993b9)019

K.VN.NAIK SHIKSHAN PRASARAK SANSTHA'S

ARTS, COMMERCE &SCIENCE COLLEGE V0t Class fyO BCSOO
Nashik -422 002. Batch RollNo.
PHYSICs /ELECTRONICS / COMPUTER SCIENCE
EXptNo. T 2Snno
3POtO LABORATORyoiD
Name Mayur Bbìkon a i l u a d c t to TU) DO22)
Title To SHUdy foDOrV fReLerse charocktistKS boib oV
Performed on. Submitted on 9b0ibD90) w0T(Vi)
enotDUTt20i 9vodO s t
Aim : TO SFudy Forward and rererse
pvi0ed
Charac Jer i StiCS of. P-n jUnCtion
diode. 99
App edo
nsapower suPPly votmerer, a mm erer,
diode,pesistor 13
20
Formula

Figure
kn
-mwwww

diode
o-5v)org
Incomplete Foros0e201p 9p0tioy 192e

N)9boib 190)S 90OHOU

1. Diagram
2. Calculation Forward bias Peo
3. Graph
4. Result

(o:/SV)s diocde
Initials

Rererse bias
 K.V.N.NAIK SHIKSHA
ARTS, COMMERC
Proced re - diode
Nash

and p-njunction PHYSICS ELECTRO

) connect ammet er, resistor LAB
in Series
Set vbage
) (onnec+ diode in ForwOrd biased dnd NameMOyrE
Title To SFUdy
from measre
Re cord cUrrent through circit and Performed on.
i) set votage
voltage across diode For the
reverse bjas a and FollOw
(iv) Now Conoect diode in
the bove instructions

Obsevation
CUrrent thrm
obs Voltage across
NO
vOlta9e 2ener diode (v) circui (MA)
G3
|:2 o- S 29 v
3. 2-S O6 37
4. 33
2

S2
63 2-95 MA
8 72 O 70 3-37 MA
9 76 O 706 37S mA
Reverse biás ww)

obs Set volta9 e across Curren thrm

No. vOl09 e 2ener diode (v) Circuit (mA)
0-003

3 2.3
3. 0
3070
3-6 3.S8 2
4.2|v
S3

6-79 0-09 OA
67
7:97 V
 KVN. NAIK SHIKSHAN PRASARAK SANSTHA'S
Class Ey Bca Cad
p-n junction dide ARTS, COMMERCE&SCIENCE COLLEGE
9Nashik - 422 002. DUTTS9 BatchA
Roll No,
25
DHYSICS I ELECTRONICS/ COMPUTER SCIENCEExpt. No,
d and set LABORATORY
voItQge Name _DayIr Bhilcaa Gaiuad942og
baoD
ond measre
Submitted on
491TL0)
Performed on
a5 HA Ond follO w .2 ov IK- 5
25309Ub 8-20U
or)3 mA
2-92 V
2 89
Urrent thrm 986v
13
r(uit (MA)
Theory;
Forward
bias o Of
Positive term)n u
When the
battery is Copne Cted
tob anode Ond ne9to
battery is (onneCHed
using
CtIve term)n Cu of Cud to
the diode is S
CCthode of diode,These COuse poterpticu
be forward bìas ol}a9e iS
dnd as He
barrier to decreqse
thinoer dnd
iocreased +he barier.9es
on Tegion
S mA thioner and thys deplect)
and o3V for
vanishbes (07V) For Silicon
germoniUm). n ore
Incomplete For PrOcesS Contin eoS are as
This supp1:
thrm 1. Diagram more hples and leCTons are
(mA) land ermioa of
2.Calculation by the P0Si+ive, n egative CUrreut
led
3. Graph Ond Q lar9e amO t oF
batrer
the oiode
4. Result
Flows through switch in
0ore as q close Ohich
Diode modeThe Poin of
Forcuord bia9 is
StortS increcsing Tapid ouy
lCurre
koown gs rnee Lolta9e.

Initials
 K.V.N. NAIK SHIKSHAN PRASARAK SANSTHA'Sa Class Ey B¢3
ARTS.COMMERCE &SCIENCE COLLEGE Roll No.
njunction diode Nashik - 422 002.
Batch A
2 5
PHYSICS /ELECTRONICS COMPUTER SCIENCE Expt.No.
LABORATORY
and Set oltQge
Gaibuadhey kt bao
Name NayIr 5hikaa
ond mes(re Fortnard ReseAse chcackriStics
Title To SHUdy
Performed on. Submitted on

IK- 5
10
O|2
2
8-20V
MA
2-92 v
|2 mA
g86v
Jrr ent thrm
r(uit (MA)
Theory:
forward bias - ferminu oF
Positive
When
batterY is
the
CoDneCted
ond neg
to anode(onneCted to
oE btery is
using
tive +ermio cu iS SCUd to
dìode, the diode
CCUhode oF cause poten+ìCu
be forward bias These oltage is
to decrease dng as the
borrier and
borier.9ges thìnoer
iocreased the Tegion
7 mA dep)ect)on
+hiooer Ond thys Silicon and O3v for
JS mA vanishes (07V) For
gernoniUm). as more
This ProcesS Contin eo uS Cre
Incomplete For SUPPl:
and elecrons Ore
thrm
(mA) 1. Diagram and rmore holes of
egative terminuCurreut
2. Calculation ed by the poSitIVe, n
larg e OmoUt oF
3. Graph batier Ond Q
the iode
4.Result |Flows through as q ClOsecpoin}
5witch
of whichl
0ork
Diode bigs mode The
|Fortuard rapidcñ y is
StartS inCrecsing
lcuret
Cnee Lolt qge.
known ds
Initials
 Reverse bigs
termin Cu oF bUery iS
Conn AR
thePositive
When
e9atie terminU b UHery is
ected to CaUHod e on n
diode,He iode iS
Connecie to anode of t u
saUd to be revers e bi as ed 2 eronCrretnfloos Expt.N
Very Smau) and ct m0St becaseo Graph
Smu)CrretFio0S
thro ugh diode
minctory chage carries
tese elechonS
At bigher re verse voltage
have high velociiy cohich can dis |odqemivauenes
eectrons From the Crystcy Stru cHre prducing
Pee Wechons
AM

This resue i5 increas e in reverse rret

this is caured b+eardocon and the o|+ a9e oF
ohich ?t o cCres is IcÐon as breaucdouon
SIUIO
elHaLge

Resuy
Thus we Studied p-njuncHon diode.

oitooioste0
 A
K.V.N. NAIK SHIKSHAN PRASARAK
baUery i5 Conn
bau baHery is
SANSTHA'S
e diode is
ARTS, COMMERCE &SCIENCE COLLEGE
Canada Corner, Nashik - 422 002.
PHYSICS IELECTRONICS COMPUTER SCIENCE
tFlOS LABORATORY Roll No. 25
Expt.No. Scale: on Xaxis:1 cm = |Omp
on X axis : 1cm =
Graph of P-n juncioo diode
ChonS oi)
vauences 'K-5
ucing
rret

eHoge
using
 K.V.N. NAIK SHIKSHAN
PRASARAK SANSTHA'S
ARTS, COMMERCE &SCIENCE COLLEGE
Canada Corner, Nashik - 422 002.
PHYSICS I ELECTRONICS/ COMPUTER SCIENCE
LABORATORY Roll No.
Expt.No. = :Solt
Scale: on X axis :1 cm amefer
on Xaxis:1 cmn= 1
Graph of P-n juncion diode

K- 5

using