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0% found this document useful (0 votes)
19 views15 pages

Datasheet

Uploaded by

Prabesh Kharel
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
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A3985

Digitally Programmable
Dual Full-Bridge MOSFET Driver

Features and Benefits Description


▪ Serial interface for full digital control The A3985 is a flexible dual full-bridge gate driver suitable
▪ Dual full-bridge gate drive for N-channel MOSFETs for driving a wide range of higher power industrial bipolar 2-
▪ Dual 6-bit DAC current reference phase stepper motors or 2-phase brushless dc motors. It can
▪ Operation over 12 to 50 V supply voltage range also be used to drive two individual torque motors or solenoid
▪ Synchronous rectification actuators. Motor power is provided by external N-channel power
▪ Cross-conduction protection MOSFETs at supply voltages from 12 to 50 V.
▪ Adjustable mixed decay
Full digital control is provided by two serially-accessible
▪ Fixed off-time PWM current control
registers that allow programming of off-time, blank-time,
▪ Low-current idle mode
dead-time, mixed decay ratios, synchronous rectification,
master clock source selection, and division ratio and idle
mode. All internal timings are derived from a master clock
that can be generated on-chip or provided by an external
clock such as the system clock of the master controller. A
programmable divider allows for a wide range of external
Package: 38 pin TSSOP (suffix LD) system clock frequencies.
The internal fixed off-time PWM current-control timing is
programmed via the serial interface to operate in slow, fast,
and mixed current-decay modes. The desired load-current level
and direction is set via the serial port with a direction bit and
two 6-bit linear DACs in conjunction with a reference voltage.
The seven bits of control allow maximum flexibility in torque

Continued on the next page…


Approximate size

Typical Application

3985-DS
Digitally Programmable
A3985
Dual Full-Bridge MOSFET Driver
Description (continued) are protected from shoot-through by integrated crossover-control
control for a variety of step methods, from microstepping to full-step and programmable dead time.
drive. Load current in the external power MOSFET full-bridges is
In addition to crossover current control, internal circuit protection
set in 1.56% increments of the maximum value.
provides thermal shutdown with hysteresis and undervoltage lockout.
The above-supply voltage required for the high-side N-channel Special power-up sequencing is not required. This component is
MOSFETs is provided by a bootstrap capacitor. Efficiency is supplied in a 38-pin TSSOP (package LD) with 100% matte tin
enhanced by using synchronous rectification and the power FETs leadframe plating.

Selection Guide
Part Number Packing*
A3985SLD-T Tube, 50 pieces per tube
A3985SLDTR-T Tape and reel, 4000 pieces per reel
*Contact Allegro for additional packing options

Absolute Maximum Ratings


Characteristic Symbol Notes Rating Units
Supply Voltage VBB –0.3 to 50 V
Logic Supply Voltage VDD –0.3 to 7 V
Logic Inputs and Outputs –0.3 to 7 V
SENSEx pins –1 to 1 V
Sxx pins –2 to 55 V
LSSx pins –2 to 5 V
GHxx pins Sxx to Sxx+15 V
GLxx pins –2 to 16 V V
Cxx pins –0.3 to Sxx+15 V
Operating Ambient Temperature TA Range S –20 to 85 ºC
Junction Temperature TJ(max) 150 ºC
Storage Temperature Tstg –55 to 150 ºC

Allegro MicroSystems, Inc. 2


115 Northeast Cutoff, Box 15036
Worcester, Massachusetts 01615-0036 (508) 853-5000
www.allegromicro.com
Digitally Programmable
A3985
Dual Full-Bridge MOSFET Driver

Functional Block Diagram

+5 V VMOTOR

VDD VBB

VREG
Bandgap Regulator
CREG P

Phase 1A Bridge1
C1A
CBOOT1A

REF VREF
GH1A
High-Side
Drive RGH1A RGH1B
S1A

VREG
6-bit
GL1A
DAC Low-Side
Drive LSS1 RGL1A RGL1B

Programmable
PWM Timer SENSE1
SDO Blanking
Mixed Decay Phase 1B RSENSE1
P
Low-Side GL1B
Drive
S1B
Phase 1
Phase 1
SDI Control Logic High-Side GH1B
Drive CBOOT1B

C1B
VMOTOR
STR Serial Port Bridge2
Phase 2A C2A
CBOOT2A

GH2A
SCK Phase 2 High-Side
Phase 2 Drive RGH2A RGH2B
S2A
Control Logic
VREG

GL2A
Low-Side
Drive LSS2 RGL2A RGL2B
WC
Programmable
SENSE2
PWM Timer
Blanking RSENSE2
Phase 2B
Mixed Decay P
Low-Side GL2B
Drive
6-bit
DAC S2B

ENABLE
VREF GH2B
High-Side
Drive CBOOT2B
OSC Programmable Divider Protection
UVLO C2B
Oscillator TSD

GND

Allegro MicroSystems, Inc. 3


115 Northeast Cutoff, Box 15036
Worcester, Massachusetts 01615-0036 (508) 853-5000
www.allegromicro.com
Digitally Programmable
A3985
Dual Full-Bridge MOSFET Driver

ELECTRICAL CHARACTERISTICS at TA = 25°C, VDD = 5 V, VBB = 12 to 50 V, unless noted otherwise


Characteristics Symbol Test Conditions Min. Typ. Max. Units
Supply and Reference
Load Supply Voltage Range VBB 12 – 50 V
fMCK = 4 MHz, CLOAD = 1000 pF – – 10 mA
Load Supply Current IBB
ENABLE = High, outputs disabled – – 6 mA
Load Supply Idle Current IBBQ Word1:Bit D18 = 0 – – 100 μA
Logic Supply Voltage Range VDD 3.0 – 5.5 V
Logic Supply Current IDD – – 10 mA
Logic Supply Idle Current IDDQ Word1:Bit D18 = 0 – – 300 μA
Regulator Output VREG IREGInt = 30 mA 11.25 – 13 V
Bootstrap Diode Forward Voltage VfBOOT IfBOOT = 10 mA 0.6 0.8 1 V
Gate Output Drive
Turn-On Rise Time tr CLOAD = 1000 pF, 20% to 80% 80 120 160 ns
Turn-Off Fall Time tf CLOAD = 1000 pF, 80% to 20% 40 60 80 ns
Turn-On Propagation Delay tp(on) ENABLE low to gate drive on – 120 – ns
Turn-Off Propagation Delay tp(off) ENABLE high to gate drive off – 120 – ns
fMCK = 4 MHz,
Crossover Dead Time tDEAD 0.5 – 0.75 μs
Word1:Bits D1 and D2 = 00
Pull-Up On Resistance RDS(on)UP IGH = –25 mA 30 40 55 Ω
Pull-Down On Resistance RDS(on)DN IGL = 25 mA 14 19 24 Ω
Short-Circuit Current – Source1 ISC(source) –140 –110 –80 mA
Short-Circuit Current – Sink ISC(sink) 160 200 250 mA
GHx Output Voltage VGHx CBOOTx fully charged VC – 0.2 – – V
VREG –
GLx Output Voltage VGLx – – V
0.2
Logic Inputs
Input Low Voltage VIL – – 0.3 VDD V
Input High Voltage VIH 0.7 VDD – – V
Input Hysteresis VIHys 150 300 – mV
Input Current1 IIN –1 – 1 μA
Output Low Voltage VOL SDO, IOL= 0.5 mA 0.5 V
VDD – V
Output High Voltage VOH SDO, IOH= –0.3 mA
0.5
Output Leakage current1 IOleak SDO, STR = 1, 0 V< VO< VDD –1 1 μA

Continued on the next page...

Allegro MicroSystems, Inc. 4


115 Northeast Cutoff, Box 15036
Worcester, Massachusetts 01615-0036 (508) 853-5000
www.allegromicro.com
Digitally Programmable
A3985
Dual Full-Bridge MOSFET Driver

ELECTRICAL CHARACTERISTICS, continued, at TA = 25°C, VDD = 5 V, VBB = 12 to 50 V, unless noted otherwise


Characteristics Symbol Test Conditions Min. Typ. Max. Units
Current Control
fMCK = 4 MHz;
Blank Time tBLANK – 1 – μs
Word1:Bits D1 and D2 = 00
fMCK = 4 MHz,
Fixed Off-Time tOFF Word1:Bits D3 to D7 = 01010, and 21.75 – 22 μs
D15 = 0
Reference Input Voltage VREF 0.8 – 2 V
Internal Reference Voltage VREFInt 20 kΩ to VDD 1.9 2.0 2.1 V
Current Trip Point Error2 EITrip VREF = 2 V – – ±5 %
Reference Input Current 1 IREF –3 0 3 μA
Internal Oscillator Frequency fOSC ROSC = 10 kΩ 3.2 4 4.8 MHz
Maximum Clock Input Frequency fEXTmax External clock selected – 10 – MHz
Master Clock Frequency fMCK 0.5 4 5 MHz
Protection
VREG Undervoltage Lockout VREGUV Decreasing VREG 7.5 8 8.5 V
VREG Undervoltage Lockout
VREGUVHys 100 200 – mV
Hysteresis
VDD Undervoltage Lockout VDDUV Decreasing VDD 2.45 2.7 2.95 V
VDD Undervoltage Lockout
VDDUVHys 50 100 – mV
Hysteresis
Overtemperature Shut Down TTSD Temperature increasing – 165 – ºC
Overtemperature Shut Down
TTSDHys Recovery = TTSD – TTSDHys – 15 – ºC
Hysteresis

Continued on the next page...

THERMAL CHARACTERISTICS
Characteristic Symbol Test Conditions* Value Units
4-layer PCB, based on JEDEC standard 47 ºC/W
Package Thermal Resistance RθJA
1-layer PCB with copper limited to solder pads 114 ºC/W
*Additional thermal information available on Allegro Web site.

Allegro MicroSystems, Inc. 5


115 Northeast Cutoff, Box 15036
Worcester, Massachusetts 01615-0036 (508) 853-5000
www.allegromicro.com
Digitally Programmable
A3985
Dual Full-Bridge MOSFET Driver

ELECTRICAL CHARACTERISTICS, continued, at TA = 25°C, VDD = 5 V, VBB = 12 to 50 V, unless noted otherwise


Characteristics Symbol Test Conditions Min. Typ. Max. Units
Serial Data Timing
Serial Clock High Time tSCKH 50 – – ns
Serial Clock Low Time tSCKL 50 – – ns
Strobe Lead Time tSTLD 30 – – ns
Strobe Lag Time tSTLG 30 – – ns
Strobe High Time tSTRH 150 – – ns
Data Out Enable Time tSDOE – – 40 ns
Data Out Disable Time tSDOD – – 30 ns
Data Out Valid Time from SCK Falling tSDOV – – 40 ns
Data Out Hold Time from SCK Falling tSDOH 5 – – ns
Data In Set-up Time to SCK Rising tSDIS 15 – – ns
Data In Hold Time from SCK Rising tSDIH 10 – – ns
WC Set-up Time to STR Rising tSWCS 15 – – ns
WC Hold Time from STR Rising tSWCH 50 – – ns
WC Hold Time from STR Falling tSLWCH 30 – – ns
1For input and output current specifications, negative current is defined as coming out of (sourcing) the specified device pin.
2Current Trip Point Error is the difference between actual current trip point and the target current trip point, referred to full
scale (100%) current: EITrip = 100 × (ITripActual – ITripTarget) / IFullScale %

Serial Data Timing Diagram

WC
tSLWCH tSWCS tSWCH

STR
tSTLD tSCKH tSCKL tSTLG tSTRH

SCK
tSDIS tSDIH

SDI D18 D17 D0


tSDOE tSDOD
tSDOV tSDOH

SDO ** D18* D17* D0*

Dx = Current data transfer block


Dx* = Previous data transfer block
** = Undefined, usually LSB from previous transfer

Allegro MicroSystems, Inc. 6


115 Northeast Cutoff, Box 15036
Worcester, Massachusetts 01615-0036 (508) 853-5000
www.allegromicro.com
Digitally Programmable
A3985
Dual Full-Bridge MOSFET Driver

Functional Description

Basic Operation To limit the voltage drop when the charge current is pro-
The A3985 is a highly-configurable dual full-bridge FET vided, this pin should be decoupled with a ceramic capaci-
driver with built-in digital current control. All features are tor, CREG, to ground. The value CREG should typically
accessed through a simple SPI (Serial Peripheral Interface) be 40 times the value of the bootstrap capacitor for PWM
compatible serial port, allowing multiple motors to be con- frequencies up to 14 kHz. Above 14 kHz, the minimum
trolled with as few as three wires. recommended value can be determined from the following
formula:
Because the full-bridge control circuits are independently
controlled, the A3985 can be used to drive 2-phase bipolar CREG > CBOOT × 3 × fPWM ,
stepper motors and 2-phase brushless dc (BLDC) motors. where CREG and CBOOT are in nF, and fPWM is the maximum
The current in each of the two external power full-bridges PWM frequency, in kHz. VREG is monitored, and if the volt-
(which are all N-channel MOSFETs) is regulated by a fixed
age becomes too low, the outputs will be disabled.
off-time PWM control circuit. The full-bridge current at each
step is set by the value of an external current sense resistor, REF The reference voltage, VREF, at this pin sets the
RSENSEX , in the ground connection to the bridge, a reference maximum (100%) peak current. The REF input is internally
voltage, VREF, and the output of the DAC controlled by the limited to 2 V when a 20 kΩ pull-up resistor is connected
serial data. between VREF and VDD. This allows the maximum refer-
The use of PWM with N-channel MOSFETs provides the ence voltage to be set without the need for an externally-
most cost-effective solution for a high efficiency motor drive. generated voltage. An external reference voltage below the
The A3985 provides all the necessary circuits to ensure maximum can also be input on this pin. The voltage at VREF
that the gate-source voltage of both high-side and low-side is divided by the range select ratio Gm to produce the DAC
external MOSFETs are above 10 V, and that there is no cross- reference voltage level.
conduction (shoot through) in the external bridge. Specific OSC The PWM timing is based on a master clock, typically
functions are described more fully in the following sections. running at 4 MHz. The master clock period is used to derive
Power Supplies the PWM off-time, dead time, and blanking time.
Two power connections are required. The motor power sup- The master clock frequency can be set by an internal oscil-
ply should be connected to VBB to provide the gate drive lator or by one of three division ratios of an external clock.
levels. Power for internal logic is provided by the VDD These four options are selected by bits D12 and D13 of the
input. Internal logic is designed to operate from 3 to 5.5 V, Control register word.
allowing the use of 3.3 or 5 V external logic interface cir-
When the A3985 is configured to use an external clock,
cuits.
this is input on the OSC pin and will usually provide more
GND The ground pin is a reference voltage for internal logic precision than using the internal oscillator. The three internal
and analog circuits. There is no large current flow through divider alternatives provide flexibility in setting the master
this pin. To avoid any noise from switching circuits, this clock frequency based on available external system clocks.
should have an independent trace to the supply ground star
If internal timing is selected, fOSC is configured by using
point.
an external resistor, ROSC, connected from the OSC pin to
VREG The voltage at this pin is generated by a low-drop-out GND. This sets the frequency (in MHz) to approximately:
linear regulator from the VBB supply. It is used to oper-
ate the low-side gate drive outputs, GLxx, and to provide fOSC ≈ 100 / (6 + 1.9 × ROSC) ,
the charging current for the bootstrap capacitors, CBOOTx. where ROSC, in kΩ, is typically between 50 kΩ and 10 kΩ.

Allegro MicroSystems, Inc. 7


115 Northeast Cutoff, Box 15036
Worcester, Massachusetts 01615-0036 (508) 853-5000
www.allegromicro.com
Digitally Programmable
A3985
Dual Full-Bridge MOSFET Driver

SDI, SCK, STR, SDO These are the serial port interface is low. When the output swings high, the voltage on this ter-
pins. Data is clocked into SDI by a clock signal on SCK. minal rises with the output to provide the boosted gate volt-
The data is then latched by a signal on STR. If required, the age needed for the high-side N-channel power MOSFETs.
serial data out pin, SDO, can be used to read back the previ- The bootstrap capacitor should be ceramic and have a value
ously-latched serial data or to form a daisy chain for multiple of 10 to 20 times the total MOSFET gate capacitance.
controllers using a single STR connection. (For bit assign-
GH1A, GH1B, GH2A, and GH2B High-side gate drive
ment details, see the Bit Assignments table.) outputs for external N-channel MOSFETs. External series
WC This input provides a lockout capability for writing gate resistors can be used to control the slew rate seen at
to the Control register. When set to logic high, no changes the gate, thereby controlling the di/dt and dv/dt at the motor
can be made to the Control register through the serial port. terminals. GHxx = 1 (high) means that the upper half of the
When at logic low, the data on the serial port will update the driver is turned on and will source current to the gate of the
Control register (if selected by D0 = 1) while STR is high. high-side MOSFET in the external motor-driving bridge.
This provides a mechanism to avoid inadvertently changing GHxx = 0 (low) means that the lower half of the driver is
the Control register settings by erroneous or corrupt serial turned on and will sink current from the external MOSFET
data signals. gate circuit to the respective Sxx pin.
S1A, S1B, S2A, and S2B Directly connected to the
Gate Drive motor, these terminals sense the voltages switched across the
load and define the negative supply for the floating high-side
The A3985 is designed to drive external power N-chan-
drivers. The discharge current from the high-side MOSFET
nel MOSFETs. It supplies the transient currents necessary
gate capacitance flows through these connections which
to quickly charge and discharge the external FET gate
should have low impedance traces to the MOSFET bridge.
capacitance in order to reduce dissipation in the external
FET during switching. The charge and discharge rate can GL1A, GL1B, GL2A, and GL2B Low-side gate drive
be controlled using an external resistor, RGx, in series with outputs for external N-channel MOSFETs. External series
the connection to the gate of the FET. Cross-conduction is gate resistors (as close as possible to the MOSFET gate)
prevented by the gate drive circuits which introduce a dead can be used to reduce the slew rate seen at the gate, thereby
time, tDEAD , between switching one FET off and the comple- controlling the di/dt and dv/dt at the motor terminals.
mentary FET on. tDEAD is at least 2, 3, 4, or 6 periods of the GLxx = 1 (high) means that the upper half of the driver is
master clock, depending on the corresponding value set in turned on and will source current to the gate of the low-side
the Control register (Word 1: bits D1 and D2). tDEAD can be MOSFET in the external motor-driving bridge. GLxx = 0
up to 1 cycle longer than the programmed value, to allow (low) means that the lower half of the driver is turned on and
synchronization with the master clock. will sink current from the gate of the external MOSFET to
the LSSx pin.
ENABLE This input simply turns off all of the power MOS-
LSS1 and LSS2 Low-side return path for discharge of the
FETs. Set to logic high to disable outputs. When at logic low,
gate capacitors, connected to the common sources of the
the internal control enables the outputs as required. Inputs to
low-side external FETs through low-impedance traces.
the registers and the internal sequencing logic are all active
independent of the ENABLE input state.
Internal PWM Current Control
C1A, C1B, C2A, and C2B High-side connections for the Each full-bridge is independently controlled by a fixed off-
bootstrap capacitors, CBOOTx, and positive supply for high- time PWM current control circuit that limits the load current
side gate drivers. The bootstrap capacitors are charged to in the phase to a desired value, ITrip. Initially, a diagonal pair
approximately VREG when the associated output Sxx terminal of source and sink MOSFETs are enabled and current flows

Allegro MicroSystems, Inc. 8


115 Northeast Cutoff, Box 15036
Worcester, Massachusetts 01615-0036 (508) 853-5000
www.allegromicro.com
Digitally Programmable
A3985
Dual Full-Bridge MOSFET Driver

through the motor winding and the current sense resistor, blanking function The blank timer is reset when PHASE is
RSENSEx. When the voltage across RSENSEx equals the changed.
DAC output voltage, the current sense comparator resets
The blank time can be set to 4, 6, 8, or 12 periods of the mas-
the PWM latch, which turns off the source MOSFET (slow
ter clock by programming the blank time bits in the Control
decay mode) or the sink and source MOSFETs (fast decay
register (Word1, Bits D1 and D2) using the serial port.
mode). The maximum value of current limiting is set by the
selection of RSENSE and the voltage at the REF input, with a Dead Time To prevent cross-conduction (shoot through)
transconductance function approximated by: in the power full-bridge, a dead time, tDEAD , is introduced
ITrip(max) = VREF / (Gm × RSENSE) , between switching one MOSFET off and switching the
complementary MOSFET on. The dead time, tDEAD, is
where Gm is the range factor defined by in the Data register nominally half of tBLANK , but may be up to 1 cycle longer to
(Word0: Bits D17 and D18).
synchronize with the master clock.
The DAC output reduces the VREF output to the current
sense comparator, VDAC, in precise steps: Mixed Decay Operation
VDAC = [(1 + DAC) × VREF] / 64 , Mixed decay is a technique that provides greater control
of phase currents while the current is decreasing. When a
where DAC is the decimal equivalent value of the Bridge stepper motor is driven at high speed, the back EMF from
DAC bits in the Data register (Word0: Bits D1 through D6 the motor will lag behind the driving current. If a passive
for Bridge 1, Bits 9 through 14 for Bridge 2). (Active codes current decay mode, such as slow decay, is used in the cur-
are represented by the values 1 through 63. Programming a rent control scheme, then the motor back EMF can cause the
DAC input code to 0 disables the corresponding bridge, and phase current to rise out of control. Mixed decay eliminates
results in minimum load current.) this effect by putting the full-bridge initially into fast decay,
The current trip level for each DAC value then becomes: and then switching to slow decay after some time. Because
fast decay is an active (driven) decay mode, this portion of
ITripDAC = VDAC / (Gm × RSENSE) . the current decay cycle will ensure that the current remains
in control. Using fast decay for the full current decay time
PWM Timer Function All bridge control timing is based (off-time, tOFF) would result in a large ripple current, but
on the master clock. The PWM timer is programmed via the switching to slow decay once the current is in control will
serial port to provide fixed off-time PWM signals to the con-
reduce the ripple current value. The portion of the off-time
trol block. The off-time, tOFF , is selected by programming
that the full-bridge has to remain in fast decay will depend
the Off-Time bits in the Control register (Word1, Bits D3
on the characteristics and the speed of the motor.
through D7) using the serial port. tOFF may be up to 1 cycle
longer than the programmed value, to synchronize with the When the phase current is rising, the motor back EMF does
master clock. not affect the current control, and slow decay may be used
to minimize the phase current ripple. The A3985 must be
Blanking When a source driver is turned on, a current
programmed to switch between slow decay, when the cur-
spike occurs due to the reverse-recovery currents of the
rent is rising, and mixed decay, when the current is falling.
clamp diodes and switching transients related to distributed
To simplify this programming sequence the decay mode is
capacitance in the load. To prevent false overcurrent detec-
included in the data word (Word0) with the phase current trip
tion due to this current spike, the output from the current
level and the phase current direction.
sense comparator is ignored (blanked) for a duration of time
called the blank time. The blank timer runs, when a source When mixed decay is used, the portion of the off-time that
power MOSFET is turned on, to provide the programmable the full-bridge remains in fast decay, tFD , is selected by pro-

Allegro MicroSystems, Inc. 9


115 Northeast Cutoff, Box 15036
Worcester, Massachusetts 01615-0036 (508) 853-5000
www.allegromicro.com
Digitally Programmable
A3985
Dual Full-Bridge MOSFET Driver

gramming the Fast Decay Time bits in the Control register be used to connect several A3985s in a serial daisy chain.
(Word1, Bits D8 through D11). If tFD is set longer than tOFF , The programmable functions allow maximum flexibility in
the device effectively operates in full fast decay mode. configuring the PWM to the motor drive requirements. The
Selecting between slow decay and mixed decay is done by serial data is written as two 19-bit words: 18 bits of data plus
programming the Mode bits in the Data register (Word0, Bits 1 bit to select the destination register.
D8 and D16) using the serial port.
Serial Port Write Timing Operation The serial port tim-
ing requirements are specified in the electrical characteristics
Synchronous Rectification When a PWM off-cycle
table, and illustrated in the Serial Data Timing diagram.
is triggered, load current recirculates according to the decay
mode selected by the control logic. The synchronous rectifi- Data is received on the SDI pin and clocked through a shift
cation feature turns on the appropriate MOSFETs during the register on the rising edge of the clock signal received on the
current decay and effectively shorts out the body diodes with SCK pin. STR is normally held high, and is only brought low
the low RDS(ON) of the MOSFET. This lowers power dis- to initiate a write cycle. No data is clocked through the shift
sipation significantly and eliminates the need for additional
register when STR is high.
Schottky diodes.
The 18 data bits for a register are input MSB first, fol-
Synchronous rectification can be set to one of three distinct lowed by the register select bit, D0. After D0 is clocked
modes by programming the Synchronous Rectification bits into the shift register, STR goes high to latch the data into
in the Control register (Word1, Bits D14 through D15) using the selected register. When this occurs, the internal control
the serial port. The modes are: circuits immediately act on the new data.
• Active This mode prevents reversal of the load current by
The Control register can only be written if the WC pin is at
turning off synchronous rectification when a zero current
logic low. If WC is high and D0 = 1 (indicating the Control
level is detected. This prevents the motor winding from
conducting in the reverse direction. register), the data will be ignored on the rising edge of STR.
• Passive This mode allows reversal of current, but will The state of the WC pin does not affect writing to the Data
turn of the synchronous rectifier circuit if the load current register, and the pin can be tied to GND when Control regis-
inversion ramps up to the current limit, ITripDAC. ter protection is not required.
• Disabled During this mode, MOSFET switching does not
Note that the number of bits clocked through the shift reg-
occur during load recirculation. Usually, this setting would
ister is irrelevant and only the last 19 bits before STR goes
only be used with 4 additional external clamp diodes per
bridge. high will be latched. This allows several A3985 devices to be
daisy-chained and updated together with a single STR rising
Shutdown Operation In the event of an overtempera- edge.
ture fault, or an undervoltage fault on VREG, the gate drive
outputs are disabled until the fault condition is removed.
Data Register (Word 0) Bit Assignments
At power-up, and in the event of low voltage at VDD, the
under voltage lockout (UVLO) circuit disables the gate drive This section describes the function of the individual bit
outputs until the voltage at VDD reaches the minimum level. values in the Data register, one of the two registers accessed
Once VDD is above the minimum level, the data in the serial through the serial port. The assignments are summarized in
port is reset to all 0s, ensuring a safe power-up condition. the Bit Assignments table.
D0 – Register Select Indicates which register should
Serial Interface
receive the data. For the Data register, this is set to 0.
The A3985 is controlled by a 3-wire serial port using data,
clock and strobe inputs on the SDI, SCK and STR pins D1 through D6 – Bridge 1 Linear DAC These six bits
respectively. An additional serial data output on SDO can set the desired current level for Bridge 1. Setting all six bits

Allegro MicroSystems, Inc. 10


115 Northeast Cutoff, Box 15036
Worcester, Massachusetts 01615-0036 (508) 853-5000
www.allegromicro.com
Digitally Programmable
A3985
Dual Full-Bridge MOSFET Driver

to 0 disables Bridge 1, with all drivers off (see Internal PWM Control Register (Word 1) Bit Assignments
Current Control, in the Functional Description section).
This section describes the function of the individual bit val-
D7 – Bridge 1 Phase Controls the direction of output cur- ues in the Control register, one of the two registers accessed
rent for Bridge (load) 1. through the serial port. The assignments are summarized in
D7 S1A S1B the Bit Assignments table.
0 L H Note that the Control register can only be updated when the
1 H L WC pin is logic low.
D8 – Bridge 1 Mode Determines whether slow decay is D0 – Register Select Indicates which register should
forced or mixed decay, according to Word 1 Bits D3 to D11, receive the data. For the Control register, this is set to 1.
is allowed.
D8 Mode
D1 and D2 – Blank Time These two bits set the value of
the scaling factor, α / fMCK, used for determining tBLANK for
0 Mixed-decay
the current-sense comparator. The factor for tDEAD also is set,
1 Slow-decay
because tDEAD = tBLANK / 2 .
D9 – D14 Bridge 2 Linear DAC These six bits set the
desired current level for Bridge 2. Setting all six bits to 0 D2 D1 tBLANK tDEAD
disables Bridge 2, with all drivers off (see Internal PWM (tBLANK/ 2)
Current Control, in the Functional Description section). 0 0 4 / fMCK 2 / fMCK
D15 – Bridge 2 Phase Controls the direction of output 0 1 6 / fMCK 3 / fMCK
current for Bridge (load) 2. 1 0 8 / fMCK 4 / fMCK

D15 S2A S2B 1 1 12 / fMCK 6 / fMCK

0 L H D3 through D7 – Fixed Off Time These five bits set the


1 H L fixed off-time for the internal PWM control circuitry. Fixed
off-time is defined by:
D16 – Bridge 2 Mode Determines whether slow decay is
forced or mixed decay, according to Word 1 Bits D3 to D11, tOFF = [(1 + n) × (8 / fMCK)] – 1 / fMCK ,
is allowed.
D16 Mode where n = 0 to 31.
0 Mixed-decay For example, with a master clock frequency of 4 MHz, the
1 Slow-decay fast-decay time would be adjustable within the range
1.75 to 63.75 μs, in increments of 2 μs.
D17 and D18 – Gm Range Select These bits determine
the range scaling factor, Gm , used in PWM current control, D8 through D11 – Fast Decay Time These four bits set
according to the following formula: the fast decay portion of fixed off-time for the internal PWM
ITripDAC = VDAC / (Gm × RSENSEx) control circuitry. The fast-decay portion is defined by:

D18 D17 Gm tFD = [(1 + n) × 8 / fMCK)] – 1 / fMCK ,


0 0 8 where n = 0 to 15.
0 1 12
For example, with a master clock frequency of 4 MHz, the
1 0 16
fast decay time would be adjustable within the range
1 1 20 1.75 to 32.75 μs, in increments of 2 μs.

Allegro MicroSystems, Inc. 11


115 Northeast Cutoff, Box 15036
Worcester, Massachusetts 01615-0036 (508) 853-5000
www.allegromicro.com
Digitally Programmable
A3985
Dual Full-Bridge MOSFET Driver

Note that, for tFD > tOFF , the device effectively operates in D14 and D15 – Synchronous Rectification Two bits
full fast-decay mode. are used to set the mode for sunchronous rectification. The
modes are described in the synchronous rectification section
D12 and D13 – Master Clock Control An internal
of the Functional Description section.
oscillator can be used for the timing functions, and if more
precise control is required, an external clock can be input to Synchronous
the OSC terminal (for configuration information, refer to the D15 D14
Rectification Mode
Functional Description section). To accommodate a wider
0 0 Disabled
range of external system clocks, an internal divider is pro-
vided to generate the desired master clock frequency, fMCK , 0 1 Disabled
according to the following table: 1 0 Active
1 1 Passive
D13 D12 Master Clock Source and fMCK
D16 and D17 – Reserved These bits are reserved for test-
0 0 Internal oscillator* ing and should be programmed to 0 during normal operation.
0 1 External clock rate D18 – Idle Mode The device can be placed in a low power
1 0 External clock rate / 2 mode by writing a 0 to D18. This disables the outputs and
1 1 External clock rate / 4 the device draws a lower load supply current. The undervolt-
age monitor circuit remains active. When leaving idle mode,
*4 MHz typical, configurable with external resistor, ROSC.
D18 should be set to 1 for 1 ms before attempting to enable
any output driver.

Bit Assignments Table


Data Register Control Register
Word Bit Function Word Bit Function
D0 Register Select = 0 D0 Register Select = 1
D1 Bridge 1, DAC bit 0 (LSB) D1 Blank-time bit 0 (LSB)
D2 Bridge 1, DAC bit 1 D2 Blank-time bit 1 (MSB)
D3 Bridge 1, DAC bit 2 D3 Off-time bit 0 (LSB)
D4 Bridge 1, DAC bit 3 D4 Off-time bit 1
D5 Bridge 1, DAC bit 4 D5 Off-time bit 2
D6 Bridge 1, DAC bit 5 (MSB) D6 Off-time bit 3
D7 Bridge 1, Phase D7 Off-time bit 4 (MSB)
D8 Bridge 1, Mode D8 Fast-decay time bit 0 (LSB)
0 D9 Bridge 2, DAC bit 0 (LSB) 1 D9 Fast-decay time bit 1
D10 Bridge 2, DAC bit 1 D10 Fast-decay time bit 2
D11 Bridge 2, DAC bit 2 D11 Fast-decay time bit 3 (MSB)
D12 Bridge 2, DAC bit 3 D12 Master Clock Control bit 0 (LSB)
D13 Bridge 2, DAC bit 4 D13 Master Clock Control bit 1 (MSB)
D14 Bridge 2, DAC bit 5 (MSB) D14 Synchronous Rectification Control bit 0 (LSB)
D15 Bridge 2, Phase D15 Synchronous Rectification Control bit 1 (MSB)
D16 Bridge 2, Mode D16 Reserved
D17 Range Select bit 0 D17 Reserved
D18 Range Select bit 1 D18 Idle Mode

Allegro MicroSystems, Inc. 12


115 Northeast Cutoff, Box 15036
Worcester, Massachusetts 01615-0036 (508) 853-5000
www.allegromicro.com
Digitally Programmable
A3985
Dual Full-Bridge MOSFET Driver

Applications Information

Current Sensing 3. The GND pin should be connected by an independent low-


impedance trace to the supply common at a single point.
To minimize inaccuracies in sensing the IPEAK current
level caused by ground-trace IR drops, the sense resistor, 4. Check the peak voltage excursion of the transients on
RSENSEx, should have an independent return to the supply the LSS pin with reference to the GND pin using a close
ground star point. For low-value sense resistors, the IR drops grounded (tip and barrel) probe. If the voltage at LSS
in the sense resistor PCB traces can be significant and should exceeds the specified absolute maximum add additional
be taken into account. The use of sockets should be avoided
clamping, capacitance, or both, between the LSS pin and the
as they can introduce variation in RENSESx due to their
AGND pin.
contact resistance.
Other layout recommendations:
Thermal Protection
All drivers are turned off when the junction temperature 1. Gate charge drive paths and gate discharge return paths
reaches 165°C typical. This is intended only to protect the may carry transient current pulses. Therefore, the traces from
A3985 from failures due to excessive junction temperatures. GHxx, GLxx, Sxx, and LSSx should be as short as possible to
Thermal protection will not protect the A3985 from continu- reduce the inductance of the circuit trace.
ous short circuits. Thermal shutdown has a hysteresis of
2. Provide an independent connection from each LSS pin
approximately 15°C.
to the common point of each power bridge. It is not recom-
Circuit Layout mended to connect LSS directly to the GND pin. The LSS
Since this is a switch-mode application, where rapid current connection should not be used for the SENSE connection.
changes are present, care must be taken during layout of the 3. Minimize stray inductance by using short, wide copper
application PCB. The following points are provided as guid-
runs at the drain and source terminals of all power FETs.
ance for layout. Following all guidelines will not always be
This includes motor lead connections, the input power bus,
possible. However, each point should be carefully considered
as part of any layout procedure. and the common source of the low-side power FETs. This
will minimize voltages induced by fast switching of large
Ground Connection Layout Recommendations: load currents.
1. Decoupling capacitors for the supply pins VBB, VREG,
4. Consider the use of small (100nF) ceramic decoupling
and VDD should be connected independently, close to the
capacitors across the source and drain of the power FETs to
GND pin, and not to any ground plane. The decoupling
capacitors should also be connected as close as possible to limit fast transient voltage spikes caused by trace inductance.
the corresponding supply pin. The above are only recommendations. Each application is
2. If used, the oscillator timing resistor ROSC should be different and may encounter different sensitivities. Each
connected to the GND pin. It should not be connected to any design should be tested at the maximum current, to ensure
ground plane, supply common, or the power ground. any parasitic effects are eliminated.

Allegro MicroSystems, Inc. 13


115 Northeast Cutoff, Box 15036
Worcester, Massachusetts 01615-0036 (508) 853-5000
www.allegromicro.com
Digitally Programmable
A3985
Dual Full-Bridge MOSFET Driver
Pin-out Diagram
C2A 1 38 C2B
GH2A 2 37 GH2B
S2A 3 Bridge 2 36 S2B
Control
GL2A 4 35 GL2B
NC 5 34 NC
VREG 6 33 LSS2
VBB 7 32 SENSE2
GL1A 8 31 WC
S1A 9 30 SDO
Serial
GH1A 10 Interface
29 SDI
C1A 11 28 STR
C1B 12 27 SCK
GH1B 13 26 NC
S1B 14 Bridge 1 25 VDD
Control
GL1B 15 24 NC
LSS1 16 23 OSC
SENSE1 17 22 NC
NC 18 21 REF
ENABLE 19 20 GND

Terminal List Table


Number Name Description
1 C2A Phase 2 bootstrap capacitor drive A connection
2 GH2A Phase 2 high-side gate drive A
3 S2A Phase 2 motor connection A
4 GL2A Phase 2 low-side gate drive A
5 NC No internal connection
6 VREG Regulator decoupling capacitor connection
7 VBB Motor supply voltage
8 GL1A Phase 1 low-side gate drive A
9 S1A Phase 1 motor connection A
10 GH1A Phase 1 high-side gate drive A
11 C1A Phase 1 bootstrap capacitor drive A connection
12 C1B Phase 1 bootstrap capacitor drive B connection
13 GH1B Phase 1 high-side gate drive B
14 S1B Phase 1 motor connection B
15 GL1B Phase 1 low-side gate drive B
16 LSS1 Phase 1 low-side source connection
17 SENSE1 Phase 1 bridge current sense input
18 NC No internal connection
19 ENABLE Output enable
20 GND Ground
21 REF Reference voltage
22 NC No internal connection
23 OSC External clock input, ROSC resistor connection
24 NC No internal connection
25 VDD Logic supply voltage
26 NC No internal connection
27 SCK Serial Data Clock
28 STR Serial Data Strobe
29 SDI Serial Data Input
30 SDO Serial Data Output
31 WC Write Configuration Enable
32 SENSE2 Phase 2 bridge current sense input
33 LSS2 Phase 2 low-side source connection
34 NC No internal connection
35 GL2B Phase 2 low-side gate drive B
36 S2B Phase 2 motor connection B
37 GH2B Phase 2 high-side gate drive B
38 C2B Phase 2 bootstrap capacitor drive B connection

Allegro MicroSystems, Inc. 14


115 Northeast Cutoff, Box 15036
Worcester, Massachusetts 01615-0036 (508) 853-5000
www.allegromicro.com
Digitally Programmable
A3985
Dual Full-Bridge MOSFET Driver

LD Package, 38-Pin TSSOP

9.8 .386 8º
A
9.6 .378 0º
38 B
0.20 .008
0.09 .004

4.5 .177
4.3 .169
0.75 .030
0.45 .018
6.6 .260
6.2 .244
A 1 .039
REF

1 2

0.25 .010

38X C SEATING PLANE


SEATING
0.10 [.004] C PLANE GAUGE PLANE

0.27 .011
38X 0.50 .020 1.20 .047
0.17 .007
MAX
0.08 [.003] M C A B
0.15 .006
0.00 .000

0.30 .012 36X 0.20 .008


1.85 .073 NOM MIN
NOM 0.50 .020
38
NOM
Preliminary dimensions, for reference only
(reference JEDEC MO-153 BD-1)
Dimensions in millimeters
U.S. Customary dimensions (in.) in brackets, for reference only
Dimensions exclusive of mold flash, gate burrs, and dambar protrusions
B
Exact case and lead configuration at supplier discretion within limits shown
A Terminal #1 mark area
5.9 .232
NOM B Reference land pattern layout (reference IPC7351
TSSOP50P640X120-38M); adjust as necessary to meet
application process requirements and PCB layout tolerances

1 2

The products described here are manufactured under one or more U.S. patents or U.S. patents pending.
Allegro MicroSystems, Inc. reserves the right to make, from time to time, such departures from the detail specifications as may be
required to permit improvements in the performance, reliability, or manufacturability of its products. Before placing an order, the user is
cautioned to verify that the information being relied upon is current.
Allegro products are not authorized for use as critical components in life-support devices or systems without express written approval.
The information included herein is believed to be accurate and reliable. However, Allegro MicroSystems, Inc. assumes no responsibility
for its use; nor for any infringement of patents or other rights of third parties which may result from its use.

Copyright©2005, 2006 AllegroMicrosystems, Inc.

Allegro MicroSystems, Inc. 15


115 Northeast Cutoff, Box 15036
Worcester, Massachusetts 01615-0036 (508) 853-5000
www.allegromicro.com

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