Moe Notes
Moe Notes
COMMUNICATION ENGINEERING
Microwave Frequencies
Relationship between the frequency and the wavelength of an E.M. wave is
                                    λ f=c
         Where,
           c - Velocity of electromagnetic radiation, usually called the speed of light.
            λ- Wavelength
            f- Frequency
Microwave Frequency Band
E-PLANE TEE
    Model 3061 E - plane tee are series type T - junction and consists of three section of
     wave guide joined together in order to divide or compare power levels.
    The signal entering the first port of this T - junction will be equally dividing at second and
     third ports of the same magnitude but in opposite phase.
H - PLANT TEE
     Model 3065 H - Plane Tee are shunt type T - junction for use in conjunction with VSWR
       meters, frequency - meters and other detector devices.
     Like in E-plane tee, the signal fed through first port of H - plane Tee will be equally
       divided in magnitude at second and third ports but in same phase.
MAGIC TEE
    Model 3045 E - H Tee consists of a section of wave guide in both series and shunt
      wave guide arms, mounted at the exact midpoint of main arm. Both ends of the section
      of wave guide and both arms are flanged on their ends.
    These Tees are employed in balanced mixers, AFC circuits and impedance
      measurement circuits etc. This becomes a four terminal device where one terminal is
      isolated from the input terminal.
DIRECTIONAL COUPLERS
    Model 6000 series Multi-hole directional couplers are useful for sampling a part of
     Microwave energy for monitoring purposes and for measuring reflections and
     impedance.
      These consist of a section of Wave guide with addition of a second parallel section of
       wave guide thus making it a four port network. However the fourth port is terminated with
       a matched load.
      These two parallel sections are coupled to each other through many holes, almost to
       give uniform coupling; minimum frequency sensitivity and high directivity. These are
       available in 3, 6, 10, 20 and 40dB coupling.
CIRCULATORS
    Model 6021 and 6022 are T and Y types of three port circulators respectively. These are
     precisely machined and assembled to get the desired specifications.
    Circulators are matched three port devices and these are meant for allowing Microwave
     energy to flow in clockwise direction with negligible loss but almost no transmission in
     the anti-clockwise direction.
ISOLATORS
    The three port circulators Model 6021 may be converted into isolators by terminating one
     of its port into matched load.
    These will work over the frequency range of circulators. These are well matched devices
     offering low forward insertion loss and high reverse isolation.
Gunn diode and its modes of operation:
      A Gunn Diode is considered as a type of diode even though it does not contain any
       typical PN diode junction like the other diodes, but it consists of two electrodes. This
       diode is also called as a Transferred Electronic Device.
      This diode is a negative differential resistance device, which is frequently used as a low-
       power oscillator to generate microwaves.
      It consists of only N-type semiconductor in which electrons are the majority charge
       carriers. To generate short radio waves such as microwaves, it utilizes the Gunn Effect.
      The central region shown in the figure is an active region, which is properly doped N-
       type GaAs and epitaxial layer with a thickness of around 8 to 10 micrometers.
      The active region is sandwiched between the two regions having the Ohmic contacts.
      A heat sink is provided to avoid overheating and premature failure of the diode and to
       maintain thermal limits.
      Only N-type material is used, which is due to the transferred electron effect applicable
       only to N-type materials and is not applicable to the P-type materials. The frequency can
       be varied by varying the thickness of the active layer while doping.
Gunn Effect:
      Gunn-Effect diodes are named after J.B.Gunn, who discovered periodic fluctuations of
       current passing through the n-type Gallium Arsenide (GaAs) specimen when the applied
       voltage exceeded a certain critical value.
      The Gunn Effect can be defined as generation of microwave power (power with
       microwave frequencies of around a few GHz) whenever the voltage applied to a
       semiconductor device exceeds the critical voltage value or threshold voltage value.
      Above some critical voltage, corresponding to an electric field of 2000 – 4000 Volts/Km.
       the period of oscillations will be usually inversely proportional to the specimen length and
       closely equal to the transit time of electrons between the electrodes.
      Gunn Effect can be explained on basis of two valley theory of Ridley-Watkins-Hilsum
       (RWH) theory or the transferred electron mechanism.
Negative Resistance
    The carrier drift velocity is linearly increased from zero to a maximum when the electric
      field is varied from zero to a threshold value.
    When the electric field is beyond the threshold value of 3000 V/cm for the n-type GaAs,
      the drift velocity is decreased and the diode exhibits negative resistance. This shown in
      figure below:
      The current fluctuations of n-type GaAs diode is shown below: the current waveform was
       produced by applying a voltage pulse of 16 V amplitude and 10 ns duration to a n-type
       GaAs 2.5×10-3 cm in length. The oscillation was 4.5 GHz
                               Fig: current waveform of n-type GaAs
      The electrical equivalent circuit of a Gunn diode is shown in figure below:
Modes of operation:
    Depending on the material parameters and operating conditions, a Gunn Effect oscillator
     can be made to oscillate in any of the four frequency modes.
         1. Gunn Oscillation Mode
         2. Stable Amplification Mode
         3. Limited space charge Accumulator (LSA) Mode
         4. Bias-Circuit Oscillation Mode
1. Gunn Oscillation Mode:
    This mode is defined in the region where the product of frequency multiplied by length is
     about 107cm/s and the product of doping multiplied by length is greater than 1012 /cm2.
      In this region the device is unstable because of the cyclic formation of either the
       accumulation layer or the high field domain.
      In a circuit with relatively low impedance the device operates in the high field domain
       mode and the frequency of oscillation is near the intrinsic frequency.
       When the device is operated in a relatively high- Q cavity and coupled properly to the
        load, the domain is quenched or delayed (or both) before nucleating.
       In this case, the oscillation frequency is almost entirely determined by the resonant
        frequency of the cavity and has a value several times the intrinsic frequency.
       IMPATT diode consists of a high doping avalanching region and a drift region.
       All the above IMPATT diode types and their doping profile is shown in figure below.
       The field applied to the IMPATT diode is about 5KV/cm. The total field across the diode
        is sum of a RF ac voltage superimposed on high dc voltage.
       When a p-n junction is reverse biased, in the depletion layer, avalanche breakdown
        takes place. Avalanche current lags the applied field by π/2 radians.
       The distances travelled by various carriers are not equal but the additional phase shift
        caused by the drift of carriers makes the carriers to create a negative resistance.
                             Fig; Various structures of IMPATT diode
   A dc electric field distribution that exists when a large reverse bias is applied across the
    diode is shown in figure below:
Fig: (a) IMPATT Diode (b) Field Distribution (c) Input Voltage (d) Output Pulse
   The diode is an n+-p-i-p+ structure, where the subscript plus sign denotes very high
    doping and the ‘i’ refers to intrinsic material.
      The device consists essentially of two regions. one is the thin p region at which
       avalanche multiplication occurs. This region is also called the high-field region or the
       avalanche region. The other is the ‘i’ region through which the generated holes must drift
       in moving to the p+ contact. This region is also called the intrinsic region or the drift
       region.
      The p region is very thin. The space between the ‘n+-p’ junction and the ‘i-p’ junction is
       called the space-charge region. Similar devices can be built in the p+-n-i-n+ structure,
       in which electrons generated from avalanche multiplication drift through the i region.
      IMPATT diode exhibits negative resistance which can be obtained by a junction diode of
       any doping profile, which in turn delivers power from the dc bias to the oscillation.
Working Principle
   When the reverse-biased voltage is well above the punch through or breakdown voltage,
      the space-charge region always extends from the n+-p junction through the p and i
      regions to the i-p junctions.
   The fixed charges in the various regions are shown fig.(b) above. A positive charge
      gives a rising field in moving from left to right. The maximum field, which occurs at
      then+-p junction is about several hundred kilovolts per centimeter.
   Carriers9holes) moving in the high field near n+-p junction acquire energy to knock
      valence electrons into the conduction band, thus producing hole-electron pairs.
   The rate of pair production or avalanche multiplication is a sensitive nonlinear function of
      the field. By proper doping, the field can be given a relatively sharp peak so that
      avalanche multiplication is confined to a very narrow region at the n+-p junction.
   The electrons move into the n+ region and the holes drift through the space charge
      region to the p+ region with a constant velocity e of about 10 3 cm/s for silicon.
   The field throughout the space charge region is above about 5 KV/cm.
                                                                                           𝑳
      The transit time of a hole across the drift i-region of length L is given by 𝝉 =   𝑽𝒅
Operating Frequency
   Thus, the operating frequency around the π transit angle is
                                                  𝟏
                                             𝒇=
                                                  𝟐𝝉
Where 𝜏 is the transit time
On substituting the value of 𝜏 ,then can be expressed as
                                                   𝑽𝒅
                                               𝒇=
                                                   𝟐𝑳
               Where,
               τ- Transit time
               Vd – Drift velocity (m/s)
               L – Drift Length (m)
    When the holes generated at the n+-p junction drift throughthe space charge region,
      they cause a reduction of the field in accordance with poison’s equation;
                                             𝝏𝑬       𝝆
                                                 = −
                                              𝝏𝒙     𝝐𝒔
                 Where,
                𝜌-Volume charge density
               𝜀𝑠-semiconductor permitivity
             𝑤ℎ𝑒𝑟𝑒, 𝜌 − 𝑣𝑜𝑙𝑢𝑚𝑒 𝑐ℎ𝑎𝑟𝑔𝑒 𝑑𝑒𝑛𝑠𝑖𝑡𝑦 𝑎𝑛𝑑 𝜀𝑠 − 𝑠𝑒𝑚𝑖𝑐𝑜𝑛𝑑𝑢𝑐𝑡𝑜𝑟 𝑝𝑒𝑟𝑚𝑖𝑡𝑖𝑣𝑖𝑡𝑦.
    Since the drift velocity of the holes in the space charge region is constant, the induced
      current Ie(t) in the external circuit is simply equal to
                                                       𝑸    𝒗𝒅𝑸
                                              𝑰𝒆(𝒕) =    =
                                                       𝝉      𝑳
              Where,
                       vd- drift velocity,
                       Q-total charge of the moving holes,
                       L – drift Length
    When, the pulse of hole current Io(t) is suddenly generated at the n+-p junction, a
      constant current Ie(t) starts flowing in the external circuit and continues to flow during the
      time τ in which the holes are moving across the space-charge region.
    Thus, on the average, the external current Ie(t) because of the moving holes is delayed
      by τ/2 or 90o relative to the ac voltage as shown in figure (d) above.
Output Power
    The external current approaches a square wave, being very small during the positive
      half cycle of the ac voltage and almost constant during the negative half cycle.
    Since the direct current supplied by the dc bias is the average external current or
      conductive current, it follows that the amplitude of variation of Ie(t) is approximately
      equal to Id. If Vo is the amplitude of the ac voltage, the ac power delivered is found to be
                                        𝑷 = 𝟎. 𝟕𝟎𝟕 𝑽𝒐 𝑰𝒅 𝑾/𝒖𝒏𝒊𝒕 𝒂𝒓𝒆𝒂
                                                𝑷𝒎 = 𝑰𝒎𝑽𝒎
                                                    𝑬𝒎𝟐 . 𝒗𝒅𝟐
                                       𝒊. 𝒆. , 𝑷𝒎 =
                                                      𝟒𝝅𝟐 𝑿𝒄
Efficiency
    The efficiency of the IMPATT diode is given by,
                                                  𝑃𝑎𝑐
                                              𝜂=
                                                  𝑃𝑑𝑐
                                                  𝑽𝒂 𝑰𝒂
                                             𝜼=
                                                  𝑽𝒅 𝑰𝒅
Advantages
     It is wideband
     Pulse power is high
     Suitable for high frequency
Disadvantages
    It is a noisy device
    Tuning range is not high
Application of IMPATT Diode
    As microwave oscillator
    As modulated oscillator
    As receiver local oscillator
    As parametric amplifier pump
    In radar reception
    In communication transmission
    As negative resistance
TRAPATT diodes:
Construction
   TRAPATT diode is derived from IMPATT diode.
   In TRAPATT diodes the doping level between the junction and anode changes
      gradually. Silicon or Gallium Arsenide is used for fabricating TRAPATT diodes.
   Figure shows the construction of TRAPATT diode.
   Construction of avalanche p+ - n – n+ is shown but when better power dissipation is
      required n+ - p – p+ structure is preferred.
Working Principle
   A square current pulse is used to excite TRAPATT diode.
      As soon as diode is excited the charge is accumulated in the depletion region at the
       junction and the electric field across the junction increases linearly.
      When the sufficient carriers are generated it then depress throughout the depletion
       region, causing the voltage to fall down.
      During the interval formation of plasma takes place. Voltage and current continue to
       decrease to residual value and the plasma is extracted from the region.
      As the residual charge is removed, the voltage increase further and diode charges
       again.
     At some point the diode is charged fully and maintains a constant voltage across it while
      current drops down.
     When current comes back the cycle repeats.
VI Characteristics of TRAPATT diode
     The voltage and current waveforms for a avalanche TRAPATT diode is shown in figure
      below.
     The invention of the transistor (contraction for transfer resistor) by William Shock-ley.
      and his coworkers at Bell Laboratory in 1948 had a revolutionary impact on electronic
      technology in general and on solid-state devices in particular.
    Since then transistors and related semiconductor devices have replaced vacuum
      tubes for lower-power sources. Microwave power transistor technology has advanced
      significantly during the past three decades.
    The microwave transistor is a nonlinear device, and its principle of operation is similar to
      that of the low-frequency device, but requirements for dimensions, process control, heat
      sinking, and packaging are much more severe.
    For microwave applications, the silicon (Si) bipolar transistors dominate for
      frequency range from UHF to about S band (about 3 GHz).
    As the technology improves, the upper frequency limit for these devices is
      continuously being extended, and at the present time the devices are capable of
      producing useful power up to 22 GHz.
Physical Structures
  All microwave transistors are now planar in form and almost all are of the silicon
    N-p-n type. The geometry can be characterized as follows: (a) interdigitated, (b)
    overlay, and (c) matrix (also called mesh or emitter grid) as shown in below Fig.
    The interdigitated type is for a small signal and power, but the overlay type and
     Matrix type are for small power only.
    For high-frequency applications, the n-p-n structure is preferred because the electron
     mobility (µ,n = 1500 cm2/V · s) is much higher than the hole mobility (µ,p = 450
     cm2/V · s). The above figure shows an example of the densities for an n-p-n transistor.
    The density unit is in cm2/V · s. Although there are many ways of fabricating a transistor,
     diffusion and ion implantation is generally used.
    For example, the structure would typically start with a lightly doped n-type epitaxial layer
     as the collector. The base region would be formed by counter-doping the base region p-
     type by diffusion.
Principles of Operation:
The bipolar junction transistor (BJT) is an active three-terminal device which is commonly
used as an amplifier or switch. Its principles of operation are discussed in this section. Modes
of operation. A bipolar transistor can operate in four different modes depending on the
voltage polarities across the two junctions: normal (active) mode, saturation mode, cutoff
mode, and inverse (or inverted) mode.
1. Normal Mode. If the emitter junction of an n-p-n transistor is forward-biased and the
   collector is reverse-biased, the transistor is operated in the normal mode The term
   forward bias means that the positive polarity of the bias voltage is connected to the p
   side and the negative polarity to the n side for a p-n junction; the opposite obtains for
   reverse bias. Most transistor amplifiers are operated in normal mode, and its common-
   base current gain alpha is known as the normal alpha αN.
2. Saturation Mode. When both transistor junctions are forward-biased, the transistor is
   in its saturation mode with very low resistance, and acts like a short circuit.
3. Cutoff Mode. If both transistor junctions are reverse-biased the transistor is operated
   in its cutoff mode. As the current is cut off, the transistor acts like an open circuit. Both the
   cutoff and saturation modes of a transistor are used as switching devices for the OFF
   and ON states.
4. Inverse Mode. When the emitter is reverse-biased and the collector is forward-biased,
   the transistor is operated in the inverse (or inverted) mode, and its current gain is
   designated as the inverse alpha a1. If the transistor is symmetric, the normal alpha
   αN is nearly equal to the inverse alpha a1. The two current gains, however, are not
   actually equal because of their unequal doping. In practice, the inverse mode is not
   commonly used except as a multiemitter transistor in TTL (transistor-transistor logic)
   logic gate.
      In many cases a high resistivity GaAs epitaxial layer, called the buffer layer, is
       grown between the n-type GaAs layer and the substrate. The photolithographic
       process may be used to define the patterns in the metal layers such as Au-Ge for
       source and drain ohmic contacts and in the Al layer for the Schottky barrier-gate
       contact.
      The reason for using GaAs instead of Si is that GaAs has higher electron mobility and
       can operate at higher temperature and higher power.
Principles of Operation
      a voltage is applied in the direction to reverse-bias the p-n junction between the
       source and the gate, while the source and the drain electrodes are forward-biased.
      Under this bias condition, the majority carriers (electrons) flow in then-type epitaxial
       layer from the source electrode, through the channel beneath the gate, to the drain
       electrode. The current in the channel causes a voltage drop along its length so that
       the Schottky barrier-gate electrode becomes progressively more reverse-biased toward
       the drain electrode.
      So does the height of the charge-depletion region. The decrease of the channel height in
       the nonpinched-off region will increase the channel resistance.
 Consequently, the drain current Id will be modulated by the gate voltage VR.
      In other words, a family of curves of the drain current Id versus the voltage Vd,
       between the source and drain with the gate voltage VR as a parameter will be
       generated in an unipolar GaAs MESFET,
Pinch-off voltage Vp. The pinch-off voltage is the gate reverse voltage that removes all the
free charge from the channel. Poisson's equation for the voltage in the n channel, in
terms of the volume charge density is given by
     The two cavity reflex klystron is a widely used microwave amplifier operated by the principle
of velocity modulation and current modulation
            Fig.: Schematic diagram of two cavity Reflex klystron oscillator
Mechanism of operation
  1. All the electrons injected from the cathode arrive at the first cavity with uniform velocity.
      These electrons passing at the cavity gap at zeros of the gap voltage(or) signal voltage
      pass through unchanged velocity.
  2. Those passing through the positive half cycles of the gap voltage undergo an increase in
      the velocity.
  3. Those passing through the negative swings of the gap voltage undergo a decrease in
      velocity. As the result of these actions, the electrons gradually bunch together as they
      travel down the drift space is known as velocity modulation.
  4. The electron beam modulated to form bunches (or) undergoes density modulation in
      accordance with the input RF cycle.
  5. While passing through the catches cavity grid, this density modulated electron beam
      induces RF current in the output cavity and thereby excite the RF field in the output
      cavity at input signal cycle.
  6. The phase of field in the output cavity is opposite to that of the input cavity so that the
      bunched electrons are retarded by the output gap voltage. The loss of kinetic energy of
      the electrons on retardation process transfers RF energy to the output cavity
      continuously at signal.
      The electrons then emerge from the second cavity with reduced velocity and finally
       terminate at the collector.
      The characteristics of a two cavity klystron amplifier are as follows:
Power Output –
       The average power (CW power) is upto 500 KW at        10 GHz.
       The pulsed power is upto 30 MW at 10 GHz
Velocity Modulation
        When the electrons are first accelerated by the high DC voltage V0before entering
          the buncher grids . Their velocity is uniform.
                             𝟐𝒆𝑽𝟎
                    𝒖𝟎 = √    𝒎
                                    = 5.93×105 √𝑽𝟎 ms-1      ------------ (1)
        Let the signal voltage across the gap be V1𝐬𝐢𝐧 𝝎𝒕.
        Let t1 = Time taken by the electron beam to enter the buncher cavity (or) the input
         cavity with velocity V0.
         t2 = Time taken by the electron beam to pass out from the buncher cavity.
        The transit time and transit angle through the transit gap is
                                     𝒅
                             𝒕𝒈 = 𝒖                           ----------- (2)
                                      𝟎
   Transit angle,
                              𝝎𝒕𝒈 = 𝜽𝒈                          ---------(3)
               Due to input RF signal in the buncher cavity, the average RF voltage in the buncher
                gap can be obtained as,
                                                                𝑡2
                                                        1
                                                   𝑉𝑎𝑣 = ∫ 𝑉1 sin 𝜔𝑡 𝑑𝑡
                                                        𝑡𝑔
                                                               𝑡1
                                              𝑉1 − cos 𝜔𝑡 𝑡2
                                         =    𝜃𝑔
                                                 [ 𝜔 ]
                                                          𝑡1
                                              𝑉1 (− cos 𝜔𝑡2 + cos 𝜔𝑡1 )
                                         =
                                                         𝜃𝑔
                                              𝑉1 cos 𝜔𝑡1 −𝑉1 cos 𝜔𝑡2
                                    ∴ 𝑉𝑎𝑣 =                                              ---------- (4)
                                                        𝜃𝑔
Let
                  𝜃𝑔
      A = 𝜔𝑡1 +   2
           𝜃𝑔
      B=   2
      Also,        A+B = 𝜔𝑡1 + 𝜃𝑔
      A-B = 𝜔𝑡1
      We know that,                           𝜔𝑡𝑔 = 𝜃𝑔
      𝜔(𝑡2 − 𝑡1 ) = 𝜃𝑔
      𝜔𝑡2 = 𝜃𝑔 + 𝜔𝑡1
                                                  𝑉1
                                        𝑉𝑎𝑣 =        [cos 𝜔 𝑡1 − cos 𝜔 𝑡2 ]
                                                  𝜃𝑔
                                              𝑉
                                     𝑉𝑎𝑣 = 𝜃1 [ cos 𝜔 𝑡1 −             cos(𝜃𝑔 + 𝜔𝑡1 )]
                                              𝑔
                                                             𝑉1 𝛽1          𝜃𝑔
                                                2𝑒𝑉0 (1+           sin(𝜔𝑡2 − ))
                                              =√
                                                              𝑉0             2
                                                                 𝑚
                   𝑉1 𝛽1
   The factor               is known as depth of modulation.
                    𝑉0
   If the modulation amplitude is very small (<<<1), then
                                                  𝑉1 𝛽1                  𝜃𝑔
                               𝑢(𝑡2 ) ≅ 𝑢0 (1 +    2𝑉0
                                                        sin (𝜔𝑡2   −      2
                                                                              ))           ----------- (8)
                   𝑉1 𝛽1
   The factor               is represented as m.
                    𝑉0
                                                        𝑚                         𝜃𝑔
                                    𝑢(𝑡2 ) ≅ 𝑢0 (1 +      sin (𝜔𝑡2        −            )) ------- (9)
                                                        2                         2
    Because of the difference in velocities of electrons in the velocity modulated beam, the
electron will form bunches ie., becomes density modulated, in accordance with input cycle. A
maximum degree of bunching takes place when the buncher and catcher cavities are spaced to
satisfy the condition,
                                                      𝐿
                                     𝑡𝑑 = 𝑡3 − 𝑡2 =
                                                    𝑢(𝑡2 )
From (11),
                                                       𝑚                      𝜃𝑔
                              𝑡𝑑 = 𝑡3 − 𝑡2 = 𝑡0 (1 −   2
                                                         sin (𝜔𝑡2        −        2
                                                                                      ))           ---- (12)
The corresponding transit angle in the drift space L is,
                                  ω 𝑡𝑑 = ω(𝑡3 − 𝑡2 )                            (From equation (12))
                                    𝑚           𝜃
                         = 𝜔𝑡0 (1 − sin (𝜔𝑡2 − 𝑔 ))
                                    2           2
                                   𝑚𝜃0           𝜃𝑔
                        ω 𝑡𝑑 = 𝜃0 − 2 sin (𝜔𝑡2 − 2 )                  ------------ (13)
The klystron is generally tuned to the fundamental AC component of current and it is given by,
                                𝜃𝑔
    𝑖𝑏 = 2𝐼0 𝐽1 (𝑋)cos (𝜔𝑡2 −        )                            ------------ (16)
                                2
Power Output:
    The fundamental component of RF beam current passing through the output cavity gap
induces a current in the catcher cavity.
                                                            𝑖𝑐 = 𝛽2 |𝑖𝑏 |
    Where 𝛽2 → beam coupling coefficient of catcher cavity.
                                         𝑖𝑐 = 𝛽2 .[2𝐼0 𝐽1 (𝑋)]
   I2
   Therefore,
                                   𝑖𝑐 = 𝛽2 I2
    If the buncher and catcher cavities are identical, then 𝛽0 = 𝛽1 = 𝛽2
    ∴                                𝑖𝑐 = 𝛽0 I2
The output power delivered to catcher cavity is,
                                                     (𝛽0 𝐼2 )2 𝑅𝑠ℎ
                                             𝑃𝑜𝑢𝑡 =
                                                           2
                                                 (𝛽0 𝐼2 )[(𝛽0 𝐼2 )𝑅𝑠ℎ ]
                                         𝑃𝑜𝑢𝑡 =
                                                           2
                                                      (𝛽0 𝐼2 ) 𝑉2
                                              𝑃𝑜𝑢𝑡 =
                                                           2
Efficiency: 𝜼
    The electronic efficiency of klystron amplifier is defined as the ratio of the output power to
    the input power.
                                                        𝑃𝑜𝑢𝑡
                                               𝜂=
                                                   𝑃𝑑𝑐 (𝑜𝑟)𝑃𝑖𝑛
                                                    (𝛽0 𝐼2 ) 𝑉2
                                                𝜂=
                                                      2𝐼0 𝑉0
    If the coupling co-efficient is perfect ie.,𝛽0 = 1 and 𝑉2 = 𝑉0, then there is maximum beam
    current in the catcher cavity.
                                                    2𝐼0 𝐽1 (𝑋)
                                                𝜂=
                                                        2𝐼0
                                              𝜂 = 0.582 × 100
                                                 𝜂 = 58.2%
    The maximum electronic efficiency of two cavity reflex klystron is 58.2 %
Mechanism of Oscillation
  1. Due to d.c. voltage in the cavity circuit, RF field is generated in the cavity. The electrons
     passing through the cavity gap‘d’ experience this RF field and are velocity modulated in
     the following manner.
  2. Electrons as shown in fig. below which encountered the positive half cycle of the RF field
     in the cavity gap ’d’ will be accelerated, the electrons at ‘b’ which encountered zero RF
     field will pass with unchanged original velocity and the electrons at ‘c’ which
     encountered the negative half cycle will be retarded on entering the repeller space.
                   Fig.: Schematic diagram of Reflex klystron oscillator
   3. All these velocity modulated electrons will be repelled back to the cavity by the repeller
        due to its negative potential. Repeller distance L and the voltages can be adjusted to
        receive all the velocity modulated electrons at the same time on the positive peak of the
        cavity RF voltage cycle.
   4. Thus the velocity modulated electrons are bunched together and lose their kinetic energy
        when they encounter the positive cycle of the cavity RF field. This loss of energy is thus
        transferred to the cavity to conserve the total power.
   5. If the power delivered by the bunched electrons to the cavity is greater than the power
        lose in the cavity, the electromagnetic field amplitude at the resonant frequency of the
        cavity will increase to produce microwave oscillations.
Bunching of Electrons
   The reference electron is taken as one that passes the gap on its way to the repeller at
      the time when the gap voltage is zero and going negative. This electron overshoots the
      gap and return to it with some distance penetrated into the repeller.
   An electron passing the gap slightly earlier will have slightly positive voltage at the gap.
      The resulting acceleration would have propelled this electron slightly farther into the
      repeller space, and the electron would have taken slightly longer time than reference
      electron to return to the gap.
   Similarly electron passing after reference electron will have slightly negative voltage.
      Thus bunching of electrons takes place.
Applegate Diagram
   Applegate diagram of Reflex Klystron is shown in figure below:
M o d e s a n d e f f i c i e nc y considerations:
Modes of oscillations
   The condition for oscillation
     to=(n+¾)T=NT
     N=n+¾, n=0, 1, 2…
     Where, N=n+3/4 and n=0,1,2,3,……
                                   𝑉𝑜        1 1       𝑒          𝜋 2
                                           =  .      .   . (2𝜋𝑛 −   )
                               (𝑉𝑅 − 𝑉𝑜 )2   8 𝜔 2 𝐿2 𝑚           2
Where, V0 – anode voltage
      VR – repellervoltage
      L – Distance between cavity gap and repeller electrode.
Output Power
                                       𝟐𝑽𝒐 𝑰𝒐 𝑋 ′ 𝐽1 (𝑋 ′ )                 𝒆
                             𝑷𝒐𝒖𝒕 =                         . (𝑉𝑅 − 𝑉𝑜 ). √
                                            𝝎𝑳                             𝟐𝒎𝑽𝒐
                                                       𝟎. 𝟑𝟗𝟖𝟔 𝑽𝒐 𝑰𝒐
                                     𝑷𝒐𝒖𝒕 𝒐𝒓 𝑷𝑹𝑭 =
                                                            𝑵
Efficiency of Reflex Klystron
                                        𝟐𝑿′ 𝑱𝟏 (𝑿′ )        𝟎. 𝟑𝟗𝟖𝟔
                                   𝜼=            𝝅 𝒐𝒓 𝜼 =
                                       (𝟐𝝅𝒏 − 𝟐 )               𝑵
Where, J1(X) is Bessel function of 1st order for argument X.
The factor 𝑋 ′ 𝐽1 (𝑋 ′ ) reaches maximum value of 1.252 at 𝑋 ′ = 2.408 and 𝐽1 (𝑋 ′ ) = 0.52.
                                              Fig. Magnetron
       Radial electric field is established by dc voltage𝑽𝟎 in between cathode and anode and
        dc magnetic flux denoted by 𝛽0 is maintained in positive Z-direction by means of a
        permanent (or) electromagnet.
          There are three forces acting on an electron in the interaction region of the magnetron,
                       force due to electric field (-eE)
                       force due to magnetic field [-e (V× 𝑩)]
                                                     𝒎𝒗𝟐
                        centrifugal force (          𝒓
                                                         )
          The electrons emitted from the cathode try to travel towards anode.
       At zero magnetic field, the electron takes the straight path a by the influence of electric
        field only.
     For a given𝑽𝟎 , if the magnetic field is increased, the electrons take curved path b to
        reach the anode.
     At a critical value of magnetic field Bc, the electrons just graze the anode surface and
        return to the cathode for a given voltage 𝑽𝟎 .The value B c is called the cut-off magnetic
        flux density.
     If the magnetic field is greater than Bc, all the electrons return to the cathode by a typical
        path X without reaching the anode.
At the equilibrium condition,
𝑚𝑣 2
 𝑟
           +      𝑒𝐸    =       𝑒𝑉𝐵                   ------------- (1)
Let b be the radius from the centre of the cathode to the edge of the anode.
                  𝒅𝒓
At r=b, V= V0 , 𝒅𝒕 =0 , the electron just grazes the anode.
                                                   𝑑∅ 2
                               𝑣0 2 = 𝑏 2 ( 𝑑𝑡 )                             ------------ (10)
From equation (8),
                                        2𝑒𝑉0
                            𝑣0 2 =       𝑚
                                                                                   ------------ (11)
Comparing (10) and (11),
                                                     2𝑒𝑉0       𝑑∅ 2
                                                          = 𝑏2 ( )
                                                      𝑚         𝑑𝑡
                                                                                        2
                                                   2𝑒𝑉0        2    𝜔           𝑎2
                                                    𝑚
                                                          =𝑏       ( 2 (1   −   𝑏2
                                                                                   ))               ------------- (12)
               𝑒𝐵
Substituting   𝑚
                    =𝜔,
                                                                                   2
                                             2𝑒𝑉0        𝑒𝐵     𝑎2
                                                  = 𝑏2 [    (1 − 2 )]
                                              𝑚         2𝑚      𝑏
                                                                                   2
                                             2𝑒𝑉0      (𝑒𝐵)2      𝑎2
                                                  = 𝑏2       (1 −    )
                                              𝑚         4𝑚2       𝑏2
                                                                               2
                                        8𝑚2 𝑒𝑉0                         𝑎2
                                          𝑚
                                                     = 𝑏 2 (𝑒𝐵)2 (1 − 𝑏2 )
                                       8𝑚𝑒𝑉0
                                                 2   = 𝐵2
                                             𝑎2
                                   𝑒 2 𝑏2 (1− 2 )
                                             𝑏
                                                                  𝑚
                                                             8𝑉0 ( 𝑒 )
                                                      2
                                                  𝐵 =                    2
                                                                      𝑎2
                                                           𝑏 2 (1 −      )
                                                                      𝑏2
At the critical magnetic field, Bc= B
                                        1
                                      𝑚
                                  (8𝑉0 )2
                                      𝑒
                           𝐵𝑐 =       𝑎2
                                                                             ------------ (13)
                                  𝑏(1− 2 )
                                      𝑏
Thus if applied magnetic field B is greater than Bc for a given 𝑉0 , the electron will not reach the
anode.
For a given B0, the cut off voltage is given by,
                       2
      𝑒           𝑎2
𝑉𝑐 2 = 8 𝑚𝑏 2 (1 − 𝑏2 ) 𝐵2             ------------ (14)
If V0< V c, for a given B, the electron will not reach the anode. Equations(3)and(14) for BcandVc
called Hull- cut off magnetic and voltage equation, respectively.
RF Structure of Magnetron:
    Magnetron structure supports varieties of modes depending upon the phase difference
      between fields in two adjacent cavities.
    Boundary conditions are satisfied when total phase shift around the 8 cavities is a
      multiple of 2π radians.
    The phase shift between the fields of adjacent cavities is π radians. This is known as π
      mode. Magnetron oscillators operated in π mode. [∅𝑛 = π mode]
    Frequency of π –mode can be easily separated from adjacent modes by incorporating
      conducting straps connected to alternate segment of anode block.
Mechanism of oscillations
    The electron beams a come across an electric field in the direction of its velocity. It is
      retarded by the field, slow down and drifts towards the anode values of the static E and
      H fields are so adjusted that the time the electron reaches near the second cavity.
    Last a time period elapses, The electron experiences a retarding field again and loses
      energy to the RF field. This process continues the transfer of energy takes place again
      near the third cavity.
Helix TWT:
      The travelling wave tube is an amplifier which makes use of a distributed interaction
       between an electron beam and a travelling wave.
      The travelling wave tube (TWT) is an O-type parallel field, linear beam device, but it
       differs from the Klystron in that the RF field and the electron beam interact with each
       other over the entire length of the active region, instead of only at the cavity gaps.
      Although TWTs exists that use resonant cavities, most TWTs are non-resonant devices
       and hence have wider bandwidths than Klystrons.
Construction
   The TWT contains an electron gun, which produces and then accelerates an electron
      beam along the axis of the tube.
   The surrounding static magnet provides a magnetic field along the axis of the tube. The
      focus the electrons into a tight beam.
   A longitudinal helix slow wave non-resonant guide is placed at the center of the tube.
   The RF input and output are coupled into and removed from the helix by directional
      couplers that have no physical connection to the helix.
   The TWT is designed with helix delay structure to slow the travelling wave down to or
      below the speed to the electrons in the beam.
   The electrons of the beam are accelerated to travel faster than the waves travelling on
      the helix wire through the velocity modulation caused by the interaction between the
      travelling wave fields and the electron beam.
   This effect results in bunching and the electrons give up energy to the travelling wave
      when the fields of the correct polarity slow down the bunches.
                              Fig; TWT Tube and Circuit
   The energy from the bunches increase the amplitude of the travelling wave in a
    progressive action that takes place all along the length of the TWT.
   The RF signal injected at the input end of the helix travels down the helix wire at the
    speed of light, but the coiled shape causes the wave to travel a much greater total
    distance than the electron beam.
   Changing the number of turns in the helix wire, the speed at which the RF signal wave
    travels in the form of axial E field down the tube, can be varied.
   DC beam voltage is adjusted so that beam velocity is slightly greater than that of the
    axial field. The helical delay structure has the added advantage of causing a large
    portion of electric fields that are parallel to the electron beam provides maximum
    interaction between the fields and the electron beam to form bunching.
   As the electron bunches release energy to the signal on the helix, amplification begins.
       The initial amplified signal causes the denser electron bunch which in turn, amplifies the
       signal even more. This process continues as the RF wave and the electron beam travel
       down the length of the tube. When the loss in the system is compensated by this energy
       transfer, a steady amplification of the microwave signal appears at the output end.
      An attenuator is placed over a part of the helix on midway to attenuate and reflected
       waves generated due to impedance mismatch that could be fed back to the input to
       cause oscillations.
      The attenuator is placed after sufficient length of the interaction region so that the
       attenuation of the amplified signal is insignificant compared to the amplification.
     The internal attenuator reduces the gain of the tube. The TWT also produces heat which
      must be dissipated by either air-conditioning or liquid-cooling systems.
Analysis of TWT
      If d dis the diameter of the helix and p is the pitch, the time taken by signal along the
       wire must be equal to that taken by the axial wave, so that
                                       𝒑    √𝒑𝟐 + (𝝅𝒅)𝟐
                                    𝑻=   =
                                      𝒗𝒑         𝒄
                                         𝒄𝒑        𝒄𝒑   𝝎
                                𝒗𝒑 =             =    =
                                     √𝒑𝟐 + (𝝅𝒅)𝟐   𝝅𝒅   𝜷
Gain in TWT
    The gain in TWT is proportional to the length of the slow wave structure and is found
       from
                                            𝟒𝟕. 𝟑 𝑭𝑳 𝟑 𝟏𝑲
                             𝑮𝒂𝒊𝒏(𝒅𝑩) = [            √ ] − 𝟗. 𝟓𝟒
                                             𝟐𝝅𝑽𝒐      𝟒𝑽
Where, F – RF frequency in hertz
      Vo – Electron Velocity
      K – Helix impedance in ohms
      V – applied dc voltage
      I - Dc current
Applications of TWT
    Low noise tubes are used in RF amplifiers in broadband microwave receivers.
    Medium and high power satellite transponder output.
    CW radar and radar jamming
                                        UNIT-II S Parameters:
Scattering parameters:
properties of S matrix:
        If only I the port is executed and all other ports are matched terminated, all an=0 except
        ai, so that,
                                       ∑𝑁           2
                                        𝑛=1|𝑆𝑛𝑖. 𝑎𝑖| =         ∑𝑁
                                                                𝑛=1|𝑎𝑛|
                                                                       2
                                              ∑𝑁
                                               𝑛=1|𝑆𝑛𝑖|
                                                       2
                                                                  =   1
                                              ie∑𝑁
                                                 𝑛=1 𝑆𝑛𝑖. 𝑆𝑛𝑖 ∗ = 1
       The above equation states that for a lossless network the product of any column of the
       scattering matrix with the conjugate of this column equals UNITY.If all an=0 except ai&ak
                                       ∑𝑁
                                        𝑛=1 𝑆𝑛𝑘. 𝑆𝑛𝑖     = 0 ; for i≠k
       This equation states that the product of any column of the scattering matrix with the
       complex conjugate of any other column is zero.In matrix notation, the relations are
       expressed as
                                              [S*] [S]t = [U]
                                              [S*]     = [𝑆𝑡]−1
       [U]= Unit matrix. A matrix [S]for lossless network which satisfies the above three
       conditions is called unitary matrix.
Shifting of reference planes in two port network
                  (
                      𝑏1         0
                         ) = ( −𝑗𝛽2           𝑒 −𝑗𝛽1 𝑙1) . (𝑎1)                (for lossless network)
                      𝑏2            𝑙2                      𝑎2
                              𝑒                   0
                               (
                                   𝑏1
                                      )           0
                                             = ( −𝑗𝛷2      𝑒 −𝑗𝛷1 ) . (𝑎1 )
                                   𝑏2           𝑒             0        𝑎2
   Where, l1 l2 = path length.
β 1 β 2 =phase constant.
       This property is valid for any number of ports and is called the phase shift property
       applicable to shift of reference planes. The resultant 𝑆 1 MATRIX is
                                     −𝑗𝛷1                               −𝑗𝛷1
                        (𝑆 1 ) = ( 𝑒             0      ) . (S) . ( 𝑒             0 )
                                      0        𝑒 −𝑗𝛷2                   0      𝑒 −𝑗𝛷2
(4.) Zero property of S matrix
       The sum of products of each term of any column (or row) multiplied by the complex
       conjugate of the corresponding terms of any other column(or row) as zero and as
                                     S11 𝑆12∗ + S21 𝑆22∗ = 0
                                      b1 = S11 a1 + S12 a2
                                      b2 = S21 a1 + S22 a2
The waveguide tees are 3 port components and are mainly of two types E-plane tee connected
in series and H-plane tee connected in shunt with section or branch of main waveguide
transmission line.
      Tees are junctions having three or more ports. Waveguide tees are used for the purpose
       of connecting a branch section of waveguide in series or parallel with main waveguide.
      There are E or H- plane tees depending on whether they are in the plane of electric field
       or magnetic field. Because of junctions waveguides tees are poorly matched device. For
       matching reactance, tuning screws are used.
E-Plane Tee
      All the arms of E-plane tee lie in the plane of electric field which divide among the arms
       as shown in figure below:
      Scattering matrix [S] of E-plane tee is 3x3 matrixes since there are 3 ports.
                                            𝑆11 𝑆12 𝑆13
                                     [𝑆] = [𝑆21 𝑆22 𝑆23]
                                            𝑆31 𝑆32 𝑆33
      When port 3 is perfectly matched S33 = 0
𝑆13 = 𝑆31 = 1⁄√2and𝑆23 = 𝑆32 = − 1⁄√2
Effects of reflections
 1. Only a portion of the power that approaches the junction through port-3 or 4 is delivered to
       port-1 and 2.
 2. Power is not divided equally between port-1 and 2, when power enters through port-3 or 4
 3. Balance does not exist between port-1 and 2 i.e some power transmits directly from port-1
       to port-2.
                                            0 𝑆12     0 𝑆14
                                           𝑆21  0     𝑆23 0
                                   [𝑆] = [                  ]
                                            0 𝑆32     0 𝑆34
                                           𝑆41 0      𝑆43 0
   It should be noted that the phase cancellation occurs only at a designated frequency
for an ideal hybrid ring. In actual hybrid rings there are small leakage couplings, and
therefore the zero elements in the matrix of Eq. are not quite equal to zero.
   These waveguide components are normally used to change the direction of the guide
through an arbitrary angle. In order to minimize reflections from the discontinuities, it is
desirable to have the mean length L between continuities equal to an odd number of
quarter-wave-lengths.
Fig Waveguide corner, bend, and twist. (a) E-plane corner. (b) H-plane corner. (c) Bend.
(d) Continuous twist.
                                                 λg.
                        That is, 𝐿 = (2𝑛 + 1)         )
                                                  4
    In a directional coupler all four ports are completely matched. Thus the diagonal elements
of the S matrix are zeros and
                              S11=S22=S33=S44=0
As noted, there is no coupling between port 1 and port 3 and between port 2 and port
4. Thus
                              S13=S31=S24=S42=0
Consequently, the S matrix of a directional coupler becomes
                                              0 𝑆12          0 𝑆14
                                      [𝑆] = [ 𝑆21 0          𝑆23 0
                                                                   ]
                                              0 𝑆32          0 𝑆34
                                             𝑆41 0           𝑆43 0
Equation can be further reduced by means of the zero property of the S-matrix , so we have
                                             S12 S14*  S32 S34*  0
                                             S 21S 23*  S41S43*  0
S12  S34  p
                                                p  S23
                                                     *
                                                         S41   0
Let
                                                 S23  S41  jq
p2  q2  1
                                             0        p     0        jq 
                                             p        0     jq       0 
                                           S
                                             0        jq    0        p
                                                                        
                                              jq      0     p        0
Circulators:
         A microwave circulator is a multiport device n which power is circulated from nth port to
          (n+1)th port only in one direction.
         A four port circulator is most commonly used. Figure shows a four port circulator
                                             Fig; Circulator
       Circulator is a non-reciprocal component. All the four ports are matched and transmission
of power takes place in cyclic order only. An ideal circulator is perfectly lossless.
Principle of Operation
        A three port circulator is symmetrical Y type junction of three identical waveguides with
         an axially magnetized ferrite post placed at the center. Figure shows a typical three port
         circulator.
        The ferrite post is magnetized by static Bo field along the axis. It provides the necessary
         non reciprocal property. The junction can be matched by placing suitable tuning element
         in each arm.
        It is an essential component used to isolate the input and output in negative resistance
         amplifier. Three port circulators are also used to couple a transmitter to various
         receivers.
        Power entering port-1 travels along the magnetized ferrite. The direction of the field
         vector gets rotated by 45o.Therefore power entered at port-1 appears at port-2.
        The power cannot be coupled to port-4 because ports-2 and 4 are 90o out of phase.
         Similarly, port-3 is coupled to port-4 and port-4 to port-1.
S-matrix of Circulator:
It matrix is given by
                       S11     S12          S13
              [S]=    S21      S22          S23                 ---------(1)
                       S31     S32           S33
As its properly matched function,
[ S ] [ S*]=1
Thus,
                                                   0   0 1
                                            [𝑆] = [1   0 0]
                                                   0   1 0
Applications of Circulator
       Isolation of transmitters and receivers connected to same antenna e.g. in radar system.
       Isolation of input and output in two terminal amplifying devices e.g. parametric amplifiers.
Isolators:
     Isolator is a non-reciprocal ferrite transmission device. Isolators are generally used to
        improve the frequency stability of microwave generators.
       Isolators transmits electromagnetic wave only in one direction, the reflected wave is
        attenuated (absorbed). Thus microwave generating active devices are isolated.
       An ideal isolator completely absorbs power of propagation in one direction and provides
        loss less transmission in the opposite direction.
       The Faraday rotation provides 1 dB insertion loss in forward transmission and about 20
        to 30 db isolation in reverse direction.
                                             Fig Isolators
      Let the incident wave has E in x-direction when it propagates through ferrite rod, it is
       rotated by 45o. It is launched into waveguide which is at 45o.
      Reflected wave from load travels in reverse direction and is again rotated by 45o by
       ferrite rod. Reflected E appearing at resistive vane-1 is in Y-direction and it is completely
       attenuated.
      The performance of an isolator is measured in terms of two basic parameters.
                                           [S] = [0 0]
                                                  1 0
Application of Isolator
      In Klystrons and Magnetrons to improve the frequency stability.
Microwave Measurements: VSWR
VSWR stands for Voltage Standing Wave Ratio, and is also referred to as Standing Wave
Ratio (SWR). VSWR is a function of the reflection coefficient, which describes the power
reflected from the antenna.
       Two commonly method used methods for measuring VSWR are:
        1. Slotted Line Technique – for Low VSWR(S < 20)
        2. Double Minimum Method – for High VSWR(S > 20)
       When load impedance is not equal to source impedance, standing waves are produced.
        By inserting a slotted line section in the transmission line, standing waves can be traced
        by moving the carriage with a tunable probe detector along the line.
       VSWR can be measured by detecting Vmax and Vmin in the VSWR meter:
                                          S=Vmax / Vmin
       The setup for measuring VSWR using slotted line technique is shown in the figure
        below:
                                                                                    Matched
                                                                                   Termination
          Fig: Slotted Line Method of VSWR Measurement - Basic Experimental Setup
       The variable attenuator is adjusted to 10dB. The microwave source is set to required
        frequency. The 1 KHz modulation is adjusted for maximum reading on the VSWR meter
        in a 30dB scale. The probe carriage stub is tuned for maximum detected signal in VSWR
        meter.
       The probe carriage is slided along the non-radiating slot from the load end until a peak
        reading is obtained in VSWR meter. The meter’s gain control is adjusted to get the meter
        reading at 1.0 or 0dB corresponding to the position of voltage maximum.
       The probe is moved towards the generator to an adjacent voltage minimum. The
      corresponding reading in VSWR meter directly gives the VSWR = Vmax / Vmin on the
      top of SWR normal scale for 1≤S≤4 or on the Expanded scale for 1≤S≤1.33.
     The experiment is repeated for other frequencies as required to obtain a set values of S
      Vs f.
     For VSWR between 3.2 and 10, a 10dB lower range should be selected and reading
      corresponding to Vmin position should be taken from the second VSWR normal scale
      from the top.
     Power is defined as the quantity of energy dissipated or stored per unit time. The range
      of microwave power is divided into three categories – low power(less than 10mW),
      medium power (from 10mW to 10W) and high power (greater than10W).
     The average power is measured while propagation in a transmission medium and is
      defined by,
                                             1 nT
                                    Pav =     ∫ v(t)i(t)dt
                                            nT 0
      Where, T is the time period of the lowest frequency involved in the signal and n cycles
      are considered. For pulsed signal
                                              1 τ
                                    Ppeak =    ∫ v(t)i(t)dt
                                              τ 0
                                   Pav = Ppeak ∗ Duty Cycle
                      Duty cycle = pulse width ∗ p. r. f. d = τfr = τT < 1
      Where τ is the pulse width, T is the period and fr is the pulse repetition frequency. The
      most convenient unit of power at microwaves is dBm.
                                                     P(mW)
                                   P(dBm) = 10 log
                                                      1mW
                           viz. , 30 dBm = 1W and − 30 dBm = 1μW.
     The sensors are used for power measurements are the schottky barrier diode, bolometer
      and the thermocouple.
Impedance scattering parameters:
Impedance can be measured by the following two methods:
         i.      Slotted Line Method
        ii.      Impedance measurement
Slotted Line Method:
               For high frequencies, the impedance will be complex. The complex impedance ZL
                 of the load can be measured by measuring the phase angle фL of the complex
                 reflection co-efficient ГL from the distance of first voltage standing wave minimum
                 (dmin) and the magnitude of the same from the VSWR,S.
               The equation below gives the relation between the load impedance and the
                 reflection co-efficient for the computation of ZL.
                                                              1 + ГL
                                                   𝑍𝐿 = 𝑍𝑜
                                                              1 − ГL
                                                                             1−𝑆
                    Where,ГL = ρ𝐿𝑒 𝑗фL and 𝑆 = (1 + ρ𝐿 )(1 − ρ𝐿 ) 𝑜𝑟 ρ𝐿 =    1+𝑆
                                    Tunable Probe
                                      Detector                VSWR Meter
                                                             Unknown
                                    Slotted line
                                                             load or short
                 2. Move the probe position of the SWR, to a minimum and note down the Verne
                    reading (d1).
3. Also note down the corresponding SWR value (S) on the SWR meter.
4. Remove the load and connect only the tunable detector or movable short.
                 5. Move the probe position of SWD carefully in any one direction and note down
                    the Vernier reading (d2) for two successive minima d1 and d2.
   6. Calculate the guide wavelength, λg as, λg= 2×distance between successive
       minima i.eλg = 2(d1-d2)and 𝛽 = 2𝜋⁄λg
   8. The unknown impedance of the load is the calculated from the above said
       relation,
                                                  1 + ГL
                                       𝑍𝐿 = 𝑍𝑜
                                                  1 − ГL
      The dielectric constant εr is defined by the permittivity ε of the material with respect to
       that εo of air or free space
                                                         10−9 𝑓𝑎𝑟𝑎𝑑
                                      εr = ε⁄εo , εo = (     )
                                                         36𝜋    𝑚
      Due to presence of non-zero conductivity, dielectric material exhibits loss resulting in
       complex value represented by,
                                            εr = ε′ r + jε′′ r
Waveguide Method
      In this method it is assumed that the material is lossless. A dielectric sample AB
       completely fills a length of the waveguide and the end is terminated in a short as shown
       in figure:
      A voltage standing wave minimum is observed in the slotted line at C (say)
Let,   le = AB = the dielectric sample length
       lo = BC
          Then the distance of Vmin from short circuit = le+lo = AC. For a dielectric filled guide
    of characteristics impedance Ze, input impedance at β is purely reactive,
                         Zin′ = jZe tan βele, where βe is propagation constant
   Using this Zin’ as termination at β, input impedance at C for the empty guide is
                                        Zin′ + j Zo tan βolo
                             Zinc =                          = 0, at Vmin point
                                        Zo + j Zin′ tan βolo
    Therefore,Zin′ + j Zo tan βolo = 0 orjZe tan βele + j Zo tan βolo = 0
    Or, Zo tan βolo = − Ze tan βele
    Assuming nonmagnetic dielectric in the waveguide,
                                                   Zo βe
                                                     =
                                                   Ze βo
                 βe
    Or, Zo = βo . Ze
    Which can be measured by the slotted line, lo and le are also measured in the
    slotted line. Therefore, the left hand side of the above transcendental is known and it
                         tan X
    can be written as      X
                                 = −α
             2π    2π         λo 2
    βe =         =    √[εr − ( ) ] , λc = 2a, where a − waveguide broadwall dimension.
             λge   λo         λc
    Since βe is known, εr. Hence two different lengths of sample are taken for two sets
    of solutions.
    For length le: X = X1, X2… εr = εr1, εr2, …
    For length l’e:X = X1’,X2’,……; ε′r = εr′1, εr′2, …
Antenna radiation pattern and gain measurement:
There are three basic methods that can be used to measure the gain:
   1. Standard Antenna Method
   2. Two antenna method
   3. Three antenna method
1. Standard Antenna Method
      This method uses two sets of measurements with the test and standard gain antennas.
       Using the test antenna of gain Gr in receiving mode, the received power, Pr is recorded
       in a matched recorder.
      The test antenna is then replaced by a standard gain antenna of gain Gs and the
       received power, Ps is again recorded without changing the transmitted power and
       geometrical configuration. Then,
                                             Pr⁄ = Gr⁄
                                                Ps    Gs
                                      Pr
       Or, Gr(dB) = Gs(dB) + 10 log (Ps)
      Thus by measuring the received power with test and standard gain antennas and
       knowing gain Gs of the standard gain antenna, the gain of the test antenna can be
       found.
2. Two Antenna Method
      In this method, the signal is transmitted from a transmitting antenna of gain Gt, and the
       signal is received by the test antenna of gain Gr placed at far-field distance R. The
       received power is expressed by,
                                                    PtGtGrλ2
                                             Pr =
                                                     (4πR)2
                                                          4πR             Pr
                        or, Gr(dB) + Gt(dB) = 20 log (     λ
                                                             )+   10 log ( Pt) ;
Where, Pr is the received power and Pt is the transmitted power. When the two antennas are
selected identical, Gr = Gt so that
                                                    4πR           Pr
                          Gr(dB) = Gt(dB) = 10 log (   ) + 5 log ( )
                                                     λ            Pt
      By measuring R, λ and Pr / Pt, the gain Gr can be determined.
          AM
                          Variable          Directional
       Microwave                                                  Tuner                       Tuner
                         Attenuator          Coupler
        Source
                                                                                   Tx   Rx
                                           Attenuato
                                               r
                                                                                        Power Meter
                                             Power
                                             Meter
      The transmitter, consisting of a light source can effectively convert an electrical input
       signal to an optical signal and lunch the data containing light down the optical fiber.
      A receiver consisting of a photodetector plus amplification and signal-restoring
       circuitry, can effectively detects the optical signal and transform this optical signal
       back into its original form.
      Additional components include optical connectors, splices, couplers or beam splitters
       and repeaters.
Transmitter
      The transmitter is used to launch optical power into the fiber.
      The two types of optical sources are: light-emitting diode(LEDs) and Laser diodes.
      The electric input signals to the transmitter circuitry converts these electric signals to
       an optical signal by varying the current flow through the light source.
      An optical source is a square-law device, which means that a linear variation in drive
       current results in a corresponding linear change in the optical output power.
      In the 800-900 nm region the light sources are generally alloys of GaAlAs. At the
       longer wavelengths (1100 tp 1600 nm), an InGaAsP alloy is the principal optical
       source material.
      After an optical signal has been launched into the fiber, it will become progressively
       attenuated and distorted with increasing distance because of scattering, absorption
       and dispersion mechanisms in the waveguide.
      When an optical signal has travelled a certain distance along the fiber, the signal has
       become attenuated and distorted to such a degree that a repeater is needed in the
       transmission line to amplify and reshape the signal.
      An optical repeater consists of a receiver and a transmitter placed back to back. The
       receiver section detects the optical signal and converts it to an electric signal, which is
       amplified, reshaped and sent to the electric input of the transmitter section.
      The transmitters section converts this electric signal back to an optical signal and
       sends it on down the optical fiber waveguide.
      Finally, The coupler must efficiently transfer themodulated light beam from the source
       to the optic fiber.
Information Channel
      The information channel is the path between the transmitter and receiver.
      The cabled optical fiber is one of the most important elements in an optical fiber link.
       In addition to protecting the glass fibers during installation and service, the cable may
       contain copper wires for powering repeaters which are needed for periodicity
       amplifying and reshaping the signal when the link spans long distances.
      The cable generally contains several cylindrical hair-thin glass fibers, each of which is
       an independent communication channel. Analogous to copper cables, the installation
       of optical fiber cables can be aerial in ducts, undersea or buried directly in the ground.
      Individual cable lengths will range from several hundred meters to several kilometers
       for long- distance applications. The shorter lengths tend to be used when the cables
       are pulled through ducts. Longer cable lengths are used in aerial or direct-burial
       applications.
      The complete long distance transmission line is formed by splicing or connecting
       together these cable sections.
Receiver
    The design of the receiver is inherently more complex than that of the transmitter,
      since it has to both amplify and reshape the degraded signal received by the
      photodetector.
      The ability of a receiver to achieve a certain performance level depends on the
       photodetector type, the effects of noise in the system, and the characteristics of the
       successive amplification stages in the receiver.
      At the receiver the attenuated and distorted modulated optical power emerging from
       the fiber end will be detected by a photodiode.
      Analogous to the light source, the photodetector is also a square-law device since it
       converts the received optical power directly into an electric current
       output(photocurrent).
      Semiconductor pin and avalanche photodiodes (APDs) are the two principal
       photodetectors used in a fiber optical link.
      For low power application optical signal is received an avalanche photodiode is
       normally used, since it has greater sensitivity.
      Silicon photodetectors are used in the 800-900 nm regions. A variety of optical
       detectors are available at the longer wavelengths. The prime material candidate in the
       1100 to 1600 nm region is an InGaAs alloy.
   
The optical carrier frequency in the range of 10¹³ to 10¹⁶ Hz (10¹⁴Tera hertzange) gives a
greater potential transmission bandwidth than metallic cable system.
2. Small Size and Weight:
Optical fiber has a very small diameter (diameter of a human hair) .Hence, even such fibers
are converted with protective coatings they are far smaller and lighter than copper cables.
3. Electrical Isolation:
Optical fiber which are fabricated from glass or plastic polymer are electrical insulators unlike
their metallic counter parts, they do not exhibit earth loop and interface problem. Therefore,
Optical fiber transmission is ideally suited for electrical hazardous environment as the fiber
creates no arcing (or) spark hazard at abrasion (or) short circuits.
4. Immunity to Interference and Crosstalk:
      Optical fiber forms a dielectric wave guide and free from electromagnetic interference
       (EMI), radio frequency interference (RFI) (or) switching transient giving
       electromagnetic pulses (EMP).
      Optical fiber transmission requires no shielding from EMI when it is used in electrically
       noisy environment.
      Fiber cable also not suitable to lightning strikes if used over head rather underground.
5. Signal Security:
      The light from optical fiber doesn’t radiate significantly and therefore likely provide a
       high degree of signal security.
      Transmitted optical signal cannot be trapped by third person. This feature is attractive
       for military, banking and general data transmission applications.
6. Low Transmission Loss:
      Optical fiber exhibit low attenuation (or) transmission loss in comparison with the best
       copper conductors. Fibers have been fabricated with losses as low as 0.2 dB/km.
7. Ruggedness and Flexibility:
      Fibers are manufactured with high tensile strengths. The fibers may also be bent to
       quite small radii (or) twisted without damage.
     Because of the small sized, weight and flexibility optical fibers are generally superior in
       terms of storage, transportation, handling and installation to corresponding copper
       cables.
8. System Reliability And Ease Of Maintenance:
   
       repeaters (or) line amplifiers to boost the transmitted signal strength with fewer
       repeaters reliability is enhanced in comparison to conventional electrical system.
      Life time of optical fibers is 20 to 30 years. It reduces maintenance time and cost.
Propagation of light :
      Until the early seventeenth century it was generally believed that the light consisted of
       a stream of minute particles that were emitted by luminous sources.
      These particles were pictured as travelling in straightlines, and it was assumed that
       they could penetrate transparent materials but were reflected from opaque ones.
      This theory adequately described certain large scale optical effects such as reflection
       and refraction, but failed to explain finer-scale such as interference and diffraction.
      Later the work of Maxwell in 1864 theorized that light waves must be electromagnetic
       in nature.
      Furthermore observation of polarization effects indicated that light waves are
       transverse (that is, the wave motion is perpendicular to the direction in which the wave
       travels.)
      The electromagnetic wave radiated by a small optical source can be represented by a
       train of spherical wave fronts with the source at the center as shown in figure.
Fig; Representation of Spherical and Plane Wave front
      A wave front is defined as the locus of all points in the wave train which have the
       same phase.
      The speed of electromagnetic wave (c) in free space is approximately 3 x 108 m/sec.
      The distance travelled during eachcycle is called as wavelength (λ)
λ f=c
         Where,
            c - Velocity of electromagnetic radiation, usually called the speed of light.
            λ- Wavelength
            f- Frequency
      In fiber optics, it is more convenient to use the wavelength of light instead of the
       frequency with light frequencies; wavelength is often stated in microns or nanometers.
Fig: Reflection
Refraction
    Refraction occurs when light ray passes from one medium to another i.e. the light ray
       changes its direction at interface. Refraction occurs whenever density of medium
       changes. E.g. refraction occurs at air and water interface, the straw in a glass of water
       will appear as it is bent.
    The refraction can also observed at air and glass interface.
      When wave passes through less dense medium to denser medium, the wave is
       refracted (bent) towards the normal. Fig. below shows the refraction phenomena.
Fig: Refraction
    The refraction (bending) takes place because light travels at different speed in
       different mediums. The speed of light in free space is higher than in water or glass.
Refractive Index
    The amount of refraction or bending that occurs at the interface of two materials of
      different densities is usually expressed as refractive index of two materials. Refractive
      index is also known as index of refraction and is denoted by n.
      Based on material density, the refractive index is expressed as the ratio of the velocity
       oflight in free space to the velocity of light of the dielectric material (substance).
      The refractive index for vacuum and air is 1.0. For water it is 1.3 and for glass
       refractive index is 1.5.
Snell’s Law
    Snell‘s law states how light ray reacts when it meets the interface of two media having
       different indexes of refraction.
      Let the two medias have refractive indexes n1 and n2 where n1 >n2. Let n1 and n2 be
       the angles of incidence and angle of refraction respectively. Then according to Snell‘s
       law, a relationship exists between the refractive index of both materials given by,
      The refracted wave will be towards the normal when n1 < n2 and will away from it
       when n1 > n2. And, the equation below shows that the ratio of refractive index of two
       mediums is inversely proportional to the refractive and incident angles.
Critical Angle
     When the angle of incidence (θ1) is progressively increased, there will be progressive
        increase of refractive angle (θ2). At some condition, the refractive angle (θ2) becomes
        90o to the normal. When this happens the refracted light ray travels along the
        interface. The angle of incidence (θ1) at the point at which the refractive angle (θ1)
        becomes 90o is called the critical angle. It is denoted by θc.
     The critical angle is defined as the minimum angle of incidence (θ1) at which the ray
        strikes the interface of two media and causes an angle of refraction (θ2) equal 90oto
        90o. Figshows critical angle refraction.
Fig: Representation of critical angle and total internal reflection at the glass-air
interface
    If the angle if incidence θ1 is decreased, a point will eventually be reached where the
     light ray in air is parallel to the glass surface.
   This point is known as the critical angle of incidence θc. When the incident angle θ1 is
     less than the critical angle, the condition for internal reflection is satisfied; that is, the
     light is totally reflected back into the glass with no light escaping from the glass
     surface.
Numerical Aperture
      The numerical aperture (NA) of a fiber is a figure of merit which represents its light
       gathering capability. Larger the numerical aperture, the greater the amount of light
       accepted by fiber.
      The acceptance angle also determines how much light is able to be enter the fiber and
       hence there is relation between the numerical aperture and the cone of acceptance.
      The rays striking the core-cladding interface at angles less than θmin will refract out of
       the core and be lost in the cladding.
Fig: Meridional Ray optic representation of the propagation mechanism
    By the formula of NA note that the numerical aperture is effectively dependent only on
       refractive indices of core and cladding material. NA is not a function of fiber
       dimension.
      The numerical aperture is a dimensionless quantity whichis less than unity, with
       values normally ranging from 0.14 to 0.50.
      Also, the acceptance angle can be calculated by using the formula,
      The Cone of acceptance is the angle within which the light is accepted into the core
       and is able to travel along the fiber. The launching of light wave becomes easier for
       large acceptance come.
Types of Rays
      If the rays are launched within core of acceptance can be successfully propagated
       along the fiber. But the exact path of the ray is determined by the position and angle of
       ray at which it strikes the core.
      There exist three different types of rays.
        i)      Skew ray
        ii)     Meridional rays
        iii)    Axial rays.
      The skew ray does not pass through the center, as show in Fig.(a) shown below. The
       skew rays reflects off from the core cladding boundaries and again bounces around
       the outside of the core. It takes somewhat similar shape of spiral of helical path.
Fig: Different Ray Propagation
    The meridional ray enters the core and passes through its axis. When the core
       surface is parallel, it will always be reflected to pass through the fiber. The meridional
       ray is shown in fig. (b).
    The axial ray travels along the axis of the fiber and stays at the axis all the time. It is
       shown in fig. (c).
      The basic structure of an optical fiber consists of three parts; the core, the cladding
       and the coating or buffer. The basic structure of an optical fiber is shown on figure
       below.
Number of cores is bundled in plastic ducts. To ease identification, individual fibers are color
coded Table below shows an example of the color coding used by manufacturers.
      Second case the core refractive index is made to vary as a function of the radial
       distance from the center of the fiber. This type is a graded-index fiber.
      Another disadvantage of single mode fibers is that as the refractive index of glass
       decreases with optical wavelength, the light velocity will also be wavelength
       dependent. Thus the light from an optical transmitter will have definite spectral width.
      Rays on core edges offers reduced refractive index, hence travel more faster than
       axial rays and cause the light components to take same amount of time to travel the
       length of fiber, thus minimizing dispersion losses.
      Each path at a different angle is termed as ‘transmission mode‘ and the NA of
       graded index fiber is defined as the maximum value of acceptance angle at the fiber
       axis.
      Typical attenuation coefficients of graded index fibers at 850 nm are 2.5 to 3 dB/km,
       while at 1300 nm they are 1.0 to 1.5 dB/km.
      The main advantages of graded index fiber are:
             Reduced refractive index at the center of core.
             Comparatively cheap to produce.
Introduction
The signal attenuation of fiber determines the maximum distance between transmitter and
receiver. The attenuation also determines the number of repeaters required, maintaining
repeater is a costly affair.
Attenuation
    Attenuation of a light as it propagates along a fiber is an important consideration in the
      design of an optical communication system in determining the maximum transmission
      distance between a transmitter and a receiver.
    Attenuation in an optical fiber is caused by absorption, scattering and bending losses.
    Absorption is related to the fiber material, whereas scattering is associated both with
      the fiber material and with structural imperfections in the optical waveguide.
    Scattering due to structuralism perfection within the fiber. Nearly 90 % of total
      attenuation is caused by Rayleigh scattering only.
    The Rayleigh scattering is wavelength dependent and reduces rapidly as the
      wavelength of the incident radiation increases.
    Micro bending of optical fiber also contributes to the attenuation of signal.
Attenuation Units
    Signal attenuation (or fiber loss) is defined as the ratio of the optical output power Pout
      from a fiber of length L to the optical input power Pin .
    This power ratio is a function of wavelength. The symbol α is commonly used to
      express attenuation in decibels per kilometer (dB/Km).
Absorption
   Absorption is caused by three different mechanisms:
   Absorption by atomic defects in the glass composition
   Extrinsic absorption by impurity atoms in the glass material
   Intrinsic absorption by the basic constituent atoms of the fiber material.
   Atomic defects are imperfections of the atomic structure of the fiber material such as
     missing molecules, high-density clusters of atom groups or oxygen defects in the
     glass structure.
   Usually absorption losses arising from these defects are negligible compared to
     intrinsic and impurity absorption effects.
   The absorption effect is most significant when fiber is exposed to ionizing radiation in
     nuclear reactor, medical therapies, space missions etc. The radiation dames the
     internal structure of fiber. The damages are proportional to the intensity of ionizing
     particles. This results in increasing attenuation due to atomic defects and absorbing
     optical energy.
   The total dose a material receives is expressed in rad (Si), this is the unit for
     measuring radiation absorbed in bulk silicon.
      Intrinsic absorption thus sets the fundamental lower limit on absorption for any
       particular material.
      Intrinsic absorption results from electronic absorption bands in the ultraviolet region
       and from atomic vibration bands in the near infrared region. The electronic absorption
       bands are associated with the band gaps of the amorphous glass materials.
      Absorption occurs when a photon interacts with an electron in the valence band and
       excites it to a higher energy level.
    The magnitude and characteristic exponential decay of the ultraviolet absorption is
       shown in figure:
    The ultraviolet loss is small compared to scattering loss in the near infrared region.
Extrinsic Absorption
    Extrinsic absorption occurs due to electronic transitions between the energy level and
       because of charge transitions from one ion to another.
    A major source of attenuation is from transition of metal impurity ions such as iron,
       chromium, cobalt and copper. These losses can be upto 1 to 10 dB/km. The effect of
       metallic impurities can be reduced by glass refining techniques.
    Another major extrinsic loss is caused by absorption due to OH (Hydroxil) ions
       impurities dissolved in glass. Vibrations occur at wavelengths between 2.7 and 4.2
       μm.
    The absorption peaks occurs at 1400, 950 and 750 nm. These are first, second and
       third overtones respectively.
    Figure below shows absorption spectrum for OH group in silica. Between these
       absorption peaks there are regions of low attenuation.
Scattering Losses
    A beam propagating at the critical angle will change direction after it meet obstacle.
       Therefore, the light will be scattered. The scattering effects prevent the attainment of
       TIR at the core cladding boundary resulting in power loss. This loss is known as
       SCATTERING LOSS.
   
      Non-linear scattering losses
      Scattering losses arise from microscopic variations in the material density, from
       compositional fluctuations, and from structural in homogeneities or defects, occurring
       during fiber manufacture.
     Scattering losses exists in optical fibers because of microscopic variations in the
      material density and composition. As glass is composed by randomly connected
      network of molecules and several oxides (e.g. SiO2, GeO2 and P2O5), these are the
      major cause of compositional structure fluctuation.
 Linear scattering losses:
Linear scattering mechanism causes transfer of optical power from one mode to different
mode. This process tend to result on attenuation of the transmitted light as the transfer may
be to a leaky mode (or) radiation mode which does not continue to propagate within the fiber .
There are two types of linear scattering losses.
1. Rayleigh Scattering
2. Mie Scattering
Rayleigh Scattering
    Rayleigh scattering in glass is the same phenomenon that scatters light from the sun
       in the atmosphere, thereby giving rise to a blue sky.
      Rayleigh scatteringof light is due to small localized changes in the refractive index of
       the core and cladding material. There are twocauses during the manufacturing of
       fiber.
      The first is due to slight fluctuation in mixing of ingredients. The random changes
       because of this are impossible to eliminate completely.
      The other cause is slight change in density as the silica cools and solidifies. When
       light ray strikes such zones it gets scattered in all directions. The amount of scatter
       depends on the size of the discontinuity compared with the wavelength of the light so
       the shortest wavelength (highest frequency) suffers most scattering.
      The expressions for scattering induced attenuation are fairly complex owing to the
       random molecular nature and the various oxide constituents of glass.
      For single component glass the scattering loss at a wavelength λ resulting from
       density fluctuations can be approximated by,
Figure below shows graphically the relationship between wavelength and Rayleigh scattering
loss.
Mie Scattering
Linear scattering also occurs at inhomogenities and these arise from imperfections in the
fiber‘s geometry, irregularities in the refractive index and the presence of bubbles etc. caused
during manufacture. Careful control of manufacturing process can reduce mie scattering to
insignificant levels.
Bending Loss
    Radiative losses occur whenever an optical fiber undergoes a bend of finite radius of
      curvature.
      Fibers can subject to two types of bends: (a) microscopic bends having radii that are
       large compared to the fiber diameter for example, such as occur when a fiber cable
       turns a corner and (b) random microscopic bends of the fiber axis that can arise when
       the fibers are incorporated into cables.
      The sharp bend of a fiber causes significant radiative losses and there is also
       possibility of mechanical failure. This is shown in Figure below:
      For multimode graded-index fiber having a core radius a, outer radius b(excluding the
       jacket), and index difference , the micro bendingloss of a jacket is reduced from that of
       an unjacketed fiber by a factor
      Here, and are the Young’s moduli of the fiber and jacket respectively. The Young’s
       modulus of common jacket materials ranges from 20 to 500 MP and the Young’s
       modulus of fused silica glass is about 65 GPa.
      Material Dispersion, which arises from the variation of the refractive index of the core
       material as a function of wavelength. It is also referred to as chromatic P. Arunagiri,
       Assistant Professor, Department of ECE, Sri Manakula Vinayagar Engineering
       College
Figure: Broadening and spreading of two adjacent pulses as they travel along fiber
    Figure above shows, after travelling some distance, pulse starts broadening and
       overlap withthe neighboring pulses. At certain distance the pulses are not even
       distinguishable anderror will occur at receiver. Therefore the information capacity is
       specified by bandwidthdistanceproduct (MHz * km). For step index bandwidth
       distance product is 20 MHz*kmand for graded index it is 2.5 MHz*km.
      The information carrying capacity can be determined by examining the deformation of
       short light pulses propagating along the fiber.
Group Delay
      Consider a fiber cable carrying optical signal equally with various modes and each
       modecontains all the spectral components in the wavelength band.
      All the spectral componentstravel independently and they observe different time delay
       and group delay in thedirection of propagation. The group delay per unit length in the
       direction of propagation is given by,
      The velocity at which the energy in a pulse travels along thefiber is known as group
       velocity. Group velocity is given by,
      The group delay depends on the wavelength, each spectral component of any
       particular mode takes a different amount of time to travel a certain distance. As a
       result of this difference in time delays, the optical signal pulse spreads out with time as
       it is transmitted over the fiber. Thus it also depends on pulse spreading.
      Thus, the dispersion is defines as the pulse spread as a function of wavelength. It is
       measuredin picoseconds per kilometer per nanometer. It is expressed as,
Material Dispersion
    Material dispersion is also called as chromatic dispersion. Material dispersion exists
       due to change in index of refraction for different wavelengths.The group velocity Vg of
       a mode is a function of the index of refraction, the various spectral components of a
       given mode will travel at different speeds, depending on the wavelength.
      Material dispersion is an intramodal dispersion effect, and is of particular importance
       for single-mode waveguides and for LED systems.
      By considering a plane wave propagating in an infinity extended medium that has a
       refractive indexn(λ) equal to that of the fiber core.
The propagation constant is thus given by,
The first term is constant and the second term is group delay arising from waveguide
dispersion.
This factor reaches a maximum at V=1.2 but runs between 0.2 and 0.1 for a practical single-
mode operating range of V = 2.0 to 2.4. thus for values ofΔ = 0.01 and n2= 1.5, The figure
above shows that fused –silica –core single mode fiber having V=2.4
Mode Coupling
   After certain initial length, the pulse distortion increases less rapidly because of mode
      coupling. The energy from one mode is coupled to other mods because of:
        - Structural imperfections.
        - Fiber diameter variations.
        - Refractive index variations.
        - Microbends in cable.
      Due to the mode coupling, average propagation delay become less and intermodal
       distortion reduces.
      Suppose certain initial coupling length = Lc, mode coupling length, over Lc = Z.
       Additional loss associated with mode coupling = h (dB/ km). Therefore the excess
       attenuation resulting from mode coupling = hZ. The improvement in pulse spreading
       by mode coupling is given as :
where, C is a constant, is the pulse width increase in the absence of mode coupling, σ 0 is the
pulse broadening in the presence of strong mode coupling, and hZ is the excess attenuation
resulting from mode coupling.
      For long fiber length‘s the effect of mode coupling on pulse distortion is significant. For
       a graded index fiber, the effect of distance on pulse broading for various coupling
       losses is shown in Figure below.
Fig: Mode coupling effects on pulse distortion in long fibers for various coupling
losses
Design Optimization
- Longer life.
- Low attenuation.
- Signal transfer quality is good.
- Modal noise is absent.
- Largest BW-distance product.
Dispersion Flattened
Dispersion flattened fibers are more complex to design. It offers much broader span of
wavelengths to suit desirable characteristics. Two configurations are :
As the dispersion varies with wavelength and fiber type. Different formulae are used to
calculate dispersions for variety of fiber at different wavelength.
For a non –dispersion shifted fiber between 1270 nm to 1340 nm wavelength, the expression
for the dispersion is given as,
Figure below shows dispersion performance curve for non-dispersion shifted fibers in 1270 –
1340 nm region.
                                       Fig: Refraction
   The refraction (bending) takes place because light travels at different speed in different mediums.
    The speed of light in free space is higher than in water or glass.
Refractive Index
 The amount of refraction or bending that occurs at the interface of two materials of different
   densities is usually expressed as refractive index of two materials. Refractive index is also known as
   index of refraction and is denoted by n.
 Based on material density, the refractive index is expressed as the ratio of the velocity oflight in free
   space to the velocity of light of the dielectric material (substance).
                                                       𝑺𝒑𝒆𝒆𝒅 𝒐𝒇 𝒍𝒊𝒈𝒕𝒉 𝒊𝒏 𝒂𝒊𝒓         𝒄
                        𝑹𝒆𝒇𝒓𝒂𝒄𝒕𝒊𝒗𝒆 𝒊𝒏𝒅𝒆𝒙, 𝒏 =                                    =
                                                    𝑺𝒑𝒆𝒆𝒅 𝒐𝒇 𝒍𝒊𝒈𝒉𝒕 𝒊𝒏 𝒎𝒆𝒅𝒊𝒖𝒎         𝑽
 The refractive index for vacuum and air is 1.0. For water it is 1.3 and for glass refractive index is
   1.5.
Snell’s Law
   Snell‘s law states how light ray reacts when it meets the interface of two media having different
    indexes of refraction.
   Let the two medias have refractive indexes n1 and n2 where n1 >n2. Let n1 and n2 be the angles of
    incidence and angle of refraction respectively. Then according to Snell‘s law, a relationship exists
       between the refractive index of both materials given by,
                                             n1 sin θ1 = n2 sin θ2
                             Where, n1 is the refractive index of the core
                                     n2 is the refractive index of the cladding
      A refractive index model for Snell’s law is shown in figure below:
   Second case the core refractive index is made to vary as a function of the radial distance from the
    center of the fiber. This type is a graded-index fiber.
                  Fig (a) Single mode step index Fiber(b) Multimode Step-index Fiber
                                     (c) Multimode graded-index Fiber
   The light rays no longer follow straight lines; they follow a serpentine path being gradually bent
    back towards the center by the continuously declining refractive index.
    The modes travelling in a straight line are in a higher refractive index so they travel slower than the
    serpentine modes. This reduces the arrival time disparity because all modes arrive at about the same
    time.
   Figure below shows the light trajectory in detail. It is seen that light rays running close to the fiber
    axis with shorter path length, will have a lower velocity because they pass through a region with a
    high refractive index.
 Rays on core edges offers reduced refractive index, hence travel more faster than axial rays and
  cause the light components to take same amount of time to travel the length of fiber, thus
  minimizing dispersion losses.
 Each path at a different angle is termed as ‘transmission mode‘and the NA of graded index fiber is
  defined as the maximum valueof acceptance angle at the fiber axis.
 Typical attenuation coefficients of graded index fibers at 850 nm are 2.5 to 3 dB/km,while at 1300
  nm they are 1.0 to 1.5 dB/km.The main advantages of graded index fiber are:
       Reduced refractive index at the center of core.
       Comparatively cheap to produce.
Numerical Aperture
 The numerical aperture (NA) of a fiber is a figure of merit which represents its light gathering
  capability. Larger the numerical aperture, the greater the amount of light accepted by fiber. The
  acceptance angle also determines how much light is able to be enter the fiber and hence there is
  relation between the numerical aperture and the cone of acceptance.
 The rays striking the core-cladding interface at angles less than θmin will refract out of the core and
  be lost in the cladding.
                                                            𝒏𝟐
                                             𝐬𝐢𝐧 𝜽 𝐦𝐢𝐧 =
                                                            𝒏𝟏
 The condition of the above equation can be related to the maximum entrance angle 𝜃𝑜𝑚𝑎𝑥 through
  the relationship
                             𝒏𝟎 𝑺𝒊𝒏 𝜽𝒐𝒎𝒂𝒙 = 𝒏𝟏 𝐬𝐢𝐧 𝜽𝒄 = (𝒏𝟏 𝟐 − 𝒏𝟐 𝟐 )𝟏/𝟐
Introduction
 The signal attenuation of fiber determines the maximum distance between transmitter and receiver.
   The attenuation also determines the number of repeaters required, maintaining repeater is a costly
   affair.
Attenuation
 Attenuation of a light as it propagates along a fiber is an important consideration in the design of an
   optical communication system in determining the maximum transmission distance between a
   transmitter and a receiver.
 Attenuation in an optical fiber is caused by absorption, scattering and bending losses.
 Absorption is related to the fiber material, whereas scattering is associated both with the fiber
   material and with structural imperfections in the optical waveguide.
 Scattering due to structuralimperfection within the fiber. Nearly 90 % of total attenuation is caused
   by Rayleigh scattering only.
 The Rayleigh scattering is wavelength dependent and reduces rapidly as the wavelength of the
   incident radiation increases.
 Microbending of optical fiber also contributes to the attenuation of signal.
Attenuation Units
 Signal attenuation (or fiber loss) is defined as the ratio of the optical output power P out from a fiber
   of length L to the optical input power Pin . This power ratio is a function of wavelength. The symbol
   α is commonly used to express attenuation in decibels per kilometer (dB/Km).
                                                 𝟏𝟎         𝑷𝒊𝒏
                                           𝜶=        𝒍𝒐𝒈 (        )
                                                  𝑳        𝑷𝒐𝒖𝒕
Absorption
   Absorption is caused by three different mechanisms:
    1. Absorption by atomic defects in the glass composition
    2. Extrinsic absorption by impurity atoms in the glass material
    3. Intrinsic absorption by the basic constituent atoms of the fiber material.
   Atomic defects are imperfections of the atomic structure of the fiber material such as missing
    molecules, high-density clusters of atom groups or oxygen defects in the glass structure.
   Usually absorption losses arising from these defects are negligible compared to intrinsic and
    impurity absorption effects.
   The absorption effect is most significant when fiber is exposed to ionizing radiation in nuclear
    reactor, medical therapies, space missions etc. The radiation dames the internal structure of fiber.
    The damages are proportional to the intensity of ionizing particles. This results in increasing
    attenuation due to atomic defects and absorbing optical energy.
   The total dose a material receives is expressed in rad (Si), this is the unit for measuring radiation
    absorbed in bulk silicon.
                                        1 rad (Si) = 0.01 J.kg
   The higher the radiation intensity more the attenuation as shown in Fig shown below:
Extrinsic Absorption
 Extrinsic absorption occurs due to electronic transitions between the energy level and because of
   charge transitions from one ion to another. A major source of attenuation is from transition of metal
   impurity ions such as iron, chromium, cobalt and copper. These losses can be upto 1 to 10 dB/km.
   The effect of metallic impurities can be reduced by glass refining techniques.
 Another major extrinsic loss is caused by absorption due to OH (Hydroxil) ions impurities
   dissolved in glass. Vibrations occur at wavelengths between 2.7 and 4.2 μm.
 The absorption peaks occurs at 1400, 950 and 750 nm. These are first, second and third overtones
   respectively.
 Figure below shows absorption spectrum for OH group in silica. Between these absorption peaks
   there are regions of low attenuation.
                                Fig: Absorption Spectra for OH group
 These absorption peaks define three regions or windows of preferred operation. The first window is
   centered at 850 nm. The second window is centered at 1300 nm. The third window iscentered at
   1550 nm. Fiber optic systems operate at wavelengths defined by one of these windows.
 The amount of water(OH-) impurities present in a fiber should be less than a few parts per billion.
   Fiber attenuation caused by extrinsic absorption is affected by the level of impurities(OH-) present
   in the fiber. If the amount of impurities in a fiber is reduced, then fiber attenuation is reduced.
    Hydrolysis method is one of the fabrication processes of optical fiber. The streaming materials
       used in this method are SiCl₄, GeCl₄, &PoCl₃. During hydrolysis process ie., when these
       materials used in hydrolysis process, gives OH ions.
                        SiCl₄ + 2H₂O ――――――>SiO₂ + 4HCl + OH⁻ ions
                                Flame hydrolysis
Scattering Losses
   A beam propagating at the critical angle will change direction after it meet obstacle. Therefore, the
   light will be scattered. The scattering effects prevent the attainment of TIR at the core cladding
   boundary resulting in power loss. This loss is known as SCATTERING LOSS.
     Linear scattering losses
     Non-linear scattering losses
 Scattering losses arise from microscopic variations in the material density, from compositional
   fluctuations, and from structural in homogeneities or defects, occurring during fiber manufacture.
 Scattering losses exists in optical fibers because of microscopic variations in the material density
   and composition. As glass is composed by randomly connected network of molecules and several
   oxides (e.g. SiO2, GeO2 and P2O5), these are the major cause of compositional structure fluctuation.
    Linear scattering losses:
       Linear scattering mechanism causes transfer of optical power from one mode to different mode.
       This process tend to result on attenuation of the transmitted light as the transfer may be to a
       leaky mode (or) radiation mode which does not continue to propagate within the fiber . There
       are two types of linear scattering losses.
       1. Rayleigh Scattering
       2. Mie Scattering
Rayleigh Scattering
 Rayleigh scattering in glass is the same phenomenon that scatters light from the sun in the
   atmosphere, thereby giving rise to a blue sky.
 Rayleigh scatteringof light is due to small localized changes in the refractive index of the core and
   cladding material. There are twocauses during the manufacturing of fiber.
 The first is due to slight fluctuation in mixing of ingredients. The random changes because of this
   are impossible to eliminate completely.
 The other cause is slight change in density as the silica cools and solidifies. When light ray strikes
   such zones it gets scattered in all directions. The amount of scatter depends on the size of the
   discontinuity compared with the wavelength of the light so the shortest wavelength (highest
   frequency) suffers most scattering.
 The expressions for scattering induced attenuation are fairly complex owing to the random
    molecular nature and the various oxide constituents of glass.
   For single component glass the scattering loss at a wavelength λ resulting from density fluctuations
    can be approximated by,
                                                𝟖𝝅𝟑 𝟐
                                       𝜶𝒔𝒄𝒂𝒕 =       (𝒏 − 𝟏)𝟐 𝒌𝑩 𝑻𝒇 𝜷𝑻
                                                 𝟑𝝀𝟒
    Where, n is the refractive index,
    𝒌𝑩 is Boltzmann’s constant,
    𝜷𝑻 is the isothermal compressibility of the material and the fictive temperature
            𝑻𝒇 is the temperature at which the density fluctuations are frozen into the glass as it solidifies.
                                                    𝟖𝝅𝟑 𝟖 𝟐
                                          𝜶𝒔𝒄𝒂𝒕 =       𝒏 𝒑 𝒌𝑩 𝑻𝒇 𝜷𝑻
                                                    𝟑𝝀𝟒
    Where, p is the photo-elastic coefficient
   For Multicomponent glasses the scattering is given by,
                                               𝟖𝝅𝟑
                                            𝜶=      (𝜹𝒏𝟐 )𝟐 𝜹𝑽
                                               𝟑𝝀𝟒
    Where, (𝜹𝒏𝟐 ) – mean square of refractive index over a volume 𝛿𝑉
   Figure below shows graphically the relationship between wavelength and Rayleigh scattering loss.
        Here,𝑬𝒇 and𝑬𝒇 are the Young’s moduli of the fiber and jacket respectively. The Young’s modulus
   of common jacket materials ranges from 20 to 500 MP and the Young’s modulus of fused silica
   glass is about 65 GPa.
Macro Bending Loss
 The change in spectral attenuation caused by macro bending is different to micro bending. Usually
   there are no peaks and troughs because in a macro bending no light is coupled back into the core
   from the cladding as can happen in the case of microbends.
 The macrobending losses are cause by large scale bending of fiber. The losses are eliminated when
   the bends are straightened. The losses can be minimized by not exceeding the long term bend radii.
   Figure below illustrates macrobending.
Core-Cladding Losss
 Since the core and cladding have different indices of refraction hence they have different attenuation
coefficients α1 and α2 respectively. For step index fiber, the loss for a mode order (v, m) is given by,
                                Figure: MacroBending Loss
                                           𝑷𝒄𝒐𝒓𝒆      𝑷𝒄𝒍𝒂𝒅
                                 𝜶𝒗𝒎 = 𝜶𝟏        + 𝜶𝟐
                                             𝑷          𝑷
        𝑷𝒄𝒐𝒓𝒆 𝑷𝒄𝒍𝒂𝒅
   Where 𝑷 and 𝑷 are the fractional powers
      For low-order modes, the expression reduced to
                                                                  𝑷𝒄𝒍𝒂𝒅
                                        𝜶𝒗𝒎 = 𝜶𝟏 + (𝜶𝟐 − 𝜶𝟏 )
                                                                    𝑷
DISPERSION
   An optical signal becomes increasingly distorted as it travels along a fiber. This distortion is due to the
   effects of intramodal dispersion and intermodal delay effects. These distortion effects can be
   explained by examining the behavior of the group velocities of the guided modes, where the group
   velocity is the speed at which energy in a particular mode travels along the fiber.
   Intramodal Dispersion
    Intramodal Dispersion is pulse spreading that occurs within a single mode. It is a result of the group
       velocity being a function of the wavelength λ.
    It depends on the wavelength, its effect on signal distortion increases with the spectral width of the
       optical source.This spectral width is the band of wavelengths over which the source emits light.
    For LEDs the rms spectral width is approximately 5 % of a central wavelength. Laser diode optical
       sources have much narrower spectral widths, typical values being 1 to 2 nm.
    The two main causes of intramodal dispersion are:
           1. Material Dispersion:
               Material Dispersion, which arises from the variation of the refractive index of the core
               material as a function of wavelength. It is also referred to as chromatic dispersion or spectral
               dispersion. This causes a wavelength dependence of the group velocity of any given mode;
               that is pulse spreading occurs even when different wavelengths follow the same path.
           2. Wavelength Dispersion:
                Wavelength dispersion, occurs because a single-mode fiber only confines about 80 % of
                   the optical power to the core.
                Dispersion thus arises, since the 20 % of the light propagating in the cladding travels
                   faster than the light confined to the core.
                The amount of waveguide dispersion depends on the fiber design, since the modal
                   propagation constant β is a function of a/λ, (where λ is the wavelength and a is the core
                   radius.)
    Dispersion and attenuation of pulse travelling along the fiber is shown in figure below.
        Figure: Broadening and spreading of two adjacent pulses as they travel along fiber
 Figure above shows, after travelling some distance, pulse starts broadening and overlap withthe
   neighboring pulses. At certain distance the pulses are not even distinguishable anderror will occur at
   receiver. Therefore the information capacity is specified by bandwidthdistanceproduct (MHz *
   km). For step index bandwidth distance product is 20 MHz*kmand for graded index it is 2.5
   MHz*km.
 The information carrying capacity can be determined by examining the deformation of short light
   pulses propagating along the fiber.
Group Delay
 Consider a fiber cable carrying optical signal equally with various modes and each modecontains all
   the spectral components in the wavelength band.
 All the spectral componentstravel independently and they observe different time delay and group
   delay in thedirection of propagation. The group delay per unit length in the direction of propagation
   is given by,
                                     𝝉𝒈     𝟏     𝟏 𝒅𝜷          𝝀𝟐 𝒅𝜷
                                        =      =        = −
                                     𝑳     𝑽𝒈      𝒄 𝒅𝒌        𝟐𝝅𝒄 𝒅𝝀
   Here, L is the distance travelled by the pulse, 𝜷 – propagation constant along the fiber axis, 𝑘 =
    1⁄2𝜋𝜆
 The velocity at which the energy in a pulse travels along thefiber is known as group velocity. Group
   velocity is given by,
                                                       𝒅𝜷 −𝟏
                                             𝑽𝒈 = 𝒄. ( )
                                                       𝒅𝒌
 The group delay depends on the wavelength, each spectral component of any particular mode takes
   a different amount of time to travel a certain distance. As a result of this difference in time delays,
   the optical signal pulse spreads out with time as it is transmitted over the fiber. Thus it also depends
   on pulse spreading.
Thus, the dispersion is defines as the pulse spread as a function of wavelength. It is measured in
picoseconds per kilometer per nanometer. It is expressed as,
                                                      𝟏 𝒅𝝉𝒈
                                                𝑫=
                                                      𝑳 𝒅𝝀
WAVEGUIDE DISPERSION AND MATERIAL DISPERSION
   Material Dispersion
    Material dispersion is also called as chromatic dispersion. Material dispersion exists due to change
     in index of refraction for different wavelengths.The group velocity Vg of a mode is a function of the
     index of refraction, the various spectral components of a given mode will travel at different speeds,
     depending on the wavelength.
    Material dispersion is an intramodal dispersion effect, and is of particular importance for single-
     mode waveguides and for LED systems.
    By considering a plane wave propagating in an infinity extended medium that has a refractive
     indexn(λ) equal to that of the fiber core.
    The propagation constant is thus given by,
                                                        𝟐𝝅𝒏(𝛌)
                                                  𝜷=
                                                          𝛌
     The group delay 𝜏𝑀𝑎𝑡 can be written by substituting the value of β for 𝑘 = 1⁄2𝜋𝜆 as,
                                                      𝑳        𝒅𝒏
                                              𝝉𝑴𝒂𝒕 = (𝒏 − 𝛌 )
                                                      𝒄        𝒅𝛌
                                                        −𝛌 𝒅𝟐 𝒏
                                              𝑫𝑴𝒂𝒕 =       × 𝟐
                                                         𝒄  𝒅𝛌
                                                                  𝒅𝟐 𝒏
       Where, C- is the velocity of light, 𝛌 – center wavelength, 𝟐 – first order derivative ofindex of
                                                                 𝒅𝛌
       refraction w.r.to wavelength. Negative sign shows that the upper sideband signal (lowest
       wavelength) arrives before the lower sideband (highest wavelength).
   Mode Coupling
       After certain initial length, the pulse distortion increases less rapidly because of mode coupling. The
        energy from one mode is coupled to other mods because of:
               - Structural imperfections.
               - Fiber diameter variations.
               - Refractive index variations.
               - Microbends in cable.
       Due to the mode coupling, average propagation delay become less and intermodal distortion
        reduces.
       Suppose certain initial coupling length = Lc, mode coupling length, over Lc = Z. Additional loss
        associated with mode coupling = h (dB/ km). Therefore the excess attenuation resulting from mode
        coupling = hZ. The improvement in pulse spreading by mode coupling is given as :
                                                            𝝈𝒄 𝟐
                                                      𝒉𝒁 ( ) = 𝑪
                                                            𝝈𝒐
        where, C is a constant, 𝜎𝑜 is the pulse width increase in the absence of mode coupling, 𝜎𝑐 is the
        pulse broadening in the presence of strong mode coupling, and hZ is the excess attenuation resulting
        from mode coupling.
For long fiber length‘s the effect of mode coupling on pulse distortion is significant. For a graded index
fiber, the effect of distance on pulse broading for various coupling losses is shown in Figure below.
        Fig: Mode coupling effects on pulse distortion in long fibers for various coupling losses
Polarization Mode Dispersion (PMD)
    Polarization Mode Dispersion (PMD) is a broadening of the input pulse due to a phase delay between input
       polarization states. Single-mode optical fiber and components support one fundamental mode, which consists
       of two orthogonal polarization modes.
    Ideally, the core of an optical fiber is perfectly circular, and therefore has the same index of refraction for
       both polarization states. However, mechanical and thermal stresses introduced during manufacturing result in
       asymmetries in the fiber core geometry. This asymmetry introduces small index of refraction differences for
       the two polarization states, a property called birefringence.
    External mechanical stresses and environmental conditions exacerbate the problem. Birefringence creates
       differing optical axes that generally correspond to the fast and slow axes. (These axes can also be thought of
       as corresponding to the Linear Polarization (LP) modes or Principal States of Polarization (PSP).)
       Birefringence causes one polarization mode to travel faster than the other, resulting in a difference in the
       propagation time called the differential group delay (DGD).
    DGD is the unit that is used to describe PMD. DGD is typically measured in picoseconds.
    When mode coupling is present, both the PSP and the DGD are also dependent on optical frequency. Mode
     coupling refers to an exchange of power among propagating polarization modes. This is usually seen in long
     lengths of single-mode fiber, and is sometimes observed even in short optical components.
    PMD effects resemble those of chromatic dispersion, but with some key differences: Chromatic dispersion is
     a rather stable, linear effect, making compensation relatively easy, but PMD is a linear effect that is time-
     varying in fiber links, making compensation difficult. PMD is very stable in components.
    Unlike chromatic dispersion, the effects of PMD are dependent on the launched polarization state. In high-bit-
     rate systems, PMD may introduce errors as pulses spread into one another.
                    Fig: Fiber attenuation due to micro bending and Macro bending Loss
                                  UNIT-V OPTICAL NETWORKS
SONET/SDH
       The ANSI standard is called the Synchronous Optical Network (SONET). The ITU-T standard is
called the Synchronous Digital Hierarchy (SOH). SONET was developed by ANSI; SDH was developed by
ITU-T. SONET/SDH is a synchronous network using synchronous TDM multiplexing. All clocks in the
system are locked to a master clock.
ARCHITECTURE
       Architecture of a SONET system contains: signals, devices, and connections.
Signals: SONET defines a hierarchy of electrical signaling levels called synchronous transport signals
(STSs). Each STS level (STS-l to STS-192) supports a certain data rate, specified in megabits per second.
The corresponding optical signals are called optical carriers (OCs). SDH specifies a similar system called a
synchronous transport module (STM).
SONET Devices: SONET transmission relies on three basic devices: STS multiplexers/demultiplexers,
regenerators, add/drop multiplexers and terminals.
STS Multiplexer/Demultiplexer: It marks the beginning points and endpoints of a SONET link. They
provide the interface between an electrical tributary network and the optical network. An STS multiplexer
multiplexes signals from multiple electrical sources and creates the corresponding OC signal. An STS
demultiplexer demultiplexes an optical OC signal into corresponding electric signals.
Regenerator: Regenerators extend the length of the links. A regenerator is a repeater that takes a received
optical signal (OC-n), demodulates it into the corresponding electric signal (STS-n), regenerates the electric
signal, and finally modulates the electric signal into its correspondent OC-n signal. A SONET regenerator
replaces some of the existing overhead information (header information) with new information.
Add/drop Multiplexer: It allows insertion and extraction of signals. An add/drop multiplexer (ADM)
can add STSs coming from different sources into a given path or can remove a desired signal from a path
and redirect it without demultiplexing the entire signal. Instead of relying on timing and bit positions,
add/drop multiplexers use header information such as addresses and pointers (described later in this section)
to identify individual streams.
       In the simple configuration shown by Figure, a number of incoming electronic signals are fed into
an STS multiplexer, where they are combined into a single optical signal. The optical signal is transmitted
to a regenerator, where it is recreated without the noise it has picked up in transit. The regenerated signals
from a number of sources are then fed into an add/drop multiplexer. The add/drop multiplexer reorganizes
these signals, if necessary, and sends them out as directed by information in the data frames. These
demultiplexed signals are sent to another regenerator and from there to the receiving STS demultiplexer,
where they are returned to a format usable by the receiving links.
Terminals: A terminal is a device that uses the services of a SONET network. For example, in the
Internet, a terminal can be a router that needs to send packets to another router at the other side of a SONET
network.
Connections: The devices are connected using sections, lines, and paths.
       Sections: A section is the optical link connecting two neighbor devices: multiplexer to multiplexer,
       Multiplexer to regenerator, or regenerator to regenerator.
       Lines: A line is the portion of the network between two multiplexers: STS multiplexer to add/drop
       multiplexer, two add/drop multiplexers, or two STS multiplexers.
       Paths: A path is the end-to-end portion of the network between two STS multiplexers. In a simple
       SONET of two STS multiplexers linked directly to each other, the section, line, and path are the
       same.
SONET LAYERS
       The SONET standard includes four functional layers: the photonic, the section, the line, and the path
layer. The headers added to the frame at the various layers are discussed later in this chapter. SONET
defines four layers: path, line, section, and photonic.
Path Layer: The path layer is responsible for the movement of a signal from its optical source to its optical
destination. At the optical source, the signal is changed from an electronic form into an optical form,
multiplexed with other signals, and encapsulated in a frame. At the optical destination, the received frame is
demultiplexed, and the individual optical signals are changed back into their electronic forms. Path layer
overhead is added at this layer. STS multiplexers provide path layer functions.
Line Layer: The line layer is responsible for the movement of a signal across a physical line. Line layer
overhead is added to the frame at this layer. STS multiplexers and add/drop multiplexers provide line layer
functions.
Section Layer: The section layer is responsible for the movement of a signal across a physical section. It
handles framing, scrambling, and error control. Section layer overhead is added to the frame at this layer.
Photonic Layer: The photonic layer corresponds to the physical layer of the OSI model. It includes
physical specifications for the optical fiber channel, the sensitivity of the receiver, multiplexing functions,
and so on. SONET uses NRZ encoding with the presence of light representing 1 and the absence of light
representing O.
SONET FRAMES
       Each synchronous transfer signal STS-n is composed of 8000 frames. Each frame is a two-
dimensional matrix of bytes with 9 rows by 90 x n columns. For example, STS-l frame is 9 rows by 90
columns (810 bytes), and an STS-3 is 9 rows by 270 columns (2430 bytes). Figure 17.4 shows the general
format of an STS-l and an STS-n.
       A SONET STS-n signal is transmitted at 8000 frames per second. If we sample a voice signal and
use 8 bits (l byte) for each sample, we can say that each byte in a SONET frame can carry information from
a digitized voice channe1. In other words, an STS-l signal can carry 774 voice channels simultaneously
(810 minus required bytes for overhead). Each byte in a SONET frame can carry a digitized voice channel.
Wavelength division Multiplexing (WDM): A powerful aspect of an optical communication link is that many
different wavelengths can be sent along a single fiber simultaneously in the 1300 to 1600nm spectral band. The
technology of combining a number of wavelengths on to the same fiber is known as wavelength division multiplexing
or WDN.
Features of WDN:
Capacity upgrade: If each wavelength supports an independent network signal of perhaps a few giga bits per
second, then WDN can increase the capacity of fiber optic network dramatically.
Transparency: Using different wavelengths, fast (Or) slow asynchronous and synchronous digital data and analog
information can be sent simultaneously and independently, over the same fiber, without the need for a common signal
structure.
Wavelength routing: The use of wavelength sensitive optical routing devices makes it possible to use wavelength as
another dimension, in addition to the time and space in designing communication networks and switches. In
wavelength routed networks, use the actual wavelength as intermediate (or) final address.
Wavelength switching: Wavelength routed network-rigid configuration (can not be altered) Wavelength switched
network (WSN)-allow the reconfiguration of optical network. Key components needed for WSN add drop
multiplexed. Optical cross connects and wavelength converters.
Operation principle of WDM.
    Here N fibers come together at an optical combiner (or)wavelength multiplexer, each with its energy
       present at different wavelength.
    The N light beams are combined (or) multiplexed on to a single shared fiber for transmission to a
       distance destination.
    At far end, the beam is split up over many fibers as there were on the input side. Each output fiber
       contains a short, specially constructed core that filters act all but one wavelength.
    The resulting signals can be rated to their destination (or) recombined in different ways for
       additional multiplexed transport
    The only difference with electrical FDM is that on optical system using a diffraction grating is
       completely passive and thus highly reliable.
    The first commercial system had eight channels of 2.5 Gpbs per channel. By 2001, there were
       products with 96 channels of 10 Gpbs , for a total of 960 Gbps.
    When the number of channels is very large and wavelength is spaced close together, for example
       0.1nm, the system often referred to as DWDM (Dense WDM).
    By running many channels in parallel on different wavelength, the aggregate bandwidth is increased
       linearly with the no. of channels. Since the bandwidth of single fiber band is about 25,000 GHZ,
       there is theoretically room for 2500 10 GPPS channels even at 1 bit/HZ. (for DWDM, write same
       explanation with the diagram)
Wavelength division Multiplexing (WDM): A powerful aspect of an optical communication link is that many
different wavelengths can be sent along a single fiber simultaneously in the 1300 to 1600nm spectral band. The
technology of combining a number of wavelengths on to the same fiber is known as wavelength division multiplexing
or WDN.
Features of WDN:
Capacity upgrade: If each wavelength supports an independent network signal of perhaps a few giga bits per
second, then WDN can increase the capacity of fiber optic network dramatically.
Transparency: Using different wavelengths, fast (Or) slow asynchronous and synchronous digital data and analog
information can be sent simultaneously and independently, over the same fiber, without the need for a common signal
structure.
Wavelength routing: The use of wavelength sensitive optical routing devices makes it possible to use wavelength as
another dimension, in addition to the time and space in designing communication networks and switches. In
wavelength routed networks, use the actual wavelength as intermediate (or) final address.
Wavelength switching: Wavelength routed network-rigid configuration (can not be altered) Wavelength switched
network (WSN)-allow the reconfiguration of optical network. Key components needed for WSN add drop
multiplexed. Optical cross connects and wavelength converters.
Operation principle of WDM.
     Here N fibers come together at an optical combiner (or)wavelength multiplexer, each with its energy
        present at different wavelength.
    The N light beams are combined (or) multiplexed on to a single shared fiber for transmission to a
       distance destination.
    At far end, the beam is split up over many fibers as there were on the input side. Each output fiber
       contains a short, specially constructed core that filters act all but one wavelength.
    The resulting signals can be rated to their destination (or) recombined in different ways for
       additional multiplexed transport
    The only difference with electrical FDM is that on optical system using a diffraction grating is
       completely passive and thus highly reliable.
    The first commercial system had eight channels of 2.5 Gpbs per channel. By 2001, there were
       products with 96 channels of 10 Gpbs , for a total of 960 Gbps.
    When the number of channels is very large and wavelength is spaced close together, for example
       0.1nm, the system often referred to as DWDM (Dense WDM).
By running many channels in parallel on different wavelength, the aggregate bandwidth is increased
linearly with the no. of channels. Since the bandwidth of single fiber band is about 25,000 GHZ, there is
theoretically room for 2500 10 GPPS channels even at 1 bit/HZ. (for DWDM, write same explanation with
the diagram)
    OPTICAL CDMA TECHNIQUE Optical code division multiple access (OCDMA) combines the
       beneficial aspects of optical fiber and the flexibility of the CDMA to achieve reliable high speed
       connectivity. CDMA was first applied to optical domain in the mid 1980s.
    The optical code division multiple access is continuously gaining more and more interest due to its
       potential for improved information security, simplified and decentralized network control, improved
       spectral efficiency and increased flexibility in the granularity of bandwidth that can be provided.
    The main difference of O-CDMA systems from wireless CDMA is the code structure. Optical
       systems are mainly intensity modulated and hence the chips in the O-CDMA system are alternating
       ‘1’s and ‘0’s instead of '-1’s and '+1’s In Optical CDMA system, each bit is divided up into n time’s
       periods called chips.
    An optical signature sequence or codeword is created, by sending a short optical pulse during some
       chip interval but not for others. Each user on the O-CDMA system has a unique signature sequence.
    The encoder of each transmitter represents each “1” bit by sending the signature sequence where as
       binary “0” bit is represented by all zero sequence. Since each bit of the original signal is represented
       by a pattern of lit and unlit chips, the bandwidth of the data stream is increased
Optical CDMA is therefore a spread spectrum technique. The optical CDMA encoded data is then sent to
the N x N star coupler in a local area network or 1 x N coupler in an access network and broadcast to all
nodes as shown in fig.
In optical CDMA, different users whose signals may be overlapped both in time and frequency share
common communication medium; multiple accesses is achieved by assigning unlike minimally interfering
code sequence to different transmitter, which must subsequently be detected in the presence of multiple
access interference from the users.
The crosstalk between different users sharing the common fiber channel known as the multiple access
interference is usually the dominant source of bit errors in an O-CDMA systems.
The intelligent design of the code word sequence is important to reduce the contribution of MAI to the total
received signal. Performance of O-CDMA communications is clearly dependent on the Multiple User
Interface, the type of modulation used and the receiver topology.
Coherent and Incoherent OCDMA OCDMA system can be classified as
    coherent
    incoherent
   Depending on the nature of superposition of the optical signal.
    Incoherent systems use intensity-modulation/direct-detection (IM-DD) receivers that detect the power
   of the optical signal but not the instantaneous phase variations of the optical signal. Thus uses the
   presence of light signal energy or no light signal energy to represent the binary “1” and “0”. Incoherent
   OCDMA systems use only uni-polar codes.
    In coherent OCDMA system, the phase information of the optical carrier is crucial for the dispreading
   process. It increases the complexity of receiver. However the performance of the coherent system is
   superior to the incoherent since the receiver are more sensitive to signal to noise ratio, which makes the
   overall system performance better. Early O-CDMA networks were developed based upon code
   sequences of incoherent pulses and intensity modulation. The signals were therefore uni-polar with no
   negative components due to the incoherent nature of the system. Each user had a unique spreading
   sequence: coded transmission was sent to represent data bit “1” and null was used for a “0” bit.
   Nevertheless, the signature codes used, i.e. optical orthogonal codes (OOCs), generally had much
   poorer correlation properties than their bipolar counterparts, and their availability was severely
   restricted. Later coherent systems often relied on phase coding of the optical signal field and coherent
   detection. Bipolar signaling was used in the form of ‘+1’ or ‘-1’, which could be obtained by
   manipulating the polarization or phase of the optical coherent carrier signal. B.
   A. Synchronous and Asynchronous OCDMA: The optical CDMA system may be synchronous or
       asynchronous.
       In a synchronous OCDMA (S-OCDMA) the bit and chip are synchronized and the receiver
       examines the correlator output only at one instant in the chip interval. The codeset for S-OCDMA
       are described by the (N, w, λ). S-OCDMA dramatically improves efficiency by trading off between
       code length, MAI and address space. In the asynchronous OCDMA the bit are not synchronized but
       the chips may be transmitted synchronously. The codeset for A-OCDMA are described as (N, w, λa
       , λc). The cardinality of /Ca / for A-OCDMA can be used as a codeset of Cs with (N, w, max (λa ,
       λc)) and cardinality /Cs / = n. /Ca / for S-OCDMA, since each of the n time shifts of each code
       sequence of Ca can be used as a unique code sequence in Cs with the same correlation properties.
OCDMA for PON and LAN In data communication systems, the access network directly link with the
customer premises and is responsible for delivering and collecting traffic.
Optical access network can be categories into two:
      Active optical network (AON)
      Passive optical network (PON)
In AON electrical de-multiplexer are used where as in PON optical de-multiplexer are employed. PON
avoid the effect of electromagnetic interference and thunder, economize the cost of operation and
maintenance, very good transparency and is suitable for signals with any format and any bit rate, thus
provide improved reliable systems. In fiber-to-the-home (FTTH) application, optical access networks are
considerable choice. The all optical CDMA system is usually a fiber optic non-coherent system. It usually
has no separate modulation operation
The combination of three potential advantages makes OCDMA attractive from a networking perspective:
i. Large channel count.
ii. Asynchronous transmission simplifies access control to the medium.
iii.Multiclass multi-rate services can be implemented by using variable code lengths code weight
System Parameters Various parameters to be considered in the design and implementation of OCDMA
communication systems - are:-
 a) Bit rate
b) Chip rate
c) Power handling
d) Processing gain
e) Multiple access interference
OPTICAL CDMA CODING TECHNIQUE
In order to implement OCDMA communication network, address codes with sufficient performance are
required. OCDMA is the use of optical network technology to arbitrate channel access among multiple
network nodes in a distributed fashion.