SMK1265F

Advanced N-Ch Power MOSFET

SWITCHING REGULATOR APPLICATIONS

Features PIN Connection
 High Voltage : BVDSS=650V(Min.)
D
 Low Crss : Crss=14.6pF(Typ.)
 Low gate charge : Qg=41nC(Typ.)
 Low RDS(on) : RDS(on)=0.8Ω(Max.)
G
Ordering Information
Type No. Marking Package Code GD
S
S
SMK1265F SMK1265 TO-220F-3L TO-220F-3L

Marking Diagram
Column 1 : Manufacturer
Column 2 : Production Information
AUK
AUK
GYMDD e.g.) GYMDD
Δ YMDD
SMK1265 -. G : Factory management code
SDB20D45
-. YMDD : Date Code (year, month, date)
Column 3 : Device Code

Absolute maximum ratings (TC=25C unless otherwise noted)

Characteristic Symbol Rating Unit
Drain-source voltage VDSS 650 V
Gate-source voltage VGSS 30 V
TC=25℃ 12 A
Drain current (DC) * ID
TC=100℃ 4.5 A
*
Drain current (Pulsed) IDM 48 A
Power dissipation PD 45 W
Avalanche current (Single) ② IAS 12 A
Single pulsed avalanche energy ② EAS 140 mJ
Avalanche current (Repetitive) ① IAR 12 A
Repetitive avalanche energy ① EAR 7.6 mJ
Junction temperature TJ 150
C
Storage temperature range Tstg -55~150
* Limited by maximum junction temperature

Characteristic Symbol Typ. Max. Unit

Thermal Junction-case Rth(J-C) - 2.7
℃/W
resistance Junction-ambient Rth(J-A) - 62.5

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Electrical Characteristics (TC=25C unless otherwise noted)
Characteristic Symbol Test Condition Min. Typ. Max. Unit
Drain-source breakdown voltage BVDSS ID=250uA, VGS=0V 650 - - V
Gate threshold voltage VGS(th) ID=250uA, VDS=VGS 2.0 - 4.0 V
Drain-source cut-off current IDSS VDS=650V, VGS=0V - - 1 uA
Gate leakage current IGSS VDS=0V, VGS=30V - - 100 nA
Drain-source on-resistance ④ RDS(on) VGS=10V, ID=6.0A - 0.68 0.80 
Forward transfer conductance ④ gfs VDS=10V, ID=6.0A - 10 - S
Input capacitance Ciss - 2162 2882
VGS=0V, VDS=25V
Output capacitance Coss - 183 244 pF
f=1 MHz
Reverse transfer capacitance Crss - 14.6 19.4
Turn-on delay time td(on) - 30 -
Rise time tr VDD=300V, ID=12A - 85 -
RG=25Ω ns
Turn-off delay time td(off) ③④ - 140 -
Fall time tf - 90 -
Total gate charge Qg - 43 65
VDS=520V, VGS=10V
Gate-source charge Qgs ID=12A - 13 - nC
③④
Gate-drain charge Qgd - 10.5 -

Source-Drain Diode Ratings and Characteristics (TC=25C unless otherwise noted)

Characteristic Symbol Test Condition Min. Typ. Max. Unit
Source current (DC) IS Integral reverse diode - - 12
A
Source current (Pulsed) ① ISM in the MOSFET - - 48
Forward voltage ④ VSD VGS=0V, IS=12A - - 1.4 V
Reverse recovery time trr IS=12A, VGS=0V - 500 - ns
Reverse recovery charge Qrr dIF/dt=100A/us - 4.3 - uC

Note ;
① Repetitive rating : Pulse width limited by maximum junction temperature
② L=1.8mH, IAS=12A, VDD=50V, RG=25Ω, Starting TJ=25℃
③ Pulse Test : Pulse width≤300us, Duty cycle≤2%
④ Essentially independent of operating temperature

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Electrical Characteristic Curves
Fig. 1 ID - VDS Fig. 2 ID - VGS

Fig. 3 RDS(on) - ID Fig. 4 IS - VSD

Fig. 5 Capacitance - VDS Fig.6 VGS - QG

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Electrical Characteristic Curves

Fig. 7 VDSS - TJ Fig.8 RDS(on) - TJ

C C

Fig. 9 ID - TC Fig. 10 Safe Operating Area

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Fig. 11 Gate Charge Test Circuit & Waveform

Fig. 12 Resistive Switching Test Circuit & Waveform

Fig. 13 EAS Test Circuit & Waveform

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Fig. 14 Diode Reverse Recovery Time Test Circuit & Waveform

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Outline Dimension unit: mm

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The AUK Corp. products are intended for the use as components in general electronic
equipment (Office and communication equipment, measuring equipment, home
appliance, etc.).
Please make sure that you consult with us before you use these AUK Corp. products
in equipments which require high quality and / or reliability, and in equipments which
could have major impact to the welfare of human life(atomic energy control, airplane,
spaceship, transportation, combustion control, all types of safety device, etc.). AUK
Corp. cannot accept liability to any damage which may occur in case these AUK Corp.
products were used in the mentioned equipments without prior consultation with AUK
Corp..
Specifications mentioned in this publication are subject to change without notice.

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