SMK630F
Advanced N-Ch Power MOSFET
DC-DC CONVERTER APPLICATION
HIGH VOLTAGE SWITCHING APPLICATIONS
Features PIN Connection
High Voltage : BVDSS=200V(Min.)
D
Low Crss : Crss=24pF(Typ.)
Low gate charge : Qg=12nC(Typ.)
Low RDS(on) : RDS(on)=0.4Ω(Max.)
G
Ordering Information
Type No. Marking Package Code GD
S S
SMK630F SMK630 TO-220F-3L TO-220F-3L
Marking Diagram
Column 1 : Manufacturer
AUK
Column 2 : Production Information
AUK
GYMDD e.g.) GYMDD
Δ YMDD
SMK630 -. G : Factory management code
SDB20D45
-. YMDD : Date Code (year, month, daily)
Column 3 : Device Code
Absolute maximum ratings (TC=25C unless otherwise noted)
Characteristic Symbol Rating Unit
Drain-source voltage VDSS 200 V
Gate-source voltage VGSS 30 V
(Tc=25℃) 9 A
Drain current (DC) * ID
(Tc=100℃) 5.4 A
*
Drain current (Pulsed) IDM 36 A
Power dissipation PD 30 W
Avalanche current (Single) ② IAS 9 A
Single pulsed avalanche energy ② EAS 232 mJ
Avalanche current (Repetitive) ① IAR 9 A
Repetitive avalanche energy ① EAR 9.5 mJ
Junction temperature TJ 150
C
Storage temperature range Tstg -55~150
* Limited by maximum junction temperature
Characteristic Symbol Typ. Max. Unit
Thermal Junction-case Rth(J-C) - 4.16
C/W
resistance Junction-ambient Rth(J-A) - 62.5
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SMK630F
Electrical Characteristics (TC=25C unless otherwise noted)
Characteristic Symbol Test Condition Min. Typ. Max. Unit
Drain-source breakdown voltage BVDSS ID=250uA, VGS=0 200 - - V
Gate threshold voltage VGS(th) ID=250uA, VDS=VGS 2.0 - 4.0 V
Drain-source cut-off current IDSS VDS=200V, VGS=0V - - 1 uA
Gate leakage current IGSS VDS=0V, VGS=30V - - 100 nA
Drain-source on-resistance ④ RDS(ON) VGS=10V, ID=4.5A - 0.34 0.40
Forward transfer conductance ④ gfs VDS=10V, ID=4.5A - 5.5 - S
Input capacitance Ciss - 420 525
VGS=0V, VDS=25V,
Output capacitance Coss - 99 128 pF
f=1MHz
Reverse transfer capacitance Crss - 24 28
Turn-on delay time td(on) - 11 -
Rise time tr VDD=100V, ID=9A - 92 -
RG=25Ω ns
Turn-off delay time td(off) ③④ - 70 -
Fall time tf - 72 -
Total gate charge Qg - 12 17
VDS=160V, VGS=10V
Gate-source charge Qgs ID=9A - 2.4 - nC
Gate-drain charge Qgd ③④ - 3.5 -
Source-Drain Diode Ratings and Characteristics (TC=25C unless otherwise noted)
Characteristic Symbol Test Condition Min. Typ. Max. Unit
Source current (DC) IS Integral reverse diode - - 9
A
Source current (Pulsed) ① ISM in the MOSFET - - 36
Forward voltage ④ VSD VGS=0V, IS=9A - - 1.4 V
Reverse recovery time trr IS=9A, VGS=0V - 158 - ns
Reverse recovery charge Qrr dIF/dt=100A/us - 0.97 - uC
Note ;
① Repetitive rating : Pulse width limited by maximum junction temperature
② L=4.3mH, IAS=9A, VDD=50V, RG=25Ω, Starting TJ=25℃
③ Pulse Test : Pulse width≤300us, Duty cycle≤2%
④ Essentially independent of operating temperature
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SMK630F
Typical Characteristic Curves
Fig. 1 ID - VDS Fig. 2 ID - VGS
Fig. 3 RDS(on) - ID Fig. 4 IS - VSD
Fig. 5 Capacitance - VDS Fig. 6 VGS - QG
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SMK630F
Fig. 7 VDSS - TJ Fig. 8 RDS(on) - TJ
C C
Fig. 9 ID - TC Fig. 10 Safe Operating Area
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SMK630F
Fig. 11 Gate Charge Test Circuit & Waveform
Fig. 12 Resistive Switching Test Circuit & Waveform
Fig. 13 EAS Test Circuit & Waveform
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SMK630F
Fig. 14 Diode Reverse Recovery Time Test Circuit & Waveform
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SMK630F
Outline Dimension unit: mm
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SMK630F
The AUK Corp. products are intended for the use as components in general electronic
equipment (Office and communication equipment, measuring equipment, home
appliance, etc.).
Please make sure that you consult with us before you use these AUK Corp. products
in equipments which require high quality and / or reliability, and in equipments which
could have major impact to the welfare of human life(atomic energy control, airplane,
spaceship, transportation, combustion control, all types of safety device, etc.). AUK
Corp. cannot accept liability to any damage which may occur in case these AUK Corp.
products were used in the mentioned equipments without prior consultation with AUK
Corp..
Specifications mentioned in this publication are subject to change without notice.
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