which operate up to 650 V.

Up to 650V

HO
V DD VDD VB
HIN HIN VS TO
SD SD LOAD
V CC
LIN LIN
V SS V SS COM
VCC
LO

*Bootstrap diode is monolithically integrated

This diagram shows electrical connections only. Please refer to our application notes and design tips for proper circuit board layout.
Figure 1 Typical application block diagram

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650V high-side and low-side driver with integrated bootstrap diode

1 Table of contents
Features Product summary ........................................................................................................................ 1
Product validation ....................................................................................................................................................... 1
Description ................................................................................................................................................................... 2
1 Table of contents ................................................................................................................... 3
2 Block diagram........................................................................................................................ 4
3 Pin configuration and functionality .......................................................................................... 5
3.1 Pin configuration ..................................................................................................................................... 5
3.2 Pin functionality ...................................................................................................................................... 5
4 Electrical parameters ............................................................................................................. 6
4.1 Absolute maximum ratings ..................................................................................................................... 6
4.2 Recommended operating conditions..................................................................................................... 6
4.3 Static electrical characteristics ............................................................................................................... 7
4.4 Dynamic electrical characteristics .......................................................................................................... 8
5 Application information and additional details .......................................................................... 9
5.1 IGBT / MOSFET gate drive ....................................................................................................................... 9
5.2 Switching and timing relationships ........................................................................................................ 9
5.3 Matched propagation delays ................................................................................................................ 10
5.4 Enable or shutdown input .................................................................................................................... 10
5.5 Input logic compatibility ....................................................................................................................... 10
5.6 Undervoltage lockout ........................................................................................................................... 11
5.7 Bootstrap diode..................................................................................................................................... 11
5.8 Calculating the bootstrap capacitance CBS .......................................................................................... 12
5.9 Tolerant to negative transients on input pins ...................................................................................... 14
5.10 Negative voltage transient tolerance of VS pin .................................................................................... 14
5.11 NTSOA – Negative Transient Safe Operating Area ............................................................................... 16
5.12 Higher headroom for input to output signal transmission with logic operation upto -11 V .............. 17
5.13 Maximum switching frequency ............................................................................................................. 17
5.14 PCB layout tips ...................................................................................................................................... 18
6 Qualification information....................................................................................................... 20
7 Related products................................................................................................................... 20
8 Package details ..................................................................................................................... 21
9 Part marking information ...................................................................................................... 22
10 Additional documentation and resources................................................................................. 23
10.1 Infineon online forum resources .......................................................................................................... 23
11 Revision history .................................................................................................................... 24

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650 V high-side and low-side driver with integrated bootstrap diode

2 Block diagram

VB
UV
VDD DETECT
R Q
HV
R Q LEVEL PULSE R
S SHIFTER FILTER S HO
VDD/VCC
HIN LEVEL
SHIFT
PULSE
GENERATOR
VS
SD

VCC
UV
VDD/VCC DETECT
LIN LEVEL
SHIFT
S LO
R Q

DELAY

COM
VSS

Figure 2 Block diagrams

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650 V high-side and low-side driver with integrated bootstrap diode

3 Pin configuration and functionality

3.1 Pin configuration

16-Lead DSO-16 (300 mil wide body)

2ED2110S06M
Figure 3 2ED2110S06M pin assignments (top view)

3.2 Pin functionality

Table 1
Symbol Description
VDD Logic supply voltage
HIN Logic input for high side gate driver output (HO), in phase with HO
Logic input for shut down, in phase. Schmitt trigger input with hysteresis and pull
SD
down
LIN Logic input for low side gate driver output (LO), in phase with LO
VSS Logic ground
HO High-side driver output
VB High-side gate drive floating supply
VS High voltage floating supply return
VCC Low-side supply voltage
COM Low-side gate drive return
LO Low-side driver output

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650 V high-side and low-side driver with integrated bootstrap diode

4 Electrical parameters
4.1 Absolute maximum ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage
parameters are absolute voltages referenced to COM unless otherwise stated in the table. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions.

Table 2 Absolute maximum ratings

Symbol Definition Min. Max. Units
VDD Logic supply voltage VSS – 1 VSS + 25
VB High-side floating well supply voltage Note 1 VCC – 6 675
VS High-side floating well supply return voltage VCC – VBS– 6 650
VHO Floating gate drive output voltage VS – 0.5 VB + 0.5
V
VCC Low side supply voltage -1 25
VLO Low-side output voltage –0.5 VCC + 0.5
VIN Logic input voltage (HIN, LIN & SD) VSS – 5 VDD +0.5
VSS Logic ground -7 7
dVS/dt Allowable VS offset supply transient relative to COM — 50 V/ns
PD Package power dissipation @ TA +25ºC — 1.25 W
RthJA Thermal resistance, junction to ambient — 100 ºC/W
TJ Junction temperature — 150
TS Storage temperature -55 150 ºC
TL Lead temperature (soldering, 10 seconds) — 300

Note 1: In case VCC > VB there is an additional power dissipation in the internal bootstrap diode between pins V CC and VB in case of
activated bootstrap diode.

4.2 Recommended operating conditions

For proper operation, the device should be used within the recommended conditions. All voltage parameters
are absolute voltages referenced to COM unless otherwise stated in the table. The offset rating is tested with
supplies of (VCC – COM) = (VB – VS) = 15 V.

Table 3 Recommended operating conditions

Symbol Definition Min Max Units
VDD Logic supply voltage VSS + 3 VSS + 20
VSS Logic ground -6 6
VB Bootstrap voltage VS + 10 VS + 20
VBS High-side floating well supply voltage 10 20
VS High-side floating well supply offset voltage Note 2 -11 650 V
VHO Floating gate drive output voltage VS VB
VCC Low-side supply voltage Note 3 10 20
VLO Low-side output voltage 0 VCC
VIN Logic input voltage(HIN, LIN & SD) VSS - 4 VDD
TA Ambient temperature -40 125 ºC

Note 2: Logic operation for VS of – 11 V to +650 V.

Note 3: Vcc - Vss > 5V is required.

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650 V high-side and low-side driver with integrated bootstrap diode

4.3 Static electrical characteristics

(VDD – VSS) = (VCC – COM) = (VB – VS) = 15 V, VSS = COM and TA = 25 °C unless otherwise specified. The VIN and IIN
parameters are referenced to COM. The VO and IO parameters are referenced to respective VS and COM and are
applicable to the respective output leads HO or LO. The VCCUV parameters are referenced to COM. The VBSUV
parameters are referenced to VS.

Table 4 Static electrical characteristics

Symbol Definition Min. Typ. Max. Units Test Conditions
VDD supply undervoltage positive going
VDDUV+ — 2.85 3.1
threshold
VDD supply undervoltage negative going
VDDUV- 2.55 2.75 —
threshold
VDDUVHY VDD supply undervoltage hysteresis 0.05 0.09 —
VBS supply undervoltage positive going
VBSUV+ 8 8.9 9.8
threshold V
VBS supply undervoltage negative going
VBSUV- 7.3 8 8.7
threshold
VBSUVHY VBS supply undervoltage hysteresis — 0.9 —
VCC supply undervoltage positive going
VCCUV+ 8 8.9 9.8
threshold
VCC supply undervoltage negative going
VCCUV- 7.3 8 8.7
threshold
VCCUVHY VCC supply undervoltage hysteresis — 0.9 —
ILK High-side floating well offset supply leakage — 1 12.5 VB = VS = 650 V
IQBS Quiescent VBS supply current — 150 230
uA
IQCC Quiescent VCC supply current — 600 900 VIN=0 V or VIN=VDD
IQDD Quiescent VDD supply current — 110 200
VOH High level output voltage drop, Vcc- VLO , VB- VHO — — 0.15
V IO = 20 mA
VOL Low level output voltage drop, VO — — 0.15
Io+mean Mean output current from 4.5 V to 7.5 V 1.6 2.25 — CL = 61 nF
VO = 0 V
Io+ Peak output current turn-on1 — 2.5 —
PW ≤ 10 µs
A
Io-mean Mean output current from 7.5 V to 4.5 V 1.6 2.25 — CL = 61 nF
VO = 15 V
Io- Peak output current turn-off1 — 2.5 —
PW ≤ 10 µs
VIH Logic “1” input voltage (HIN, LIN & SD) 70 — —
% of VDD
VIL Logic “0” input voltage (HIN, LIN & SD) — — 30
IIN+ Input bias current (HIN, LIN & SD) — 215 270 VIN = VDD
µA
IIN- Input bias current (HIN, LIN & SD) — — 5 VIN = 0 V
Bootstrap diode forward voltage between Vcc
VFBSD — 0.9 1.2 V IF=0.3 mA
and VB
Bootstrap diode forward current between Vcc
IFBSD 45 82 140 mA VCC-VB=4 V
and VB
RBSD Bootstrap diode resistance 15 27 40 Ω VF1=4V,VF2=5 V
Allowable Negative VS pin voltage for IN
VS — -11 -10 V Vcc=15 V
Signal propagation to HO

1
Not subjected to production test, verified by characterization.
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650 V high-side and low-side driver with integrated bootstrap diode

4.4 Dynamic electrical characteristics

(VDD – VSS) = (VCC – COM) = (VB – VS) = 15 V, VSS = COM, TA = 25 °C and CL = 1000 pF unless otherwise specified.

Table 5 Dynamic electrical characteristics

Symbol Definition Min. Typ. Max. Units Test Conditions
tON Turn-on propagation delay — 90 110
tOFF Turn-off propagation delay — 90 110 VS = 0V or 650V
tSD Shutdown propagation delay — 100 120
tR Turn-on rise time — 25 35 ns
VS = 0V
tF Turn-off fall time — 17 25
Delay matching time (HS & LS turn-
MT — — 10
on/off)

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5 Application information and additional details

5.1 IGBT / MOSFET gate drive

The 2ED2110S06M HVIC is designed to drive MOSFET or IGBT power devices. Figures 4 and 5 illustrate several
parameters associated with the gate drive functionality of the HVIC. The output current of the HVIC, used to drive
the gate of the power switch, is defined as IO. The voltage that drives the gate of the external power switch is
defined as VHO for the high-side power switch and VLO for the low-side power switch; this parameter is sometimes
generically called VOUT and in this case does not differentiate between the high-side or low-side output voltage.

VB VB
(or VCC) (or VCC)

IO+
HO HO
(or LO) (or LO)
+
IO-
VHO (or VLO)
VS - VS
(or COM) (or COM)

Figure 4 HVIC Sourcing current Figure 5 HVIC Sinking current

5.2 Switching and timing relationships

The relationships between the input and output signals of the 2ED2110S06M are illustrated below in Figure 6
and Figure 7. From these figures, we can see the definitions of several timing parameters (i.e. tON, tOFF, tR, and tF)
associated with this device.

50% 50%
HIN
LIN
tON tR tOFF tF

90% 90%

HO
LO 10% 10%

Figure 6 Switching timing diagram Figure 7 Input/output logic diagram

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650 V high-side and low-side driver with integrated bootstrap diode

5.3 Matched propagation delays

The 2ED2110S06M is designed with propagation delay matching circuitry. With this feature, the IC’s response at
the output to a signal at the input requires approximately the same time duration (i.e., t ON, tOFF) for both the low-
side channels and the high-side channels; the maximum difference is specified by the delay matching parameter
(MT). The propagation turn-on delay (tON) of the 2ED2110S06M is matched to the propagation turn-on delay (tOFF).

50% 50%
HIN
LIN

LO HO

10%
MT
MT
90%

LO HO

Figure 8 Delay matching waveform definition

5.4 Enable or shutdown input

2ED2110S06M provides an enable functionality that allows to shutdown or to enable the output. When SD in
pulled up (the enable voltage is higher than VIH) the output is disable, pulling SD low (the enable voltage is lower
than VIL) the output is able to operate normally. The relationships between the input, output and shutdown
signals of the 2ED2110S06M are illustrated in Figure 9. From these figures, we can see the definition of the
parameter (i.e. tSD) associated with this device.

Figure 9 Shutdown waveform definitions

5.5 Input logic compatibility

The input pins of are based on a TTL and CMOS compatible input-threshold logic that is independent of the Vcc
supply voltage. Figure 10 illustrates an input signal to the 2ED2110S06M, its input threshold values, and the logic
state of the IC as a result of the input signal. The 2ED2110S06M features floating input protection wherein if any

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650 V high-side and low-side driver with integrated bootstrap diode

of the input pin is left floating, the output of the corresponding stage is held in the low state. This is achieved
using pull-down resistors on all the input pins (HIN, LIN) as shown in the block diagram.

VIH

(IRS23364D)
Input Signal
VIL

Input Logic
Level High

Low Low

Figure 10 HIN & LIN input thresholds

5.6 Undervoltage lockout

This IC provides undervoltage lockout protection on both the VCC (logic and low-side circuitry) power supply and
the VBS (high-side circuitry) power supply. Figure 11 is used to illustrate this concept; VCC (or VBS) is plotted over
time and as the waveform crosses the UVLO threshold (VCCUV+/- or VBSUV+/-) the undervoltage protection is enabled
or disabled.
Upon power-up, should the VCC voltage fail to reach the VCCUV+ threshold, the IC won’t turn-on. Additionally, if the
VCC voltage decreases below the VCCUV- threshold during operation, the undervoltage lockout circuitry will
recognize a fault condition and shutdown the high and low-side gate drive outputs.
Upon power-up, should the VBS voltage fail to reach the VBSUV+ threshold, the IC won’t turn-on. Additionally, if the
VBS voltage decreases below the VBSUV- threshold during operation, the undervoltage lockout circuitry will
recognize a fault condition, and shutdown the high-side gate drive outputs of the IC.

The UVLO protection ensures that the IC drives the external power devices only when the gate supply voltage is
sufficient to fully enhance the power devices. Without this feature, the gates of the external power switch could
be driven with a low voltage, resulting in the power switch conducting current while the channel impedance is
high; this could result in very high conduction losses within the power device and could lead to power device
failure.
VCC
(or VBS)

VCCUV+
VCCUV- (or VBSUV+)
(or VBSUV-)

Time

UVLO Protection
(Gate Drive Outputs Disabled)
Normal Normal
Operation Operation

Figure 11 UVLO protection

5.7 Bootstrap diode

An ultra-fast bootstrap diode is monolithically integrated for establishing the high side supply. The differential
resistor of the diode helps to avoid extremely high inrush currents when initially charging the bootstrap
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650 V high-side and low-side driver with integrated bootstrap diode

capacitor. The integrated diode with its resistance helps save cost and improve reliability by reducing external
components as shown below figures 12 and 13.

Figure 12 2ED2110S06M with integrated Figure 13 Standard bootstrap gate driver

components

The low ohmic current limiting resistor provides essential advantages over other competitor devices with high
ohmic bootstrap structures. A low ohmic resistor such as in the 2ED2110S06M family allows faster recharching of
the bootstrap capacitor during periods of small duty cycles on the low side transistor. The bootstrap diode is
usable for all kind power electronic converters. The bootstrap diode is a real pn-diode and is temperature robust.
It can be used at high temperatures with a low duty cycle of the low side transistor.
The bootstrap diode of the 2ED2110S06M family works with all control algorithms of modern power electronics,
such as trapezoidal or sinusoidal motor drives control.

5.8 Calculating the bootstrap capacitance CBS

Bootstrapping is a common method of pumping charges from a low potential to a higher one. With this technique
a supply voltage for the floating high side sections of the gate drive can be easily established according to Figure
14. This method has the advantage of being simple and low cost but may force some limitations on duty-cycle
and on-time since they are limited by the requirement to refresh the charge in the bootstrap capacitor. Proper
capacitor choice can reduce drastically these limitations.

Figure 14 Half bridge bootstrap circuit in 2ED2110S06M

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650 V high-side and low-side driver with integrated bootstrap diode

When the low side MOSFET turns on, it will force the potential of pin VS to GND. The existing difference between
the voltage of the bootstrap capacitor VCBS and VCC results in a charging current IBS into the capacitor CBS. The
current IBS is a pulse current and therefore the ESR of the capacitor CBS must be very small in order to avoid losses
in the capacitor that result in lower lifetime of the capacitor. This pin is on high potential again after low side is
turned off and high side is conducting current. But now the bootstrap diode DBS blocks a reverse current, so that
the charges on the capacitor cannot flow back to the capacitor CVCC. The bootstrap diode DBS also takes over the
blocking voltage between pin VB and VCC. The voltage of the bootstrap capacitor can now supply the high side
gate drive sections. It is a general design rule for the location of bootstrap capacitors CBS, that they must be placed
as close as possible to the IC. Otherwise, parasitic resistors and inductances may lead to voltage spikes, which
may trigger the undervoltage lockout threshold of the individual high side driver section. However, all parts of
the 2ED2110S06M family, which have the UVLO also contain a filter at each supply section in order to actively
avoid such undesired UVLO triggers.
The current limiting resistor RBS according to Figure 14 reduces the peak of the pulse current during the low side
MOSFET turn-on. The pulse current will occur at each turn-on of the low side MOSFET, so that with increasing
switching frequency the capacitor CBS is charged more frequently. Therefore a smaller capacitor is suitable at
higher switching frequencies. The bootstrap capacitor is mainly discharged by two effects: The high side
quiescent current and the gate charge of the high side MOSFET to be turned on.

The minimum size of the bootstrap capacitor is given by

𝑄𝐺𝑇𝑂𝑇
𝐶𝐵𝑆 =
∆𝑉𝐵𝑆
VBS is the maximum allowable voltage drop at the bootstrap capacitor within a switching period, typically 1 V.
It is recommended to keep the voltage drop below the undervoltage lockout (UVLO) of the high side and limit

VBS ≤ (VCC – VF– VGSmin– VDSon)

VGSmin > VBSUV- , VGSmin is the minimum gate source voltage we want to maintain and VBSUV- is the high-side supply
undervoltage negative threshold.

VCC is the IC voltage supply, VF is bootstrap diode forward voltage and VDSon is drain-source voltage of low side
MOSFET.
Please note, that the value QGTOT may vary to a maximum value based on different factors as explained below and
the capacitor shows voltage dependent derating behavior of its capacitance.
The influencing factors contributing VBS to decrease are:
- MOSFET turn on required Gate charge (QG)
- MOSFET gate-source leakage current (ILK_GS)
- Floating section quiescent current (IQBS)
- Floating section leakage current (ILK)
- Bootstrap diode leakage current (ILK_DIODE)
- Charge required by the internal level shifters (𝑄𝐿𝑆 ): typical 1nC
- Bootstrap capacitor leakage current (ILK_CAP)
- High side on time (THON)

Considering the above,

𝑄𝐺𝑇𝑂𝑇 = 𝑄𝐺 + 𝑄𝐿𝑆 + (𝐼𝑄𝐵𝑆 + 𝐼𝐿𝐾𝐺𝑆 + 𝐼𝐿𝐾 + 𝐼𝐿𝐾𝐷𝐼𝑂𝐷𝐸 + 𝐼𝐿𝐾𝐶𝐴𝑃 ) ∗ 𝑇𝐻𝑂𝑁

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ILK_CAP is only relevant when using an electrolytic capacitor and can be ignored if other types of capacitors are
used. It is strongly recommend using at least one low ESR ceramic capacitor (paralleling electrolytic capacitor
and low ESR ceramic capacitor may result in an efficient solution).
The above CBS equation is valid for pulse by pulse considerations. It is easy to see, that higher capacitance values
are needed, when operating continuously at small duty cycles of low side. The recommended bootstrap
capacitance is therefore in the range up to 4.7 μF for most switching frequencies. The performance of the
integrated bootstrap diode supports the requirement for small bootstrap capacitances.

5.9 Tolerant to negative transients on input pins

Typically the driver's ground pin is connected close to the source pin of the MOSFET or IGBT. The microcontroller
which sends the HIN and LIN PWM signals refers to the same ground and in most cases there will be an offset
voltage between the microcontroller ground pin and driver ground because of ground bounce. The
2ED2110S06M family can handle negative voltage spikes up to 5 V. The recommended operating level is at
negative 4 V with absolute maximum of negative 5 V. Standard half bridge or high-side/low-side drivers only allow
negative voltage levels down to -0.3 V. The 2ED2110S06M family has much better noise immunity capability on
the input pins.

Figure 15 Negative voltage tolerance on inputs of up to –5 V

5.10 Negative voltage transient tolerance of VS pin

A common problem in today’s high-power switching converters is the transient response of the switch node’s
voltage as the power switches transition on and off quickly while carrying a large current. A typical 3-phase
inverter circuit is shown in Figure 16, here we define the power switches and diodes of the inverter.
If the high-side switch (e.g., the IGBT Q1 in Figures 16 and 17) switches from on to off, while the U phase current
is flowing to an inductive load, a current commutation occurs from high-side switch (Q1) to the diode (D2) in
parallel with the low-side switch of the same inverter leg. At the same instance, the voltage node VS1, swings from
the positive DC bus voltage to the negative DC bus voltage.

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650 V high-side and low-side driver with integrated bootstrap diode

DC+ BUS

D1 Q3 D3 D5
Q1 Q5

W
V VS3 To
Input U VS2
Voltage VS1 Load

Q2 D2 Q4 D4 D6
Q6

DC- BUS

Figure 16 Three phase inverter

Also when the V phase current flows from the inductive load back to the inverter (see Figures 17 C) and D)), and
Q4 IGBT switches on, the current commutation occurs from D3 to Q4. At the same instance, the voltage node, VS2,
swings from the positive DC bus voltage to the negative DC bus voltage.
However, in a real inverter circuit, the VS voltage swing does not stop at the level of the negative DC bus, rather
it swings below the level of the negative DC bus. This undershoot voltage is called “negative VS transient”

DC+ BUS DC+ BUS DC+ BUS DC+ BUS

D1 D3 D3
Q1 Q1 Q3 Q3
ON OFF OFF OFF

IU IV
VS1 VS1 VS2 VS2
IU IV

D2 D2 D4
Q2 Q2 Q4 Q4
OFF OFF OFF ON

DC- BUS
A) DC- BUS
B) DC- BUS
C)
DC- BUS
D)
Figure 17 A) Q1 conducting B) D2 conducting C) D3 conducting D) Q4 conducting

The circuit shown in Figure 18-A depicts one leg of the three phase inverter; Figures 18-B and 18-C show a
simplified illustration of the commutation of the current between Q1 and D2. The parasitic inductances in the
power circuit from the die bonding to the PCB tracks are lumped together in L C and LE for each IGBT. When the
high-side switch is on, VS1 is below the DC+ voltage by the voltage drops associated with the power switch and
the parasitic elements of the circuit. When the high-side power switch turns off, the load current momentarily
flows in the low-side freewheeling diode due to the inductive load connected to VS1 (the load is not shown in
these figures). This current flows from the DC- bus (which is connected to the COM pin of the HVIC) to the load
and a negative voltage between VS1 and the DC- Bus is induced (i.e., the COM pin of the HVIC is at a higher potential
than the VS pin).

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650 V high-side and low-side driver with integrated bootstrap diode

DC+ BUS DC+ BUS DC+ BUS

+
LC1 VLC1
-

Q1 D1 D1
Q1 Q1
ON OFF

LE1 +
VLE1 IU
VS1 - VS1
VS1 -
LC2 VLC2 IU
+

Q2 D2 D2 -
Q2 Q2
VD2
OFF OFF +

-
LE2 VLE2
+
DC- BUS
A DC- BUS
B DC- BUS
C
Figure 18 Figure A shows the Parasitic Elements. Figure B shows the generation of VS positive. Figure C shows
the generation of VS negative

5.11 NTSOA – Negative Transient Safe Operating Area

In a typical motor drive system, dV/dt is typically designed to be in the range of 3 – 5 V / ns. The negative VS
transient voltage can exceed this range during some events such as short circuit and over-current shutdown,
when di/dt is greater than in normal operation.
Infineon’s HVICs have been designed for the robustness required in many of today’s demanding applications. An
indication of the 2ED2110S06M’s robustness can be seen in Figure 19, where the 2ED2110S06M’s Safe Operating
Area is shown at VBS=15 V based on repetitive negative VS spikes. A negative VS transient voltage falling in the
grey area (outside SOA) may lead to IC permanent damage; vice versa unwanted functional anomalies or
permanent damage to the IC do not appear if negative Vs transients fall inside the SOA.

Recommended safe operating area

Figure 19 Negative VS transient SOA for 2ED2110S06M @ VBS=15 V

Even though the 2ED2110S06M has been shown able to handle these large negative VS transient conditions, it
is highly recommended that the circuit designer always limit the negative VS transients as much as possible by
careful PCB layout and component use.

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5.12 Higher headroom for input to output signal transmission with logic
operation upto -11 V
If there is not enough voltage for the level shifter to transmit a valid signal to the high side. High side driver
doesn’t turn on. The level shifter circuit is with respect to COM (refer to Block Diagram on page 4), the voltage
from VB to COM is the supply voltage of level shifter. Under the condition of VS is negative voltage with respect to
COM, the voltage of VS - COM is decreased, as shown in Figure 20. There is a minimum operational supply voltage
of level shifter, if the supply voltage of level shifter is too low, the level shifter cannot pass through HIN signal to
HO. If VB – VS voltage is different, the minimum VS voltage changes accordingly.

VS

COM
- 11 V
Figure 20 Headroom for HV level shifter data transmission

5.13 Maximum switching frequency

The 2ED2110S06M family is capable of switching at higher frequencies as compared to standard half-bridge or
high side / low side gate drivers. They are available in PG-DSO-16 package. It is essential to ensure that the
component is not thermally overloaded when operating at higher frequencies. This can be checked by means of
the thermal resistance junction to ambient and the calculation or measurement of the dissipated power. The
thermal resistance is given in the datasheet (section 4) and refers to a specific layout. Changes of this layout may
lead to an increased thermal resistance, which will reduce the total dissipated power of the driver IC. One should
therefore do temperature measurements in order to avoid thermal overload under application relevant
conditions of ambient temperature and housing.
The maximum chip temperature TJ can be calculated with
𝑇𝐽 = Pd ∙ 𝑅𝑡ℎ𝐽𝐴 + 𝑇𝐴_𝑚𝑎𝑥 , where TA_max is the maximum ambient temperature.

The dissipated power Pd by the driver IC is a combination of several sources. These are explained in detail in the
application note “Advantages of Infineon’s Silicon on Insulator (SOI) technology based High Voltage Gate Driver
ICs (HVICs)”
The output section is the major contributor for the power dissipation of the gate driver IC. The external gate
resistors also contribute to the power dissipation of the gate driver IC. The bigger the external gate resistor, the
smaller the power dissipation in the gate driver.
The losses of the output section are calculated by means of the total gate charge of the power MOSFET or IGBT
it is driving Qgtot, the supply voltage VCC, the switching frequency fP, and the ext. gate resistor Rgon and Rgoff. Different
cases for turn-on and turn-off must be considered, because many designs use different resistors for turn-on and
turn-off. This leads to a specific distribution of losses in respect to the external gate resistor Rgxx_ext and the
internal resistances (Ron_int and Roff_int) of the output section.
2 𝑅𝑜𝑛_𝑖𝑛𝑡
Turn on losses: 𝑃𝑑𝑜𝑛 = 2 × 𝑄𝑔𝑡𝑜𝑡 × 𝑉𝑐𝑐 × 𝑓𝑝 × 𝑅𝑜𝑛_𝑖𝑛𝑡+𝑅𝑔𝑜𝑛_𝑒𝑥𝑡

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2 𝑅𝑜𝑓𝑓_𝑖𝑛𝑡
Turn off losses: 𝑃𝑑𝑜𝑓𝑓 = 2 × 𝑄𝑔𝑡𝑜𝑡 × 𝑉𝑐𝑐 × 𝑓𝑝 × 𝑅𝑜𝑓𝑓_𝑖𝑛𝑡+𝑅𝑔𝑜𝑓𝑓_𝑒𝑥𝑡

The above two losses are then added to the remaining static losses within the gate driver IC and we arrive at the
below figure as example which estimates the gate driver IC temperature rise when switching a given MOSFET at
different switching frequencies.

* Assumptions for above curves: LLC topology, Power switch = IPP60R600P6, Ta = 25 °C, VBUS = 400 V, VCC = 12 V,
Rgon = 3.9 Ω, Rgoff = 1 Ω

Figure 21 Estimated temperature rise in the 2ED2110S06M family gate drivers for different switching
frequencies when switching CoolMOSTM SJ MOSFETs

5.14 PCB layout tips

Distance between high and low voltage components: It’s strongly recommended to place the components tied
to the floating voltage pins (VB and VS) near the respective high voltage portions of the device. Please see the
Case Outline information in this datasheet for the details.

Ground Plane: In order to minimize noise coupling, the ground plane should not be placed under or near the high
voltage floating side.

Gate Drive Loops: Current loops behave like antennas and are able to receive and transmit EM noise (see Figure
22). In order to reduce the EM coupling and improve the power switch turn on/off performance, the gate drive
loops must be reduced as much as possible. Moreover, current can be injected inside the gate drive loop via the
IGBT collector-to-gate parasitic capacitance. The parasitic auto-inductance of the gate loop contributes to
developing a voltage across the gate-emitter, thus increasing the possibility of a self turn-on effect.

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Figure 22 Avoid antenna loops

Supply Capacitor: It is recommended to place a bypass capacitor (CIN) between the VCC and COM pins. A ceramic
1μF ceramic capacitor is suitable for most applications. This component should be placed as close as possible
to the pins in order to reduce parasitic elements.
Routing and Placement: Power stage PCB parasitic elements can contribute to large negative voltage transients
at the switch node; it is recommended to limit the phase voltage negative transients. In order to avoid such
conditions, it is recommended to 1) minimize the high-side emitter to low-side collector distance, and 2)
minimize the low-side emitter to negative bus rail stray inductance. However, where negative VS spikes remain
excessive, further steps may be taken to reduce the spike. This includes placing a resistor (5 Ω or less) between
the VS pin and the switch node (see Figure 23 - A), and in some cases using a clamping diode between COM and
VS (see Figure 23- B). See DT04-4 at www.infineon.com for more detailed explanations.

Figure 23 Resistor between the VS pin and the switch node and clamping diode between COM and VS

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6 Qualification information1
Table 6 Qualification information
Industrial2
Note: This family of ICs has passed JEDEC’s Industrial
Qualification level
qualification. Consumer qualification level is granted by
extension of the higher Industrial level.
MSL33, 260°C
Moisture sensitivity level DSO-16
(per IPC/JEDEC J-STD-020)
Class C3 (1.0 kV)
Charged device model
(per ANSI/ESDA/JEDEC JS-002-2018)
ESD
Class 2 (2 kV)
Human body model
(per ANSI/ESDA/JEDEC JS-001-2017)
Class II Level A
IC latch-up test
(per JESD78E)
RoHS compliant Yes

7 Related products
Table 7
Product Description
Gate Driver ICs
6EDL04I06 / 600 V, 3 phase level shift thin-film SOI gate driver with integrated high speed, low RDS(ON) bootstrap
6EDL04N06 diodes with over-current protection (OCP), 240/420 mA source/sink current drive, Fault reporting,
and Enable for MOSFET or IGBT switches.
2EDL23I06 / 600 V, Half-bridge thin-film SOI level shift gate driver with integrated high speed, low
2EDL23N06 RDSON bootstrap diode, with over-current protection (OCP), 2.3/2.8 A source/sink current driver,
and one pin Enable/Fault function for MOSFET or IGBT switches.
Power Switches
IKD04N60R / RF 600 V TRENCHSTOP™ IGBT with integrated diode in PG-TO252-3 package
IKD06N65ET6 650 V TRENCHSTOP™ IGBT with integrated diode in DPAK
IPD65R950CFD 650 V CoolMOS CFD2 with integrated fast body diode in DPAK
IPN50R950CE 500 V CoolMOS CE Superjunction MOSFET in PG-SOT223 package
iMOTION™ Controllers
IRMCK099 iMOTION™ Motor control IC for variable speed drives utilizing sensor-less Field Oriented Control
(FOC) for Permanent Magnet Synchronous Motors (PMSM).
IMC101T High performance Motor Control IC for variable speed drives based on field oriented control (FOC)
of permanent magnet synchronous motors (PMSM).

1
Qualification standards can be found at Infineon’s web site www.infineon.com
2
Higher qualification ratings may be available should the user have such requirements. Please contact your Infineon sales
representative for further information.
3
Higher MSL ratings may be available for the specific package types listed here. Please contact your Infineon sales representative for
further information.
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8 Package details

Figure 24 16 - Lead DSO (2ED2110S06M)

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9 Part marking information

Front Side Back Side

Part number 2ED2110 XXX

Infineon logo Lot code XXXX
Assembly
H YYWW Date code XXXX X site code
Pin 1
identifier
(may vary)

Figure 25 Marking information PG-DSO-16

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10 Additional documentation and resources

Several technical documents related to the use of HVICs are available at www.infineon.com; use the Site Search
function and the document number to quickly locate them. Below is a short list of some of these documents.

Application Notes:
Understanding HVIC Datasheet Specifications
HV Floating MOS-Gate Driver ICs
Use Gate Charge to Design the Gate Drive Circuit for Power MOSFETs and IGBTs
Bootstrap Network Analysis: Focusing on the Integrated Bootstrap Functionality

Design Tips:
Using Monolithic High Voltage Gate Drivers
Alleviating High Side Latch on Problem at Power Up
Keeping the Bootstrap Capacitor Charged in Buck Converters
Managing Transients in Control IC Driven Power Stages
Simple High Side Drive Provides Fast Switching and Continuous On-Time

10.1 Infineon online forum resources

The Gate Driver Forum is live at Infineon Forums (www.infineonforums.com). This online forum is where the
Infineon gate driver IC community comes to the assistance of our customers to provide technical guidance – how
to use gate drivers ICs, existing and new gate driver information, application information, availability of demo
boards, online training materials for over 500 gate driver ICs. The Gate Driver Forum also serves as a repository
of FAQs where the user can review solutions to common or specific issues faced in similar applications.

Register online at the Gate Driver Forum and learn the nuances of efficiently driving a power switch in any given
power electronic application.

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11 Revision history

Document Date of release Description of changes

version
2.2 Aug 23, 2021 Final Datasheet
2.3 Oct 29, 2021 Corrected ESD and IC latch-up test stardard on page 20.

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