BES00002 Practice Problems
BES00002 Practice Problems
Question Bank
BRAINWARE UNIVERSITY
Question Bank with Model Answer
Programme – B.Tech.(CSE)-AIML-2024
Course Name – Basic Electrical and Electronics Engineering
Course Code - BES00002
*** Multiple Choice Type Questions ***
1.
(i) Indicate the correct option for the type of electrical device a Transformer is;
a) Resistor b) Capacitor
c) Inductor d) Diode (Correct Answer)
(viii) Identify the material with lots of free electrons from below.
(x) Select from the following, the one that's not a type of energy source:
a) Current b) Voltage
c) Resistance d) All of the above (Correct Answer)
(xii) Select the event that occurs as a current through the coil of an electromagnet is reversed
a) direction of the magnetic field remains unchanged b) direction of the magnetic field reverses (Correct Answer)
c) magnetic field expands d) magnetic field collapses
(xiii) Select the power percentage efficiency of supply produced by a 0.6 W output with an input of 0.7 W.
a) 8.57% b) 42.85%
c) 4.28% d) 85.7% (Correct Answer)
(xiv) A 220 resistor dissipates 3 W. Calculate the voltage.
a) 73.3 V b) 2.5 V
c) 25.7 V (Correct Answer) d) 257 V
a) 480 mW b) 0.480 W
c) 480,000 µW d) All of them (Correct Answer)
(xvii) State the change occurring due to the reversal of the current through the coil of an electromagnet.
a) direction of the magnetic field reverses (Correct Answer) b) direction of the magnetic field remains unchanged
c) magnetic field expands d) magnetic field collapses
(xix) Identify the value of efficiency of a circuit under maximum power transfer condition
(xx) Thevenin's theorem states that any bilateral network may be swapped out for a network with
a) An independent current source in parallel to the equivalent b) An independent voltage source in series with the equivalent
resistance resistance (Correct Answer)
c) An independent voltage source in parallel to the resistance d) None of these
(xxi) Choose the time period of a sine wave that goes through 10 cycles in 20 s;
(xxii) Choose the correct option; the peak value divided by the RMS value gives us
a) the magnitude and a quantity direction (Correct Answer) b) the width of a quantity
c) the phase angle d) the magnitude of a quantity
(xxv) Indicate, Which of the following expressions doesn’t represent the correct formula for Drift current density.
a) J = σE b) J = qnµE
c) J = µE (Correct Answer) d) None
(xxvi) Describe, the tendency of charge carriers to move from a region of heavily concentrated charge to a region of less
concentrated charge is known as:
(xxix) Identify which of the following atoms can act as donors in Si:
a) As (Correct Answer) b) In
c) Ga d) P
a) near the conduction band-edge (Correct Answer) b) near the valence band edge
c) at the middle of the forbidden gap d) near the valence band-edge
(xxxi) Select that a Semiconductor has temperature coefficient of resistance is
a) positive b) zero
c) negative (Correct Answer) d) None of these
a) equals the number of holes (Correct Answer) b) is greater than the number of holes
c) is less than the number of holes d) None of these
a) above the centre of the energy gap b) below the centre of the energy gap
c) in the middle of the energy gap (Correct Answer) d) anywhere in the energy gap
(xxxix) State that the process of adding impurities to an intrinsic semiconductor is called
a) annealing b) etching
c) doping (Correct Answer) d) alloying
(xl) State the electric field between acceptor and donor ions in a PN junction with no external voltage.
a) Has low resistance in forward as well as reverse directions b) Has high resistance in forward as well as reverse directions
c) Conductors in the forward direction only (Correct Answer) d) Conducts in the reverse direction only
a) One b) Two
c) Three (Correct Answer) d) Four
(xliii) Identify the doping level associated with Zener breakdown in a Zener diode.
a) Lowest b) Moderate
c) High (Correct Answer) d) Low
(xlviii) State what the Peak Inverse Voltage (PIV) of a half-wave or full-wave rectifier always is.
a) Greater than the input voltage b) Smaller than the input voltage (Correct Answer)
c) d) Greater than the input voltage for full wave rectifier and
Equal to the input voltage
smaller for the half wave rectifier
(xlix) Identify the correct option when a PN junction is said to be forward biased.
a) high resistance when forward or reverse biased b) low resistance when forward or reverse biased
c) high resistance when reverse biased and low resistance when d) high resistance when forward biased and low resistance when
forward biased (Correct Answer) reverse biased
(liii) Select the function that is most applicable for a voltage regulator circuit.
a) Converts the DC voltage into AC voltage. b) Converts the AC voltage into DC voltage.
c) d) Maintains a constant DC output voltage in spite of the
Smoothens the AC variations in DC output voltage. fluctuations in AC input voltage or load current. (Correct
Answer)
(liv) Identify the equation used to describe the static VI characteristics of a junction diode.
a) Increases with the load current b) increases with the load resistance
c) remains constant with the load current (Correct Answer) d) has the lowest value
a) ∆I / ∆V b) V / I
c) I / V d) ∆V / ∆I (Correct Answer)
(lix) Determine what happens to dynamic resistance if the slope of the I-V characteristic curve is steep.
(lx) Determine the value of peak reverse voltage (P.I.V.) if the full-wave rectifier has an alternating voltage of 300 V.
(lxi) Determine the ripple frequency of a bridge full-wave rectifier if the input frequency is 50 Hz.
a) 45Hz b) 50Hz
c) 100Hz (Correct Answer) d) 200Hz
(lxii) Calculate the total current in the semiconductor diode if the drift current is 100 mA and the diffusion current is 1 A.
(lxiii) Compute the DC load current for a full-wave rectifier with a load resistance of 5 kΩ, an inductor filter of 15 henry, a
peak applied voltage of 250 V, and a frequency of 50 cycles per second.
a) 0.7 mA b) 17 mA
c) 10.6 mA (Correct Answer) d) 20 mA
(lxiv) Determine the DC output voltage of a single-phase full-wave rectifier with a pi-section filter using 10 µF capacitors and
a 10 henry choke, a secondary voltage of 280 V, and a load current of 100 mA when the frequency is 50 Hz.
a) 243 V b) 345 V
c) 346 V (Correct Answer) d) 521 V
(lxv) Calculate the ripple factor for a CLC filter with an operating frequency of 50 Hz, 10 µF capacitors, a load resistance of
3460 Ω, and an inductance of 10 henry.
(lxvi) Calculate the current when a forward potential of 10V is applied to a Si diode in series with a 1 kΩ resistor.
(lxvii) Calculate the barrier potential at 125°C, given that it is 0.7V at room temperature (25°C).
(lxviii) Calculate the maximum voltage across each reverse-biased diode in a bridge-type full-wave rectifier, given that 𝑉𝑚 is
the peak voltage across the secondary of the transformer.
a) Vm (Correct Answer) b) 2 Vm
c) Vm/2 d) Vm/√2
a) zero b) unity
c) more than unity d) less than unity (Correct Answer)
a) VA b) Watt
c) VAR (Correct Answer) d) Ohm
a) Henry b) mili-Henry
c) Weber d) Ohm (Correct Answer)
(lxxiii) Choose the value that comes on dividing peak value by the RMS value;
(lxxv) Choose from the following the law on which KCL is based:
(lxxvi) Choose from the following the law on which KVL is based:
(lxxvii) Recognize how the location of the Zener region can be controlled in the diode characteristic curve.
a) Phase voltage is equal to line voltage, and phase current is b) Phase voltage is square root three times line voltage, and
three times the line current. phase current is equal to line current. (Correct Answer)
c) Phase voltage is equal to line voltage and line current is equal d)
None of these.
to phase current.
a) Line current is equal to phase current. b) Line voltage is equal to phase voltage. (Correct Answer)
c) Line voltage and line current are zero. d) None of these.
(lxxx) Identify which of the following is kept fixed in a transformer;
a) Voltage b) Current
c) Frequency (Correct Answer) d) None of these
(lxxxi) Identify the way by which the windings of a transformer are coupled;
(lxxxvi) The time period of a sine wave is 0.04 sec. Choose the value of frequency:
a) 50 b) 25 (Correct Answer)
c) 5 d) 2.5
(lxxxvii) Cite the particular DC motor that cannot be started with 'no-load'.
(lxxxviii) Estimate the reason for laminating the core of a transformer or a three-phase induction motor is to reduce;
(lxxxix) Select the value of percentage of slip of a three-phase induction motor at starting;
a) To limit high starting current (Correct Answer) b) To limit the starting speed
c) Both 1 and 2 d) None of these
a) voltage b) current
c) frequency (Correct Answer) d) None of these
(xciii) A transformer has voltage rating of 220/110 volt. Interpret the correct option;
(xcvi) Select the type of loss which is not present in the transformer;
(c) Using a two-wattmeter method with identical values, choose the power factor in a three-phase power measurement;
(cii) Calculate the peak value of a sine wave if the RMS value is 100 A.
(ciii) Choose the appropriate choice for the material that the induction motor shaft is composed of.
(civ) Predict the right choice. Laminating the stator core of a three-phase induction motor lowers the
(cviii) Select the correct option. In a 3-phase squirrel cage induction motor;
(cix) Select the value of synchronous speed of a three phase induction motor with 4 pole and supply frequency of 50 Hz.
(cx) Select the no-load speed of the following DC motor that will be highest.
(cxii) Select the type of loss that is not present in the transformer.
(cxvii) Select the amount of total power that is transferred inductively for a 20kVA transformer with a turn ratio of 0.4;
a) 10 kVA b) 8 kVA
c) 50 kVA d) 12 kVA (Correct Answer)
(cxix) An AC voltage is applied across a pure inductor. Identify the correct statement;
a) voltage leads current by 90 degrees (Correct Answer) b) current leads voltage by 90 degrees
c) current and voltage are in phase d) current lags voltage by an angle less than 90 degrees
(cxx) The self-inductance of a coil is 10 H. Choose the value of inductive reactance at 50 Hz from the following:
(cxxi) A sine wave has a frequency of 50 Hz. Indicate the value of angular frequency;
(cxxii) If current in a circuit is given by i=10 sin 314t, then estimate the RMS value of current.
a) 70.7 A b) 6.37 A
c) 7.07 A (Correct Answer) d) 5.23 A
(cxxiii) The active power consumed by a circuit is 120 W, while the apparent power consumed is 200 W. Select the value of the
power factor.
(cxxv) In the operation of an NPN transistor, indicate the region that electrons can cross:
(cxxvi) Illustrate which of the following are true for a PNP transistor.
a) the emitter current is less than the collector current b) the collector current is less than the emitter current
c) the collector current is less than the emitter (Correct d)
the holes are the minority charge carriers
Answer)
(cxxvii) Identify the type of amplifiers exhibit the current gain approximately equal to unity without any current amplification.
a) CE b) CC (Correct Answer)
c) CB d) None of these
a) CC amplifier has a large current gain b) CE amplifier has a large current gain (Correct Answer)
c) CB amplifier has low voltage gain d) CC amplifier has low current gain
(cxxxii) Identify the junction that is forward biased when transistor is used as an amplifier
(cxxxiii) Illustrate that in the active region the emitter-base junction is _______ biased and base-collector junction is ________
biased
(cxxxiv) Due to forward biasing of emitter-base junction, indicate ________ are induced into the base
(cxxxv) Identify the element that has the biggest size in a transistor is
(cxxxviii) Determine that most of the majority carriers from the emitter
a) IC = IE IB b) IB = IC IE
c) IE = IC − IB d) IE = IC IB (Correct Answer)
a) 100 b) 50
c) about 1 d) 200 (Correct Answer)
a) β=1/(1-α) b) β=1/(1 α)
c) β=α /(1-α) (Correct Answer) d) β=α /(1 α)
(cxlvi) Estimate the collector current for a C-E configuration with a beta of 100 and a base current of 30 microA?
a) emitter current (IE) versus collector-emitter voltage (VCE) b) collector current (IC) versus collector-emitter voltage (VCE)
with (VBB) base bias voltage held constant with (VBB) base bias voltage held constant (Correct Answer)
c) collector current (IC) versus collector-emitter voltage (VC) d) collector current (IC) versus collector-emitter voltage (VCC)
with (VBB) base bias voltage held constant with (VBB) base bias voltage held constant
(cxlviii) Illustrate the ratio of collector current by the base current is known as _______________ gain
(cxlix) Recall that the gate voltage in a JFET at which drain current becomes zero is called:
a) drain to source current b) drain to source current with gate shorted (Correct Answer)
c) drain to source current with gate open d) none of these
(cliii) Identify that if the reverse bias on the gate of a JFET increased, then width of the conducting channel
_________________ .
3. Compute the terms peak factor and form factor of a AC wave. What are their values for a sinusoidal AC wave?
Answer: Peak factor is defined as the ratio of peak or maximum value of an alternating quantity to its rms value. For a sinusoidal wave Ka = Im/Irms = 1.414.
sinusoidal wave, Kf = Irms/Iav = 1.11.
4. A circuit consists of a capacitor of 300 micro F alone connected across an alternating voltage of v=100 sin 100πt. Express the expression for current.
Answer: C = 300 micro F. Thus, XC = 1/ωC = 10.61 ohm. Thus, iC = Vm/Xc sin(100 π t + π /2) = 100/10.61 sin(100 π t + π /2) = 9.425sin(100 π t + π /2).
5. When a certain inductive coil is connected to a DC supply at 200 V, the current in the coil is 10 A. When the same coil is connected to an ac supply at 200 V, 5
Answer: For DC, the reactance of the coil is zero (as f=0). Thus, resistance of the coil = 200/10 = 20 ohms. For ac supply, impedance=200/8 = 25 ohms. Thus, r
6.
7.
10. Explain the torque slip characteristic of three phase induction motor.
Answer: Torque-slip characteristics give the relation between torque and slip. The torque-slip characteristics show how the torque changes with a change i
actual speed of the rotor varies with loading condition. Therefore, the slip changes with loading condition. T=k(sR(E^2))/((R^2)+((sX)^2)).Low slip region, High slip
T=ks hence the curve is linear in nature
13. If a 4 pole lap wound DC shunt motor is having the input voltage of 15 V and armature resistance of 1 Ohm. Calculate the value of armature current. When t
conductors is 80.
Answer: Eb=(P*Phi*Z*N)/(60*A), where Eb=back emf, P=No. of pole, Phi=flux per pole in Wb(m^(-2)), Z= total no. of conductors, N=speed in rpm, A= no. of
Vin=15 V, Armature current= (V-Eb)/Ra=(15-13.33)/1=1.66A
14. A single phase transformer has 500 primary and 1000 secondary turns. The net cross sectional area of the core is 50 cm2. If the primary winding is connecte
Answer: V1 = 4.44 x phi_m x f x N1. Thus, phi_m = 400/50 x 4.44 x 500 = 3.6 x 10^-3. Bm = 3.6 x 10^-3/50 x 10^ (-4) = 0.72 Wb/m^2
15.
Answer: <table border="0" cellpadding="0" cellspacing="0" width="242" style="border-collapse: collapse;width:182pt"> <tbody> <tr height="20" style="
core type construction of the transformer, the magnetic core consists of two vertical lags called limbs and two horizontal sections called yokes. In order to reduce th
low voltage (lv) winding is placed next to the core and the high voltage (hv) winding is placed around the low voltage winding. This reduces the requirement of insula
known as concentric winding or cylindrical winding. The core type construction of transformer is easier to dismantle for maintenance. The natural cooling is good i
small output applications.</td> </tr> </tbody> </table>
17. Calculate the magnetizing and core loss component of currents, if no load current (I0)=1A, and no load power factor is 0.2.
Answer: "Im= I0sinø =0.96A Ic=I0cosø=0.2A "
19. Explain the steps of Norton's theorem for finding the current through load resistance.
Answer: 1) Remove the load resistance. 2) Replace by short circuit. 3) Calculate the current flowing through the short circuit (IN). This is called Norton\'s eq
resistances and find the equivalent resistance of the circuit as seen from the open terminals. This is called Norton\'s equivalent resistance (RN). 5) Draw the Norton
calculate the load current using current division rule
20. A sine wave has a frequency 50 Hz, rms volage is 30V. Construct the equation of voltage.
Answer: Vrms = 30 V. Thus, Vm = 1.414 x 30 = 42.42 V. Thus equation of voltage = 42.42 sin 2 x 3.14 x 50 x t = 42.42 sin 314t
22. Explain reason of making the terminals of current sources are open ciruited and the terminals of voltage source is short circuited during the execution of the
Answer: Both the sources replaced by its internal resistance... Voltage source have internal resistance equal to zero,hence it replaced by short circuit. While
open circuit.
27. Write one example each of linear element, non linear element.
Answer: Example of linear element is resistor. Example of non-linear element is transistor. Example of unilateral element is diode.
28. Explain the terms peak factor and form factor of a AC wave. What is their values for a sinusoidal AC wave?
Answer: Peak factor is defined as the ratio of peak or maximum value of an alternating quantity to its rms value. For a sinusoidal wave Ka = Im/Irms = 1.414.
sinusoidal wave, Kf = Irms/Iav = 1.11.
29. Explain the terms phase sequence, line voltage and phase current in relation to three phase circuits
Answer: Phase sequence is defined as the sequence in which the three voltages or currents in a three phase system attain their maximum values. The pot
called line voltage. The current flowing through any phase in a three phase circuit is called phase current.
30. State the units of active power, reactive power and apparent power
Answer: Unit of active power: watts (W), unit of reactive power: volt -ampere reactive (VAR), unit of apparent power: volt-ampere (VA).
31. Consider a phase sequence R-Y-B. Considering R phase as the reference, write the voltage equation for the three phases.
Answer: Let Vm be the maximum voltage of each phase. Let ω be the angular frequency. Thus with R phase as the reference at any time t, the ltage equation
34. Describe the difference between node and junction in an electric circuit.
Answer: Node: The point in a network at which two or more circuit elements are joined. Junction: The point in a network at which three or more circuit elem
38.
Calculate the electrical conductivity of an intrinsic silicon semiconductor at 300 K. The mobility of electrons (µn) is 1350 cm2/V. s and the mobility of the holes (µp) is
Answer:
39. Explain the phenomenon of diffusion of current carriers in a semiconductor
Answer:
40. Estimate the conductivity and resistivity of pure Ge at 300K. Assume that at 300K intrinsic carrier concentration is 2.5x 1019m-3, electron mobility=0
Answer:
41. Establish the relationship between mobility and current density for a semiconductor.
Answer:
42. Establish the relationship between conductivity and current density for a semiconductor.
Answer:
43. Explain the construction of transistor with diagram.
Answer:
44. Illustrate Dynamic Input and Output Resistance and current gain in CB mode operation.
Answer:
45. Explain three terminals of a transistor.
Answer:
Answer:
47. Differentiate among Active region, Cut-off region and Saturation region at CB mode.
Answer:
Answer:
49. In a common base connection, current amplification factor is 0.9. If the emitter current is 1mA, determine the value of base current.
Answer:
50. A half-wave rectifier is used to supply 50 volts DC to a resistive load of 800 Ω. The diode has a resistance of 25 Ω. Calculate the AC voltage required.
Answer:
Answer:
52. Describe the formation of a barrier field across a p-n junction diode.
Answer:
Answer:
54. Represent the mathematical expression for the RMS value of the half-wave rectified cycle.
Answer:
Answer:
56. Describe the working of the p-n junction diode under forward and reverse bias conditions and state Schokley's equation.
Answer:
58. A center tap full wave rectifier supplies a load of 1 KΩ. The AC voltage across the secondary is 220 (RMS). If diode resistance is neglected, calculate t
Answer:
Answer:
60. Explain what are the applications of junction field effect transistors?
Answer:
The JFET is widely used in different applications due to its extraordinary features. Some of them are:
The junction field effect transistor (JFET) can be used as a switch, a chopper, or a buffer.
The JFET is used in oscillatory circuits and cascade amplifiers.
It can be used as a voltage control resistor, a high input impedance amplifier, a differential amplifier, a low noise amplifier, and a constant current source.
Answer:
As the reverse bias is further increased, the effective width of the channel decreases, the depletion region or the space charge region wi
the source to drain. Finally at a certain gate to source voltage VGS = VP.
64. A 6-pole lap wound shunt motor has 500 conductors in the armature. The resistance of armature path is 0.05 ohm. The resistance of shunt field is 25 ohm.
0.02 Wb.
Answer: Shunt field current Ish= V/Rsh=100/25=4 A. Armature current Ia=IL-Ish=120-4=116 A. Back emf Eb=V-IaRa=100-116*0.05=94.2 V. Speed of mo
65. A 6-pole lap wound shunt motor has 500 conductors in the armature. The resistance of the armature path is 0.05 ohm. The resistance of the shunt field is 2
per pole is 0.02 Wb.
Answer: Shunt field current Ish= V/Rsh=100/25=4 A. Armature current Ia=IL-Ish=120-4=116 A. Back emf Eb=V-IaRa=100-116*0.05=94.2 V. Speed of mo
66. A 11 kV/400 V distribution transformer takes a no-load primary current of 1 amp at a power factor of 0.24 lagging. Calculate the core loss current, the magn
Answer: Exciting or no-load current, I0=1A. Primary voltage, V1 = 11kV = 11000 V. Core loss current, Ic=I0cos(Ⴔ)= 1*0.24=0.24A (Ans). Magnetizing cur
67. A 4 pole 220 V dc shunt motor has armature and shunt field resistance of 0.2 ohm and 220 ohm respectively. It takes 20 A at 220 v from the source while ru
Answer: Supply voltage V=220 V. Line current I=20 A. Armature resistance Ra=0.2 ohm. Shunt field resistance Rsh=220 ohm. Speed N=1000 rpm. Sh
Eb=V-IaRa=216.2 V
68. Describe the discussion on the speed control methods of a DC shunt motor.
Answer: The back emf Eb of a DC motor is nothing but the induced emf in armature conductors due to rotation of the armature in the magnetic
PØNZ/60A. (where, P = no. of poles, Ø = flux/pole, N = speed in rpm, Z = no. of armature conductors, A = parallel paths). Eb can also be given as, Eb
constants Therefore, N ∝ K Eb/Ø (where, K=constant). This shows the speed of a DC motor is directly proportional to the back emf and inversely p
speed of a DC motor is inversely proportional to the flux per pole. Thus by decreasing the flux, speed can be increased and vice versa. To control the fl
more resistance in series with the field winding will increase the speed as it decreases the flux. In shunt motors, as the field current is relatively
increased above the rated value by reducing flux with this method, it puts a limit to maximum speed as weakening of field flux beyond a limit wi
directly proportional to the back emf Eb and Eb = V - IaRa. That means, that when the supply voltage V and the armature resistance Ra are kept con
in series with the armature, Ia decreases and, hence, the speed also decreases. Greater the resistance in series with the armature, greater the decre
field is connected to a fixed exciting voltage and armature is supplied with different voltages. Voltage across armature is changed with the help of su
b) Ward-Leonard System: This system is used where very sensitive speed control of the motor is required (e.g. electric excavators, elevators, etc.).
69. A transformer has 200 turns in the primary coil and 800 turns in the secondary coil. If the primary current is 4A, estimate the secondary current (assuming a
Answer: "Turns ratio = Np/Ns = 200/800 = 1/4 Ip/Is = Ns/Np Is = Ip * (Np/Ns) = 4A * (1/4) = 1A "
70. A transformer core has a maximum flux density of 1.2 T. The core cross-sectional area is 50 cm². The primary winding has 500 turns. If the supply frequency
Answer: "The maximum flux: B = Φ/A Φ = B * A = 1.2 T * (50 * 10^-4 m²) = 0.006 Wb The maximum induced EMF Emax = 4.44 * f * N * Φ = 4.44 * 50 H
71. A transformer has 2000 turns on the secondary winding and produces a maximum induced EMF of 311.1 V. The supply frequency is 60 Hz. Calculate the ma
Answer: Rearrange the EMF equation to solve for maximum flux: Φ = Emax / (4.44 * f * N) Φ = 311.1 V / (4.44 * 60 Hz * 2000 turns) = 0.000585 Wb
72. Describe different types of losses occurring in a transformer. Define the process to reduce eddy current loss
Answer: Transformer losses primarily consist of core losses and copper losses. Core losses, further divided into hysteresis and eddy current losses,
caused by the resistance of the windings, vary with the square of the load current. Lamination is the primary method to reduce eddy current loss in
thin sheets or laminations. 2. Insulation: These laminations are insulated from each other using a thin layer of varnish or oxide. 3. Current Path: Whe
(eddy currents). However, the laminations offer high resistance to these currents due to their thin thickness and insulation. 4. Reduced Eddy Curre
the associated power loss. By limiting the path for eddy currents to flow, lamination effectively decreases their magnitude and consequently reduces
silicon steel have higher resistivity than pure iron, reducing eddy current flow. • Lowering operating frequency: As eddy current loss is proportio
However, this is often not practical for most applications.
73. A magnetic circuit having 150 turns coils and the cross-sectional area and length of the magnetic circuit are 5*10^-4 m^2 and 25*10^-2 m respectively. Dete
0.3*10^-3 wb
Answer: "I=2A MMF=NI=150*2=300 AT H=NI/l=300/(25*10^-2)=1200A/m B=(flux(∅))/(area(a))=(0.3*10^-3)/(5*10^-4)=0.6T µ=B/H=0.6/1200=500*10
77. Describe the significance of the hysteresis loop in a B-H curve. Describe the factors affecting the shape and area of the hysteresis loop.
Answer: "The hysteresis loop in a B-H curve is a graphical representation of the relationship between magnetic flux density (B) and magnetic field
provides valuable insights into the magnetic properties of a material. Significance of the hysteresis loop: • Hysteresis loss: The area of the hysteresis
larger area indicates higher energy loss, which is undesirable in many applications. • Retentivity: The point on the B-axis when H is reduced to ze
magnetizing field is removed. • Coercivity: The point on the H-axis when B is reduced to zero is called coercivity. It represents the magnetizing force
hysteresis loop: • Material composition: Different materials exhibit different hysteresis loops. Ferromagnetic materials with higher permeability tend
the hysteresis loop. • Magnetic history: The previous magnetic state of the material can influence the shape of the loop. • Grain size: Smaller grain si
Answer: Let the two loop currents be I1 and I2. Applying KVL in loop 1 (left hand loop) 100 - 5I1 - 6(I1 - I2) = 0 or, 11I1 - 6 I2 = 100 (1) Applying KVL in
get, I1 = 10.4 A and I2 = 2.6 A
79. Calculate the current through 8 ohm resistance using thevenin's theorem.
Answer: Removing the load resistance and calculating Vth =100- 100/11 x 5 = 54.55 V Removing the voltage and replacing it by a short circuit. Then, R
Answer: Let I! and I2 be the loop currents (clockwise) Applying KVL to loop 1 (left hand loop) 10 - 10 I1 -25 (I1 - I2) - 5 I1 = 0 or, 8 I1 - 5 I2 = 2 (1) Appl
(1) and (2) we get, I2 = -0.48 A. Thus the actual direction of current will be opposite to that assumed. Thus current through 15 ohm resistor is 0.48 A.
Answer: Loop currents are considered as I1, I2, I3 for loop 1, 2, 3, respectively. the corresponding loop equations are formed as, 140(I1)-50(I2)-30(I3
det=601000; det1=991000;det2=1275000; det3=897000. Therefore, I1=det1/det=991000/601000=1.64A. I2=det2/det=1275000/601000=2.12A. I3=d
82.
Answer: Node: point in a network at which two or more circuit elements are joined, Juntion: point in a network at which three or more circuit eleme
=4, branch= 9
84. An alternating voltage is given by the equation v = 282.4 sin (377t + π/6). Calculate rms value, frequency and the time period.
Answer: Vm = 282.84 V. Thus, Vrms = 0.707x282.84 = 200V. ω = 377 rad/s, f = 377/2π = 60 Hz. T=1/f = 0.0167 s
85. A circuit consists of a capacitor of 300 micro F alone connected across an alternating voltage of v=100 sin 100πt. Estimate the expression for current.
Answer: C = 300 micro F. Thus, XC = 1/ωC = 10.61 ohm. Thus, iC = Vm/Xc sin(100 πt + π/2) = 100/10.61 sin(100 πt + π/2) = 9.425sin(100 πt + π/2)
88. A 10 V voltage source with 1 ohm internal resistance is connected with load resistance of 4 ohm. Calculate the values of the Thevenin equivalent resistance
Answer: step 1: remove load resistance. Step 2: Open circuit the removed load resistance terminals and find the open circuit voltage i.e., 10 V. Step
resistance is 1 ohm. Therefore, Vth=10 V and Rth=1 ohm and load current = Vth/(Rth+Rl)=10/(1+4)=2A.
89. Distinguish between intrinsic and extrinsic semiconductors and explain the term "Doping"
Answer:
90. Explain the Drift current and Diffusion current in a semiconductor device.
Answer:
91. Explain intrinsic and extrinsic semiconductors and describe the crystal structure for both the cases.
Answer:
92. A silicon semiconductor is doped with a donor impurity concentration of 5×1015cm−3. Assuming complete ionization, calculate the electron and
Answer:
93.
Answer:
Answer:
Answer:
Answer:
98. Develop the circuit connection of a transistor in CC configuration and discuss about current amplification factor in CC configuration.
Answer:
Answer:
100. A transistor is connected in common emitter (CE) configuration in which collector supply is 8 V and the voltage drop across resistance RC connected
voltage (ii) base current.
Answer:
101. In a common base connection, α = 0.95. The voltage drop across 2 kΩ resistance which is connected in the collector is 2V. Find the base current.
Answer:
102.
Answer:
Replace 60V voltage source with internal resistance of 0.5Ω
RT=((R1+r)×R3/(R1+r)+R3)+R2
RT=((0.5×24)×12/(0.5+24)+12)+10
RT=14.1Ω
I′2=V2/RT=48/14.1
I′2=3.4 A
I′3=I′2×(V+R1/(V+R1)+R3))
I′3=3.4×((0.5+24)/(0.5+24)+12))
I′3=3.4×0.67I3′=3.4×0.67
I′3=2.278A
I′1=I′2−I′3
I′1=3.4−2.278
I′1=1.122 A
I′′2=(2×10)/22=0.91 A
I2=(2×12)/22=1.091 A
2 - 0.875 = 1.0125 A
I12=I′12+I′′12
I12=0.91+1.785=2.695 A
103. In a bridge-type rectifier circuit, the diodes are assumed to be ideal. Assume primary to secondary turns to be 4. Given, R.M.S. primary voltage
voltage, (ii) PIV, (iii) output frequency.
Answer:
104. 230 V, 50 Hz AC voltage is applied to a bridge rectifier through a step-down transformer (4:1). Load resistance connected to the rectifier is 1 kilo
power delivered to the load.
Answer:
105. An AC supply of 230 volts is applied to a half-wave rectifier circuit through a transformer with a turn ratio of 10:1. Calculate: (i) output DC voltage, (i
Answer:
106. A crystal diode having internal resistance rf = 20 Ω is used for half-wave rectification. If the applied voltage is v = 50 sinωt and the load resistance
(iv) efficiency of rectification.
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108. Justify at room temperature (t = 25 oC) that the junction resistance of an diode (rj) is equal to 26/IF, where IF is the forward current, and consider η =
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109. Justify the DC output power is maximum in a half-wave rectifier when the load resistance is equal to the forward resistance.
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110. Explain the effects of temperature on diode current.
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112. Compare various types of filter circuits (L, C, LC, and π filter).
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114. Explain the working principle of JFET.
When a voltage VDS is applied between drain and source terminals and voltage on the gate is zero as sh
layers.
Fig.1a
The electrons will flow from source to drain through a channel between the depletion layers.
The size of the depletion layers determines the width of the channel and hence current conduction through
Case-b:
When a reverse voltage VGS is applied between gate and source terminals, as shown in fig.1(b), the width
Fig.1 b
This reduces the width of conducting channel, thereby increasing the resistance of n-type bar.
On the other hand, when the reverse bias on the gate is decreased, the width of the depletion layer also decr
This increases the width of the conducting channel and hence source to drain current.
A p-channel JFET operates in the same manner as an n-channel JFET except that channel current carriers w
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