March 2002
AO4406
N-Channel Enhancement Mode Field Effect Transistor
General Description Features
The AO4406 uses advanced trench technology to VDS (V) = 30V
provide excellent RDS(ON), low gate charge and ID = 11.5A
operation with gate voltages as low as 2.5V. This RDS(ON) < 14mΩ (VGS = 10V)
device makes an excellent high side switch for RDS(ON) < 16.5mΩ (VGS = 4.5V)
notebook CPU core DC-DC conversion.
RDS(ON) < 26mΩ (VGS = 2.5V)
S D
S D
S D
G D G
S
SOIC-8
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter Symbol Maximum Units
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS ±12 V
Continuous Drain TA=25°C 11.5
A
Current TA=70°C ID 9.6 A
B
Pulsed Drain Current IDM 80
Avalanche Current B,E IAV 25 A
B,E
Repetitive Avalanche Energy L=0.1mH EAV 78 mJ
TA=25°C 3
PD W
Power Dissipation TA=70°C 2.1
Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C
Thermal Characteristics
Parameter Symbol Typ Max Units
A
Maximum Junction-to-Ambient t ≤ 10s 23 40 °C/W
RθJA
Maximum Junction-to-Ambient A Steady-State 48 65 °C/W
Maximum Junction-to-Lead C Steady-State RθJL 12 16 °C/W
Alpha & Omega Semiconductor, Ltd.
AO4406
Electrical Characteristics (T J=25°C unless otherwise noted)
Symbol Parameter Conditions Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 30 V
VDS=24V, VGS=0V 1
IDSS Zero Gate Voltage Drain Current µA
TJ=55°C 5
IGSS Gate-Body leakage current VDS=0V, VGS= ±12V 100 nA
VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 0.8 1 1.5 V
ID(ON) On state drain current VGS=4.5V, VDS=5V 60 A
VGS=10V, ID=12A 11.5 14
mΩ
TJ=125°C 16 19.2
RDS(ON) Static Drain-Source On-Resistance
VGS=4.5V, ID=10A 13.5 16.5 mΩ
VGS=2.5V, ID=8A 19.5 26 mΩ
gFS Forward Transconductance VDS=5V, ID=10A 25 38 S
VSD Diode Forward Voltage IS=10A,VGS=0V 0.83 1 V
IS Maximum Body-Diode Continuous Current 4.5 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 1630 pF
Coss Output Capacitance VGS=0V, VDS=15V, f=1MHz 201 pF
Crss Reverse Transfer Capacitance 142 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 0.8 Ω
SWITCHING PARAMETERS
Qg Total Gate Charge 18 nC
Qgs Gate Source Charge VGS=4.5V, VDS=15V, ID=11.5A 2.5 nC
Qgd Gate Drain Charge 5.5 nC
tD(on) Turn-On DelayTime 4 ns
tr Turn-On Rise Time VGS=10V, VDS=15V, RL=1.2Ω, 5 ns
tD(off) Turn-Off DelayTime RGEN=3Ω 32 ns
tf Turn-Off Fall Time 5 ns
trr Body Diode Reverse Recovery Time IF=10A, dI/dt=100A/µs 18,7 ns
Qrr Body Diode Reverse Recovery Charge IF=10A, dI/dt=100A/µs 19.8 nC
A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in
any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve
provides a single pulse rating.
Alpha & Omega Semiconductor, Ltd.
AO4406
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
50
30
10V 4.5V
40 3V 2.5V 25 VDS=5V
20
30
ID (A)
ID(A)
15
20
2V
10 125°C
10 25°C
5
VGS=1.5V
0 0
0 1 2 3 4 5 0 0.5 1 1.5 2 2.5 3
VDS (Volts)
VGS(Volts)
Fig 1: On-Region Characteristics
Figure 2: Transfer Characteristics
30 1.8
ID=10A VGS=10V
25
Normalized On-Resistance
VGS=2.5V 1.6
20 VGS=4.5V
RDS(ON) (mΩ)
1.4
VGS=4.5V
15
VGS=2.5V
1.2
10 VGS=10V
5 1
0 0.8
0 5 10 15 20 25 30 0 25 50 75 100 125 150 175
ID (A) Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Figure 4: On-Resistance vs. Junction
Gate Voltage Temperature
40 1.0E+01
ID=10A VGS=0V
1.0E+00
30 125°C
1.0E-01
RDS(ON) (mΩ)
125°C
IS (A)
20 1.0E-02
25°C
25°C 1.0E-03
10
1.0E-04
1.0E-05
0
0.0 0.2 0.4 V 0.6 0.8 1.0 1.2
0.00 2.00 4.00 6.00 8.00 10.00 SD (Volts)
VGS (Volts) Figure 6: Body-Diode Characteristics
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha and Omega Semiconductor, Ltd.
AO4406
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5 2500
VDS=15V
2250
ID=11.5A
4 2000
Capacitance (pF)
1750 Ciss
VGS (Volts)
3 1500
1250
2 1000
750
Coss
1 Crss
500
250
0
0
0 4 8 12 16 20 24
0 5 10 15 20 25 30
Qg (nC) VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics
100.0
50
TJ(Max)=150°C
RDS(ON)
1ms TA=25°C
limited 40
100µs
10.0 10ms
Power (W)
30
ID (Amps)
0.1s
1s 20
1.0 10s
10
TJ(Max)=150°C
TA=25°C DC
0
0.1 0.001 0.01 0.1 1 10 100 1000
0.1 1 10 100 Pulse Width (s)
VDS (Volts) Figure 10: Single Pulse Power Rating Junction-to-
Figure 9: Maximum Forward Biased Safe Ambient (Note E)
Operating Area (Note E)
10
D=Ton/T In descending order
TJ,PK=TA+PDM.ZθJA.RθJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
ZθJA Normalized Transient
RθJA=40°C/W
Thermal Resistance
0.1 PD
Single Pulse Ton
T
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
AO4406
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
70 4
TA=25°C
ID(A), Peak Avalanche Current
60
Power Dissipation (W)
50 L ⋅ ID 3
tA =
BV − VDD
40
2
30 10s
20
1
Steady-
10 State
0 0
0.00001 0.0001 0.001 25 50 75 100 125 150
Time in avalanche, t A (s) TCASE (°C)
Figure 12: Avalanche capability Figure 13: Power De-rating (Note A)
Alpha & Omega Semiconductor, Ltd.
ALPHA & OMEGA SO-8 Package Data
SEMICONDUCTOR, INC.
DIMENSIONS IN MILLIMETERS DIMENSIONS IN INCHES
SYMBOLS
MIN NOM MAX MIN NOM MAX
A 1.45 1.50 1.55 0.057 0.059 0.061
A1 0.00 −−− 0.10 0.000 −−− 0.004
A2 −−− 1.45 −−− −−− 0.057 −−−
b 0.33 −−− 0.51 0.013 −−− 0.020
c 0.19 −−− 0.25 0.007 −−− 0.010
D 4.80 −−− 5.00 0.189 −−− 0.197
E1 3.80 −−− 4.00 0.150 −−− 0.157
e 1.27 BSC 0.050 BSC
E 5.80 −−− 6.20 0.228 −−− 0.244
h 0.25 −−− 0.50 0.010 −−− 0.020
L 0.40 −−− 1.27 0.016 −−− 0.050
aaa −−− −−− 0.10 −−− −−− 0.004
θ 0° −−− 8° 0° −−− 8°
θ
NOTE:
1. LEAD FINISH: 150 MICROINCHES ( 3.8 um) MIN.
THICKNESS OF Tin/Lead (SOLDER) PLATED ON LEAD
2. TOLERANCE ±0.10 mm (4 mil) UNLESS OTHERWISE
SPECIFIED
3. COPLANARITY : 0.10 mm
4. DIMENSION L IS MEASURED IN GAGE PLANE
PACKAGE MARKING DESCRIPTION RECOMMENDED LAND PATTERN
NOTE:
LOGO - AOS LOGO
4406 - PART NUMBER CODE.
F - FAB LOCATION
A - ASSEMBLY LOCATION
Y - YEAR CODE
W - WEEK CODE.
LN - ASSEMBLY LOT CODE
SO-8 PART NO. CODE
UNIT: mm
PART NO. CODE
AO4406 4406
Rev. A
ALPHA & OMEGA SO-8 Tape and Reel Data
SEMICONDUCTOR, INC.
SO-8 Carrier Tape
SO-8 Reel
SO-8 Tape
Leader / Trailer
& Orientation
