TL431MJG
TL431MJG
CATHODE
ANODE ANODE
REF
NC
NC
NC
REF
3 2 1 20 19
NC 4 18 NC
NC 5 17 NC
NC 6 16 NC
NC 7 15 ANODE
NC 8 14 NC
9 10 11 12 13
NC
NC
NC
NC
NC
NC – No internal connection
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date. Copyright 1998, Texas Instruments Incorporated
Products conform to specifications per the terms of Texas Instruments On products compliant to MIL-PRF-38535, all parameters are tested
standard warranty. Production processing does not necessarily include unless otherwise noted. On all other products, production
testing of all parameters. processing does not necessarily include testing of all parameters.
AVAILABLE OPTIONS
PACKAGED DEVICES
PLASTIC SHRINK CHIP
TA SMALL CHIP CERAMIC PLASTIC FORM
FLANGE TO-226AA SOT-89 SMALL
OUTLINE CARRIER DIP DIP (Y)
MOUNT (LP) (PK) OUTLINE
(D) (FK) (JG) (P)
(KTP) (PW)
0°C
TL431CD TL431CLP TL431CP
to TL431CKTPR TL431CPK TL431CPW
TL431ACD TL431ACLP TL431ACP
70°C
–40°C
TL431ID TL431ILP TL431IP
to TL431IPK TL431Y
TL431AID TL431AILP TL431AIP
85°C
–55°C
to TL431MFK TL431MJG
125°C
The D and LP packages are available taped and reeled. Add R suffix to device type (e.g., TL431CDR). The KTP and PK packages are only available
taped and reeled. Chip forms are tested at TA = 25°C.
symbol
REF
ANODE CATHODE
REF +
_
Vref
ANODE
equivalent schematic†
CATHODE
800 Ω 800 Ω
20 pF
REF
150 Ω
3.28 kΩ
4 kΩ 10 kΩ
2.4 kΩ 7.2 kΩ 20 pF
1 kΩ
800 Ω
ANODE
† All component values are nominal.
(1)
(1)
CATHODE
(3)
(2) TL431Y REF
ANODE
41
51
absolute maximum ratings over operating free-air temperature range (unless otherwise noted)†
Cathode voltage, VKA (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37 V
Continuous cathode current range, IKA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –100 mA to 150 mA
Reference input current range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –50 µA to 10 mA
Continuous total power dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . See Dissipation Rating Tables 1 and 2
Storage temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65°C to 150°C
Case temperature for 60 seconds: FK package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds: D, P, or PW package . . . . . . . . . . . . 260°C
Lead temperature 1,6 mm (1/16 inch) from case for 60 seconds: JG, LP, or PK package . . . . . . . . . . 300°C
† Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTE 1: Voltage values are with respect to the anode terminal unless otherwise noted.
The deviation parameters Vref(dev) and Iref(dev) are defined as the differences between the maximum and minimum
values obtained over the recommended temperature range. The average full-range temperature coefficient of the
reference voltage, αVref, is defined as:
Ťa Ť ǒ Ǔ+
ppm
ǒ Ǔ V
I(dev)
V at 25°C
ref
10 6
Maximum Vref
VI(dev)
Vref
°C DTA Minimum Vref
∆TA
where:
∆TA is the recommended operating free-air temperature range of the device.
αVref can be positive or negative, depending on whether minimum Vref or maximum Vref, respectively, occurs at the
lower temperature.
Example: maximum Vref = 2496 mV at 30°C, minimum Vref = 2492 mV at 0°C, Vref = 2495 mV at 25°C,
∆TA = 70°C for TL431C
Ťa Ť + ǒ Ǔ [ 23 ppmń°C
4 mV
2495 mV
10 6
Vref
70°C
Because minimum Vref occurs at the lower temperature, the coefficient is positive.
Calculating Dynamic Impedance
The dynamic impedance is defined as: |z KA| + DDVI KA
KA
When the device is operating with two external resistors (see Figure 3), the total dynamic impedance of the circuit
is given by:
|z | Ȁ+ [
DV |zKA| 1 R1
DI R2
ǒ) Ǔ
Figure 1. Calculating Deviation Parameters and Dynamic Impedance
Ȁ + ∆V
|z |
∆I
[ |z KA
ǒ) Ǔ
When the device is operating with two external resistors (see Figure 3), the total dynamic impedance of the circuit is given by:
| 1 R1
R2
R1 Iref
Vref R2 Vref
V KA +V ǒ ) Ǔ)
ref 1 R1
R2
I ref R1
Figure 2. Test Circuit for VKA = Vref Figure 3. Test Circuit for VKA > Vref
Input VKA
Ioff
TYPICAL CHARACTERISTICS
Table 1. Graphs
FIGURE
Reference input voltage vs Free-air temperature 5
Reference input current vs Free-air temperature 6
Cathode current vs Cathode voltage 7, 8
Off-state cathode current vs Free-air temperature 9
Ratio of delta reference voltage to change in cathode voltage vs Free-air temperature 10
Equivalent input noise voltage vs Frequency 11
Equivalent input noise voltage over a 10-second period 12
Small-signal voltage amplification vs Frequency 13
Reference impedance vs Frequency 14
Pulse response 15
Stability boundary conditions 16
TYPICAL CHARACTERISTICS
2560
4
2520 3
Vref = 2495 mV‡
2500
2480
2
2460
2420
2400 0
–75 –50 –25 0 25 50 75 100 125
–75 –50 –25 0 25 50 75 100 125
TA – Free-Air Temperature – °C TA – Free-Air Temperature – °C
† Data is applicable only within the recommended operating free-air † Data is applicable only within the recommended operating free-air
temperature ranges of the various devices. temperature ranges of the various devices.
‡ Data is for devices having the indicated value of Vref at IKA = 10 mA,
TA = 25°C.
Figure 5 Figure 6
100 600
I KA – Cathode Current – mA
I KA – Cathode Current – µ A
75 Imin
50 400
25
0 200
–25
–50 0
–75
–100 –200
–2 –1 0 1 2 3 –1 0 1 2 3
VKA – Cathode Voltage – V VKA – Cathode Voltage – V
Figure 7 Figure 8
TYPICAL CHARACTERISTICS
– 0.95
2
∆V ref / ∆V KA – mV/V
–1.05
1.5
–1.15
1
–1.25
0.5
–1.35
0 –1.45
–75 –50 –25 0 25 50 75 100 125 –75 –50 –25 0 25 50 75 100 125
TA – Free-Air Temperature – °C TA – Free-Air Temperature – °C
† Data is applicable only within the recommended operating free-air † Data is applicable only within the recommended operating free-air
temperature ranges of the various devices. temperature ranges of the various devices.
Figure 9 Figure 10
IO = 10 mA
240 TA = 25°C
220
200
180
160
140
120
100
10 100 1k 10 k 100 k
f – Frequency – Hz
Figure 11
TYPICAL CHARACTERISTICS
EQUIVALENT INPUT NOISE VOLTAGE
OVER A 10-SECOND PERIOD
6
5
0
–1
–2
–3
–4 f = 0.1 to 10 Hz
IKA = 10 mA
–5
TA = 25°C
–6
0 1 2 3 4 5 6 7 8 9 10
t – Time – s
19.1 V
1 kΩ
500 µF 910 Ω
2000 µF
VCC VCC To Oscilloscope
1 µF
TL431
(DUT) TLE2027
AV = 10 V/mV
+ 22 µF
TLE2027
820 Ω +
– 16 kΩ 16 kΩ
16 Ω –
160 kΩ
1 µF 33 kΩ
AV = 2 V/V
0.1 µF
33 kΩ
VEE VEE
TYPICAL CHARACTERISTICS
SMALL-SIGNAL VOLTAGE AMPLIFICATION
vs
FREQUENCY
60
IKA = 10 mA
A V – Small-Signal Voltage Amplification – dB
TA = 25°C
50 Output
IKA
15 kΩ 232 Ω
40
9 µF
+
30
–
8.25 kΩ
20 GND
0
1k 10 k 100 k 1M 10 M
f – Frequency – Hz
Figure 13
REFERENCE IMPEDANCE
vs
FREQUENCY
100
IKA = 10 mA
TA = 25°C
|z KA | – Reference Impedance – Ω
1 kΩ
Output
10 IKA
50 Ω
–
+
GND
1
0.1
1k 10 k 100 k 1M 10 M
f – Frequency – Hz
Figure 14
TYPICAL CHARACTERISTICS
PULSE RESPONSE
6
TA = 25°C
Input
5
220 Ω
Input and Output Voltage – V
Output
4
Pulse
Generator 50 Ω
3 f = 100 kHz
Output
GND
2
0
–1 0 1 2 3 4 5 6 7
t – Time – µs
Figure 15
B –
70
Stable
60
Stable C
50
A TEST CIRCUIT FOR CURVE A
40
30
D IKA
20 R1 = 10 kΩ 150 Ω
10
CL
0 +
0.001 0.01 0.1 1 10 R2 VBATT
CL – Load Capacitance – µF –
† The areas under the curves represent conditions that may cause the
device to oscillate. For curves B, C, and D, R2 and V+ were adjusted
to establish the initial VKA and IKA conditions with CL = 0. VBATT and
CL were then adjusted to determine the ranges of stability. TEST CIRCUIT FOR CURVES B, C, AND D
Figure 16
APPLICATION INFORMATION
R
(see Note A)
VI(BATT) VO
R1
ǒ Ǔ
0.1%
Vref TL431 VO + 1 ) R1
R2
V ref
R2
0.1%
RETURN
NOTE A: R should provide cathode current ≥1 mA to the TL431 at minimum VI(BATT).
VI(BATT)
VO
TL431
Von ≈ 2 V
Input Voff ≈ VI(BATT)
VIT ≈ 2.5 V
GND
VI(BATT)
R
(see Note A) 2N222
2N222
ǒ Ǔ
30 Ω
VO + 1 ) R1
R2
V ref
0.01 µF 4.7 kΩ
TL431 VO
R1
R2
0.1%
0.1%
APPLICATION INFORMATION
VI(BATT)
IN
OUT
ǒ Ǔ
uA7805 VO
Common R1 VO + 1 ) R1
R2
V ref
TL431 Minimum V + V ) 5 V
O ref
R2
VI(BATT) VO
R1
VO ǒ Ǔ
+ 1 ) R1
R2
V ref
R2 TL431
VI(BATT) VO
R1
TL431
C
(see Note A)
R2
NOTE A: Refer to the stability boundary conditions in Figure 16 to determine allowable values for C.
APPLICATION INFORMATION
IN OUT
VI(BATT) LM317 VO ≈ 5 V, 1.5 A
8.2 kΩ Adjust
243 Ω
0.1%
TL431
243 Ω
0.1%
VI(BATT) VO ≈ 5 V
Rb
(see Note A) 27.4 kΩ
0.1%
TL431
27.4 kΩ
0.1%
12 V
VCC
6.8 kΩ
5V 10 kΩ
–
10 kΩ
+
0.1% TL598
X
TL431 Not
10 kΩ Used
0.1%
Feedback
APPLICATION INFORMATION
R3
(see Note A)
VI(BATT)
R1A R1B
R4
+ 1 ) R1B ǒ Ǔ
ǒ Ǔ
(see Note A)
Low Limit V ref
R2B
High Limit + 1 ) R1A V
TL431
R2A ref
NOTE A: R3 and R4 are selected to provide the desired LED intensity and cathode current ≥1 mA to the TL431 at the available VI(BATT).
650 Ω
12 V
R 2 kΩ
TL431
Delay +R C In ǒ 12 V
12 V V ref * Ǔ
On C
Off
RCL IO
+ RV ) I
0.1%
VI(BATT) ref
I out KA
CL
R1
R1 + V I(BATT)
TL431 O
h FE
I
)I KA
APPLICATION INFORMATION
VI(BATT)
IO
IO + VR
ref
S
TL431
RS
0.1%
Texas Instruments and its subsidiaries (TI) reserve the right to make changes to their products or to discontinue
any product or service without notice, and advise customers to obtain the latest version of relevant information
to verify, before placing orders, that information being relied on is current and complete. All products are sold
subject to the terms and conditions of sale supplied at the time of order acknowledgement, including those
pertaining to warranty, patent infringement, and limitation of liability.
TI warrants performance of its semiconductor products to the specifications applicable at the time of sale in
accordance with TI’s standard warranty. Testing and other quality control techniques are utilized to the extent
TI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily
performed, except those mandated by government requirements.
In order to minimize risks associated with the customer’s applications, adequate design and operating
safeguards must be provided by the customer to minimize inherent or procedural hazards.
TI assumes no liability for applications assistance or customer product design. TI does not warrant or represent
that any license, either express or implied, is granted under any patent right, copyright, mask work right, or other
intellectual property right of TI covering or relating to any combination, machine, or process in which such
semiconductor products or services might be or are used. TI’s publication of information regarding any third
party’s products or services does not constitute TI’s approval, warranty or endorsement thereof.