SQJA36EP

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Vishay Siliconix
Automotive N-Channel 40 V (D-S) 175 °C MOSFET
FEATURES
PowerPAK® SO-8L
• TrenchFET® Gen IV power MOSFET
• AEC-Q101 qualified
• 100 % Rg and UIS tested
D
• Qgd/Qgs ratio < 1 optimizes switching
characteristics
1
6.
15 2 S
• Material categorization:
m
m
3 S for definitions of compliance please
m 4 S see www.vishay.com/doc?99912
1 0m G
4.9
D
Top View Bottom View

PRODUCT SUMMARY
VDS (V) 40
G
RDS(on) () at VGS = 10 V 0.00124
ID (A) 350
Configuration Single N-Channel MOSFET
Package PowerPAK SO-8L S

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT
Drain-source voltage VDS 40
V
Gate-source voltage VGS ± 20
TC = 25 °C 350
Continuous drain current ID
TC = 125 °C 234
Continuous source current (diode conduction) IS 324 A
Pulsed drain current a IDM 600
Single pulse avalanche current IAS 48
L = 0.1 mH
Single pulse avalanche energy EAS 115 mJ
TC = 25 °C 500
Maximum power dissipation a PD W
TC = 125 °C 166
Operating junction and storage temperature range TJ, Tstg -55 to +175
°C
Soldering recommendations (peak temperature) c 260

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL LIMIT UNIT
Junction-to-ambient PCB mount b RthJA 68
°C/W
Junction-to-case (drain) RthJC 0.3
Notes
a. Pulse test; pulse width  300 μs, duty cycle  2 %
b. When mounted on 1" square PCB (FR4 material)
c. See solder profile (www.vishay.com/doc?73257). The end of the lead terminal is exposed copper (not plated) as a result of the singulation
process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom
side solder interconnection

S19-0980-Rev. E, 18-Nov-2019 1 Document Number: 76588

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SPECIFICATIONS (TC = 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-source breakdown voltage VDS VGS = 0, ID = 250 μA 40 - -
V
Gate-source threshold voltage VGS(th) VDS = VGS, ID = 250 μA 2.5 3.0 3.5
Gate-source leakage IGSS VDS = 0 V, VGS = ± 20 V - - ± 100 nA
VGS = 0 V VDS = 40 V - - 1
Zero gate voltage drain current IDSS VGS = 0 V VDS = 40 V, TJ = 125 °C - - 50 μA
VGS = 0 V VDS = 40 V, TJ = 175 °C - - 250
On-state drain current a ID(on) VGS = 10 V VDS  5 V 30 - - A
VGS = 10 V ID = 15 A - 0.00103 0.00124
Drain-source on-state resistance a RDS(on) VGS = 10 V ID = 15 A, TJ = 125 °C - - 0.00190 
VGS = 10 V ID = 15 A, TJ = 175 °C - - 0.00223
Forward transconductance b gfs VDS = 15 V, ID = 10 A - 95 - S
Dynamic b
Input capacitance Ciss - 5309 6636
Output capacitance Coss VGS = 0 V VDS = 25 V, f = 1 MHz - 1521 1902 pF
Reverse transfer capacitance Crss - 138 175
Total gate charge c Qg - 86 107
Gate-source charge c Qgs VGS = 10 V VDS = 20 V, ID = 40 A - 23.6 - nC
Gate-drain charge c Qgd - 6 -
Gate resistance Rg f = 1 MHz 1 1.65 2.64 
Turn-on delay time c td(on) - 18 24
Rise time c tr VDD = 20 V, RL = 0.5  - 17 21
ns
Turn-off delay time c td(off) ID  40 A, VGEN = 10 V, Rg = 1  - 35 44
Fall time c tf - 13 17
Source-Drain Diode Ratings and Characteristics b
Pulsed current a ISM - - 600 A
Forward voltage VSD IF = 15 A, VGS = 0 V - - 1.1 V
Body diode reverse recovery time trr - 52 68 ns
Body diode reverse recovery charge Qrr - 36 47 nC
IF = 40 A, di/dt = 100 A/μs
Reverse recovery fall time ta - 27 46
ns
Reverse recovery rise time tb - 25 46
Body diode peak reverse recovery
IRM(REC) - 1.3 2.2 A
current
Notes
a. Pulse test; pulse width  300 μs, duty cycle  2 %
b. Guaranteed by design, not subject to production testing
c. Independent of operating temperature

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.

S19-0980-Rev. E, 18-Nov-2019 2 Document Number: 76588

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TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)

Axis Title Axis Title

600 10000 50 10000
VGS = 7 V thru 10 V

480 40

ID - Drain Current (A)

ID - Drain Current (A)

VGS = 6 V 1000 1000

360 30

2nd line

2nd line
1st line

1st line
2nd line

2nd line
240 20
100 TC = 25 °C 100
VGS = 5 V

120 10
TC = -55 °C
VGS = 4 V TC = 125 °C

0 10 0 10
0 2 4 6 8 10 0 2 4 6 8
VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
2nd line 2nd line

Output Characteristics Transfer Characteristics

Axis Title Axis Title

160 10000 180 10000
TC = -55 °C

128 144
gfs - Transconductance (S)

TC = 25 °C
ID - Drain Current (A)

1000 TC = 125 °C 1000

96 108

2nd line
2nd line

1st line
1st line
2nd line

2nd line

64 TC = 25 °C 72
100 100

32 36
TC = 125 °C
TC = -55 °C
0 10 0 10
0 2 4 6 8 10 0 12 24 36 48 60
VGS - Gate-to-Source Voltage (V) ID - Drain Current (A)
2nd line 2nd line

Transfer Characteristics Transconductance

Axis Title
0.004
8000 10000
RDS(on) - On-Resistance (Ω)

0.003 Ciss
6000
C - Capacitance (pF)

1000
2nd line

2nd line
1st line
2nd line

0.002
4000
VGS = 7.5 V

Coss 100
0.001
2000
VGS = 10 V
Crss
0.000
0 10
0 30 60 90 120
0 10 20 30 40
ID - Drain Current (A)
2nd line VDS - Drain-to-Source Voltage (V)
2nd line

On-Resistance vs. Drain Current Capacitance

S19-0980-Rev. E, 18-Nov-2019 3 Document Number: 76588

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TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)

Axis Title Axis Title

10 10000 54

ID = 1 mA

VDS - Drain-to-Source Voltage (V)

VGS - Gate-to-Source Voltage (V)

ID = 40 A 53
8 VDS = 20 V
52
1000
6

2nd line

2nd line
51

1st line

1st line
2nd line

2nd line
50
4
100
49
2
48

0 10 47
0 20 40 60 80 100 -50 -25 0 25 50 75 100 125 150 175
Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C)
2nd line 2nd line

Gate Charge Drain Source Breakdown vs. Junction Temperature

Axis Title Axis Title

2.0 10000 100 10000
RDS(on) - On-Resistance (Normalized)

ID = 30 A

1.7
10
IS - Source Current (A)

VGS = 10 V
1000 1000
1.4 TJ = 150 °C
2nd line

2nd line
1st line

1st line
2nd line
2nd line

VGS = 7.5 V 1
1.1
100 100
0.1 TJ = 25 °C
0.8

0.5 10 0.01 10
-50 -25 0 25 50 75 100 125 150 175 0 0.2 0.5 0.7 1.0 1.2
TJ - Junction Temperature (°C) VSD - Source-to-Drain Voltage (V)
2nd line 2nd line

On-Resistance vs. Junction Temperature Source Drain Diode Forward Voltage

Axis Title
0.008 10000
RDS(on) - On-Resistance (Ω)

0.006
ID = 30 A 1000
2nd line
1st line
2nd line

0.004

100
TJ = 125°C
0.002

TJ = 25 °C
0.000 10
2 4 6 8 10
VGS - Gate-to-Source Voltage (V)
2nd line

On-Resistance vs. Gate-to Source Voltage

S19-0980-Rev. E, 18-Nov-2019 4 Document Number: 76588

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TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)

Axis Title
1000 IDM limited 10000

ID limited

100

ID - Drain Current (A)

1000

2nd line
1st line
2nd line 10
100 μs

Limited by RDS(on) a 1 ms 100

10 ms
1
TC = 25 °C,
single pulse BVDSS limited
100 ms
0.1 1 s, 10
10s, DC
0.01 0.1 1 10 100
VDS - Drain-to-Source Voltage (V)

Safe Operating Area

Note
a. VGS > minimum VGS at which RDS(on) is specified

Axis Title
0.7
0.005 10000

0.2
0.004
RDS(on) - On-Resistance (Ω)

VGS(th) Variance (V)

ID = 50 A 1000
-0.3
0.003
2nd line

ID = 5 mA
2nd line
1st line
2nd line

-0.8
0.002 TJ = 150°C
ID = 250 μA
100
-1.3
0.001
TJ = 25 °C
-1.8
0.000 10
-50 -25 0 25 50 75 100 125 150 175
2 4 6 8 10
TJ - Temperature (°C)
VGS - Gate-to-Source Voltage (V) 2nd line
2nd line

On-Resistance vs. Gate-to Source Voltage Threshold Voltage

S19-0980-Rev. E, 18-Nov-2019 5 Document Number: 76588

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TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)

1
Duty cycle = 0.5
Normalized Effective Transient
Thermal Impedance

0.2
Notes:
0.1
0.1 P DM
0.05
t1
t2
t1
0.02 1. Duty cycle, D =
t2
2. Per unit base = R thJA = 68 °C/W
3. T JM - TA = PDMZthJA(t)
Single pulse
4. Surface mounted
0.01
10 -4 10 -3 10 -2 10 -1 1 10 100 600
Square Wave Pulse Duration (s)

Normalized Thermal Transient Impedance, Junction-to-Ambient

1
Duty cycle = 0.5
Normalized Effective Transient
Thermal Impedance

0.2

0.1

0.1

0.05
0.02
Single pulse

0.01
10 -4 10 -3 10 -2 10 -1 1 10
Square Wave Pulse Duration (s)

Normalized Thermal Transient Impedance, Junction-to-Case

Note
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Case (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?76588.

S19-0980-Rev. E, 18-Nov-2019 6 Document Number: 76588

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 Package Information
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Vishay Siliconix
PowerPAK® SO-8L (PPKSO8LWLA) Case Outline 3

b2 D5 D6 D5

W1

W4
E5

E2
E3
E4
E1
E
Pin 1 marking

z2
A1
ɵ

L1
0.2 Gauge line

L
c
b b1 e z1 D2
D1 Backside view (single)
Topside view
A

MILLIMETERS INCHES
DIM.
MIN. NOM. MAX. MIN. NOM. MAX.
A 1.00 1.05 1.10 0.039 0.041 0.043
A1 0.00 --- 0.127 0.000 --- 0.005
b 0.33 0.41 0.49 0.013 0.016 0.019
b1 0.43 0.51 0.59 0.017 0.020 0.023
b2 4.00 4.10 4.20 0.157 0.161 0.165
c 0.15 0.20 0.25 0.006 0.008 0.010
D1 4.80 4.90 5.00 0.189 0.193 0.197
D2 3.86 3.96 4.06 0.152 0.156 0.160
D5 0.51 0.61 0.71 0.020 0.024 0.028
D6 2.64 2.74 2.84 0.104 0.108 0.112
e 1.27 BSC 0.050 BSC
E 6.05 6.15 6.25 0.238 0.242 0.246
E1 4.27 4.37 4.47 0.168 0.172 0.176
E2 3.18 3.28 3.38 0.125 0.129 0.133
E3 3.48 3.58 3.68 0.137 0.141 0.145
E4 2.72 2.82 2.92 0.107 0.111 0.115
E5 0.71 0.81 0.91 0.028 0.032 0.036
L 0.62 0.72 0.82 0.024 0.028 0.032
L1 0.92 1.07 1.22 0.036 0.042 0.048
W1 0.31 0.41 0.51 0.012 0.016 0.020
W4 0.31 0.36 0.41 0.012 0.014 0.016
z1 0.37 0.47 0.57 0.015 0.019 0.022
z2 0.99 1.09 1.19 0.039 0.043 0.047
θ 0° --- 5° 0° --- 5°
ECN: C23-1016-Rev. D, 18-Sep-2023
DWG: 6067
Note
• Millimeter will govern

Revison: 18-Sep-2023 1 Document Number: 76666

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 PAD Pattern
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Recommended Land Pattern PowerPAK® SO-8L Single Short Ear

5.3
(0.209)

(0.028)
2.7

0.71
(0.106)
0.3
(0.012)
(0.030)
0.76
00 .2
0. 0
8)
(R x R
4

(0.137)
3.48
(0.111)
2.82
(0.265)
6.73

3.96
(0.156)
(0.043)
1.1
00 .1

1.27 0.68
0. R0
4)

(0.050) (0.027)
(R x
16

Dimensions in Millimeters (Inches)

Revision: 24-Aug-2021 1 Document Number: 78020

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Revision: 01-Jan-2025 1 Document Number: 91000

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