CNT EUV Pellicle Performance in Scanners
CNT EUV Pellicle Performance in Scanners
ABSTRACT
The advent of extreme ultraviolet (EUV) lithography to enable smaller circuit dimensions introduced a new application for
carbon nanotubes (CNTs): the EUV-transparent pellicle used during lithography to protect the photomask from fall-on
particles. Diversity of CNT structures and tunability of their configuration within the CNT film (density, bundle size,
composition etc.) allow to tailor the CNT EUV pellicle properties for optimal performance. Thin, free-standing CNT films are
characterized by very high EUV transmission, mechanical and thermal stability, and can be scaled up to a full pellicle size. A
remaining challenge is extending the CNT EUV pellicle lifetime in the scanner environment of EUV-induced plasma. In this
work, optical properties of different uncoated CNT pellicles and their performance under high EUV power exposure in the
hydrogen-based environment are reported. Transmission, spectroscopic and chemical mapping of the exposed CNT membranes
are performed to explore the material modifications under various exposure conditions. These investigations add to the
understanding of lifetime limiters of CNT EUV pellicles under the influence of EUV radiation and plasma. Uncoated CNT
pellicles withstand 600 W source power equivalent in the EUV scanner-like gas environment but exhibit structural changes
with prolonged exposure. Therefore, we anticipate the need for coating the CNT pellicle to protect the CNT material against
plasma damage for the current scanner conditions.
Keywords: EUV pellicle, carbon nanotubes, free-standing film, EUV lithography, scanner environment, lifetime,
mechanical stability, hydrogen plasma, coating
1. INTRODUCTION
Due to its remarkable thermal, electronic and mechanical properties, carbon nanotube (CNT) material offers a wide range of
unique application opportunities. We identified the potential of CNTs to contribute to high yield extreme ultraviolet (EUV)
lithography, enabling advanced chip manufacturing1,2. One of the obstacles in the development of EUV lithography in high
volume manufacturing is mask contamination3. A pellicle is placed at a few millimeters stand-off distance from the EUV mask
so to catch any fall-on particles and not image them onto the wafer by keeping them out of focus. The development of an EUV
pellicle to protect the mask is challenging since most of the materials absorb strongly at the 13.5 nm EUV exposure wavelength.
To be commercially viable, an EUV pellicle must be thin enough to allow more than 90% EUV light transmittance (EUVT),
while durable enough to withstand handling, pressure changes and thermal stresses. A pellicle made of free-standing CNT
films is able to stop particles despite the presence of gaps, while demonstrating superior EUVT, mechanical stability, suitable
EUV uniformity, low EUV scattering and reflectivity, and sufficient light transmission to allow through-pellicle mask
inspection 1,2,4,5. Figure 1 shows a full-size CNT pellicle (~110 mm x 140 mm) similar to one that was successfully exposed
*
contact: marina.timmermans@imec.be
Figure 1: (a) Schematic representation of an EUV mask with pellicle. Image courtesy of KLA Corp. (b) Photo of a full-size CNT EUV
pellicle. (c) SEM image of a random CNT network comprising the pellicle membrane.
Figure 2: SEM images of CNT pellicle membrane structure made of (a) single-walled CNTs, (b) double-walled CNTs and (c) multi-walled
CNTs. Inset: TEM images of the corresponding CNT types.
Figure 3: EUV tranmittance (single pass) and EUV transmittance (EUVT) non-uniformity of CNT pellicles made of SWCNTs, DWCNTs
and MWCNTs with the corresponding SEM images of the CNT network. EUV non-uniformity is calculated based on the scanner relevant
area of 330 µm2.
The EUVT of a CNT pellicle can be tuned by varying the density or the amount of CNTs within the membrane. Depending on
the fabrication approach, the CNT areal density can be adjusted by either varying the CNT collection time during the floating
catalyst CVD synthesis or by modifying the amount of CNT material collected during vacuum filtration from the solution.
Spectrometry in the visible spectrum range is a commonly used and non-destructive method to characterize free-standing CNT
films. Absorbance of free-standing CNT films at 550 nm can be experimentally correlated to the CNT film thickness without
Figure 4: (a) Correlation between the transmittance at 13.5 nm and at 550 nm for different CNT types. (b) SEM images demonstrating an
example of CNT density variation for a DWCNT pellicle.
Figure 6: TEM images demonstrating (a) SWCNT bundle in cross-section consisting of 10-12 individual CNTs, and (b) variation of average
SWCNT bundle size. Note that a SWCNT film is not purified therefore metal catalyst particles are present.
The bundling of CNTs is an important parameter, which can have a high impact on many membrane properties. An increase
in CNT bundling in the membrane results in an improvement in the mechanical strength of the pellicle as well as its chemical
durability in the etching environment. However, at the same time CNT bundling leads to an increase in the EUV light scattering
in the numerical aperture (NA) which creates flare, and increased gap size which influences the ability of the pellicle to stop
particles. Some of the CNT pellicle properties can be modeled with respect to the CNT bundling degree, as was described in
our earlier work7. Geometrical parameters like gap size can be modeled by considering the CNTs as straight lines. With a
given EUVT, the total CNT length within a specific area, e.g. 2 x 2 µm2, can be calculated based on the geometrical
considerations of how carbon atoms are stacked in the nanotube. This total length can be distributed in random orientation over
that area, providing a visual interpretation similar to SEM images (Fig. 7(a)). In case of bundling, the effective length will be
reduced by the (average) number of CNTs per bundle, which results is a different visual configuration and gap size distribution.
(b)
Figure 7: (a) Simulation of CNT membrane microstructure with CNT bundling, where CNTs are shown as straight lines in random
orientation. (b) Modelling based variation of the CNT pellicle properties, i.e. flair into the numerical aperture (NA), maximum gap size of
the CNT network and specular EUVT with respect to the amount of CNTs per bundle.
Figure 8: Measured emissivity (columns) vs calculated pellicle temperature at 600 W source power (dots) for SWCNT, DWCNT and
MWCNT pellicles.
Figure 9: (a) Raman spectra before and after exposing SWCNTs to hydrogen radicals (H*) at room temperature. Inset: ID/IG ratio variation
as a function of the exposure time. (b) TEM images of SWCNTs before and after exposure to H* at room temperature.
Here we focus on the analysis of SWCNTs but note that a similar effect was observed for MWCNTs. The as-grown SWCNT
material possesses good initial structural quality (ID/IG~0.02). When exposing CNTs to H* at room temperature, the G peak
intensity decreases and the D peak intensity increases, and the most pronounced change occurs after the 1st hour of exposure
(Fig. 9). The ID/IG ratio increase reflects the introduction of defects and etching of the CNTs. The damage and etching of the
CNTs can be recognized in the TEM images of the exposed samples (Fig. 9b) and is in agreement with literature 30.
The relevance of these results for understanding the CNT pellicle lifetime in the scanner environment depends on the chosen
experimental conditions. In the scanner, the CNT pellicle is exposed to an EUV-induced hydrogen-based plasma and at the
same time is heated due to the absorption of EUV radiation. In order to probe the synergistic effect of EUV radiation and
plasma on the CNT membrane, uncoated CNT pellicles were dynamically exposed to EUV light at 600 W EUV scanner source
power equivalent in the scanner representative gas environment. These exposures were performed at the beamline operated by
the Physikalisch-Technische Bundesanstalt (PTB) at the BESSY II synchrotron facility 31. To emulate the EUV source powers,
apertures were used to select a specific part of the beamlines’ spot and the distance from the focus was adjusted31.
Figure 10: (a) EUV transmittance maps for SWCNT pellicles with two different densities (d1<d2) before and after exposure to the EUV
scanner-like environment at 600 W equivalent source power for 15 min. EUV beam was scanned across the middle region of the sample (IN-
beam). (b) Corresponding EUV transmittance before and after the exposure of SWCNT with two different densities (d1<d2). IN-beam and
OUT-beam regions after exposure are analyzed separately. Inset: photo of the EUV beam scanning the CNT pellicle sample as shown with
the arrow.
Furthermore, various material analysis techniques were applied to study the CNT material changes with exposure.
Interestingly, Raman spectroscopic measurements of the free-standing CNT membranes after 15 min exposure reveal a
noticeable effect on the CNT material. The entire CNT membrane was raster-scanned, creating a full-map Raman spectrum
with data collected at every 200 µm step. The maps of the ID/IG ratio in Figure 11 for two SWCNT pellicles with different
EUVT show a clear signature of the CNT pellicle exposure pattern, which correlates strongly with the corresponding EUVT
mapping results of Figure 10. An increase in the ID/IG ratio (or defect density) is observed in the OUT-beam region for both
samples.
Figure 11: Raman mapping of ID/IG ratio for samples with (a) 97% EUVT (SWCNT_d1) and (b) 95.5% EUVT (SWCNT_d2), after their
exposure to the EUV scanner-like environment at 600 W equivalent source power for 15 min. EUVT maps of the corresponding samples are
shown in Figure 10.
Further Raman spectroscopy at different excitation energies was performed and the results were compared with the reference
(unexposed) sample (Fig. 12). In addition to the ID/IG ratio, the ratio of the G´-band to D-band intensities (IG´/ID) was used as
an indication of sample purity, increase of which points to the reduction of contaminants32. G´-band spectra arise from a two-
phonon, second-order Raman scattering process and is not sensitive to tube defects28,32. A decrease in ID/IG ratio, complemented
by the increase in IG´/ID, in the IN-beam sample region, where CNT pellicle is expected to heat up with the absorption of the
EUV radiation, as compared to the reference suggest sample purification, cleaning and possibly defect healing or defect
etching. SWCNT purification via removal of amorphous carbon and defect healing using laser exposures at different
wavelength and environments was described in the literature33,34,32. In these experiments the use of an optimum irradiance
power density before the onset of the CNT damage and the presence of an oxidizing environment were critical35,34,32. In the
OUT-beam region of the sample an increase in the ID/IG ratio and concurrent decrease in IG´/ID, reveal CNT damage and
contamination. To have a better view of the CNT membranes changes, Raman analysis was supplemented with the chemical
composition analysis of the exposed pellicles using Elastic Backscattering Spectroscopy (EBS); X-ray photoelectron
spectroscopy (XPS) and Time of Flight Secondary Ion Mass Spectrometry (ToF-SIMS).
(a)
(b)
Figure 12: (a) Examples of Raman spectura for SWCNT_d1 (97% EUVT) measured with different laser energies (i.e. 1.96 eV, 2.33 eV and
3.06 eV) after exposure to the EUV scanner-like environment at 600 W equivalent source power for 15 min, compared with a reference CNT
sample of the same density. (b) Corresponding ID/IG and IG´/ID ratio analysis. An error bar for the reference sample takes into account possible
variations between similar samples.
Figure 13: (a) Raman mapping of ID/IG ratio and corresponding initial carbon (C) amount in thin film units (TFU) measured by EBS for a
SWCNT pellicle exposed to the EUV scanner-like environment at 600 W equivalent source power for 15 min. The statistical error on C
measurements was 1.1%. (b) XPS spectra of IN-beam and OUT-beam regions of the SWCNT pellicle sample for the different energy regions,
i.e. C1s, Fe2p and O1s. The XPS spectra were normalised in order to achieve an easier comparison. Relative amounts can be retrieved from
Table 1.
XPS measurements were performed to investigate the surface chemistry of the SWCNT pellicle IN-beam vs OUT-beam after
exposure (Fig. 13(b)). XPS measurements were carried out in Angle Integrated mode using a Theta300 system from Thermo
Instruments. A monochromatized Al Kα X-ray source (1486.6 eV) and a spot size of 100 µm was used. The XPS survey
spectra reveals the presence of C, O and Fe, in line with the EBS analysis. A small amount of surface contaminants like F, N
and Si was also detected by XPS. Analysis of the C1s peak of the XPS spectrum distinguishes sp2-hybridized graphite-like
carbon of the CNT walls, sp3-hybridized diamond-like carbon associated with defect sites, and carbon atoms with C=O and C-
O groups (Table 1). To achieve a repeatable fitting procedure, the main C1s peak was set at 284.8 eV and fixed binding energy
differences relative to the main peak were set for the other components of the spectra (0.9 eV for sp3, 2.1 eV for C-O and 4.7
eV for C=O). It should be noted that the identification of the peak at ~285.7 eV as sp3 is not unique and some oxygen bounded
carbon could also contribute to the intensities at that energy. The intensity of the components attributed to C-O groups on the
C1s spectra were higher in the OUT-beam vs IN-beam regions. This was also accompanied by an increase of the measured
atomic percentage of O in the OUT-beam region (Table 1). Additionally, a lower intensity of unoxidized Fe contribution on
the Fe2p spectra (Fe-Fe at ~707 eV) OUT-beam compared to IN-beam was observed. This change in the chemical state of Fe
could be explained by damage of the carbon coating surrounding the catalyst nanoparticles OUT-beam, likely to be etched
sooner than the nanotube wall under the exposure to hydrogen-based plasma37. Once exposed to air, the nanoparticles OUT-
beam are further oxidized. The higher intensity of metallic Fe in the IN-beam region could be the result of iron oxide reduction
and carbon shell repair around the particles. No clear change in the amount of Fe IN-beam vs OUT-beam could be measured
by EBS, nor observed in SEM.
Moreover, a ToF-SIMS analysis was performed with a ToF-SIMS V system (ION-TOF GmbH, Münster, Germany) using a
30kV Bi1+ beam as a primary ion source. Another SWCNT pellicle sample exposed under the same conditions was analyzed.
ToF-SIMs results indicate a lower intensity of C, O and surface contaminants in the IN-beam compared to OUT-beam regions
of SWCNT samples (Fig. 14). SEM observations did not reveal significant changes IN-beam vs OUT-beam, although for
certain SWCNT pellicle types several broken CNT bundles OUT-beam were observed. CNT etching IN-beam does not seem
to occur for short exposure times.
Figure 14: Carbon (C) and oxygen (O) ion mapping obtained by ToF-SIMS for SWCNT pellicle with 96% EUVT after exposure to the EUV
scanner-like environment at 600 W equivalent source power for 15 min.
In summary, transmission, spectroscopic and chemical mapping of the SWCNT pellicle exposed for 15 min to 600 W
equivalent EUV scanner source power in the scanner-like gas environment demonstrate an initial CNT purification, likely
removal of non-nanotube impurities IN-beam causing a minor EUVT increase. Hydrogen etching is expected to start on carbon-
based contamination, which can include amorphous carbon, fullerene-like particles, carbon atoms on the defective SWCNTs
and pentagonal carbon at the end of the CNTs or around catalyst particles37. Under EUV radiation in the presence of H2 gas in
EUV lithography, carbon contamination is known to be removed via physical and chemical sputtering by ionized species22.
The onset of CNT damage is clearly observed OUT-beam together with an increase of carbon and oxygen content as compared
to the IN-beam, suggesting a possible cause of the measured slight EUVT decrease OUT-beam. This contamination OUT-
beam could be a result of in-situ re-deposition due to the formation of volatile hydrides and redeposit of the reaction products
on other surfaces24, or ex-situ with the exposure to air where oxygen and other species could be adsorbed at the newly-generated
defect sites. It is important to note that EUVT and other measurements of the SWCNT pellicles after EUV radiation were
performed after the sample was exposed to air, therefore in-situ measurements would be important to better understand the
effect of EUV+H2-based gas environment on the CNT pellicles.
Overall short 15 min exposure of the uncoated SWCNT pellicle to the representative pellicle environmental conditions at 600
W source power equivalent yielded only minor structural changes to the CNT pellicle membrane. The CNT pellicles remained
mechanically strong and were able to withstand multiple cases of pressure changes when loading the samples to various
material analysis tools as well as pellicle shipments.
Figure 15: (a) EUV transmittance maps for SWCNT pellicle before and after exposure to the EUV scanner-like environment at 600 W
equivalent source power for 30 min. EUV beam was scanned across the middle region of the sample (IN-beam). (b) Corresponding EUV
transmittance before and after the exposure. IN-beam and OUT-beam regions after the exposure were analyzed separately and compared to
a similar SWCNT pellicle sample exposed to the same conditions for 15 min.
Even though the starting EUVT of this SWCNT pellicle sample was slightly lower, i.e. 93.5%, a similar trend of EUVT increase
IN-beam and no significant change of EUVT OUT-beam was observed after 30 min exposure. It is clear that with the increased
exposure time, a larger EUVT drift IN-beam was observed, i.e. 1.4% EUVT increase (Fig. 15). Further, Raman and XPS
mapping of the exposed sample were performed. Figure 16(a) shows the ID/IG ratio map of the sample where a similar trend of
higher ID/IG ratio (or defect density) was observed in the OUT-beam region as compared to the IN-beam region. At the same
time, the IN-beam region showed an increase in ID/IG ratio and a decrease of the IG´/ID ratio (or purity index) as compared to
the reference sample. The results of the Raman quality and purity indicators together with an overall decrease in the Raman
signal intensity suggest that the uncoated SWCNT pellicle experienced significant damage and CNT removal under the
influence of EUV+scanner gases after 30 min. The radial breathing mode (RBM) of the Raman spectra, which corresponds to
the coherent vibrations of carbon atoms in the radial direction, enables an estimate of the CNT diameter, dt (ωRBM=234/dt)28,32.
A slight shift towards larger average diameter SWCNTs after the exposure was seen as compared to the reference sample
(Fig.16(d)). These findings indicate that larger diameter CNTs are more stable when exposed to plasma which is in line with
literature observations30,38. Higher hydrogenation reactivity of smaller diameter CNTs is explained by their higher curvature
and strain in the structure30.
Figure 17 presents the comparison of the C1s, O1s and Fe2p XPS spectra for IN-beam and OUT-beam regions of the sample
corresponding to the Raman mapping shown in Figure 16(a). Similar observations as for the shorter exposure time were made:
a larger relative C-O component on the C1s spectra and more oxygen detected OUT-beam (Table 2). It is interesting that almost
no metallic Fe remained present in the OUT-beam region of the SWCNT sample with prolonged plasma exposure indicating
that all carbon coatings enclosing metallic particles were damaged or removed resulting in air oxidation of the catalyst particles.
It is possible that in the IN-beam region some of the Fe particles were removed after etching of the surrounding carbon shell
which could also explain the higher intensity of metallic Fe as measured by XPS and contribute to an EUVT increase IN-beam.
However, due to the pellicle breakage EBS or SEM measurements could not be performed to check this hypothesis.
Table 2: Relative atomic concentrations (at%) as calculated using the fits on the C1s, O1s, Fe2p, N1s, F1s and Si2p XPS curves for SWCNT
pellicle exposed to the EUV scanner-like environment at 600 W equivalent source power for 30 min.
C sp2 C sp3 C-O C=O O Fe N F Si
IN-beam 55.5 12.3 13.0 6.8 8.6 1.9 0.4 0.3 1.2
OUT-beam 51.7 11.8 16.1 4.5 12.6 1.4 0.4 0.4 1.2
This SWCNT material was further examined in TEM. Figure 18 shows a comparison of the unexposed reference sample with
the exposed SWCNT material likely originating from the OUT-beam region of the sample. After prolonged exposure, uncoated
SWCNTs show deformation and amorphization, contamination, local collapse of the CNTs with the disappearance of the
central hollow. fragmentation and removal of the CNTs. Individual CNTs and smaller bundles are damaged and etched first.
Figure 18: TEM images comparing unexposed reference SWCNT sample with the one exposed to the EUV scanner-like environment at 600
W equivalent source power for 30 min.
Figure 19: (a) EUV transmittance maps for MWCNT pellicle before and after exposure to the EUV scanner-like environment at 600 W
equivalent source power for 30 min. EUV beam was scanned across the middle region of the sample (IN-beam). (b) Corresponding EUV
transmittance before and after the exposure. IN-beam and OUT-beam regions after exposure were analyzed separately and compared to a
SWCNT pellicle sample exposed to the same conditions for the same time (30 min).
Raman spectroscopy was performed to study the MWCNT pellicle material modifications after exposure. The starting ID/IG
ratio of MWCNTs was higher compared to SWCNTs, i.e. 0.7 for MWCNTs vs 0.02-0.05 for SWCNTs, suggesting more
disorder in the MWCNT structure. The MWCNT quality is significantly decreased (ID/IG increases) after 30 min exposure in
both IN-beam and OUT-beam regions (Fig. 20(a)). XPS measurements also show a noticeable increase in the O level and C-
O bonds in the OUT-beam region compared to the IN-beam region (see Fig. 20(b) and Table 3). The MWCNT sample was
purified to remove catalyst particles and consequently did not contain a measurable amount of Fe.
Table 3: Relative atomic concentrations (at%) as calculated using the fits on the C1s, O1s, Fe2p, N1s, F1s and Si2p XPS curves for
MWCNT pellicle exposed at 600W EUV power equivalent for 30 min in the scanner-like gas environment.
C sp2 C sp3 C-O C=O O Fe N F Si
IN-beam 56.6 14.7 12.1 8.3 7.1 0.1 0.4 0.2 0.5
OUT-beam 51.4 12.5 16.9 6.0 11.8 0.0 0.7 0.2 0.5
TEM analysis of the as-exposed MWCNT pellicle sample as compared to the unexposed reference shows significant damage
to the MWCNT structure including wall deformations and formation of small ripples. However, the MWCNT cylindrical
structure is preserved and few removed or broken MWCNTs are observed (see Fig. 21). This indicates that MWCNTs possess
a comparatively higher structural stability and radiation tolerance than SWCNTs. Similar effects were reported in the literature
for electron beam-induced surface modifications of SWCNT and MWCNTs, where a higher stability of MWCNTs towards
irradiation was associated with the presence of the inner tubes that prevent the outer tubes from collapsing 39,40,41.
In summary, despite a significant structural damage of the uncoated MWCNT pellicle sample revealed by Raman and TEM
after 30 min exposure at 600 W equivalent source power in the EUV scanner-like gas environment, a lower EUVT drift was
measured as compared to a SWCNT pellicle under the same exposure conditions explained by less CNT material removal as
observed in TEM.
5 CONCLUSIONS
CNTs are promising building blocks for a highly configurable EUV pellicle. Different CNT types were tested for the pellicle
application, i.e. SWCNTs, DWCNTs and MWCNTs. All CNT types allow to achieve high EUVT with acceptable uniformity.
CNT material type, density, bundle size, and composition (purity) are parameters examined to tailor the CNT EUV pellicle
properties for optimal performance.
Uncoated CNT pellicles survive 600 W equivalent source power (~12 W/cm2 EUV power density) exposure in the EUV
scanner-like gas environment. However, material analysis after exposure reveals CNT structural modifications leading to the
degradation of the mechanical strength of the pellicle with prolonged exposures. The degree of these changes is modulated by
various CNT material parameters including initial structural quality, density, diameter, bundling, purity, and surface
contamination. MWCNT pellicles have lower EUVT drift and maintain their cylindrical structure better than SWCNT pellicles
under the same exposure conditions. However, improvements are still needed in terms of the mechanical strength and structural
quality of current MWCNT pellicles.
The CNT pellicle performance in a scanner depends not only the CNT type and material parameters, but largely on the exposure
conditions and gas environment. The influence of EUV radiation and hydrogen-based gas environment on the uncoated CNT
pellicle observed in this study are a combination of chemical effects governed by the reactive species produced in the plasma,
and photothermal processes involving the CNT pellicle heating with the absorption of the EUV radiation. More in-depth
investigation of the mechanisms involved in CNT material modification is necessary.
In addition to CNT membrane optimization, coating of the CNT pellicle is a potential route towards CNT pellicle lifetime
extension in the scanner environment. The protection of CNT material from structural degradation by means of coating was
shown. Further optimization of both the CNT pellicle material and the coatings are in progress to fulfill the EUV pellicle
requirements for high volume manufacturing with EUV lithography.
We would like to thank CNT suppliers: Lintec NSTC, Canatu Oy, and Institute of Metal Research (IMR). We appreciate the
cooperation and assistance of the ASML pellicle research team. The authors acknowledge Frank Scholze and Christian Laubis
from PTB for useful discussions and Wim Arnold Bik from Detect99 for EBS measurements.
REFERENCES
[1] Timmermans, M. Y., Mariano, M., Pollentier, I., Richard, O., Huyghebaert, C. and Gallagher, E. E., “Free-standing carbon
nanotube films for extreme ultraviolet pellicle application,” J. Micro/Nanolithography, MEMS, MOEMS 17(04), 1 (2018)
[2] Gallagher, E. E., Timmermans, M. Y., Pollentier, I., Lee, J. U., Mariano, M., Adelmann, C., Huyghebaert, C., Scholze, F. and
Laubis, C., “CNTs in the context of EUV pellicle history,” Proc. SPIE 10583, Extrem. Ultrav. Lithogr. IX 105831E (2018)
[3] Levinson, H. J. and Brunner, T. a., “Current challenges and opportunities for EUV lithography,” 2 (2018).
[4] Pollentier, I., Timmermans, M. Y., Huyghebaert, C., Brems, S., Gallagher, E., Brose, S. and Luttgenau, B., “EUV scattering from
CNT pellicles: measurement and control,” Submitt. J. Micro/Nanopatterning, Mater. Metrol. 20(4) (2021)
[5] Keshet, M., Gershon, D., Malul, U., Blinder, Y., Orr, Y., Tam, A., Santoro, G., Houchens, K., Gallagher, E., Timmermans, M.,
Lorusso, G. and Frommhold, A., “Enabling non-actinic EUV mask inspection using carbon nanotube pellicle,” Proc. SPIE 11609,
Extrem. Ultrav. Lithogr. XII 1160910 (2021)
[6] Bekaert, J., Gallagher, E., Jonckheere, R., Van Look, L., Aubert, R., Nair, V. V., Timmermans, M.Y. Pollentier, I., Hendrickx, E.,
Klein, A., Yeğen, G. and Broman, P., “CNT pellicle: imaging results of the first full-field EUV exposures,” Submitt. J.
Micro/Nanopatterning, Mater. Metrol. 20(4) (2021)
[7] Pollentier, I., Timmermans, M. Y., Huyghebaert, C., Brems, S. and Gallagher, E. E., “The EUV CNT pellicle: balancing material
properties to optimize performance,” Proc. SPIE 11323, Extrem. Ultrav. Lithogr. XI 113231G (2020)
[8] Timmermans, M., Pollentier, I., Korytov, M., Nuytten, T., Sergeant, S., Conard, T., Meersschaut, J., Zhang, Y., Dialameh, M.,
Alaerts, W., Jazaeri, E., Spampinato, V., Franquet, A., Brems, S., Huyghebaert, C. and Gallagher, E., “Carbon nanotube EUV
pellicle tunability and lifetime,” Proc. SPIE 11609, Extrem. Ultrav. Lithogr. XII 116090Y (2021)
[9] Nasibulin, A. G., Kaskela, A., Mustonen, K., Anisimov, A. S., Ruiz, V., Kivistö, S., Rackauskas, S., Timmermans, M. Y., Pudas,
M., Aitchison, B., Kauppinen, M., Brown, D. P., Okhotnikov, O. G. and Kauppinen, E. I., “Multifunctional free-standing single-
walled carbon nanotube films,” ACS Nano 5(4), 3214–3221 (2011)
[10] Lima, M. D., Ueda, T., Huynh, C., Harada, T. and Kondo, T., “Ultra-low density, nanostructured free-standing films for EUV
Pellicles,” Proc. SPIE 11517, Extrem. Ultrav. Lithogr. 1151709 (2020).
[11] Ermolaev, G. A., Tsapenko, A. P., Volkov, V. S., Anisimov, A. S., Gladush, Y. G. and Nasibulin, A. G., “Express determination
of thickness and dielectric function of single-walled carbon nanotube films,” Appl. Phys. Lett. 116(231103) (2020)
[12] Meersschaut, J. and Vandervorst, W., “High-throughput ion beam analysis at imec,” Nucl. Instruments Methods Phys. Res. Sect.
B Beam Interact. with Mater. Atoms 406 Part A, 25–29 (2017)
[13] Laricchiuta, G., Vandervorst, W., Zyulkov, I., Armini, S. and Meersschaut, J., “High sensitivity Rutherford backscattering
spectrometry using multidetector digital pulse processing,” J. Vac. Sci. Technol. A Vacuum, Surfaces, Film. 36(02D407) (2018)
[14] The Center for X-Ray Optics at Lawrence Berkeley National Laboratory: http://henke.lbl.gov/optical_constants/.
[15] Lee, S.-C., “Dependent scattering of an obliquely incident plane wave by a collection of parallel cylinders,” J. App. Phys. 68(10)
(1990)
[16] Schaefer., http://www.mathworks.com/matlabcentral/fileexchange/36831-matscat (2012).
[17] Kaskela, A., Laiho, P., Fukaya, N., Mustonen, K., Susi, T., Jiang, H., Houbenov, N., Ohno, Y. and Kauppinen, E. I., “Highly
individual SWCNTs for high performance thin film electronics,” Carbon N. Y. 103, 228–234 (2016)
[18] Goldfarb, D. L., Bloomfield, M. O. and Colburn, M., “Thermomechanical behavior of EUV pellicle under dynamic exposure
conditions,” Proc. SPIE 9776, Extrem. Ultrav. Lithogr. VII 977621 (2016)
[19] Pollentier, I., Lee, J. U., Timmermans, M., Adelmann, C., Zahedmanesh, H., Huyghebaert, C. and Gallagher, E. E., “Novel
membrane solutions for the EUV pellicle: better or not?,” Extrem. Ultrav. Lithogr. VIII 10143, 101430L (2017)
[20] Van Zwol, P. J., Vles, D. F., Voorthuijzen, W. P., Péter, M., Vermeulen, H., van der Zande, W. J., Sturm, J. M., van de Kruijs, R.
W. E. and Bijkerk, F., “Emissivity of freestanding membranes with thin metal coatings,” J. Appl. Phys. 118(213107) (2015)
[21] Van Zwol, P. J., Nasalevich, M., Kurganova, E., Voorthuijzen, P., Vles, D., Péter, M., Symens, W., van der Zande, W.,
Notenboom, A., Klootwijk, J., van de Kruijs, R. W. and Giesbers, a. J. M. (Jos)., “Pellicle films supporting the ramp to HVM with
EUV,” Proc. SPIE 10451, Photomask Technol. 2017 104510O (2017).