VND05B

® / VND05B (011Y) / VND05B (012Y)

DOUBLE CHANNEL
HIGH SIDE SMART POWER SOLID STATE RELAY
TYPE VDSS RDS(on) In (*) VCC
VND05B
VND05B (011Y) 40V 200mΩ 1.6A 26 V
VND05B (012Y)

■ OUTPUT CURRENT (CONTINUOUS): 9A AT

Tc=85°C PER CHANNEL
HEPTAWATT HEPTAWATT
■ 5V LOGIC LEVEL COMPATIBLE INPUT
(vertical) (horizontal)
■ THERMAL SHUT-DOWN
■ UNDERVOLTAGE PROTECTION

■ OPEN DRAIN DIAGNOSTIC OUTPUT

■ INDUCTIVE LOAD FAST DEMAGNETIZATION HEPTAWATT

■ VERY LOW STAND-BY POWER DISSIPATION (in-line)

DESCRIPTION
The VND05B, VND05B (011Y), VND05B (012Y) is ORDER CODES
a monolithic device designed in HEPTAWATT vertical VND05B
STMicroelectronics VIPower technology, intended HEPTAWATT horizontal VND05B (011Y)
for driving resistive or inductive loads with one HEPTAWATT in-line VND05B (012Y)
side connected to ground. This device has two
channels, and a common diagnostic. Built-in
thermal shutdown protects the chip from
overtemperature and short circuit. The status
output provides an indication of open load in on
state, open load in off state, overtemperature
conditions and stuck-on to VCC.

BLOCK DIAGRAM

(*) In= Nominal current according to ISO definition for high side automotive switch (see note 1)

November 1999 1/11

1
VND05B / VND05B (011Y) / VND05B (012Y)

ABSOLUTE MAXIMUM RATING

Symbol Parameter Value Unit
V(BR)DSS Drain-Source breakdown voltage 40 V
IOUT Output current (continuous) at Tc=85°C 9 A
IOUT (RMS) RMS Output current at Tc=85°C and f > 1Hz 9 A
IR Reverse output current at Tc=85°C -9 A
IIN Input current +/- 10 mA
-VCC Reverse supply voltage -4 V
ISTAT Status current +/- 10 mA
VESD Electrostatic discharge (R=1.5kΩ, C=100pF) 2000 V
PTOT Power dissipation at Tc=25°C 59 W
Tj Junction operating temperature -40 to 150 °C
TSTG Storage temperature -55 to 150 °C

CONNECTION DIAGRAM TOP VIEW

CURRENT AND VOLTAGE CONVENTIONS

2/11

1
 VND05B / VND05B (011Y) / VND05B (012Y)

THERMAL DATA
Symbol Parameter Value Unit
Rthj-case Thermal resistance junction-case (MAX) 2.1 °C/W
Rthj-amb Thermal resistance junction-ambient (MAX) 60 °C/W

ELECTRICAL CHARACTERISTICS (8V<VCC<16V; -40°C≤Tj≤125°C; unless otherwise specified)

POWER
Symbol Parameter Test Conditions Min Typ Max Unit
VCC Supply voltage 6 13 26 V
In (*) Nominal current Tc=85°C; VDS(on)≤0.5V; VCC=13V 1.6 2.6 A
RON On state resistance IOUT=In; VCC=13V; Tj=25°C 0.13 0.2 Ω
IS Supply current Off state; Tj=25°C; VCC=13V 35 100 µA
VDS(MAX) Maximum voltage Drop IOUT=7.5A; Tj=85°C; VCC=13V 1.44 2.3 V
Output to GND internal
Ri Tj=25°C 5 10 20 KΩ
impedance

SWITCHING
Symbol Parameter Test Conditions Min Typ Max Unit
Turn-on delay time of
td(on) (^) ROUT =5.4Ω 5 25 200 µs
output current
tr (^) Rise time of output current ROUT =5.4Ω 10 50 180 µs
Turn-off delay time of
td(off) (^) ROUT =5.4Ω 10 75 250 µs
output current
tf (^) Fall time of output current ROUT =5.4Ω 10 35 180 µs
(di/dt)on Turn-on current slope ROUT =5.4Ω 0.003 0.1 A/µs
(di/dt)off Turn-off current slope ROUT =5.4Ω 0.005 0.1 A/µs

LOGIC INPUT
Symbol Parameter Test Conditions Min Typ Max Unit
VIL Input low level voltage 1.5 V
VIH Input high level voltage 3.5 (•) V
VI(hyst) Input hysteresis voltage 0.2 0.9 1.5 V
IIN Input current VIN=5V; Tj=25°C 30 100 µA
IIN=10mA 5 6 7 V
VICL Input clamp voltage
IIN=-10mA -0.7 V

3/11

1
VND05B / VND05B (011Y) / VND05B (012Y)

ELECTRICAL CHARACTERISTICS (continued)

PROTECTIONS AND DIAGNOSTICS
Symbol Parameter Test Conditions Min Typ Max Unit
VSTAT Low output voltage status ISTAT=1.6mA 0.4 V
VUSD Undervoltage shut-down 3.5 4.5 6 V
Status clamp voltage ISTAT= 10mA 5 6 7 V
VSCL
ISTAT= -10mA -0.7 V
Thermal shut-down
TTSD 140 160 180 °C
temperature
Thermal shutdown
TTSD(hyst) 50 °C
hysteresis temperature
TR Reset temperature 125 °C
VOL Open voltage level Off state (note 2) 2.5 4 5 V
IOL Open load current level On state 5 180 mA
Overtemperature Status
tpovl (note 3) 5 10 µs
delay
tpol Open Load Status delay (note 3) 50 500 2500 µs

(*) I n=Nominal current according to ISO definition for high side automotive switch (see note 1)
(^) See switching time waveform
(•) The VIH is internally clamped at 6V about. It is possible to connect this pin to an higher voltage via an external resistor calculated to not
exceed 10 mA at the input pin.
Note 1: The Nominal Current is the current at Tc=85°C for battery voltage of 13V which produces a voltage drop of 0.5V
Note 2: IOL(off) = (VCC-VOL)/ROL
Note 3: tpovl tpol: ISO definition

Note 2 Relevant Figure Note 3 Relevant Figure

4/11

2
 VND05B / VND05B (011Y) / VND05B (012Y)

Switching Time Waveforms

FUNCTIONAL DESCRIPTION The maximum inductance which causes the chip

The device has a common diagnostic output for temperature to reach the shutdown temperature in
both channels which indicates open load in on- a specified thermal environment is a function of
state, open load in off-state, overtemperature the load current for a fixed VCC, Vdemag and f
conditions and stuck-on to VCC. according to the above formula. In this device if the
GND pin is disconnected, with VCC not exceeding
From the falling edge of the input signal, the status
16V, both channels will switch off.
output, initially low to signal a fault condition
(overtemperature or open load on-state), will go
back to a high state with a different delay in case of PROTECTING THE DEVICE AGAINST
overtemperature (tpovl) and in case of open load REVERSE BATTERY
(tpol) respectively. This feature allows to
The simplest way to protect the device against a
discriminate the nature of the detected fault. To
continuous reverse battery voltage (-26V) is to
protect the device against short-circuit and
insert a Schottky diode between pin 2 (GND) and
overcurrent condition, the thermal protection turns
ground, as shown in the typical application circuit
the integrated PowerMOS off at a minimum
(fig. 2).
junction temperature of 140 °C. When this
temperature returns to 125 °C the switch is The consequences of the voltage drop across this
automatically turned in again. In short-circuit the diode are as follows:
protection reacts with virtually no delay, the sensor - If the input is pulled to power GND, a negative
(one for each channel) being located inside each voltage of -Vf is seen by the device. (V il, Vih
of the two PowerMOS areas. This positioning thresholds and VSTAT are increased by Vf with
allows the device to operate with one channel in respect to power GND).
automatic thermal cycling and the other one on a
- The undervoltage shutdown level is increased by
normal load. An internal function of the devices
Vf.
ensures the fast demagnetization of inductive
loads with a typical voltage (Vdemag) of -18V. This If there is no need for the control unit to handle
function allows to greatly reduce the power external analog signals referred to the power
dissipation according to the formula: GND, the best approach is to connect the
reference potential of the control unit to the device
Pdem= 0.5•Lload•(Iload)2•[(VCC+Vdemag)/Vdemag]•f
ground (see application circuit in fig. 3), which
where f= switching frequency and becomes the common signal GND for the whole
Vdemag = demagnetization voltage. control board avoiding shift on Vil, Vih and VSTAT.
This solution allows the use of a standard diode.

5/11
VND05B / VND05B (011Y) / VND05B (012Y)

THRUTH TABLE
INPUT 1 INPUT 2 OUTPUT 1 OUTPUT 2 DIAGNOSTIC
L L L L H
H H H H H
Normal operation
L H L H H
H L H L H
Undervoltage X X L L H
Channel 1 H X L X L
Thermal shutdown
Channel 2 X H X L L
H X H X L
Channel 1
L L L L L
Openload
X H X H L
Channel 2
L L L L L
H X H X L
Channel 1
L L H L L
Output shorted to VCC
X H X H L
Channel 2
L L L H L

Figure: 1: Waveforms

6/11

1
 VND05B / VND05B (011Y) / VND05B (012Y)

Figure 2: Typical application circuit with a Schottky diode for reverse supply protection

Figure 3: Typical application circuit with separate signal ground

7/11

2
VND05B / VND05B (011Y) / VND05B (012Y)

HEPTAWATT (horizontal) MECHANICAL DATA

mm. inch
DIM.
MIN. TYP MAX. MIN. TYP. MAX.
A 4.8 0.189
C 1.37 0.054
D 2.4 2.8 0.094 0.110
D1 1.2 1.35 0.047 0.053
E 0.35 0.55 0.014 0.022
F 0.6 0.8 0.024 0.031
F1 0.9 0.035
G 2.41 2.54 2.67 0.095 0.100 0.105
G1 4.91 5.08 5.21 0.193 0.200 0.205
G2 7.49 7.62 7.8 0.295 0.300 0.307
H2 10.4 0.409
H3 10.05 10.4 0.396 0.409
L 14.2 0.559
L1 4.4 0.173
L2 15.8 0.622
L3 5.1 0.201
L5 2.6 3 0.102 0.118
L6 15.1 15.8 0.594 0.622
L7 6 6.6 0.236 0.260
L9 4.44 0.175
Dia 3.65 3.85 0.144 0.152

8/11

1
 VND05B / VND05B (011Y) / VND05B (012Y)

HEPTAWATT (vertical) MECHANICAL DATA

mm. inch
DIM.
MIN. TYP MAX. MIN. TYP. MAX.
A 4.8 0.189
C 1.37 0.054
D 2.4 2.8 0.094 0.110
D1 1.2 1.35 0.047 0.053
E 0.35 0.55 0.014 0.022
F 0.6 0.8 0.024 0.031
F1 0.9 0.035
G 2.41 2.54 2.67 0.095 0.100 0.105
G1 4.91 5.08 5.21 0.193 0.200 0.205
G2 7.49 7.62 7.8 0.295 0.300 0.307
H2 10.4 0.409
H3 10.05 10.4 0.396 0.409
L 16.97 0.668
L1 14.92 0.587
L2 21.54 0.848
L3 22.62 0.891
L5 2.6 3 0.102 0.118
L6 15.1 15.8 0.594 0.622
L7 6 6.6 0.236 0.260
M 2.8 0.110
M1 5.08 0.200

9/11

1 1
VND05B / VND05B (011Y) / VND05B (012Y)

HEPTAWATT (in-line) MECHANICAL DATA

mm. inch
DIM.
MIN. TYP MAX. MIN. TYP. MAX.
A 4.8 0.189
C 1.37 0.054
D 2.4 2.8 0.094 0.110
D1 1.2 1.35 0.047 0.053
E 0.35 0.55 0.014 0.022
F 0.6 0.8 0.024 0.031
F1 0.9 0.035
G 2.41 2.54 2.67 0.095 0.100 0.105
G1 4.91 5.08 5.21 0.193 0.200 0.205
G2 7.49 7.62 7.8 0.295 0.300 0.307
H2 10.4 0.409
H3 10.05 10.4 0.396 0.409
L2 22.4 22.9 0.882 0.902
L3 25.4 26 1.000 1.024
L5 2.6 3 0.102 0.118
L6 15.1 15.8 0.594 0.622
L7 6 6.6 0.236 0.260
Dia. 3.65 3.85 0.144 0.152

10/11

1
 VND05B / VND05B (011Y) / VND05B (012Y)

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics

 1999 STMicroelectronics - Printed in ITALY- All Rights Reserved.

STMicroelectronics GROUP OF COMPANIES

Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco -
The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.

http://www.st.com

11/11

1
This datasheet has been download from:

www.datasheetcatalog.com

Datasheets for electronics components.