DATA SHEET

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PNP Epitaxial Silicon

Transistor
BC638 TO−92−3
CASE 135AR
Bent Lead
1
Features 2
3
• Switching and Amplifier Applications
1. Emitter
• Complement to BC637 2. Collector
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS 3. Base
Compliant

ABSOLUTE MAXIMUM RATINGS MARKING DIAGRAM

(Values are at TA = 25°C unless otherwise noted)

Parameter Symbol Value Unit ABC

Collector−Emitter Voltage at VCER −60 V 638
RBE = 1 kW YWW

Collector−Emitter Voltage VCES −60 V

Collector−Emitter Voltage VCEO −60 V
Emitter−Base Voltage VEBO −5 V
A = Assembly Code
Collector Current IC −1 A BC638 = Device Code
YWW = Date Code
Peak Collector Current ICP −1.5 A
Base Current IB −100 mA
Junction Temperature TJ 150 °C ORDERING INFORMATION
Storage Temperature TSTG −65 to 150 °C See detailed ordering and shipping information on page 2 of
this data sheet.
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.

THERMAL CHARACTERISTICS (Note 1)

(Values are at TA = 25°C unless otherwise noted)

Parameter Symbol Value Unit

Power Dissipation PD 1 W
Dissipation Derate Above 25°C PD 8 mW/°C
Thermal Resistance, Junction−to−Ambient RqJA 125 °C/W
1. PCB size: FR−4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch)
with minimum land pattern size.

© Semiconductor Components Industries, LLC, 2005 1 Publication Order Number:

November, 2021 − Rev. 3 BC638/D
 BC638

ELECTRICAL CHARACTERISTICS
(Values are at TA = 25°C unless otherwise noted)
Symbol Parameter Conditions Min. Typ. Max. Unit
BVCEO Collector−Emitter Breakdown Voltage IC = −10 mA, IB = 0 −60 V
ICBO Collector Cut−Off Current VCB = −30 V, IE = 0 −0.1 mA
IEBO Emitter Cut−Off Current VEB = −5 V, IC = 0 −10 mA
hFE1 DC Current Gain VCE = −2 V, IC = −5 mA 25
hFE2 VCE = −2 V, IC = −150 mA 40 160
hFE3 VCE = −2 V, IC = −500 mA 25
VCE(sat) Collector−Emitter Saturation Voltage IC = −500 mA, IB = −50 mA −0.5 V
VBE(on) Base−Emitter On Voltage VCE = −2 V, IC = −500 mA −1 V
fT Current Gain Bandwidth Product VCE = −5 V, IC = −10 mA, f = 50 MHz 100 MHz
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.

ORDERING INFORMATION
Part Number Top Mark Package Shipping
BC638TA BC638 TO−92−3, case 135AR (Pb−Free) 2,000 Units / Fan Fold

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 BC638

TYPICAL PERFORMANCE CHARACTERISTICS

−500 1000
IB = − 1.8 mA
IC, COLLECTOR CURRENT [mA]

IB = − 1.6 mA VCE = − 2V

hFE, DC CURRENT GAIN

−400
IB = − 1.4 mA
IB = − 1.2 mA
−300 IB = − 1.0 mA

IB = − 0.8 mA 100
−200 IB = − 0.6 mA

IB = − 0.4 mA

−100 IB = − 0.2 mA

0 10
0 −10 −20 −30 −40 −50 −1 −10 −100 −1000
VCE, COLLECTOR−EMITTER VOLTAGE [V] IC, COLLECTOR CURRENT [mA]

Figure 1. Static Characteristic Figure 2. DC Current Gain

−10 −1000
VBE(sat), VCE(sat), SATURATION VOLTAGE [V]

IC = 10 IB

IC, COLLECTOR CURRENT [mA]

VCE = − 2V

−1 VBE(sat) −100

−0.1 −10
VCE(sat)

−0.01 −1
−1 −10 −100 −1000 0 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2
IC, COLLECTOR CURRENT [mA] VBE, BASE−EMITTER VOLTAGE [V]

Figure 3. Base−Emitter Saturation Voltage and Figure 4. Base−Emitter On Voltage

Collector−Emitter Saturation Voltage

100

f=1MHz
Cob, CAPACITANCE [pF]

10

1
−1 −10 −100

VCB, COLLECTOR−BASE VOLTAGE [V]

Figure 5. Collector Output Capacitance

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 MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS

TO−92 3 4.83x4.76 LEADFORMED

CASE 135AR
ISSUE O
DATE 30 SEP 2016

Electronic versions are uncontrolled except when accessed directly from the Document Repository.
DOCUMENT NUMBER: 98AON13879G Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

DESCRIPTION: TO−92 3 4.83X4.76 LEADFORMED PAGE 1 OF 1

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