R. C.
PATEL INSTITUTE OF TECHNOLOGY,
SHIRPUR
Department of Electronics &
Telecommunication Engineering
“ 5-Simulation Of EDC On Virtual Lab
Report”
Prepared by
Name : Tejas Govind Vadgaonkar
Roll No: 36
PRN: 231102032
Div : A
1.To design a touch sensor circuit using BJT transistor.
Aim of the experiment
To design a Touch sensor circuit using Bipolar Junction Transistor (BJT)
Procedure
1. Click on the Components button to place components on the table.
Fig. 1 Components
2. Make connections as per the circuit diagram or according to connection table.
Fig. 2 Circuit Diagram of Touch Sensor
Table 1: Connection table
3. Click on Check Connections button. If connections are right, click on 'OK',
then Simulation will become active.
4. Touch the Sensor by using mouse pointer and observe its output.
5. Click on the Reset button to reset the page.
2. VI Characteristics of a Diode
Aim of the experiment
At the end of the experiment, the student should be able to
Explain the structure of a P-N junction diode
Explain the function of a P-N junction diode
Explain forward and reverse biased characteristics of a Silicon diode
Explain forward and reverse biased characteristics of a Germanium diode
Procedure
Forward Bias-Si Diode
1. Set DC voltage to 0.2 V .
2. Select the diode.
3. Set the resistor.
4. Voltmeter is placed parallel to Silicon diode and ammeter series with resistor.
5. The positive side of battery to the P side(anode) and the negative of battery to the N
side(cathode) of the diode.
6. Now vary the voltage upto 5V and note the Voltmeter and Ammeter reading for
particular DC voltage .
7. Take the readings and note Voltmeter reading across Silicon diode and Ammeter reading.
8. Plot the V-I graph and observe the change.
9. Calculate the dynamic resistance of the diode. rd=ΔV/ΔI
10. Therefore from the graph we see that the diode starts conducting when the forward bias
voltage exceeds around 0.6 volts (for Si diode). This voltage is called cut-in voltage.
Figure:1
Forward biased characteristics of a Silicon diode
In forward biasing, the positive terminal of battery is connected to the P side and the negative
terminal of battery is connected to the N side of the diode. Diode will conduct in forward biasing
because the forward biasing will decrease the depletion region width and overcome the barrier
potential. In order to conduct, the forward biasing voltage should be greater than the barrier
potential. During forward biasing the diode acts like a closed switch with a potential drop of
nearly 0.6 V across it for a silicon diode. The forward and reverse bias characteristics of a silicon
diode. From the graph, you may notice that the diode starts conducting when the forward bias
voltage exceeds around 0.6 volts (for Si diode). This voltage is called cut-in voltage.
Reverse biased characteristics of a Silicon diode
In reverse biasing, the positive terminal of battery is connected to the N side and the negative
terminal of battery is connected to the P side of a diode. In reverse biasing, the diode does not
conduct electricity, since reverse biasing leads to an increase in the depletion region width; hence
current carrier charges find it more difficult to overcome the barrier potential. The diode will act
like an open switch and there is no current flow.
Forward biased characteristics of a Germanium diode
In forward biasing, the positive terminal of battery is connected to the P side and the negative
terminal of battery is connected to the N side of the diode. Diode will conduct in forward biasing
because the forward biasing will decrease the depletion region width and overcome the barrier
potential. In order to conduct, the forward biasing voltage should be greater than the barrier
potential. During forward biasing the diode acts like a closed switch with a potential drop of
nearly 0.3 V across it for a germanium diode. The forward and reverse bias characteristics of a
germanium diode. From the graph, you may notice that the diode starts conducting when the
forward bias voltage exceeds around 0.3 volts (for Ge diode). This voltage is called cut-in
voltage.
Reverse biased characteristics of a Germanium diode
In reverse biasing, the positive terminal of battery is connected to the N side and the negative
terminal of battery is connected to the P side of a diode. In reverse biasing, the diode does not
conduct electricity, since reverse biasing leads to an increase in the depletion region width; hence
current carrier charges find it more difficult to overcome the barrier potential. The diode will act
like an open switch and there is no currentflow.
3. BJT Common Emitter Characteristics
Aim of the experiment
At the end of the module the student would be able to explain
Explain structure of Bipolar Junction Transistor
Explain Operation of Bipolar Junction Transistor
Explain Common Emitter characteristics of a BJT
Procedure
BJT Common Emitter - Input Characteristics
1. Initially set rheostat Rh1 = 1 Ω and rheostat Rh2 = 1 Ω
2. Set the Collector-Emitter Voltage(VCE) to 1 V by adjusting the rheostat Rh2
3. Base Emitter Voltage(VBE) is varied by adjusting the rheostat Rh1.
4. Note the reading of Base current(IB)in micro Ampere.
5. Click on 'Plot' to plot the I-V characteristics of Common-Emitter configuration. A graph
is drawn with VBE along X-axis and IB along Y-axis.
6. Click on 'Clear' button to take another sets of readings
7. Now set the Collector-Emitter Voltage(VCE) to 2 V, 3 V, 4 V
Figure:1
Input Characteristics
The most important characteristic of the BJT is the plot of the base current, IB, versus the base-
emitter voltage,VBE, for various values of the collector-emitter voltage,VCE
IB=ϕ(VBE,VCE) ,for constant VCE
BJT Common Emitter - Output Characteristics
1. Initially set rheostat Rh1 = 1 Ω and rheostat Rh2 = 1 Ω
2. Set the Base current(IB)15 uA by adjusting the rheostat Rh1
3. Vary the Collector-Emitter Voltage(VCE)is varied by adjusting the rheostat Rh2.
4. Note the reading of Collector current(IC).
5. Click on 'Plot' to plot the I-V characteristics of Common-Emitter configuration. A graph
is drawn with VCE along X-axis and IC along Y-axis.
6. Click on 'Clear' button to take another sets of readings
7. Now set the Base Current(IB) to 20 uA
Figure: 2
The most important characteristic of the BJT is the plot of the collector current, I C, versus the
collector-emitter voltage, VCE, for various values of the base current, IB as shown on the circuit
on the right.
IC=ϕ(VCE,IB) ,for constant IB.
4. BJT Common Base Characteristics
Aim of the experiment
At the end of the module the student would be able to explain
Explain structure of Bipolar Junction Transistor
Explain Operation of Bipolar Junction Transistor
Explain Common Base characteristics of a BJT
Procedure
BJT Common Base - Input Characteristics
1. Initially set rheostat Rh1 = 1 Ω and rheostat Rh2 = 1 Ω
2. Set the Collector-Base Voltage(VCB) to 1 V by adjusting the rheostat Rh2
3. Base Emitter Voltage(VBE) is varied by adjusting the rheostat Rh1.
4. Note the reading of emitter current(IE)in m Ampere.
5. Click on 'Plot' to plot the I-V characteristics of Common-Base configuration. A graph is
drawn with VBE along X-axis and IE along Y-axis.
6. Click on 'Clear' button to take another sets of readings
7. Now set the Collector-Emitter Voltage(VCB) to 2 V, 3 V, 4 V
Figure:1
Input Characteristics
The most important characteristic of the BJT is the plot of the emitter current, I E, versus the base-
emitter voltage,VBE, for various values of the collector-base voltage,VCBIB=ϕ(VBE,VCE)for
constant VCB
Output Characteristics
The most important characteristic of the BJT is the plot of the collector current, I C, versus the
collector-base voltage, VCB, for various values of the emitter current, IE as shown on the circuit
on the right.
IC=ϕ(VCE,IE) ,for constant IE.
5. Studies on BJT CE Amplifier
Aim of the experiment
Studies on BJT CE Amplifier
The common emitter configuration is widely used as a basic amplifier as it has both voltage and
current amplification. Resistors RB1 and RB2 form a voltage divider across the base of the
transistor. The function of this network is to provide necessary bias condition and ensure that
emitter-base junction is operating in the proper region. In order to operate transistor as an
amplifier, biasing is done in such a way that the operating point is in the active region. For an
amplifier the Q-point is placed so that the load line is bisected. Therefore, in practical design
VCE is always set to VCC/2. This will confirm that the Q-point always swings within the active
region. This limitation can be explained by maximum signal handling capacity. For the
maximum input signal, output is produced without any distortion and clipping.
