DATA SHEET

MOS FIELD EFFECT TRANSISTOR

µPA672T
N-CHANNEL MOS FET ARRAY
FOR SWITCHING

The µPA672T is a super-mini-mold device provided PACKAGE DIMENSIONS (in millimeters)

with two MOS FET elements. It achieves high-density
+0.1
mounting and saves mounting costs. 0.2 –0 +0.1
0.15 –0.05

FEATURES
6 5 4

1.25 ±0.1
2.1 ±0.1
• Two MOS FET circuits in package the same size as
SC-70 0 to 0.1

• Automatic mounting supported 1 2 3

0.7
0.65 0.65
1.3 0.9 ±0.1
2.0 ±0.2

PIN CONNECTION

6 5 4

1. Source 1 (S1)
2. Gate 1 (G1)
3. Drain 2 (D2)
4. Source 2 (S2)
5. Gate 2 (G2)
6. Drain 1 (D1)
1 2 3 Marking: MA

ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)

PARAMETER SYMBOL TEST CONDITIONS RATINGS UNIT

Drain to Source Voltage VDSS 50 V

Gate to Source Voltage VGSS ±7.0 V

Drain Current (DC) ID(DC) 100 mA

Drain Current (pulse) ID(pulse) PW ≤ 10 ms, Duty Cycle ≤ 50 % 200 mA

Total Power Dissipation PT 200 (Total) mW

Channel Temperature Tch 150 ˚C

Storage Temperature Tstg –55 to +150 ˚C

Document No. G11259EJ1V0DS00 (1st edition)

Date Published June 1996 P
Printed in Japan
© 1996
 µPA672T

ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Drain Cut-off Current IDSS VDS = 50 V, VGS = 0 10 µA

Gate Leakage Current IGSS VGS = ±7.0 V, VDS = 0 ±5.0 µA
Gate Cut-off Voltage VGS(off) VDS = 3.0 V, ID = 1.0 µA 0.7 1.0 1.5 V

Forward Transfer Admittance |yfs| VDS = 3.0 V, ID = 10 mA 20 mS

Drain to Source On-State Resistance RDS(on)1 VGS = 2.5 V, ID = 10 mA 20 40 Ω

Drain to Source On-State Resistance RDS(on)2 VGS = 4.0 V, ID = 10 mA 15 20 Ω

Input Capacitance Ciss VDS = 3.0 V, VGS = 0, f = 1.0 MHz 6 pF

Output Capacitance Coss 8 pF

Reverse Transfer Capacitance Crss 1.2 pF

Turn-On Delay Time td(on) VDD = 3 V, ID = 20 mA, VGS(on) = 3 V, 9 ns

RG = 10 Ω, RL = 120 Ω
Rise Time tr 50 ns

Turn-Off Delay Time td(off) 20 ns

Fall Time tf 40 ns

SWITCHING TIME MEASUREMENT CIRCUIT AND CONDITIONS

VGS
90 %
RL Gate VGS(on)
DUT voltage 10 %
waveform 0

VDD
ID 90 %
RG 90 %
PG. ID
Drain 10 % 10 %
current 0
waveform
VGS td(on) tr td(off) tf
0
ton toff
τ

τ = 1µs
Duty Cycle ≤ 1 %

2
 µPA672T

TYPICAL CHARACTERISTICS (TA = 25 ˚C)

TOTAL POWER DISSIPATION vs. DRAIN CURRENT vs.

AMBIENT TEMPERATURE DRAIN TO SOURCE VOLTAGE
300 100
Free air
PT - Total Power Dissipation - mW

250 4.0 V
80 3.0 V

ID - Drain Current - mA
3.5 V
200
60
150
Pe 2.5 V
ro To
ne ta 40
un l
100 it

20 VGS = 2.0 V
50

0 25 50 75 100 125 150 0 1 2 3 4 5

TA - Ambient Temperature - ˚C VDS - Drain to Source Voltage - V

FORWARD TRANSFER ADMITTANCE vs.

TRANSFER CHARACTERISTICS DRAIN CURRENT
100 100
VDS = 3 V VDS = 3 V
|yfs| - Forward Transfer Admittance - mS
10
TA = –25 ˚C
ID - Drain Current - mA

50 25 ˚C
1 TA = 75 ˚C
25 ˚C
125 ˚C
–25 ˚C
0.1
20
0.01

0.001 0
0 1 2 3 1 2 5 10 20 50 100
VGS - Gate to Source Voltage - V ID - Drain Current - mA

DRAIN TO SOURCE ON-STATE RESISTANCE DRAIN TO SOURCE ON-STATE RESISTANCE

vs. DRAIN CURRENT vs. DRAIN CURRENT
RDS(on) - Drain to Source On-State Resistance - Ω

RDS(on) - Drain to Source On-State Resistance - Ω

100 100
VGS = 2.5 V VGS = 4 V

50
50
TA = 75 ˚C
25 ˚C TA = 75 ˚C
20 20
–25 ˚C 25 ˚C
–25 ˚C
10 10

5 5

2 2

1 1
1 2 5 10 20 50 100 1 2 5 10 20 50 100
ID - Drain Current - mA ID - Drain Current - mA

3
 µPA672T

DRAIN TO SOURCE ON-STAGE RESISTANCE CAPACITANCE vs. DRAIN TO

vs. GATE TO SOURCE VOLTAGE SOURCE VOLTAGE
RDS(on) - Drain to Source On-State Resistance - Ω

30 10
ID = 10 mA
Ciss

Ciss, Coss, Crss, - Capacitance - pF

5
ID = 1 mA
10 mA Coss
20 50 mA
2

10 0.5 Crss

0.2
VGS = 0
f = 1 MHz
0.1
1 2 3 4 5 6 7 1 2 5 10 20 50 100
VGS - Gate to Source Voltage - V VDS - Drain to Source Voltage - V

SOURCE TO DRAIN DIODE

SWITCHING CHARACTERISTICS FORWARD VOLTAGE
100 100
tr
td(on), tr, td(off), tr - Switching Time - ns

ISD - Source to Drain Current - mA

50

tf
20
td(off)
10 10
td(on)

VDD = 3 V
2 VGS(on) = 3 V
RG = 10 Ω
1 1
1 20 50 100 200 500 1000 0 0.2 0.4 0.6 0.8 1.0
ID - Drain Current - mA VSD - Source to Drain Voltage - V

4
 µPA672T

REFERENCE

Document Name Document No.

NEC semiconductor device reliability/quality control system TEI-1202

Quality grade on NEC semiconductor devices IEI-1209

Semiconductor device mounting technology manual C10535E

Guide to quality assurance for semiconductor devices MEI-1202

Semiconductor selection guide X10679E

5
 µPA672T

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consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
“Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on
a customer designated “quality assurance program“ for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact NEC Sales Representative in advance.
Anti-radioactive design is not implemented in this product.

M4 94.11