KSA733

KSA733

Low Frequency Amplifier

• Collector-Base Voltage : VCBO= -60V
• Complement to KSC945
• Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base)

1 TO-92
1. Emitter 2. Base 3. Collector

PNP Epitaxial Silicon Transistor

Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol Parameter Ratings Units
VCBO Collector-Base Voltage -60 V
VCEO Collector-Emitter Voltage -50 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current -150 mA
PC Collector Power Dissipation 250 mW
TJ Junction Temperature 150 °C
TSTG Storage Temperature -55 ~ 150 °C

Electrical Characteristics Ta=25°C unless otherwise noted

Symbol Parameter Test Condition Min. Typ. Max. Units
BVCBO Collector-Base Breakdown Voltage IC= -100µA, IE=0 -60 V
BVCEO Collector-Emitter Breakdown Voltage IC= -10mA. IB=0 -50 V
BVEBO Emitter-Base Breakdown Voltage IE = -10µA. IC=0 -5 V
ICBO Collector Cut-off Current VCB= --60V, IE=0 -100 nA
IEBO Emitter Cut-off Current VEB= -5V, IC=0 -100 nA
hFE DC Current Gain VCE= -6V, IC= -1mA 40 700
VCE (sat) Collector-Emitter Saturation Voltage IC= -100mA, IB= -10mA -0.18 -0.3 V
VBE (on) Base-Emitter On Voltage VCE= -6V, IC= -1mA -0.50 -0.62 -0.80 V
fT Current Gain Bandwidth Product VCE= -6V, IC= -10mA 50 180 MHz
Cob Output Capacitance VCB= -10V, IE = 0, f=1MHz 2.8 pF
NF Noise Figure VCE= -6V, IC= -0.3mA 6.0 20 dB
f=1MHz, Rs=10kΩ

hFE Classification
Classification R O Y G L
hFE 40 ~ 80 70 ~ 140 120 ~ 240 200 ~ 400 350 ~ 700

©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002

 KSA733
Typical Characteristics

-50 1000

VCE = -6V
-45
IB = -400µ A
IC[mA], COLLECTOR CURRENT

-40
IB = -350µ A

hFE, DC CURRENT GAIN

-35
IB = -300µ A 100

-30 IB = -250µ A
-25
IB = -200µ A
-20
IB = -150µ A 10
-15
IB = -100µ A
-10

-5 IB = -50µ A

0 1
0 -2 -4 -6 -8 -10 -12 -14 -16 -18 -20 -0.1 -1 -10 -100

VCE[V], COLLECTOR-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT

Figure 1. Static Characteristic Figure 2. DC current Gain

VBE(sat), VCE(sat)[V], SATURATION VOLTAGE

-10 -100

IC = 10 IB VCE = -6V
IC[mA], COLLECTOR CURRENT

-1 -10
V BE(sat)

-0.1 -1

V CE(sat)

-0.01 -0.1
-1 -10 -100 -1000 0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2

IC[mA], COLLECTOR CURRENT VBE[V], BASE-EMITTER VOLTAGE

Figure 3. Base-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage

Collector-Emitter Saturation Voltage
fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT

1000

IE = 0 VCE = -6V
f = 1MHz
10
Cob [pF], CAPACITANCE

100

10
1 -1 -10
-1 -10 -100

VCB [V], COLLECTOR-BASE VOLTAGE IC[mA], COLLECTOR CURRENT

Figure 5. Collector Output Capacitance Figure 6. Current Gain Bandwidth Product

©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002

 KSA733
Package Dimensions

TO-92
+0.25
4.58 –0.15

4.58 ±0.20

0.46 ±0.10
14.47 ±0.40

+0.10
1.27TYP 1.27TYP 0.38 –0.05
[1.27 ±0.20] [1.27 ±0.20]

3.60 ±0.20
3.86MAX

(0.25)
+0.10
0.38 –0.05
1.02 ±0.10

(R2.29)

Dimensions in Millimeters

©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002

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PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In This datasheet contains the design specifications for
Design product development. Specifications may change in
any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

©2002 Fairchild Semiconductor Corporation Rev. I1