Not for New Designs

EGP10A, EGP10B, EGP10C, EGP10D, EGP10F, EGP10G

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Vishay General Semiconductor
Glass Passivated Ultrafast Plastic Rectifier
FEATURES
• Superectifier structure for high reliability condition
• Cavity-free glass-passivated junction
SUPERECTIFIER®
• Ultrafast reverse recovery time
• Low forward voltage drop
• Low leakage current
• Low switching losses, high efficiency
• High forward surge capability
DO-41 (DO-204AL)
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS
For use in high frequency rectification and freewheeling
PRIMARY CHARACTERISTICS application in switching mode converters and inverters for
consumer, computer and telecommunication.
IF(AV) 1.0 A
VRRM 50 V, 100 V, 150 V, 200 V, 300 V, 400 V
IFSM 30 A MECHANICAL DATA
trr 50 ns Case: DO-41 (DO-204AL), molded epoxy over glass body
VF 0.95 V, 1.25 V
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
TJ max. 150 °C
Package DO-41 (DO-204AL)
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
Circuit configuration Single
E3 suffix meets JESD 201 class 1A whisker test
Polarity: color band denotes cathode end

MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)

PARAMETER SYMBOL EGP10A EGP10B EGP10C EGP10D EGP10F EGP10G UNIT
Maximum repetitive peak reverse voltage VRRM 50 100 150 200 300 400 V
Maximum RMS voltage VRMS 35 70 105 140 210 280 V
Maximum DC blocking voltage VDC 50 100 150 200 300 400 V
Maximum average forward rectified current
IF(AV) 1.0 A
0.375" (9.5 mm) lead length at TA = 55 °C
Peak forward surge current 8.3 ms single half
IFSM 30 A
sine-wave superimposed on rated load
Operating junction and storage temperature range TJ, TSTG -65 to +150 °C

Revision: 06-Oct-2021 1 Document Number: 88582

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 Not for New Designs
EGP10A, EGP10B, EGP10C, EGP10D, EGP10F, EGP10G
www.vishay.com
Vishay General Semiconductor

ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER TEST CONDITIONS SYMBOL EGP10A EGP10B EGP10C EGP10D EGP10F EGP10G UNIT
Maximum instantaneous
1.0 A VF 0.95 1.25 V
forward voltage
Maximum DC reverse TA = 25 °C 5.0
current at rated DC IR μA
blocking voltage TA = 125 °C 100
Maximum reverse IF = 0.5 A, IR = 1.0 A,
trr 50 ns
recovery time Irr = 0.25 A
Typical junction
4.0 V, 1 MHz CJ 22 15 pF
capacitance

THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER SYMBOL EGP10A EGP10B EGP10C EGP10D EGP10F EGP10G UNIT
Typical thermal resistance RθJA (1) 50 °C/W
Note
(1) Thermal resistance from junction to ambient, and from junction to lead at 0.375" (9.5 mm) lead length, PCB mounted

ORDERING INFORMATION (Example)

PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
EGP10D-E3/54 0.337 54 5500 13" diameter paper tape and reel
EGP10D-E3/73 0.337 73 3000 Ammo pack packaging

RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)

1.0 30
Average Forward Rectified Current (A)

TJ = TJ Max.
8.3 ms Single Half Sine-Wave
Peak Forward Surge Current (A)

25

20

0.5 15

10

Resistive or Inductive Load

5
0.375" (9.5 mm) Lead Length

0 0
0 25 50 75 100 125 150 175 1 10 100
Lead Temperature (°C) Number of Cycles at 60 Hz

Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current

Revision: 06-Oct-2021 2 Document Number: 88582

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 Not for New Designs
EGP10A, EGP10B, EGP10C, EGP10D, EGP10F, EGP10G
www.vishay.com
Vishay General Semiconductor

100 70
Pulse Width = 300 μs TJ = 25 °C
Instantaneous Forward Current (A)

1 % Duty Cycle 60 f = 1.0 MHz

Vsig = 50 mVp-p

Junction Capacitance (pF)

10 TJ = 150 °C
50

40
1 TJ = 25 °C
30

20
0.1

10
EGP10A thru EGP10D EGP10A thru EGP10D
EGP10F and EGP10G EGP10F and EGP10G
0.01 0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0.1 1 10 100
Instantaneous Forward Voltage (V) Reverse Voltage (V)

Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 5 - Typical Junction Capacitance

1000 Transient Thermal Impedance (°C/W) 100

Instantaneous Reverse Leakage

100
TJ = 150 °C
10
Current (μA)

10

TJ = 100 °C
1
1

0.1
TJ = 25 °C

0.01 0.1
0 20 40 60 80 100 0.01 0.1 1 10 100
Percent of Rated Peak Reverse Voltage (%) t - Pulse Duration (s)

Fig. 4 - Typical Reverse Leakage Characteristics Fig. 6 - Typical Transient Thermal Impedance

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

DO-41 (DO-204AL)

1.0 (25.4)
MIN.

0.107 (2.7)
0.080 (2.0)
DIA.

0.205 (5.2)
0.160 (4.1)

1.0 (25.4)
MIN.
0.034 (0.86)
0.028 (0.71)
DIA.

Revision: 06-Oct-2021 3 Document Number: 88582

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 Legal Disclaimer Notice
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Revision: 01-Jul-2024 1 Document Number: 91000

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000