INTEGRATED CIRCUITS

DATA SHEET

TDA8040T
Quadrature demodulator
Objective specification 1996 Oct 08
Supersedes data of 1995 Feb 07
File under Integrated Circuits, IC02
Philips Semiconductors Objective specification

Quadrature demodulator TDA8040T

FEATURES It has been designed to operate in conjunction with the

TDA8041H to provide a complete QPSK demodulator.
• +5 V supply voltage
• Bandgap internal reference voltage The design of this circuit has been optimized to provide the
best quadrature accuracy necessary for digital receiver
• Low crosstalk between I (in-phase) and Q (quadrature) applications and particularly for digital television.
channel outputs
The TDA8040T includes two matched mixers, an
• High operating input sensitivity
RF amplifier, a symmetrical Voltage Controlled Oscillator
• High Carrier-to-Noise Ratio (CNR) of the VCO. (VCO), a frequency divider and two matched amplifiers.
Two external filters are required for the baseband filtering.
APPLICATIONS The VCO requires an external LC tank circuit with two
• Quadrature Phase Shift Keying (QPSK) demodulation. varicap diodes. This oscillator operates at twice the
IF carrier frequency and can be used in a carrier recovery
AFC loop.
GENERAL DESCRIPTION
The TDA8040T is a monolitic bipolar IC dedicated for
quadrature demodulation.

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

VCC supply voltage 4.5 5.0 5.5 V
ICC(tot) total supply current VCC = 5 V 70 79 90 mA
Vi(RF) operating input voltage level 64 67 70 dBµV
fi(RF) RF input signal frequency 10.7 − 150 MHz
VolQ(p-p) I and Q output voltage − 0.5 − V
(peak-to-peak value)
Eφ(IQ) phase error between the − − 3 deg
I and Q channels
EG(IQ) gain error between the − − 1 dB
I and Q channels
EG(tilt) gain tilt error in the I and Q channels − − 1 dB
αct(IQ) crosstalk between the 30 − − dB
I and Q channels
IM3 intermodulation distortion in the 40 − − dB
I and Q channels

ORDERING INFORMATION

PACKAGE
TYPE NUMBER
NAME DESCRIPTION VERSION
TDA8040T SO16 plastic small outline package; 16 leads; body width 3.9 mm SOT109-1

1996 Oct 08 2
Philips Semiconductors Objective specification

Quadrature demodulator TDA8040T

BLOCK DIAGRAM

handbook, full pagewidth

1 16
VCC(A) Iin

15
AMP Iout
2
I AMP
VOLTAGE 14
3 VCC(V)
GND(D) REFERENCE

0 13
4 VCOB
RF A
5 AMP ÷2 VCO
RF B 12
VCOA
90

6 11
VCC(D) GND(V)
7 10
Q AMP AMP Qout

8 9
GND(A) TDA8040T Qin

MGE511

Fig.1 Block diagram.

1996 Oct 08 3
Philips Semiconductors Objective specification

Quadrature demodulator TDA8040T

PINNING

SYMBOL PIN DESCRIPTION

VCC(A) 1 supply voltage for I and Q amplifiers
I 2 I channel buffer output
handbook, halfpage
GND(D) 3 demodulator ground VCC(A) 1 16 Iin
RF A 4 RF input A I 2 15 Iout
RF B 5 RF input B
GND(D) 3 14 VCC(V)
VCC(D) 6 supply voltage for demodulator
RF A 4 13 VCOB
Q 7 Q channel buffer output TDA8040T
RF B 5 12 VCOA
GND(A) 8 I and Q amplifiers ground
Qin 9 Q channel amplifier input VCC(D) 6 11 GND(V)

Qout 10 Q channel amplifier output Q 7 10 Qout

GND(V) 11 VCO ground GND(A) 8 9 Qin

VCOA 12 VCO tank circuit A MGE510

VCOB 13 VCO tank circuit B

VCC(V) 14 supply voltage for VCO
Iout 15 I channel amplifier output Fig.2 Pin configuration.
Iin 16 I channel amplifier input

FUNCTIONAL DESCRIPTION The VCO operates at twice the carrier frequency. Its output
signal is applied to a frequency divider (divide-by-2) to
The QPSK modulated RF signal is applied at the input of a
produce the two LO signals which are 90 degrees out of
high gain RF amplifier. The amplified signal is then mixed
phase. The VCO is powered from the internal voltage
in a pair of mixers with two LO signals, which are
stabilizer to ensure good shift performance.
90 degrees out of phase, to produce the in-phase (I) and
quadrature (Q) signals. These two signals are separately
buffered to drive the external low-pass filters used for the
baseband filtering. The I and Q signals are then amplified
by two matched amplifiers designed to avoid crosstalk
between channels.

1996 Oct 08 4
Philips Semiconductors Objective specification

Quadrature demodulator TDA8040T

LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCC(A) supply voltage for I and Q amplifiers −0.3 +6.0 V
VCC(D) supply voltage for demodulator −0.3 +6.0 V
VCC(V) supply voltage for VCO −0.3 +6.0 V
Vn(max) maximum voltage on all pins −0.3 VCC V
Imax maximum sink or source current − 10 mA
tsc(max) maximum short-circuit time on outputs − 10 s
ZL(IQ) AC load impedance for fi = 15 MHz 35 − Ω
I and Q channels
ZLA(IQ) AC load impedance for fi = 15 MHz 300 − Ω
I and Q output amplifiers
VVCO(p-p) voltage drive level for external oscillator − 0.6 V
signal (peak-to-peak value)
Ptot total power dissipation Tamb = 70 °C − 500 mW
Tstg storage temperature −55 +150 °C
Tj junction temperature − 150 °C
Tamb operating ambient temperature 0 70 °C

HANDLING
Inputs and outputs are protected against electrostatic discharge in normal handling. However, to be totally safe, it is
desirable to take normal precautions appropriate to handling MOS devices.

THERMAL CHARACTERISTICS

SYMBOL PARAMETER VALUE UNIT

Rth j-a thermal resistance from junction to ambient in free air 110 K/W

1996 Oct 08 5
Philips Semiconductors Objective specification

Quadrature demodulator TDA8040T

CHARACTERISTICS
VCC(A) = VCC(D) = VCC(V) = 5 V; fi(RF) = 70 MHz; fi(VCO) = 140 MHz; Vi(RF) = 67 dBµV; Tamb = 25 °C;
measured in application circuit of Fig.10; unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Supplies
VCC(A) supply voltage for I and Q channel 4.75 5.0 5.25 V
amplifier
VCC(D) supply voltage for demodulator 4.75 5.0 5.25 V
VCC(V) supply voltage for VCO 4.75 5.0 5.25 V
ICC(A) supply current for I and Q channel note 1 − 29 − mA
amplifier
ICC(D) supply current for demodulator note 1 − 16 − mA
ICC(V) supply current for VCO note 1 − 34 − mA
QPSK demodulator
fi(RF)min minimum input IF frequency − − 10.7 MHz
fi(RF)max maximum input IF frequency 150 − − MHz
Ri(RF) resistive input impedance − 50 − Ω
Xi(RF) reactive input impedance − 5 − Ω
Vi(RF) operating input voltage 64 67 70 dBµV
Ro(IQ) output resistance for I and Q channels 45 50 55 Ω
VolQ(p-p) output voltage for I and Q channels note 2 − 85 − mV
(peak-to-peak value)
Gch(IQ) I and Q channel gain note 3 21 22.5 24 dB
Eφ(IQ) phase error between I and Q channels note 4 − − 3 deg
EG(IQ) gain error between I and Q channels note 4 − − 0.5 dB
EG(tilt) gain tilt error between I and Q channels note 5 − − 0.8 dB
NF double sideband noise figure Zsource = 50 Ω; − 17 20 dB
note 6
IM3 intermodulation distortion in the note 7 45 − − dB
I and Q channels

1996 Oct 08 6
Philips Semiconductors Objective specification

Quadrature demodulator TDA8040T

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Voltage controlled oscillator (VCO)
fiVCO(min) minimum input oscillator frequency − − 21.4 MHz
fiVCO(max) maximum input oscillator frequency 300 − − MHz
∆f frequency deviation − 6 − MHz
∆fdrift frequency drift note 8 − − 100 kHz
∆fshift frequency shift ∆VCC = 5% − − 100 kHz
CNRosc oscillator carrier-to-noise ratio at 10 kHz; − 85 − dBc/Hz
note 9
at 100 kHz; − 105 − dBc/Hz
note 9
Vosc(p-p) required voltage drive level for external 100 − − mV
oscillator injection (peak-to-peak value)
Rsource(osc) source resistance for external oscillator − − 50 Ω
generator
I and Q amplifiers
VilQ(p-p) I and Q channel input voltage note 10 − 0.1 − V
(peak-to-peak value)
VolQ(p-p) I and Q channel output voltage note 10 − 0.5 − V
(peak-to-peak value) at 1 dB gain 1.0 − − V
compression;
note 10
IM3 intermodulation distortion in the note 11 40 − − dB
I and Q channels
BIQ bandwidth of I and Q amplifiers at 0.5 dB 25 − − MHz
αct(IQ) crosstalk between the I and Q channels note 12 30 − − dB
VO(IQ) DC output voltage level for the − 2.45 − V
I and Q amplifier
ZI(IQ) input impedance of the I and Q channels − 10 − kΩ
ZO(IQ) output impedance of the I and Q channels − 50 − Ω
Notes to the characteristics
1. Typical supply currents are defined for VCC = 5 V.
2. The I and Q channel output voltages are measured with the following conditions:
a) fi(RF) = 1⁄2fi(VCO) + 500 kHz (70.5 MHz)
b) the higher frequencies (140.5 MHz) are filtered out.
V IQ ( rms )
3. The I and Q channels gain is defined by G IQ = ------------------------
-.
V iRF ( rms )
The gains are measured with the conditions defined in note 2.

1996 Oct 08 7
Philips Semiconductors Objective specification

Quadrature demodulator TDA8040T

4. The phase and gain error between the I and Q channel outputs is measured as follows:
a) the oscillator is tuned at fi(VCO) = 140 MHz
b) a sine wave signal fi(RF) = 1⁄2fi(VCO) + 500 kHz (70.5 MHz) is applied at the IF input
c) the higher frequencies (140.5 MHz) are filtered out.
Under these conditions, in each I and Q channel, a sine wave with a frequency of 500 kHz will be present.
These sine waves should be 90 degrees out of phase.
The phase error is defined as the phase quadrature imbalance between the I and Q channels.
The gain error is defined as the gain difference between the I and Q channels.
5. The tilt is defined as the difference between the maximum and the minimum channel gain measured in a frequency
band of 25 MHz around fi(RF). The specified tilt is the maximum tilt value found in one of the I or Q channels.
6. The specified noise figure is the maximum value obtained from I and Q channel noise measurement. The noise meter
is tuned to 10.7 MHz.
7. The specified intermodulation distortion is the minimum value obtained from intermodulation measurements in the
I and Q channels. Intermodulation is measured with two sine wave signals at fi(RF) = 79 MHz and fi(RF) = 81 MHz with
an amplitude of 67 dBµV for each tone. The difference in level between the converted carriers (9 MHz and 11 MHz)
and the intermodulation products after frequency conversion (7 MHz and 13 MHz) is defined as IM3 (see Fig.3).
8. The temperature for the VCO frequency drift is defined for ∆Tamb = 25 °C. It is measured in the application circuit of
Fig.10 with the following component values for the tank circuit:
a) L1: 22 nH (TOKO NE545BNA5 - 100082)
b) C1: 15 pF NP0
c) C2: 33 pF N220 (220 ppm/°C)
d) C3 and C4: 1 nF
e) C5: 3.3 µF
f) D1 and D2: BB133
g) R1 and R2: 100 kΩ
h) R3: 1 kΩ.
9. The phase noise is measured at the oscillator frequency (140 MHz). Due to the frequency divider, the phase noise
at the input of the mixers is 6 dB better (111 dBc/Hz at 100 kHz).
10. Output amplifiers are measured separately with an external DC bias applied at pins 9 and 16. The gain is measured
for an output signal of 500 mV (p-p) at fi = 500 kHz.
11. The specified intermodulation distortion is the minimum value obtained from intermodulation measurements in the
I and Q output amplifier. Intermodulation is measured with two sine wave signals at fi = 9 MHz and fi = 11 MHz at an
output level of 500 mV (p-p) for each tone.
12. The crosstalk between the I and Q amplifiers is defined as the ratio between the wanted output signal and the
disturbing signal from the other channel. To measure the crosstalk of the I and Q amplifiers, a sine wave
15 MHz, 0.1 V (p-p) is applied at the I input and a sine wave 15.5 MHz, 0.1 V (p-p) is applied at the Q input. For each
output, the difference in level is measured between the 15 MHz and the 15.5 MHz component. This difference is the
value of the crosstalk between the I and Q amplifiers.

1996 Oct 08 8
Philips Semiconductors Objective specification

Quadrature demodulator TDA8040T

MGE512
handbook, halfpage

IM3

5 7 9 11 13 15
fi (MHz)

Fig.3 IM3 definition.

handbook, halfpage

R2
C3
13

D2
R3
C1 C2 L1 Vvaricap

D1 C5
12

C4
R1

MGE513

Fig.4 Tank circuit.

1996 Oct 08 9
Philips Semiconductors Objective specification

Quadrature demodulator TDA8040T

INPUT PIN CONFIGURATION

1 handbook, halfpageV 1
handbook, halfpage
VCC(A) CC(A)

9,16

10,15

8
GND(A)
MGE514 8
GND(A)
MBE259

Fig.5 Input circuitry VCC(A) to GND(A). Fig.6 Input circuitry VCC(A) to GND(A).

handbook, halfpage 1
handbook, halfpage VCC(A)

12 13

2,7

11 8
GND(V) GND(A)
MGE515 MBE261

Fig.7 Input circuitry VCC(V) to GND(V). Fig.8 Input circuitry VCC(A) to GND(A).

14
handbook, halfpage
VCC(V)

4 5

3
GND(V)
MBE262

Fig.9 Input circuitry VCC(V) to GND(V).

1996 Oct 08 10
Philips Semiconductors Objective specification

Quadrature demodulator TDA8040T

APPLICATION INFORMATION

handbook, full pagewidth

LOW-PASS
FILTER

VCC(A) 1 16 Iin
+5 V

15 Iout
AMP
I 2
AMP
VOLTAGE 14 VCC(V)
GND(D) 3 +5 V
REFERENCE

0 13 VCOB
RF A 4
RFin
RF B 5 AMP ÷2 VCO Vvaricap
12 VCOA
90
VCC(D) 6
+5 V 11 GND(V)

Q 7 10 Qout
AMP AMP

GND(A) 8 9 Qin
TDA8040T

LOW-PASS
FILTER MGE516

Fig.10 Application circuit.

1996 Oct 08 11
Philips Semiconductors Objective specification

Quadrature demodulator TDA8040T

PACKAGE OUTLINE

SO16: plastic small outline package; 16 leads; body width 3.9 mm SOT109-1

D E A
X

y HE v M A

16 9

Q
A2
(A 3) A
A1
pin 1 index
θ
Lp

1 8 L

e w M detail X
bp

0 2.5 5 mm
scale

DIMENSIONS (inch dimensions are derived from the original mm dimensions)

A
UNIT max. A1 A2 A3 bp c D (1) E (1) e HE L Lp Q v w y Z (1) θ

0.25 1.45 0.49 0.25 10.0 4.0 6.2 1.0 0.7 0.7
mm 1.75 0.25 1.27 1.05 0.25 0.25 0.1 o
0.10 1.25 0.36 0.19 9.8 3.8 5.8 0.4 0.6 0.3 8
0.010 0.057 0.019 0.0100 0.39 0.16 0.244 0.039 0.028 0.028 0o
inches 0.069 0.01 0.050 0.041 0.01 0.01 0.004
0.004 0.049 0.014 0.0075 0.38 0.15 0.228 0.016 0.020 0.012

Note
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.

OUTLINE REFERENCES EUROPEAN

ISSUE DATE
VERSION IEC JEDEC EIAJ PROJECTION

95-01-23
SOT109-1 076E07S MS-012AC
97-05-22

1996 Oct 08 12
Philips Semiconductors Objective specification

Quadrature demodulator TDA8040T

SOLDERING Wave soldering

Introduction Wave soldering techniques can be used for all SO
packages if the following conditions are observed:
There is no soldering method that is ideal for all IC
packages. Wave soldering is often preferred when • A double-wave (a turbulent wave with high upward
through-hole and surface mounted components are mixed pressure followed by a smooth laminar wave) soldering
on one printed-circuit board. However, wave soldering is technique should be used.
not always suitable for surface mounted ICs, or for • The longitudinal axis of the package footprint must be
printed-circuits with high population densities. In these parallel to the solder flow.
situations reflow soldering is often used. • The package footprint must incorporate solder thieves at
This text gives a very brief insight to a complex technology. the downstream end.
A more in-depth account of soldering ICs can be found in During placement and before soldering, the package must
our “IC Package Databook” (order code 9398 652 90011). be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
Reflow soldering dispensing. The package can be soldered after the
Reflow soldering techniques are suitable for all SO adhesive is cured.
packages. Maximum permissible solder temperature is 260 °C, and
Reflow soldering requires solder paste (a suspension of maximum duration of package immersion in solder is
fine solder particles, flux and binding agent) to be applied 10 seconds, if cooled to less than 150 °C within
to the printed-circuit board by screen printing, stencilling or 6 seconds. Typical dwell time is 4 seconds at 250 °C.
pressure-syringe dispensing before package placement. A mildly-activated flux will eliminate the need for removal
Several techniques exist for reflowing; for example, of corrosive residues in most applications.
thermal conduction by heated belt. Dwell times vary
between 50 and 300 seconds depending on heating Repairing soldered joints
method. Typical reflow temperatures range from Fix the component by first soldering two diagonally-
215 to 250 °C. opposite end leads. Use only a low voltage soldering iron
Preheating is necessary to dry the paste and evaporate (less than 24 V) applied to the flat part of the lead. Contact
the binding agent. Preheating duration: 45 minutes at time must be limited to 10 seconds at up to 300 °C. When
45 °C. using a dedicated tool, all other leads can be soldered in
one operation within 2 to 5 seconds between
270 and 320 °C.

1996 Oct 08 13
Philips Semiconductors Objective specification

Quadrature demodulator TDA8040T

DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

1996 Oct 08 14
Philips Semiconductors Objective specification

Quadrature demodulator TDA8040T

NOTES

1996 Oct 08 15
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© Philips Electronics N.V. 1996 SCA52

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Printed in The Netherlands 537021/50/02/pp16 Date of release: 1996 Oct 08 Document order number: 9397 750 01345
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