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BR 8050

The document provides specifications for the NPN transistor model 8050, which has a maximum collector current of 1.5A and various electrical characteristics at a temperature of 25°C. Key parameters include breakdown voltages, leakage currents, saturation voltages, and current gain classifications. The document also lists the manufacturer's contact information.

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Luiz Eduardo
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103 views1 page

BR 8050

The document provides specifications for the NPN transistor model 8050, which has a maximum collector current of 1.5A and various electrical characteristics at a temperature of 25°C. Key parameters include breakdown voltages, leakage currents, saturation voltages, and current gain classifications. The document also lists the manufacturer's contact information.

Uploaded by

Luiz Eduardo
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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NPN TRANSISTOR 8050

1.5A

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ta=25

PARAMETERS SYMBOL MIN TYP MAX UNIT CONDITION


Collector-Emitter Breakdown Voltage BVceo V Ic=0.1mA
Collector-Base Breakdown Voltage BVcbo 45 V Ic=100 A
Emitter-Base Breakdown Voltage BVebo V Ie=100 A
Collector-Base Leakage Icbo 0.1 uA Vcb=40V
Collector-Emitter Leakage Iceo 0.1 uA Vce=20V
Emitter-Base Leakage Iebo 0.1 uA Veb=5V
Collector-Emitter Saturation Voltage Vce(sat 0.6 V Ic=1500mA, Ib=50mA
Base-Emiiter Saturation Voltage Vbe(sat) 1.2 V Ic=1500mA, Ib=50mA
DC Current Gain Hfe1 85 Vce=1V,Ic=50mA
Hfe2 50 Vce=1V,Ic=500mA
Collector Current Ic 1.5 A
Peak Collector Current Icp 8 A(Pulse)
Current Gain Bandwidth fT MHz Vcb=6V, Ic=20mA
Output Capacitance Cob 32 pF Vcb=20V,Ie=0,f=1MHz
Power Dissipation Pc 1.0 W
Junction Temperature Tj 150
Storage Temperature Tstg -55 150

Hfe1 Classification
Rank B C D
Range 85-160 120-200 160-300

STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
TEL: (650) 9389294 FAX: (650) 9389295

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