NTD20N03L27, NVD20N03L27

Power MOSFET
20 A, 30 V, N−Channel DPAK
This logic level vertical power MOSFET is a general purpose part
that provides the “best of design” available today in a low cost power
package. Avalanche energy issues make this part an ideal design in.
The drain−to−source diode has a ideal fast but soft recovery.
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Features
• Ultra−Low RDS(on), Single Base, Advanced Technology 20 A, 30 V, RDS(on) = 27 mW
• SPICE Parameters Available
• Diode is Characterized for use in Bridge Circuits N−Channel

• IDSS and VDS(on) Specified at Elevated Temperatures D

• High Avalanche Energy Specified

• ESD JEDAC rated HBM Class 1, MM Class A, CDM Class 0
• NVD Prefix for Automotive and Other Applications Requiring G
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
S
• These Devices are Pb−Free and are RoHS Compliant
Typical Applications 4
• Power Supplies
• Inductive Loads 1 2
3
• PWM Motor Controls DPAK
• Replaces MTD20N03L in many Applications CASE 369C
STYLE 2
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating Symbol Value Unit
MARKING DIAGRAM
Drain−to−Source Voltage VDSS 30 Vdc
& PIN ASSIGNMENTS
Drain−to−Gate Voltage (RGS = 1.0 MW) VDGR 30 Vdc
4
Gate−to−Source Voltage Vdc
− Continuous VGS ±20 Drain
− Non−Repetitive (tpv10 ms) VGS ±24
AYWW

Drain Current
N3LG

− Continuous @ TA = 25_C ID 20 Adc

20

− Continuous @ TA = 100_C ID 16
− Single Pulse (tpv10 ms) IDM 60 Apk
Total Power Dissipation @ TA = 25_C PD 74 W 2
1 3
Derate above 25°C 0.6 W/°CW Drain
Total Power Dissipation @ TC = 25°C (Note 1) 1.75 Gate Source

Operating and Storage Temperature Range TJ, Tstg −55 to °C A = Assembly Location*
150
20N3L = Device Code
Single Pulse Drain−to−Source Avalanche EAS 288 mJ Y = Year
Energy − Starting TJ = 25°C WW = Work Week
(VDD = 30 Vdc, VGS = 5 Vdc, L = 1.0 mH, G = Pb−Free Package
IL(pk) = 24 A, VDS = 34 Vdc)
Thermal Resistance °C/W * The Assembly Location code (A) is front side
− Junction−to−Case RqJC 1.67 optional. In cases where the Assembly Location is
− Junction−to−Ambient RqJA 100 stamped in the package, the front side assembly
− Junction−to−Ambient (Note 1) RqJA 71.4 code may be blank.
Maximum Lead Temperature for Soldering TL 260 °C
Purposes, 1/8″ from case for 10 seconds
ORDERING INFORMATION
Stresses exceeding those listed in the Maximum Ratings table may damage the See detailed ordering and shipping information in the package
device. If any of these limits are exceeded, device functionality should not be dimensions section on page 2 of this data sheet.
assumed, damage may occur and reliability may be affected.
1. When surface mounted to an FR4 board using the minimum recommended
pad size and repetitive rating; pulse width limited by maximum junction
temperature.

© Semiconductor Components Industries, LLC, 2014 1 Publication Order Number:

September, 2014 − Rev. 6 NTD20N03L27/D
 NTD20N03L27, NVD20N03L27

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage (Note 2) V(BR)DSS Vdc
(VGS = 0 Vdc, ID = 250 mAdc) 30 − −
Temperature Coefficient (Positive) − 43 − mV/°C
Zero Gate Voltage Drain Current IDSS mAdc
(VDS = 30 Vdc, VGS = 0 Vdc) − − 10
(VDS = 30 Vdc, VGS = 0 Vdc, TJ =150°C) − − 100
Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc) IGSS − − ±100 nAdc
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage (Note 2) VGS(th) Vdc
(VDS = VGS, ID = 250 mAdc) 1.0 1.6 2.0
Threshold Temperature Coefficient (Negative) − 5.0 − mV/°C
Static Drain−to−Source On−Resistance (Note 2) RDS(on) mW
(VGS = 4.0 Vdc, ID = 10 Adc) − 28 31
(VGS = 5.0 Vdc, ID = 10 Adc) − 23 27
Static Drain−to−Source On−Voltage (Note 2) VDS(on) Vdc
(VGS = 5.0 Vdc, ID = 20 Adc) − 0.48 0.54
(VGS = 5.0 Vdc, ID = 10 Adc, TJ = 150°C) − 0.40 −
Forward Transconductance (Note 2) (VDS = 5.0 Vdc, ID = 10 Adc) gFS − 21 − mhos
DYNAMIC CHARACTERISTICS
Input Capacitance Ciss − 1005 1260 pF
(VDS = 25 Vdc, VGS = 0 Vdc,
Output Capacitance Coss − 271 420
f = 1.0 MHz)
Transfer Capacitance Crss − 87 112
SWITCHING CHARACTERISTICS (Note 3)
Turn−On Delay Time td(on) − 17 25 ns
Rise Time (VDD = 20 Vdc, ID = 20 Adc, tr − 137 160
VGS = 5.0 Vdc,
Turn−Off Delay Time RG = 9.1 W) (Note 2) td(off) − 38 45
Fall Time tf − 31 40
Gate Charge QT − 13.8 18.9 nC
(VDS = 48 Vdc, ID = 15 Adc,
Q1 − 2.8 −
VGS = 10 Vdc) (Note 2)
Q2 − 6.6 −
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage VSD Vdc
(IS = 20 Adc, VGS = 0 Vdc) (Note 2) − 1.0 1.15
(IS = 20 Adc, VGS = 0 Vdc, TJ = 125°C) − 0.9 −
Reverse Recovery Time trr − 23 − ns
(IS =15 Adc, VGS = 0 Vdc, ta − 13 −
dlS/dt = 100 A/ms) (Note 2) tb − 10 −
Reverse Recovery Stored Charge QRR − 0.017 − mC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperature.

ORDERING INFORMATION
Device Package Shipping†
NTD20N03L27T4G DPAK 2500 / Tape & Reel
(Pb−Free)
NVD20N03L27T4G* DPAK 2500 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*NVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP
Capable.

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 NTD20N03L27, NVD20N03L27

40 40
VGS = 10 V VDS > = 10 V
35 36
VGS = 4 V
−ID, DRAIN CURRENT (AMPS)

ID, DRAIN CURRENT (AMPS)

VGS = 8 V 32
30 VGS = 4.5 V
28
25 VGS = 5 V
24
VGS = 3.5 V TJ = 100°C
20 20
VGS = 6 V
16 TJ = 25°C
15 TJ = −55°C
VGS = 3 V 12
10
TJ = 25°C 8
5 VGS = 2.5 V 4
0 0
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
−VDS, DRAIN−TO−SOURCE VOLTAGE (V) −VGS, GATE−TO−SOURCE VOLTAGE (V)

Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics

RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)

RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)

0.04 0.03
VGS = 5 V TJ = 25°C
0.035 TJ = 100°C
0.03 0.025 VGS = 5 V
TJ = 25°C
0.025

0.02 TJ = −55°C 0.02

0.015 VGS = 10 V

0.01 0.015

0.005

0 0.01
2 5 8 12 15 18 22 25 28 32 35 38 0 4 8 12 16 20 24 28 32 36 40
ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS)

Figure 3. On−Resistance vs. Drain Current and Figure 4. On−Resistance vs. Drain Current and
RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)

Temperature Gate Voltage

1.6 1000
ID = 10 A VGS = 0 V
VGS = 5 V
1.4
TJ = 125°C
−IDSS, LEAKAGE (nA)

100
1.2

TJ = 100°C
1
10

0.8

0.6 1
−50 −25 0 25 50 75 100 125 150 0 3 6 9 12 15 18 21 24 27 30
TJ, JUNCTION TEMPERATURE (°C) −VDS, DRAIN−TO−SOURCE VOLTAGE (V)

Figure 5. On−Resistance Variation with Figure 6. Drain−to−Source Leakage Current

Temperature vs. Voltage

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 NTD20N03L27, NVD20N03L27

2500 12

VGS, GATE−TO−SOURCE VOLTAGE (V)

VGS − VDS
Q
10
200
C, CAPACITANCE (pF)

8
1500 VGS
Ciss 6
1000 Q1 Q2
4

500 Coss
Crss 2 ID = 20 A
TJ = 25°C
0 0
10 8 6 4 2 0 2 4 6 8 10 12 14 16 18 20 23 25 0 2 4 6 8 10 12 14
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V) Qg, TOTAL GATE CHARGE (nC)

Figure 7. Capacitance Variation Figure 8. Gate−to−Source and

Drain−to−Source Voltage vs. Total Charge

1000 20
VGS = 0 V
18
IS, SOURCE CURRENT (AMPS)
TJ = 25°C
16
tr 14
100
t, TIME (ns)

tf 12

td(off) 10
8
10 td(on) 6
VDS = 20 V
ID = 20 A 4
VGS = 5.0 V 2
TJ = 25°C
1 0
1 10 100 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
RG, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (V)

Figure 9. Resistive Switching Time Variation Figure 10. Diode Forward Voltage vs. Current
vs. Gate Resistance
EAS, SINGLE PULSE DRAIN−TO−SOURCE

350
ID = 24 A
300
AVALANCHE ENERGY (mJ)

250

200

150

100

50

0
25 50 75 100 125 150
TJ, STARTING JUNCTION TEMPERATURE (°C)

Figure 11. Maximum Avalanche Energy vs.

Starting Junction Temperature

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 NTD20N03L27, NVD20N03L27

PACKAGE DIMENSIONS

DPAK (SINGLE GAUGE)

CASE 369C
ISSUE E

NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
A Y14.5M, 1994.
E C 2. CONTROLLING DIMENSION: INCHES.
A 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DI-
b3 MENSIONS b3, L3 and Z.
B c2 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
4 NOT EXCEED 0.006 INCHES PER SIDE.
L3 Z Z 5. DIMENSIONS D AND E ARE DETERMINED AT THE
D OUTERMOST EXTREMES OF THE PLASTIC BODY.
DETAIL A H 6. DATUMS A AND B ARE DETERMINED AT DATUM
1 2 3 PLANE H.
7. OPTIONAL MOLD FEATURE.

L4 INCHES MILLIMETERS
NOTE 7
DIM MIN MAX MIN MAX
b2 c BOTTOM VIEW BOTTOM VIEW A 0.086 0.094 2.18 2.38
e ALTERNATE
SIDE VIEW CONSTRUCTION
A1 0.000 0.005 0.00 0.13
b b 0.025 0.035 0.63 0.89
0.005 (0.13) C b2 0.028 0.045 0.72 1.14
TOP VIEW
M H
b3 0.180 0.215 4.57 5.46
c 0.018 0.024 0.46 0.61
GAUGE SEATING c2 0.018 0.024 0.46 0.61
L2 PLANE C PLANE D 0.235 0.245 5.97 6.22
E 0.250 0.265 6.35 6.73
e 0.090 BSC 2.29 BSC
L H 0.370 0.410 9.40 10.41
A1 L 0.055 0.070 1.40 1.78
L1 L1 0.114 REF 2.90 REF
DETAIL A L2 0.020 BSC 0.51 BSC
ROTATED 905 CW L3 0.035 0.050 0.89 1.27
L4 −−− 0.040 −−− 1.01
Z 0.155 −−− 3.93 −−−

SOLDERING FOOTPRINT* STYLE 2:

PIN 1. GATE
2. DRAIN
6.20 3.00 3. SOURCE
4. DRAIN
0.244 0.118
2.58
0.102

5.80 1.60 6.17

0.228 0.063 0.243

SCALE 3:1 ǒinches

mm Ǔ

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.

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