BPW21R
Vishay Semiconductors
Silicon PN Photodiode
Description
BPW21R is a planar Silicon PN photodiode in a
hermetically sealed short TO–5 case, especially de-
signed for high precision linear applications.
Due to its extremely high dark resistance, the short
circuit photocurrent is linear over seven decades of il-
lumination level.
On the other hand, there is a strictly logarithmic
correlation between open circuit voltage and illumina-
tion over the same range.
The device is equipped with a flat glass window with
built in color correction filter, giving an approximation
94 8394
to the spectral response of the human eye.
Features
D Hermetically sealed TO–5 case
D Flat glass window with built–in color correction fil-
ter for visible radiation
D Cathode connected to case
D Wide viewing angle ϕ = ± 50 °
D Large radiant sensitive area (A=7.5 mm2)
D Suitable for visible radiation
D High sensitivity
D Low dark current
D High shunt resistance
D Excellent linearity
D For photodiode and photovoltaic cell operation
Applications
Sensor in exposure and color measuring purposes
Document Number 81519 www.vishay.com
Rev. 2, 20-May-99 1 (5)
BPW21R
Vishay Semiconductors
Absolute Maximum Ratings
Tamb = 25_C
Parameter Test Conditions Symbol Value Unit
Reverse Voltage VR 10 V
Power Dissipation Tamb x 50 °C PV 300 mW
Junction Temperature Tj 125 °C
Operating Temperature Range Tamb –55...+125 °C
Storage Temperature Range Tstg –55...+125 °C
Soldering Temperature t x5s Tsd 260 °C
Thermal Resistance Junction/Ambient RthJA 250 K/W
Basic Characteristics
Tamb = 25_C
Parameter Test Conditions Symbol Min Typ Max Unit
Forward Voltage IF = 50 mA VF 1.0 1.3 V
Breakdown Voltage m
IR = 20 A, E = 0 V(BR) 10 V
Reverse Dark Current VR = 5 V, E = 0 Iro 2 30 nA
Diode Capacitance VR = 0 V, f = 1 MHz, E = 0 CD 1.2 nF
VR = 5 V, f = 1 MHz, E = 0 CD 400 pF
Dark Resistance VR = 10 mV RD 38 G W
Open Circuit Voltage EA = 1 klx Vo 280 450 mV
Temp. Coefficient of Vo EA = 1 klx TKVo –2 mV/K
Short Circuit Current EA = 1 klx Ik 4.5 9 m
A
Temp. Coefficient of Ik EA = 1 klx TKlk –0.05 %/K
Reverse Light Current EA = 1 klx, VR = 5 V Ira 4.5 9 m
A
Sensitivity VR = 5 V, EA = 10–2...105 lx S 9 nA/lx
Angle of Half Sensitivity ϕ ±50 deg
Wavelength of Peak Sensitivity lp 565 nm
Range of Spectral Bandwidth l0.5 420...675 nm
Rise Time VR = 0 V, RL = 1k W, tr 3.1 ms
l= 660 nm
Fall Time VR = 0 V, RL = 1k W, tf 3.0 ms
l= 660 nm
www.vishay.com Document Number 81519
2 (5) Rev. 2, 20-May-99
BPW21R
Vishay Semiconductors
Typical Characteristics (Tamb = 25_C unless otherwise specified)
104 1400
I ro – Reverse Dark Current ( nA )
1200
CD – Diode Capacitance ( pF )
103 E=0
1000
f=1MHz
800
102
600
VR=5V
400
101
200
100 0
20 40 60 80 100 120 0.1 1 10 100
94 8468 Tamb – Ambient Temperature ( °C ) 94 8473 VR – Reverse Voltage ( V )
Figure 1. Reverse Dark Current vs. Ambient Temperature Figure 4. Diode Capacitance vs. Reverse Voltage
1.3
S ( l ) rel – Relative Spectral Sensitivity
I ra rel – Relative Reverse Light Current
1.0
1.2
0.8
1.1
0.6
1.0
0.4
0.9 0.2 Vl Eye
0.8 0
0 20 40 60 80 100 120 350 450 550 650 750
94 8738 Tamb – Ambient Temperature ( °C ) 94 8477 l – Wavelength ( nm )
Figure 2. Relative Reverse Light Current vs. Figure 5. Relative Spectral Sensitivity vs. Wavelength
Ambient Temperature
0° 10 20
102 ° ° 30°
Ik – Short Circuit Current ( m A )
101
S rel – Relative Sensitivity
100 40°
1.0
10–1 0.9 50°
10–2 0.8 60°
70°
10–3 0.7
80°
10–4
10–2 10–1 100 101 102 103 104 0.6 0.4 0.2 0 0.2 0.4 0.6
94 8476 EA – Illuminance ( lx ) 94 8475
Figure 3. Short Circuit Current vs. Illuminance Figure 6. Relative Radiant Sensitivity vs.
Angular Displacement
Document Number 81519 www.vishay.com
Rev. 2, 20-May-99 3 (5)
BPW21R
Vishay Semiconductors
Dimensions in mm
96 12181
www.vishay.com Document Number 81519
4 (5) Rev. 2, 20-May-99
BPW21R
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Semiconductors products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
Document Number 81519 www.vishay.com
Rev. 2, 20-May-99 5 (5)
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