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MJL0281A (NPN)
MJL0302A (PNP)
Preferred Devices

Complementary NPN−PNP
Power Bipolar Transistors
These complementary devices are lower power versions of the
popular MJL3281A and MJL1302A audio output transistors. With http://onsemi.com
superior gain linearity and safe operating area performance, these
transistors are ideal for high fidelity audio amplifier output stages and 15 AMPERES
other linear applications.
COMPLEMENTARY SILICON
Features
POWER TRANSISTORS
• Exceptional Safe Operating Area
260 VOLTS − 180 WATTS
• NPN/PNP Gain Matching within 10% from 50 mA to 3.0 A
• Excellent Gain Linearity
• High BVCEO
• High Frequency TO−264
• Pb−Free Packages are Available* CASE 340G
STYLE 2
Benefits
• Reliable Performance at Higher Powers
• Symmetrical Characteristics in Complementary Configurations
• Accurate Reproduction of Input Signal MARKING DIAGRAM
• Greater Dynamic Range
• High Amplifier Bandwith
Applications
MJL0xxxA
• High−End Consumer Audio Products AYYWWG
♦ Home Amplifiers
♦ Home Receivers
• Professional Audio Amplifiers 1 BASE 3 EMITTER

♦ Theater and Stadium Sound Systems 2 COLLECTOR

♦ Public Address Systems (PAs)
MJL0xxxA = Device Code
MAXIMUM RATINGS xxx = 281 or 302
Rating Symbol Value Unit A = Location Code
YY = Year
Collector−Emitter Voltage VCEO 260 Vdc WW = Work Week
Collector−Base Voltage VCBO 260 Vdc G = Pb−Free Package
Emitter−Base Voltage VEBO 5.0 Vdc
ORDERING INFORMATION
Collector−Emitter Voltage − 1.5 V VCEX 260 Vdc
Collector Current − Continuous IC 15 Adc Device Package Shipping
Collector Current − Peak (Note 1) 30
MJL0281A TO−264 25 Units/Rail
Base Current − Continuous IB 1.5 Adc
MJL0281AG TO−264 25 Units/Rail
Total Power Dissipation @ TC = 25°C PD 180 Watts (Pb−Free)
Operating and Storage Junction TJ, Tstg −  65 to +150 °C MJL0302A TO−264 25 Units/Rail
Temperature Range
MJL0302AG TO−264 25 Units/Rail
Stresses exceeding Maximum Ratings may damage the device. Maximum (Pb−Free)
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability. Preferred devices are recommended choices for future use
1. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle < 10%. and best overall value.

*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting
Techniques Reference Manual, SOLDERRM/D.

© Semiconductor Components Industries, LLC, 2006 1 Publication Order Number:

June, 2006 − Rev. 1 MJL0281A/D
 MJL0281A (NPN) MJL0302A (PNP)

THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit
Thermal Resistance, Junction−to−Case RqJC 0.69 °C/W

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage VCEO(sus) 260 − V
(IC = 30 mA, IB = 0)
Collector Cutoff Current ICBO − 10 mA
(VCB = 260 V, IE = 0)
Emitter Cutoff Current IEBO − 5.0 mA
(VEB = 5.0 V, IC = 0)

ON CHARACTERISTICS
DC Current Gain hFE −
(IC = 0.5 A, VCE = 5.0 V) 75 150
(IC = 1.0 A, VCE = 5.0 V) 75 150
(IC = 3.0 A, VCE = 5.0 V) 75 150
Collector−Emitter Saturation Voltage VCE(sat) − 1.0 V
(IC = 5.0 A, IB = 0.5 A)
Base−Emitter On Voltage VBE(on) − 1.2 V
(IC = 5.0 A, VCE = 5.0 V)

DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product fT 30 − MHz
(IC = 1.0 A, VCE = 5.0 V, ftest = 1.0 MHz)
Output Capacitance Cob − 400 pF
(VCB = 10 V, IE = 0, ftest = 1.0 MHz)

200 100
180
IC, COLLECTOR CURRENT (A)

1.0 ms
PD, POWER DISSIPATION (W)

160
10 5.0 ms
140
10 ms
120 100 ms
100 1
DC
80
60
0.1
40
20
0 0.01
0 20 40 60 80 100 120 140 160 1 10 100 1000
TC, CASE TEMPERATURE (°C) VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 1. Power Derating Figure 2. Safe Operating Area

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 MJL0281A (NPN) MJL0302A (PNP)

500 500
VCE = 5.0 V VCE = 5.0 V
hFE, DC CURRENT GAIN

hFE, DC CURRENT GAIN

100°C 100°C

100 100
−25°C
25°C −25°C
25°C

10 10
0.05 0.1 1 10 50 0.05 0.1 1 10 50
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)

Figure 3. MJL0281A DC Current Gain Figure 4. MJL0302A DC Current Gain

1.4 2.4
VBE(on), BASE−EMITTER VOLTAGE (V)

VBE(on), BASE−EMITTER VOLTAGE (V)

VCE = 5.0 V VCE = 5.0 V
1.2
1.9
1
−25°C
0.8 1.4

0.6
25°C 0.9 −25°C
100°C
0.4
100°C
0.4
0.2
25°C
0 −0.1
0.01 0.1 1 10 100 0.01 0.1 1 10 100

IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)

Figure 5. MJL0281A Base−Emitter Voltage Figure 6. MJL0302A Base−Emitter Voltage

10 10
IC/IB= 10 IC/IB= 10
VCE(sat), COLLECTOR−EMITTER

VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)

SATURATION VOLTAGE (V)

1 1

100°C
25°C 100°C
0.1 0.1 25°C
−25°C

−25°C
0.01 0.01
0.01 0.1 1 10 100 0.01 0.1 1 10 100
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
Figure 7. MJL0281A Saturation Voltage Figure 8. MJL0302A Saturation Voltage

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 MJL0281A (NPN) MJL0302A (PNP)

60 70
VCE= 5.0 V VCE= 5.0 V
fT, CURRENT GAIN BANDWIDTH

fT, CURRENT GAIN BANDWIDTH

50 60

50
40
PRODUCT (MHz)

PRODUCT (MHz)
40
30
30
20
25°C 20 25°C

10 10

0 0
0.01 0.1 1 10 0.01 0.1 1 10
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
Figure 9. MJL0281A Current Gain Bandwidth Figure 10. MJL0302A Current Gain Bandwidth
Product Product

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 MJL0281A (NPN) MJL0302A (PNP)

PACKAGE DIMENSIONS

TO−3BPL (TO−264)
CASE 340G−02
ISSUE J

Q NOTES:
1. DIMENSIONING AND TOLERANCING PER
0.25 (0.010) M T B M −T− ANSI Y14.5M, 1982.
−B−
2. CONTROLLING DIMENSION: MILLIMETER.
C
MILLIMETERS INCHES
U E DIM MIN MAX MIN MAX
N A 28.0 29.0 1.102 1.142
B 19.3 20.3 0.760 0.800
C 4.7 5.3 0.185 0.209
A D 0.93 1.48 0.037 0.058
E 1.9 2.1 0.075 0.083
L F 2.2 2.4 0.087 0.102
R 1 2 3
G 5.45 BSC 0.215 BSC
H 2.6 3.0 0.102 0.118
J 0.43 0.78 0.017 0.031
P K 17.6 18.8 0.693 0.740
K L 11.2 REF 0.411 REF
N 4.35 REF 0.172 REF
P 2.2 2.6 0.087 0.102
Q 3.1 3.5 0.122 0.137
R 2.25 REF 0.089 REF
W U 6.3 REF 0.248 REF
F 2 PL
W 2.8 3.2 0.110 0.125
G
J
D 3 PL H STYLE 2:
PIN 1. BASE
0.25 (0.010) M T B S 2. COLLECTOR
3. EMITTER

PowerBase is a trademark of Semiconductor Components Industries, LLC (SCILLC)

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

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