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Nte 348

The NTE348 is a silicon NPN transistor designed for use in 12.5V VHF power amplifiers up to 300MHz. It has a minimum gain of 12dB, output power of 4W, and 50% efficiency. Its maximum ratings include collector-emitter voltage of 18V, collector-emitter surge voltage of 36V, and continuous collector current of 1A. Functional tests show a common-emitter power gain of 12dB at 175MHz when operated at its rated 12.5V.

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55 views2 pages

Nte 348

The NTE348 is a silicon NPN transistor designed for use in 12.5V VHF power amplifiers up to 300MHz. It has a minimum gain of 12dB, output power of 4W, and 50% efficiency. Its maximum ratings include collector-emitter voltage of 18V, collector-emitter surge voltage of 36V, and continuous collector current of 1A. Functional tests show a common-emitter power gain of 12dB at 175MHz when operated at its rated 12.5V.

Uploaded by

Luis Alfredo
Copyright
© Attribution Non-Commercial (BY-NC)
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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NTE348 Silicon NPN Transistor RF Power Amp, Driver

Description: The NTE348 is a silicon NPN transistor in a T72H type package designed primarily for use in 12.5V VHF largesignal power amplifier applications required in military and industrial equipment to 300MHz. Features: D Specified 12.5V, 175MHz Characteristics: Output Power = 4W Minimum Gain = 12dB Efficiency = 50% Absolute Maximum Ratings: CollectorEmitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18V CollectorEmitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V EmitterBase Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A Total Device Dissipation (Note 1, TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 68.5mW/C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +200C Note 1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier. Electrical Characteristics: (TC = +25C unless otherwise specified)
Parameter OFF Characteristics CollectorEmitter Breakdown Voltage V(BR)CEO IC = 10mA, IB = 0 V(BR)CES IC = 5mA, VBE = 0 EmitterBase Breakdown Voltage Collector Cutoff Current V(BR)EBO IE = 1mA, IC = 0 ICBO ICES ON Characteristics DC Current Gain hFE IC = 250mA, VCE = 5V 5 VCB = 15V, IE = 0 VCE = 15V, VBE = 0, TC = +55C 18 36 4 0.25 5 V V V mA mA Symbol Test Conditions Min Typ Max Unit

Electrical Characteristics (Contd): (TC = +25C unless otherwise specified)


Parameter Dynamic Characteristics Output Capacitance Cob GPE VCB = 15V, IE = 0, f = 0.1MHz Pout = 4W, f = 175MHz 15 20 pF Symbol Test Conditions Min Typ Max Unit

Functional Tests (VCC = 12.5V unless otherwise specified) CommonEmitter Amplifier Power Gain 12 dB

1.040 (26.4) Max .520 (13.2)

.230 (5.84)

.100 (2.54)

.385 (9.8) Dia

.005 (0.15)

.168 (4.27) 832NC3A .750 (19.05)

Wrench Flat

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