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SEMICONDUCTOR TECHNICAL DATA by MBR2035CT/D

       

. . . using the Schottky Barrier principle with a platinum barrier metal. These
state–of–the–art devices have the following features:
 
• Guardring for Stress Protection MBR2045CT is a
• Low Forward Voltage Motorola Preferred Device

• 150°C Operating Junction Temperature

• Guaranteed Reverse Avalanche
SCHOTTKY BARRIER
• Epoxy Meets UL94, VO at 1/8″ RECTIFIERS
Mechanical Characteristics: 20 AMPERES
• Case: Epoxy, Molded 35 and 45 VOLTS
• Weight: 1.9 grams (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal Leads are
Readily Solderable
4
• Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds
• Shipped 50 units per plastic tube
• Marking: B2035, B2045 1
2, 4 1
3 2
3
CASE 221A–06
TO–220AB
PLASTIC
MAXIMUM RATINGS
Rating Symbol MBR2035CT MBR2045CT Unit
Peak Repetitive Reverse Voltage VRRM 35 45 Volts
Working Peak Reverse Voltage VRWM
DC Blocking Voltage VR
Average Rectified Forward Current (Rated VR) IF(AV) 20 20 Amps
TC = 135°C
Peak Repetitive Forward Current Per Diode Leg IFRM 20 20 Amps
(Rated VR, Square Wave, 20 kHz) TC = 135°C
Nonrepetitive Peak Surge Current IFSM 150 150 Amps
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
Peak Repetitive Reverse Surge Current IRRM 1.0 1.0 Amp
(2.0 µs, 1.0 kHz) See Figure 11
Operating Junction Temperature TJ *65 to +150 *65 to +150 °C
Storage Temperature Tstg *65 to +175 *65 to +175 °C
Voltage Rate of Change (Rated VR) dv/dt 1000 1000 V/µs
THERMAL CHARACTERISTICS
Maximum Thermal Resistance, Junction to Case RθJC 2.0 2.0 °C/W
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (1) vF Volts
(iF = 10 Amps, TC = 125°C) 0.57 0.57
(iF = 20 Amps, TC = 125°C) 0.72 0.72
(iF = 20 Amps, TC = 25°C) 0.84 0.84
Maximum Instantaneous Reverse Current (1) iR mA
(Rated dc Voltage, TC = 125°C) 15 15
(Rated dc Voltage, TC = 25°C) 0.1 0.1
(1) Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0%.

SWITCHMODE is a trademark of Motorola, Inc.

Preferred devices are Motorola recommended choices for future use and best overall value.

Rev 2

Rectifier Device
Motorola, Inc. 1996 Data 1
    
100 100
TJ = 150°C
TJ = 150°C
70 70
100°C 25°C
50 25°C 50 100°C

30 30

20 20
iF, INSTANTANEOUS FORWARD CURRENT (AMPS)

iF, INSTANTANEOUS FORWARD CURRENT (AMPS)

10 10

7.0 7.0

5.0 5.0

3.0 3.0

2.0 2.0

1.0 1.0

0.7 0.7

0.5 0.5

0.3 0.3

0.2 0.2

0.1 0.1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.2 0.4 0.6 0.8 1.0 1.2 1.4
vF, INSTANTANEOUS VOLTAGE (VOLTS) vF, INSTANTANEOUS VOLTAGE (VOLTS)

Figure 1. Maximum Forward Voltage Figure 2. Typical Forward Voltage

100 200
IFSM , PEAK HALF–WAVE CURRENT (AMPS)

TJ = 150°C

10 125°C
IR , REVERSE CURRENT (mA)

100°C 100
1.0
75°C 70

0.1 50
25°C
0.01 30

0.001 20
0 5.0 10 15 20 25 30 35 40 45 50 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
VR, REVERSE VOLTAGE (VOLTS) NUMBER OF CYCLES AT 60 Hz

Figure 3. Maximum Reverse Current Figure 4. Maximum Surge Capability

2 Rectifier Device Data

    
40 32

IF(AV) , AVERAGE FORWARD CURRENT (AMPS)

IF(AV) , AVERAGE FORWARD CURRENT (AMPS)

RATED VOLTAGE APPLIED RATED VOLTAGE APPLIED
35 28

+ p (RESISTIVE LOAD) + p (RESISTIVE LOAD)

I I
PK PK
30 I 24 I
AV AV
25 20

+5
I SQUARE SQUARE
20 (CAPACITIVE LOAD) PK 16
I WAVE WAVE
AV
15 12
10 dc
10 20 8.0
dc
+ 20, 10, 5
I
5.0 4.0 (CAPACITIVE LOAD) PK
I
AV
0 0
110 120 130 140 150 160 0 20 40 60 80 100 120 140 160
TC, CASE TEMPERATURE (°C) TA, AMBIENT TEMPERATURE (°C)

Figure 5. Current Derating, Infinite Heatsink Figure 6. Current Derating, RqJA = 16°C/W
PF(AV) , AVERAGE FORWARD POWER DISSIPATION (WATTS)

20 10

IF(AV) , AVERAGE FORWARD CURRENT (AMPS)

SQUARE dc RATED VOLTAGE APPLIED
18 RqJA = 60°C/W
SINE WAVE WAVE
16 8.0
+ p (RESISTIVE LOAD)
RESISTIVE LOAD I
PK
+5
14 I I
(CAPACITIVE LOAD) PK AV
12 I 6.0
AV SQUARE
10
10 WAVE
20
8.0 4.0
6.0
dc
4.0 TJ = 150°C 2.0
+ 20, 10, 5
I
(CAPACITIVE LOAD) PK
2.0 I
AV
0 0
0 4.0 8.0 12 16 20 24 28 32 0 20 40 60 80 100 120 140 160
IF(AV), AVERAGE FORWARD CURRENT (AMPS) TA, AMBIENT TEMPERATURE (°C)

Figure 7. Forward Power Dissipation Figure 8. Current Derating, Free Air

1.0
0.7
r(t), TRANSIENT THERMAL RESISTANCE

0.5

0.3
0.2
(NORMALIZED)

Ppk Ppk
DUTY CYCLE, D = tp/t1
tp
PEAK POWER, Ppk, is peak of an
0.1 TIME
equivalent square power pulse.
0.07 t1
0.05 ∆TJL = Ppk • RθJL [D + (1 – D) • r(t1 + tp) + r(tp) – r(t1)] where:
∆TJL = the increase in junction temperature above the lead temperature.
0.03 r(t) = normalized value of transient thermal resistance at time, t, i.e.:
0.02 r(t1 + tp) = normalized value of transient thermal resistance at time,
t1 + tp, etc.
0.01
0.01 0.1 1.0 10 100 1000
t, TIME (ms)

Figure 9. Thermal Response

Rectifier Device Data 3

    
1500
HIGH FREQUENCY OPERATION
Since current flow in a Schottky rectifier is the result of majority
carrier conduction, it is not subject to junction diode forward and 1000
reverse recovery transients due to minority carrier injection and

C, CAPACITANCE (pF)
stored charge. Satisfactory circuit analysis work may be performed 700
by using a model consisting of an ideal diode in parallel with a
variable capacitance. (See Figure 10.) 500
Rectification efficiency measurements show that operation will
be satisfactory up to several megahertz. For example, relative MAXIMUM
waveform rectification efficiency is approximately 70 percent at 300
2.0 MHz, e.g., the ratio of dc power to RMS power in the load is TYPICAL
0.28 at this frequency, whereas perfect rectification would yield
0.406 for sine wave inputs. However, in contrast to ordinary 200
junction diodes, the loss in waveform efficiency is not indicative of
150
power loss; it is simply a result of reverse current flow through the 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50
diode capacitance, which lowers the dc output voltage.
VR, REVERSE VOLTAGE (VOLTS)

Figure 10. Capacitance

+150 V, 10 mAdc

2.0 kΩ

VCC 12 Vdc

+
D.U.T.
12 V 100 4.0 µF
2N2222

2.0 µs
1.0 kHz

CURRENT 2N6277
AMPLITUDE 100
ADJUST CARBON
0–10 AMPS

1.0 CARBON

1N5817

Figure 11. Test Circuit for dv/dt and

Reverse Surge Current

4 Rectifier Device Data

    
PACKAGE DIMENSIONS

NOTES:
SEATING 1. DIMENSIONING AND TOLERANCING PER ANSI
–T– PLANE
Y14.5M, 1982.
B F C 2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
T S BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
4
INCHES MILLIMETERS
A DIM MIN MAX MIN MAX
Q A 0.570 0.620 14.48 15.75
1 2 3 B 0.380 0.405 9.66 10.28
U C 0.160 0.190 4.07 4.82
H D 0.025 0.035 0.64 0.88
F 0.142 0.147 3.61 3.73
K G 0.095 0.105 2.42 2.66
Z H 0.110 0.155 2.80 3.93
J 0.018 0.025 0.46 0.64
K 0.500 0.562 12.70 14.27
L 0.045 0.060 1.15 1.52
L R N 0.190 0.210 4.83 5.33
V Q 0.100 0.120 2.54 3.04
J R 0.080 0.110 2.04 2.79
G S 0.045 0.055 1.15 1.39
T 0.235 0.255 5.97 6.47
D U 0.000 0.050 0.00 1.27
N V 0.045 ––– 1.15 –––
Z ––– 0.080 ––– 2.04

CASE 221A–06
(TO–220AB)
ISSUE Y

Rectifier Device Data 5

    

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6 ◊ Rectifier MBR2035CT/D
Device Data