polyfet rf devices
L8721P
General Description
Silicon VDMOS and LDMOS
transistors designed specifically SILICON GATE ENHANCEMENT MODE
for broadband RF applications.
Suitable for Militry Radios,
RF POWER LDMOS TRANSISTOR
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI, 15.0 Watts Single Ended
Laser Driver and others.
TM Package Style S08 P
"Polyfet" process features
low feedback and output capacitances
resulting in high F t transistors with high
HIGH EFFICIENCY, LINEAR
input impedance and high efficiency. HIGH GAIN, LOW NOISE
o
ABSOLUTE MAXIMUM RATINGS ( T = 25 C )
Total Junction to Maximum Storage DC Drain Drain to Drain to Gate to
Device Case Thermal Junction Temperature Current Gate Source Source
Dissipation Resistance Temperature Voltage Voltage Voltage
o o o o
60 Watts 2.50 C/W 150 C -65 C to 150 C 8.0 A 36 V 36 V 20 V
RF CHARACTERISTICS ( 15.0 WATTS OUTPUT )
SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS
Gps Common Source Power Gain 11 dB Idq = 0.40 A, Vds = 12.5 V, F = 500 MHz
η Drain Efficiency 45 % Idq = 0.40 A, Vds = 12.5 V, F = 500 MHz
VSWR Load Mismatch Tolerance 20:1 Relative Idq = 0.40 A, Vds = 12.5 V, F = 500 MHz
ELECTRICAL CHARACTERISTICS ( EACH SIDE )
SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS
Bvdss Drain Breakdown Voltage 36 V Ids = 0.20 mA, Vgs = 0V
Idss Zero Bias Drain Current 2.0 mA Vds = 12.5 V, Vgs = 0V
Igss Gate Leakage Current 1 uA Vds = 0V Vgs = 30V
Vgs Gate Bias for Drain Current 1 7 V Ids = 0.20 A, Vgs = Vds
gM Forward Transconductance 1.7 Mho Vds = 10V, Vgs = 5V
Rdson Saturation Resistance 0.40 Ohm Vgs = 20V, Ids = 8.00 A
Idsat Saturation Current 13.00 Amp Vgs = 20V, Vds = 10V
Ciss Common Source Input Capacitance 50.0 pF Vds = 12.5 Vgs = 0V, F = 1 MHz
Crss Common Source Feedback Capacitance 2.0 pF Vds = 12.5 Vgs = 0V, F = 1 MHz
Coss Common Source Output Capacitance 40.0 pF Vds = 12.5 Vgs = 0V, F = 1 MHz
POLYFET RF DEVICES REVISION 03/13/2002
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com
L8721P
POUT VS PIN GRAPH CAPACITANCE VS VOLTAGE
L8721P Pin vs Pout Freq=500MHz, L1C 1DIE CAPACITANCE
Vds=12.5Vdc, Idq=.4A
1000
25 15
14
20
Pout
100
13 Ciss
15
12 Coss
10 10
11
Crss
5 Gain
Efficiency @15 watts = 46% 10
1
0 9 0 5 10 15 20 25 30
0 0.5 1 1.5 2 2.5 3
VDS IN VOLTS
Pin in Watts
IV CURVE ID & GM VS VGS
L1C 1 DIE ID, GM vs VG
L1C 1 DIE IV 100
16
14
12
10 ID
ID IN AMPS
8
10
6
2
G
0 M
0 2 4 6 8 10 12 14 16 18 20
VDS IN VOLTS
1
vg=2v Vg=4v Vg=6v vg=8v vg=10v vg=12v
0 2 4 Vgs
6 in Volts
8 10 12 14
Zin Zout PACKAGE DIMENSIONS IN INCHES
Tolerance .XX +/-0.01 .XXX +/-.005 inches
03/13/2002
POLYFET RF DEVICES REVISION
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com
