22 APLJean Lois
22 APLJean Lois
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    AFFILIATIONS
              de Lorraine, CNRS, IJL, F-54000 Nancy, France
    Universite
    a)
         Author to whom correspondence should be addressed: michel.hehn@univ-lorraine.fr
    ABSTRACT
    A 5 nm thick ferrimagnetic film made of amorphous rare-earth transition-metal alloys Gdx(Fe90Co10)1-x was grown by physical vapor deposi-
    tion. Its magnetic properties (coercivity, perpendicular magnetic anisotropy, and compensation composition at room temperature) were
    investigated for various buffer and capping layers in contact with a ferrimagnetic thin film. While Gdx(Fe90Co10)1-x appears to be amorphous
    for all the samples, it appears that (111) textured Cu is the best material to promote perpendicular magnetization. The large compensation
    composition change as a function of the magnetic film interface at room temperature is analyzed in terms of polarizability of the surrounding
          Amorphous rare-earth transition-metal (RE-TM) alloys are a              RF Ar plasma at a pressure of 102 mbar for 5 min. During deposition,
    very interesting class of materials since their magnetic properties can       the sample holder is rotated at several tens of revolutions per minute to
    be finely tuned by their chemical composition and temperature.1,2              ensure uniform layer thickness. The 5 nm thick Gdx(Fe90Co10)1x layer
    They show large magneto-optical and spintronic effects and are useful         was co-sputtered from highly pure Gd, Fe, and Co targets. The compo-
    to realize devices to propagate magnetic textures or build THz oscilla-       sition was controlled by adjusting the power of each target and was cal-
    tors.3 One material of particular interest is the GdFeCo ferrimagnetic        ibrated before deposition. The atomic composition was varied
    alloy. In this material, the magnetic moment of the rare-earth sublat-        systematically in a range of 22% < x < 33%. In all multilayers, a buffer
    tice (Gd) is antiferromagnetically exchange coupled to one of the             of tantalum (Ta) is sputtered before the magnetic layer promotes layer
    transition-metals (FeCo).5 The resulting net magnetization and coer-          adhesion, block diffusion of Si and O2 from the substrate, and erase
    civity can easily be tuned by changing the temperature or the RE con-         any texture that could come from the substrate. Also, a platinum (Pt)
    centration.6 Magnetization compensation, i.e., zero net magnetization,        film is added over as a capping layer to prevent against oxidation. Y
    can be achieved for specific composition or temperature.                       and Z have been varied by choosing Cu (copper), Pt, Ta, or Ir (irid-
          Recently, this material has attracted much interest thanks to its       ium). For each sample, we measured the magnetic hysteresis loop at
    light and current induced switching properties.4,7,8 While the bulk           room temperature with a Kerr laser setup in the polar geometry. The
    properties have been largely reported in the literature,6 its recent use as   effective magnetic anisotropy will result from the competition between
    ultrathin films led to a variability of properties: variability of composi-    the magnetic anisotropies and the shape anisotropy related to the
    tion for room temperature compensation or in-plane/out-of-plane               demagnetization field of the thin film. From the shape of the loop, the
    magnetization stabilization for a given chemical composition. In this         direction of the effective magnetic anisotropy is extracted: out of
    paper, we study those properties, keeping the thickness of GdFeCo             the plane (OOP) if the loop is square with hysteresis and in the plane
    fixed to 5 nm and changing both the concentration of Gd and the                (IP) if the loop is linear. From the loops, we also determine the coercive
    materials in contact with GdFeCo. We show that the variability of             fields as well as the saturation fields. The former is expected to diverge
    properties can be related to the buffer and capping layers used in the        at the magnetization compensation. Since our Kerr setup mainly
    multilayer while GdFeCo keeps its amorphous state.                            probes the TM sub-lattice, it is also straightforward to deduce which
          SiO2//Ta(5 nm)/Y(ynm)/Gdx(Fe90Co10)1x(5 nm)/Z(znm)/Pt(5 nm)            sub-lattice dominates the magnetization of the sample as a function
    heterostructures were grown by magnetron sputtering. Before the mul-          of x. Finally, due to the low saturation magnetization and reduced
    tilayer is deposited, the surface of the substrate surface is etched by a     thickness of the Gdx(Fe90Co10)1-x alloy thin film, the magnetic moment
Appl. Phys. Lett. 121, 212402 (2022); doi: 10.1063/5.0125011                                                                                    121, 212402-1
Published under an exclusive license by AIP Publishing
   Applied Physics Letters                                                                           ARTICLE             scitation.org/journal/apl
    and so the magnetic anisotropies could not be quantified, and the mag-       those magnetic response is the low anisotropy of the magnetic layer
    netic signal of the substrate is too large.                                 and the presence of DMI (Dzyaloshinskii–Moriya Interaction) at the
          Figure 1(a) reports the evolution of the coercive field of SiO2//      Gdx(Fe90Co10)1-x/Pt interface. Inserting Ta at this interface changes
    Ta(5 nm)/Y(5 nm)/Gdx(Fe90Co10)1-x(5 nm)/Z(5 nm)/Pt(5 nm) multi-             drastically the magnetic response. First, square hysteresis loops with the
    layers with various Y and Z interfaces. Only samples that exhibit effec-    field applied along the direction perpendicular to the film could be
    tive perpendicular magnetic anisotropy (PMA) are reported, and              observed for two compositions on both sides of the compensation.
    samples with in-plane magnetization in the range 22% < x < 33% are          Second, the composition for compensation moved from 29.2% to 24%
    not shown in the graph. The vertical lines represent the change             (Fig. 1).
    between CoFe-rich samples and Gd-rich composition, respectively, on               Adding Cu at the Gdx(Fe90Co10)1-x interfaces has a major impact
    the left and right sides of the lines, for each couple of interfaces. The   on the magnetic properties. Comparing to two Ta interfaces, inserting
    analysis of the Kerr hysteresis loops provides the compositional ranges     Cu either at the lower interface [Fig. 1(a), orange circle], at the upper
    in which the alloy is TM or RE dominant. A visual representation of         interface [Fig. 1(a), blue circle], or at both interfaces [Fig. 1(a), red cir-
    TM or RE dominance is reported in Fig. 1(b). An obvious and clear           cle] improves the PMA. In the latter case, PMA is maintained for a
    correlation with the coercive field is observed.                             very wide range of composition from x ¼ 20.2% to x ¼ 30.4%.
          Starting with SiO2//Ta(5 nm)/Gdx(Fe90Co10)1-x(5 nm)/Pt(5 nm),         Removing one interface leads to a reduction in the window of x for
    no PMA could be demonstrated for x < 24.4% or x > 29.2% since only          which PMA exists. As a result, Cu appears to be the best candidate to
    hysteresis loops’ characteristics of in plane effective magnetic anisot-    promote PMA. By adding one or two Cu interfaces, we can clearly
    ropy could be observed (Fig. 2). For 24.4% < x < 29.2%, a curvy loops       observe that the concentration for magnetic compensation shifts to a
    characteristic of multi-domains’ states with PMA is observed. At            higher concentration of Gd.
    x ¼ 29.2%, the sign of the loop changes indicates that the composition            For all other samples studied in this paper, a Cu interface is
    of magnetic compensation has been passed. A possible explanation of         retained to promote PMA. The other interface was modified to check
Appl. Phys. Lett. 121, 212402 (2022); doi: 10.1063/5.0125011                                                                                        121, 212402-2
Published under an exclusive license by AIP Publishing
   Applied Physics Letters                                                                                  ARTICLE             scitation.org/journal/apl
Appl. Phys. Lett. 121, 212402 (2022); doi: 10.1063/5.0125011                                                                                             121, 212402-3
Published under an exclusive license by AIP Publishing
   Applied Physics Letters                                                                                ARTICLE             scitation.org/journal/apl
                                                                                     AUTHOR DECLARATIONS
                                                                                     Conflict of Interest
     FIG. 4. Kerr hysteresis loops for Ta(5 nm)/Cu(y nm)/Gd23.4FeCo(5 nm)/Pt(5 nm)
     with 1 nm <¼ y <¼ 5 nm.                                                              The authors have no conflicts to disclose.
Appl. Phys. Lett. 121, 212402 (2022); doi: 10.1063/5.0125011                                                                                          121, 212402-4
Published under an exclusive license by AIP Publishing
   Applied Physics Letters                                                                                       ARTICLE              scitation.org/journal/apl
                                                                                            8
    Author Contributions                                                                       D. Cespedes-Berrocal, H. Damas, S. Petit-Watelot, D. Maccariello, P. Tang, A.
                                                                                               Arriola-Cordova, P. Vallobra, Y. Xu, J. L. Bello, E. Martin, S. Migot, J.
    Jean-Lo€ıs Bello: Formal analysis (equal); Investigation (equal);                          Ghanbaja, S. Zhang, M. Hehn, S. Mangin, C. Panagopoulos, V. Cros, A. Fert,
    Methodology (equal); Validation (equal). Daniel Lacour: Formal anal-                       and J. C. Rojas-Sanchez, Adv. Mater. 33, 2007047 (2021).
                                                                                             9
    ysis (equal); Investigation (equal); Writing – review & editing (equal).                   A. I. Larkin and V. I. Melnikov, Sov. Phys. JETP. 34, 656 (1972).
                                                                                           10
    Sylvie Migot: Formal analysis (equal); Investigation (equal). Jaafar                      S. S. Parkin, Phys. Rev. Lett. 67, 3598 (1991).
                                                                                           11
    Ghanbaja: Formal analysis (equal); Investigation (equal). Stephane                      K. Le Dang, P. Veillet, C. Chappert, R. Farrow, R. Marks, D. Weller, and A.
                                                                                             Cebollada, Phys. Rev. B. 50, 200 (1994).
    Mangin: Funding acquisition (equal); Project administration (equal);                   12
                                                                                              A. Simopoulos, E. Devlin, A. Kostikas, A. Jankowski, M. Croft, and T.
    Supervision (equal). Michel Hehn: Conceptualization (equal); Formal                       Tsakalakos, Phys. Rev. B. 54, 9931 (1996).
                                                                                           13
    analysis (equal); Investigation (equal); Methodology (equal);                             J. Knepper and F. Yang, Phys. Rev. B. 71, 224403 (2005).
                                                                                           14
    Supervision (equal); Validation (equal); Writing – original draft (equal).                F. Meier, S. Lounis, J. Wiebe, L. Zhou, S. Heers, P. Mavropoulos, P. H.
                                                                                              Dederichs, S. Bl€ugel, and R. Wiesendanger, Phys. Rev. B. 83, 075407 (2011).
                                                                                           15
                                                                                              R. Wu, L. Chen, and N. Kioussis, J. Appl. Phys. 79, 4783 (1996).
                                                                                           16
    DATA AVAILABILITY                                                                         T. McGuire, J. Aboaf, and E. Klokholm, J. Appl. Phys. 55, 1951 (1984).
                                                                                           17
                                                                                              A. Mukhopadhyay, S. K. Vayalil, D. Graulich, I. Ahamed, S. Francoual, A.
        The data that support the findings of this study are available                         Kashyap, T. Kuschel, and P. A. Kumar, Phys. Rev. B. 102, 144435 (2020).
                                                                                           18
    from the corresponding author upon reasonable request.                                    M. Perini, S. Meyer, B. Dupe, S. V. Malottki, A. Kubetzka, K. V. Bergmann, R.
                                                                                              Wiesendanger, and S. Heinze, Phys. Rev. B. 97, 184425 (2018).
                                                                                           19
                                                                                              F. Wilhelm, P. Poulopoulos, H. Wende, A. Scherz, K. Baberschke, M.
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Appl. Phys. Lett. 121, 212402 (2022); doi: 10.1063/5.0125011                                                                                                    121, 212402-5
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