A8514 Datasheet
A8514 Datasheet
VIN RSC D1
8 to 16 V Optional L1 VOUT
0.033 Ω 10 µH 2 A / 60 V
CIN RC CC
22 nF ROVP
4.7 µF RADJ 20 Ω Q1 COUT
50 V 137 kΩ
249 Ω GATE SW 4.7 µF
OVP
VSENSE 50 V
VC VIN A8514
CVDD VDD
100 kΩ 0.1 µF PAD LED1
FAULT LED2
PWM/EN LED3
APWM LED4
ISET
COMP
FSET/SYNC CP RZ
RISET 150 Ω
8.25 kΩ RFSET 120 pF
10 kΩ AGND PGND
CZ
0.47 µF
DESCRIPTION (CONTINUED)
The A8514 is provided in a 20-pin TSSOP package (suffix LP) with
an exposed pad for enhanced thermal dissipation. It is lead (Pb) free,
with 100% matte-tin leadframe plating.
SELECTION GUIDE
Part Number Packing [1]
A8514KLPTR-T 4000 pieces per 13-in. reel
1 Contact Allegro™ for additional packing options
2 Stresses beyond those listed in this table may cause permanent damage to the device. The Absolute Maximum ratings are
stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the Electrical
Characteristics table is not implied. Exposure to Absolute Maximum-rated conditions for extended periods may affect device reliability.
Table of Contents
Specifications 2
Setting the current sense resistor 24
Thermal Characteristics 3
Pin-out Diagram and Terminal List 3 Input UVLO 24
Characteristic Performance 8 VDD 24
Functional Description 11 Shutdown 24
Enabling the IC 11 Fault protection during operation 25
Powering up: LED pin short-to-ground check 11 Application Information 27
Soft start function 13 Design Example for Boost Configuration 27
Frequency selection 13
Design Example for SEPIC Configuration 31
Sync 14
LED current setting and LED dimming 16 Package Outline Drawing 35
PWM dimming 16 Appendix A. Feedback Loop Calculations A-1
APWM pin 17 Power Stage Transfer Function A-1
Analog dimming 19 Output to Control Transfer Function A-2
LED short detect 19 Stabilizing the Closed Loop System A-4
Overvoltage protection 20
Measuring the Feedback Loop Gain and Phase Margin A-6
Boost switch overcurrent protection 22
Input overcurrent protection and disconnect switch 23
2
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A8514 Fault Tolerant LED Driver
GATE 1 20 SW
VSENSE 2 19 OVP
VIN 3 18 PGND
THERMAL CHARACTERISTICS: May require derating at maximum conditions; see application information
Characteristic Symbol Test Conditions [1] Value Unit
2
On 2-layer PCB, 3 in. 40.0 °C/W
Package Thermal Resistance RθJA On 4-layer PCB based on JEDEC standard
29.0 °C/W
(estimated)
1 Additional thermal information available on the Allegro website.
3
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VDD SW
Internal VCC
Internal –
Soft Start Current
ISS Sense
+ PGND
–
VSENSE Thermal
Input Current
Sense Amplifier Shutdown
IADJ
Fault + OVP
GATE – VREF
PMOS OVP
Driver GOFF Sense
PAD
PGND AGND
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ELECTRICAL CHARACTERISTICS [1][2]: Valid at VIN = 16 V, TA = 25°C, indicates specifications guaranteed by design and
characterization over the full operating temperature range with TA = TJ = –40°C to 125°C, unless otherwise noted
Characteristics Symbol Test Conditions Min. Typ. Max. Unit
INPUT VOLTAGE SPECIFICATIONS
Operating Input Voltage Range [3] VIN 5 – 40 V
UVLO Start Threshold VUVLOrise VIN rising − – 4.35 V
UVLO Stop Threshold VUVLOfall VIN falling − – 3.90 V
UVLO Hysteresis [2] VUVLOHYS 300 450 600 mV
INPUT CURRENTS
Input Quiescent Current IQ PWM/EN = VIH ; SW = 2 MHz, no load − 5.5 10 mA
Input Sleep Supply Current IQSLEEP VIN = 16 V, VPWMEN = VFSETSYNC = 0 V − 2 10.0 μA
INPUT LOGIC LEVELS (PWM/EN AND APWM)
Input Logic Level-Low VIL VIN throughout operating input voltage range – – 400 mV
Input Logic Level-High VIH VIN throughout operating input voltage range 1.5 – – V
PWM/EN Pin Open Drain
RPWMEN PWM/EN = 5 V 60 100 140 kΩ
Pull-Down Resistor
APWM Pull-Down Resistor RAPWM PWM/EN = VIH 60 100 140 kΩ
APWM
APWM Frequency [2] fAPWM VIH = 2 V, VIL = 0 V 20 − 1000 kHz
ERROR AMPLIFIER
Open Loop Voltage Gain AVOL 44 48 52 dB
Transconductance gm ΔICOMP = ±10 μA 750 990 1220 μA/V
Source Current IEA(SRC) VCOMP = 1.5 V − –350 − μA
Sink Current IEA(SINK) VCOMP = 1.5 V − 350 − μA
COMP Pin Pull-Down Resistance RCOMP F̄¯ĀŪ¯L̄¯T̄¯ = 0 − 2000 − Ω
OVERVOLTAGE PROTECTION
Overvoltage Threshold VOVP(th) OVP connected to VOUT 7.7 8.1 8.5 V
OVP Sense Current IOVPH 188 199 210 μA
OVP Leakage Current IOVPLKG ROVP = 40.2 kΩ, VIN = 16 V, PWM/EN = VIL − 0.1 1 μA
Secondary Overvoltage Protection VOVP(sec) 53 55 58 V
BOOST SWITCH
Switch On-Resistance RSW ISW = 0.750 A, VIN = 16 V 75 300 600 mΩ
Switch Leakage Current ISWLKG VSW = 16 V, PWM/EN = VIL − 0.1 1 µA
Switch Current Limit ISW(LIM) 3.0 3.5 4.2 A
Higher than ISW(LIM)(max) for all conditions,
Secondary Switch Current Limit [2] ISW(LIM2) − 7.00 − A
device latches when detected
Soft Start Boost Current Limit ISWSS(LIM) Initial soft start current for boost switch − 700 − mA
Minimum Switch On-Time tSWONTIME 60 85 111 ns
Minimum Switch Off-Time tSWOFFTIME 30 47 68 ns
5
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ELECTRICAL CHARACTERISTICS [1][2] (continued): Valid at VIN = 16 V, TA = 25°C, indicates specifications guaranteed by
design and characterization over the full operating temperature range with TA = TJ = –40°C to 125°C, unless otherwise noted
Characteristics Symbol Test Conditions Min. Typ. Max. Unit
OSCILLATOR FREQUENCY
RFSET = 10 kΩ 1.8 2 2.2 MHz
Oscillator Frequency fSW RFSET = 20 kΩ 0.9 1 1.1 MHz
RFSET = 35.6 kΩ 520 580 640 kHz
FSET/SYNC Pin Voltage VFSET RFSET = 10 kΩ − 1.00 − V
FSET Frequency Range fFSET 580 − 2500 kHz
SYNCHRONIZATION
Synchronized PWM Frequency fSWSYNC 580 − 2300 kHz
Synchronization Input
tPWSYNCOFF 150 − − ns
Minimum Off‑Time
Synchronization Input
tPWSYNCON 150 − − ns
Minimum On‑Time
VSYNC(H) FSET/SYNC pin, high level 2.0 − – V
SYNC Input Logic Voltage
VSYNC(L) FSET/SYNC pin, low level – − 0.4 V
LED CURRENT SINKS
LEDx Accuracy ErrLED ISET = 120 µA − − 3 %
LEDx Matching ΔLEDx ISET = 120 µA − − 3 %
LEDx Regulation Voltage VLED VLED1=VLED2=VLED3 =VLED4, ISET = 120 µA 600 700 800 mV
ISET to ILEDx Current Gain AISET ISET = 120 µA 633 653 672 A/A
ISET Pin Voltage VISET 0.988 1.003 1.018 V
Allowable ISET Current ISET 20 − 120 µA
While LED sinks are in regulation, sensed
VLED Short Detect VLEDSC 4.6 5.1 5.6 V
from LEDx pin to ground
Current through each enabled LEDx pin
Soft Start LEDx Current ILEDSS − 2.0 – mA
during soft start
Measured while PWM/EN = low, during
Maximum PWM Dimming dimming control and internal references fSW
tPWML − 32,750 −
Until Off‑Time [2] are powered-on (exceeding tPWML results in cycles
shutdown)
Minimum PWM On‑Time tPWMH First cycle when powering-up device − 0.75 2 µs
Time between PWM enable and LED current
PWM High to LED‑On Delay tdPWM(on) − 0.5 1 µs
reaching 90% of maximum
Time between PWM enable going low and
PWM Low to LED‑Off Delay tdPWM(off) − 360 500 ns
LED current reaching 10% of maximum
6
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ELECTRICAL CHARACTERISTICS [1][2] (continued): Valid at VIN = 16 V, TA = 25°C, indicates specifications guaranteed by
design and characterization over the full operating temperature range with TA = TJ = –40°C to 125°C, unless otherwise noted
Characteristics Symbol Test Conditions Min. Typ. Max. Unit
GATE PIN
GATE Pin Sink Current IGSINK VGS = VIN − −104 − µA
Gate Fault Shutdown Greater than
tGFAULT2 − − 3 µs
2× Current [2]
Gate Fault Shutdown Greater than fSW
tGFAULT1 − 10,000 −
1–2× Current cycles
Gate to source voltage measured when gate
Gate Voltage VGS − –6.7 − V
is on
VSENSE Pin
VSENSE Pin Sink Current IADJ 18.8 20.3 21.8 µA
Measured between VIN and VSENSE,
VSENSE Trip Point VSENSEtrip1 94 104 114 mV
RADJ = 0 Ω
2× VSENSEtrip , instantaneous shutdown,
VSENSE 2× Trip [2] VSENSEtrip2 − 180 − mV
RADJ = 0 Ω
F̄¯Ā¯Ū¯L̄¯T̄¯ PIN
F̄¯ĀŪ¯L̄¯T̄¯ Pull-Down Voltage VFAULT IFAULT = 1 mA − − 0.5 V
¯ĀŪ¯L̄¯T̄¯ Pin Leakage Current
F̄ IFAULTLKG VFAULT = 5 V − − 1 µA
THERMAL PROTECTION (TSD)
Thermal Shutdown Threshold [2] TSD Temperature rising − 165 − °C
Thermal Shutdown Hysteresis [2] TSDHYS − 20 − °C
1 For input and output current specifications, negative current is defined as coming out of the node or pin (sourcing); positive current is defined as
going into the node or pin (sinking).
2 Ensured by design and characterization, not production tested.
3 Minimum V = 5 V is only required at startup. After startup is completed, the IC is able to function down to V = 4 V.
IN IN
7
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CHARACTERISTIC PERFORMANCE
TA = TJ
VIN Input Sleep Mode Current VIN UVLO Start Threshold Voltage
versus Ambient Temperature versus Ambient Temperature
10 4.40
9 4.35
8
VUVLOrise (V)
IQSLEEP (µA)
7
4.30
6 4.25
5 4.20
4 4.15
3
2
4.10
1 4.05
0 4.00
-50 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 110 120 130 -50 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 110 120 130
2.10
3.67
fSW (MHz)
2.05 3.66
2.00 3.65
1.95 3.64
3.63
1.90
3.62
1.85 3.61
1.80 3.60
-50 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 110 120 130 -50 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 110 120 130
VOVP(th) (V)
204
202 8.1
200 8.0
198 7.9
196
7.8
194
192 7.7
190 7.6
-50 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 110 120 130 -50 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 110 120 130
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Input Disconnect Switch Gate to Source Voltage VSENSE Pin Sink Current
versus Ambient Temperature versus Ambient Temperature
-6.3 20.8
20.7
-6.4
20.6
-6.5
IADJ (µA)
20.5
VGS (V)
-6.6 20.4
20.3
-6.7
20.2
-6.8 20.1
-6.9 20.0
-50 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 110 120 130 -50 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 110 120 130
LED Current versus Ambient Temperature ISET to LED Current Gain versus Ambient Temperature
ISET = 120 µA
83 670
82
665
AISET (A/A)
81
660
ILED (mA)
80
79 655
78
650
77
76 645
75 640
-50 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 110 120 130 -50 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 110 120 130
Temperature (°C) Temperature (°C)
-1
-2
-3
-50 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 110 120 130
Temperature (°C)
9
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A8514 Fault Tolerant LED Driver
95
Efficiency (%)
90
6 series LEDs each string
85 7 series LEDs each string
8 series LEDs each string
80
75
5 7 9 11 13 15 17
95
Efficiency (%)
90
6 series LEDs each string
85 7 series LEDs each string
8 series LEDs each string
80
75
5 7 9 11 13 15 17
10
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FUNCTIONAL DESCRIPTION
The A8514 incorporates a current-mode boost controller with Powering up: LED pin short-to-ground check
internal DMOS switch, and four LED current sinks. It can be The VIN pin has a UVLO function that prevents the A8514
used to drive four LED strings of up to 12 white LEDs in series, from powering-up until the UVLO threshold is reached. After
with current up to 80 mA per string. For optimal efficiency, the VIN pin goes above UVLO, and a high signal is present on
the PWM/EN pin, the IC proceeds to power-up. As shown in
the output of the boost stage is adaptively adjusted to the mini-
Figure 3, at this point the A8514 enables the disconnect switch
mum voltage required to power all of the LED strings. This is and checks if any LEDx pins are shorted to ground and/or are not
expressed by the following equation: used.
VOUT = max ( VLED1 ,..., VLED4 ) + VREG (1) The LED detect phase starts when the GATE voltage of the
where disconnect switch is equal to VIN – 4.5 V. After the voltage
VLEDx is the voltage drop across LED strings 1 through 4, and threshold on the LEDx pins exceeds 120 mV, a delay of between
3000 and 4000 clock cycles is used to determine the status of the
VREG is the regulation voltage of the LED current sinks (typi- pins. Thus, the LED detection duration varies with the switching
cally 0.7 V at the maximum LED current). frequency, as shown in the following table:
t t
Figure 3: Power-up diagram; shows VDD (ch1, 2 V/div.), FSET/SYNC (ch2, Figure 2: Power-up diagram; shows the relationship of an LEDx pin with
1 V/div.), ISET (ch3, 1 V/div.), and PWM/EN (ch4, 2 V/div.) pins, respect to the gate voltage of the disconnect switch (if used) during the
time = 200 µs/div. LED detect phase, as well as the duration of the LED detect phase for a
switching frequency of 2 MHz; shows GATE (ch1, 5 V/div.), LED (ch2,
500 mV/div.), ISET (ch3, 1 V/div.), and PWM/EN (ch4, 5 V/div.) pins,
time = 500 µs/div.
11
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LED1 LED1
C1 LED detection period C1 LED detection period
C2
LED2 LED2
C2
C3
ISET ISET
C3
C4 PWM/EN C4 PWM/EN
t t
Figure 4A: An LED detect occurring when both LED pins are selected to Figure 4B: Example with LED2 pin not being used; the detect voltage is
be used; shows LED1 (ch1, 500 mV/div.), LED2 (ch2, 500 mV/div.), ISET about 150 mV; shows LED1 (ch1, 500 mV/div.), LED2 (ch2, 500 mV/div.),
(ch3, 1 V/div.), and PWM/EN (ch4, 5 V/div.) pins, time = 500 µs/div. ISET (ch3, 1 V/div.), and PWM/EN (ch4, 5 V/div.) pins, time = 500 µs/div.
Short removed
LED2
C2
ISET
C3
C4 PWM/EN
Figure 4C: Example with one LED shorted to ground. The IC will not proceed
with power-up until the shorted LED pin is released, at which point the LED is
checked to see if it is being used; shows LED1 (ch1, 500 mV/div.), LED2 (ch2,
500 mV/div.), ISET (ch3, 1 V/div.), and PWM/EN (ch4, 5 V/div.) pins,
time = 1 ms/div.
12
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A8514 Fault Tolerant LED Driver
All unused pins should be connected with a 2.37 kΩ resistor to In case during operation a fault occurs that will increase the
ground, as shown in Figure 5. The unused pin, with the pull-down switching frequency, the FSET/SYNC pin is clamped to a
resistor, will be taken out of regulation at this point and will not maximum switching frequency of no more than 3.5 MHz. If the
contribute to the boost regulation loop. FSET/SYNC pin is shorted to GND the part will shut down. For
more details see the Fault Mode table later in this datasheet.
If a LEDx pin is shorted to ground the A8514 will not proceed
with soft start until the short is removed from the LEDx pin. This
prevents the A8514 from powering-up and putting an uncon-
Inrush current caused by
trolled amount of current through the LEDs. enabling the disconnect
switch (when used) Operation during
Soft start function C1 ISWSS(lim)
During soft start the LEDx pins are set to sink (ILEDSS) and the IOUT
boost switch current is reduced to the ISWSS(LIM) level to limit
the inrush current generated by charging the output capacitors. C2
When the converter senses that there is enough voltage on the IIN
LEDx pins the converter proceeds to increase the LED current to Normal operation
ISW(lim)
the preset regulation current and the boost switch current limit is C3
switched to the ISW(LIM) level to allow the A8514 to deliver the VOUT
necessary output power to the LEDs. This is shown in Figure 6. C4
PWM/EN
Frequency selection t
The switching frequency on the boost regulator is set by the resis-
tor connected to the FSET/SYNC pin. The switching frequency Figure 6: Startup diagram showing the input current, output voltage, and
can be anywhere from 580 kHz to 2.3 MHz. Figure 7 shows the output current; shows IOUT (ch1, 200 mA/div.), IIN (ch2, 1 A/div.), VOUT
(ch3, 20 V/div.), and PWM/EN (ch4, 5 V/div.), time = 1 ms/div.
typical switching frequencies for various resistor values, with
the relationship between RFSET and typical switching frequency
given as:
2.1
fSW = k / (RFSET + RINT ), or (2)
1.9
RFSET = k / fSW – RINT
Switching Frequency, fSW (MHz)
1.7
where RFSET is in in kΩ, fSW is in megahertz, k = 20.9 and RINT
(internal resistance of FSET pin) = 0.6 kΩ. 1.5
1.3
0.9
LED1
LED2
LED1
LED2
0.7
LED3 LED3
GND LED4 GND LED4
0.5
2.37 kΩ 10 12 14 16 18 20 22 24 26 28 30 32 34 36
Resistance for RFSET (kΩ)
Figure 5: Channel select setup: (left) using only LED1, LED2, and LED3, Figure 7: Typical Switching Frequency versus value of RFSET resistor
and (right) using all four channels.
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SYNC
The A8514 can also be synchronized using an external clock VOUT
on the FSET/SYNC pin. Figure 8 shows the correspondence
of a sync signal and the FSET/SYNC pin, and Figure 9 shows C1
IOUT
the result when a sync signal is detected: the LED current does C2
not show any variation while the frequency changeover occurs.
At power-up if the FSET/SYNC pin is held low, the IC will not
power-up. Only when the FSET/SYNC pin is tri-stated to allow
C3
the pin to rise, to about 1 V, or when a synchronization clock is FSET/SYNC
detected, will the A8514 try to power-up. SW node
The basic requirement of the sync signal is 150 ns minimum on-
time and 150 ns minimum off time, as indicated by the specifica-
C4
tions for tPWSYNCON and tPWSYNCOFF . Figure 10 shows the timing t
for a synchronization clock into the A8514 at 2.2 MHz. Thus, any Figure 8: Diagram showing a synchronized FSET/SYNC pin and switch
pulse with a duty cycle of 33% to 66% at 2.2 MHz can be used to node; shows VOUT (ch1, 20 V/div.), IOUT (ch2, 200 mA/div.), FSET/SYNC
synchronize the IC. (ch3, 2 V/div.), and SW node (ch4, 20 V/div.), time = 2 µs/div.
The SYNC pulse duty cycle ranges for selected switching fre-
quencies are: VOUT
C1
SYNC Pulse Frequency Duty Cycle Range
(MHz) (%) IOUT
C2
2.2 33 to 66
2 30 to 70
1 15 to 85
C3
0.800 12 to 88 2 MHz operation FSET/SYNC 1 MHz operation
0.600 9 to 91 SW node
ing this period the IC will stop switching for a maximum period t
of about 7 µs to allow the sync detection circuitry to switch over Figure 9: Transition of the SW waveform when the SYNC pulse is detect-
to the externally preset switching frequency. ed. The A8514 switching at 2 MHz, applied SYNC pulse at 1 MHz; shows
VOUT (ch1, 20 V/div.), IOUT (ch2, 200 mA/div.), FSET/SYNC (ch3, 2 V/div.),
If the clock is held low for more than 7 µs, the A8514 will shut and SW node (ch4, 20 V/div.), time = 5 µs/div.
14
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A8514 Fault Tolerant LED Driver
down. In this shutdown mode the IC will stop switching, the If it is necessary to switch over between internal oscillator and
input disconnect switch is open, and the LEDs will stop sinking external sync during operation, ensure the transition takes place
current. To shut down the IC into low power mode, the user must at least 500 ns after the previous PWM = H rising edge. Alterna-
disable the IC using the PWM pin, by keeping the pin low for a tively, execute the switchover during PWM = L only. This restric-
period of 32,750 clock cycles. If the FSET/SYNC pin is released tion does not apply if PWM dimming is not being used.
at any time after 7 µs, the A8514 will proceed to soft start.
To prevent generating a fault when the external SYNC signal is PWM
stuck at low, the circuit shown in Figure 11 can be used. When 500 ns
the external SYNC signal goes low, the A8514 will continue to Ext_Sync
operate normally at the switching frequency set by RFSET. No / FSET 1 V
FAULT flag is generated.
Internal
Clock
t PWSYNCON Internal oscillator External Sync
154 ns
Figure 12: Avoid switching over between Internal Oscillator and External
150 ns
Sync in highlighted region
150 ns
t PWSYNCOFF
T = 454 ns
A8514
External
Synchronization
Signal FSET
220 pF
Schottky RFSET
Barrier 10.2 kΩ
Diode
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VOUT
PWM dimming C1
The LED current can be reduced from the 100% current level
by PWM dimming using the PWM/EN pin. When the PWM/EN
pin is pulled high, the A8514 turns on and all enabled LEDs sink ILED
100% current. When PWM/EN is pulled low, the boost converter
and LED sinks are turned off. The compensation (COMP) pin is C2
floated, and critical internal circuits are kept active. The typi-
cal PWM dimming frequencies fall between 200 Hz and 1 kHz.
Figure 13A to Figure 13D provide examples of PWM switching
behavior. t
Figure 13C: Delay from rising edge of PWM signal to LED current; shows
PWM (ch1, 2 V/div.), and ILED (ch2, 50 mA/div.), time = 200 ns/div.
VOUT PWM
C1
COMP
C2
PWM
C1
C3
ILED
C2
C4
ILED
t t
Figure 13A: Typical PWM diagram showing VOUT, ILED, and COMP pin as Figure 12D. Delay from falling edge of PWM signal to LED current turn off;
well as the PWM signal. PWM dimming frequency is 500 Hz at 50% duty shows PWM (ch1, 2 V/div.), and ILED (ch2, 50 mA/div.), time = 200 ns/div.
cycle; shows VOUT (ch1, 10 V/div.), COMP (ch2, 2 V/div.), PWM (ch3,
5 V/div.), and ILED (ch4, 50 mA/div.), time = 500 µs/div.
16
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A8514 Fault Tolerant LED Driver
Another important feature of the A8514 is the PWM signal to The duty cycle of this signal is inversely proportional to the per-
LED current delay. This delay is typically less than 500 ns, which centage of current that is delivered to the LEDs (Figure 16).
allows greater accuracy at low PWM dimming duty cycles, as
shown in Figure 14. To use this pin for a trim function, the user should set the maxi-
mum output current to a value higher than the required current by
APWM pin at least 5%. The LED ISET current is then trimmed down to the
The APWM pin is used in conjunction with the ISET pin (see appropriate value. Another consideration that also is important
Figure 15. This is a digital signal pin that internally adjusts is the limitation of the user APWM signal duty cycle. In some
the ISET current. When this pin is not used it should be tied to cases, it might be preferable to set the maximum ISET current to
ground. be 25% to 50% higher, thus allowing the APWM signal to have
The typical input signal frequency is between 20 kHz and 1 MHz. duty cycles that are between 25% and 50%.
10 APWM A8514
8
ISET ISET Current
ErrLED (%)
Worst-case
6 Current
Typical Mirror Adjust
4 RISET
2 PWM LED
Driver
0
0.1 1 10 100
PWM Duty Cycle, D (%)
Figure 14: Percentage Error of the LED current versus PWM duty cycle Figure 16: Simplified block diagram of the APWM and ISET circuit.
(at 200 Hz PWM frequency).
80 12
70 10
60
IOUT (mA)
50 8
%ErrLED
IOUT = 80 mA
40 6
30 IOUT = 65 mA
IOUT = 65 mA 4
20 IOUT = 80 mA
10 2
0 0
0 20 40 60 80 100 0 20 40 60 80 100
APWM Duty Cycle (%) APWM Duty Cycle (%)
Figure 15: Output current versus duty cycle; 200 kHz APWM signal. Figure 17: Percentage Error of the LED current versus PWM duty cycle;
200 kHz APWM signal.
17
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As an example, a system that delivers a full LED current of should be enable before or at the same time as the PWM signal.
80 mA per LED would deliver 60 mA of current per LED when This sequence will prevent the light output intensity from chang-
an APWM signal is applied with a duty cycle of 25% (Figure ing during power up of the IC.
18 and Figure 19).
Figure 20 shows the sequencing of the APWM and PWM signal
Although the order in which APWM and the PWM signal are during power-up to prevent inadvertent light intensity changes.
enabled does not matter, when enabling the A8514 into low cur- The full intensity light output with no APWM or PWM dimming
rent output while PWM and APWM dimming, the APWM signal is 80 mA per channel.
ILED
ILED
C1 C1
C2 C2
APWM APWM
PWM/EN PWM/EN
C3 C3
t t
Figure 18: Diagram showing the transition of LED current from 60 mA Figure 20: Diagram showing the transition of LED current from 80 mA
to 80 mA, when a 25% duty cycle signal is removed from the APWM pin. to 60 mA, when a 25% duty cycle signal is applied to the APWM pin;
PWM = 1; shows ILED (ch1, 50 mA/div.), APWM (ch2, 10 V/div.), and PWM = 1; shows ILED (ch1, 50 mA/div.), APWM (ch2, 10 V/div.), and
PWM/EN (ch3, 5 V/div.), time = 500 µs/div. PWM/EN (ch3, 5 V/div.), time = 500 µs/div.
APWM
C1
C1
ILED
IOUT
C2
PWM/EN
C3 C2
APWM
VOUT
C3
PWM/EN
C4
t t
Figure 19: Diagram showing power-up sequencing LED current of 5 mA Figure 21: Transition of output current level when a 50% duty cycle signal
per channel with a 10% duty cycle PWM signal and a 95% duty cycle is applied to the APWM pin, in conjunction with a 50% duty cycle PWM
APWM signal; shows APWM (ch1, 5 V/div.), ILED (ch2, 50 mA/div.), dimming being applied to the PWM pin; shows IOUT (ch1, 50 mA/div.),
PWM/EN (ch3, 5 V/div.), and VOUT (ch4, 10 V/div.), time = 500 µs/div. APWM (ch2, 10 V/div.), and PWM/EN (ch3, 5 V/div.), time = 500 µs/div.
18
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Although the APWM dimming function has a wide frequency maximum. To keep the internal gain amplifier stable, the user
range, if this function is used strictly as an analog dimming should not decrease the current through the RISET resistor to less
function it is recommended to use frequency ranges between than 20 µA
50 and 500 kHz for best accuracy. The frequency range must be
• For a dual-resistor configuration (panel B of Figure 22), the ISET
considered only if the user is not using this function as a closed
loop trim function. Another limitation is that the propagation current is controlled by the following formula:
delay between this APWM signal and IOUT takes several milli-
VISET VDAC – VISET
seconds to change the actual LED current. This effect is shown in ISET = – (5)
Figure 18, Figure 19, and Figure 21. RISET R1
(A)
LED1
R1 C2
DAC A8514
VDAC ISET
GND GND
R ISET PWM/EN
C3
(B)
t
Figure 22: Simplified diagrams of voltage control of ILED: typical applica- Figure 23: Example of the disabling of an LED string when the LED pin
tions using a DAC to control ILED using a single resistor (upper), and dual voltage is increased above 4.6 V; shows IOUT (ch1, 200 mA/div.), LED1
resistors (lower). (ch2, 5 V/div.), and PWM/EN (ch3, 5 V/div.), time = 10 µs/div.
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While the IC is being PWM-dimmed, the IC rechecks the dis- ROVP is the value of the external resistor, in Ω,
abled LED every time the PWM signal goes high, to prevent false
VOVP(th) is the pin OVP trip point found in the Electrical Charac-
tripping of an LED short event. This also allows some self-cor-
teristics table, and
rection if an intermittent LED pin short to VOUT is present.
IOVPH is the current into the OVP pin.
Overvoltage protection
There are several possibilities for why an OVP condition would
The A8514 has overvoltage protection (OVP) and open Schottky
be encountered during operation, the two most common being: a
diode (D1 in Figure 1) protection. The OVP protection has a
disconnected output, and an open LED string. Examples of these
default level of 8.1 V and can be increased up to 53 V by con-
are provided in Figure 24 and Figure 25.
necting resistor ROVP between the OVP pin and VOUT . When
the current into the OVP pin exceeds 199 μA (typical), the OVP Figure 24 illustrates when the output of the A8514 is discon-
comparator goes low and the boost stops switching. nected from load during normal operation. The output voltage
instantly increases up to OVP voltage level and then the boost
The following equation can be used to determine the resistance
stops switching to prevent damage to the IC. If the output is
for setting the OVP level:
drained off, eventually the boost might start switching for a short
ROVP = ( VOUTovp – VOVP(th) ) / IOVPH (6) duration until the OVP threshold is hit again.
where:
Figure 25 displays a typical OVP event caused by an open LED
VOUTovp is the target overvoltage level, string. After the OVP condition is detected, the boost stops
SW node
C2 C2
SW node
PWM
C1 C1
C3 C3
PWM
IOUT IOUT
C4 C4
t t
Figure 24: OVP protection in an output disconnect event; shows VOUT Figure 25: OVP protection in an open LED string event; shows VOUT
(ch1, 10 V/div.), SW node (ch2, 50 V/div.), PWM (ch3, 5 V/div.), and (ch1, 10 V/div.), SW node (ch2, 50 V/div.), PWM (ch3, 5 V/div.), and
IOUT (ch4, 200 mA/div.), time = 1 ms/div. IOUT (ch4, 200 mA/div.), time = 500 µs/div.
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switching, and the open LED string is removed from operation. the UVLO threshold on the VIN pin. Figure 26 illustrates this.
Afterwards VOUT is allowed to fall, and eventually the boost will As soon as the switch node voltage (SW) exceeds 60 V, the IC
resume switching and the A8514 will resume normal operation. shuts down. Due to small delays in the detection circuit, as well
A8514 also has built-in secondary overvoltage protection to as there being no load present, the switch node voltage will rise
protect the internal switch in the event of an open diode condi- above the trip point voltage.
tion. Open Schottky diode detection is implemented by detecting
overvoltage on the SW pin of the device. If voltage on the SW Figure 27 illustrates when the A8514 is being enabled during
pin exceeds the device safe operating voltage rating, the A8514 an open diode condition. The IC goes through all its initial LED
disables and remains latched. To clear this fault, the IC must be detection and then tries to enable the boost, at which point the
shut down either by using the PWM/EN signal or by going below open diode is detected.
Open diode
condition detected
PWM
C1 SW node
C2
VOUT
IOUT
C3
C4
t
Figure 26: OVP protection in an open Schottky diode event, while the IC is
in normal operation; shows PWM (ch1, 5 V/div.), SW node (ch2, 50 V/div.),
VOUT (ch3, 20 V/div.), and IOUT (ch4, 200 mA/div.), time = 1 µs/div.
Open diode
PWM condition detected
C1
SW node
C2
VOUT
C3
IOUT
C4
t
Figure 27: OVP protection when the IC is enabled during an open diode
condition; shows PWM (ch1, 5 V/div.), SW node (ch2, 50 V/div.), VOUT
(ch3, 10 V/div.), and IOUT (ch4, 200 mA/div.), time = 500 µs/div.
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C1 C1
SW node
SW node
C2
IL IL
VOUT VOUT
C2
PWM/EN PWM/EN
C3
C3
C4
C4
t t
Figure 28: Normal operation of the switch node (SW); inductor current (IL) Figure 29: Cycle-by-cycle current limiting; inductor current (yellow trace, IL),
and output voltage (VOUT) for 9 series LEDs in each of four strings con- note reduction in output voltage as compared to normal operation with the
figuration; shows SW node (ch1, 20 V/div.), inductor current IL (ch2, 1 A/ same configuration (Figure 27); shows SW node (ch1, 20 V/div.), inductor
div.), VOUT (ch3, 10 V/div.), and PWM/EN (ch4, 5 V/div.), current IL (ch2, 1 A/div.), VOUT (ch3, 10 V/div.), and PWM/EN (ch4, 5 V/div.),
time = 2 µs/div. time = 2 µs/div.
PWM/EN
C1
FAULT
C2
SW node
C3
IL
C4
Figure 30: Secondary boost switch current limit; when this limit is hit, the
A8514 immediately shuts down; shows PWM (ch1, 5 V/div.), VOUT (ch2,
5 V/div.), SW node (ch3, 50 V/div.), and inductor current IL (ch4, 2 A/div.),
time = 100 ns/div.
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GATE GATE
VSENSE A8514 VSENSE A8514
VIN VIN
Figure 31: Typical circuit (left) with the input disconnect feature implemented, and (right) without the input disconnect feature.
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VDD PWM/EN
The VDD pin provides regulated bias supply for internal circuits. C4
this pin. The internal LDO can deliver no more than 2 mA of cur-
rent with a typical VDD of about 3.5 V, enabling this pin to serve Figure 35: Shutdown using the enable function, showing the 16 ms delay
as the pull-up voltage for the F̄¯Ā¯Ū¯L̄¯T̄¯ pin. between the PWM/EN signal and when the VDD and GATE of the discon-
nect switch turns off; shows GATE (ch1, 10 V/div.), IOUT (ch2, 200 mA/
div.), VDD (ch3, 5 V/div.), and PWM/EN (ch4, 2 V/div.), time = 5 ms/div.
Shutdown
If the PWM/EN pin is pulled low for more than tPWML (32,750
clock cycles), the device enters shutdown mode and clears all
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internal fault registers. As an example, at a 2 MHz clock fre- The possible fault conditions that the device can detect are: Open
quency, it will take approximately 16.3 ms to shut down the IC LED pin, LED pin shorted to ground, shorted inductor, VOUT
into the low power mode (Figure 35). When the A8514 is shut short to ground, SW pin shorted to ground, ISET pin shorted to
down, the IC will disable all current sources and wait until the ground, and input disconnect switch source shorted to ground.
PWM/EN signal goes high to re-enable the IC. If faster shut
down is required, the FSET/SYNC pin can be used. Note the following:
Fault protection during operation • Some of the protection features might not be active during
The A8514 constantly monitors the state of the system to deter- startup, to prevent false triggering of fault conditions.
mine if any fault conditions occur during normal operation. The • Some of these faults will not be protected if the input disconnect
response to a triggered fault condition is summarized in the Fault switch is not being used. An example of this is VOUT short to
Mode table. ground.
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APPLICATION INFORMATION
Design Example for Boost Configuration Then the OVP resistor is:
This section provides a method for selecting component values
ROVP = (VOUT(OVP) – VOVP(th) ) / IOVPH (9)
when designing an application using the A8514. The resulting
design is diagrammed in Figure 36. = (34.7 (V) – 8.1 (V)) / 199 (µA) = 133.67 kΩ
Assumptions: For the purposes of this example, the following are where both IOVPH and VOVP(th) are taken from the Electrical
given as the application requirements: Characteristics table.
• VBAT: 10 to 14 V Chose a value of resistor that is higher value than the calculated
• Quantity of LED channels, #CHANNELS : 4 ROVP . In this case a value of 137 kΩ was selected. Below is the
actual value of the minimum OVP trip level with the selected
• Quantity of series LEDs per channel, #SERIESLEDS : 10
resistor:
• LED current per channel, ILED : 60 mA
VOUT(OVP) = 137 (kΩ) × 199 (µA) + 8.1 (V) = 35.36 V
• Vf at 60 mA: 3.2 V
• fSW : 2 MHz Step 3b: At this point a quick check must be done to see if the
• TA(max): 65°C conversion ratio is acceptable for the selected frequency.
• PWM dimming frequency: 200 Hz, 1% duty cycle Dmaxofboost = 1 – tSWOFFTIME × fSW (10)
= 1 – 68 (ns) × 2.0 (MHz) = 86.4%
Procedure: The procedure consists of selecting the appropriate
configuration and then the individual component values, in an where the minimum off-time (tSWOFFTIME) is found in the Electri-
ordered sequence. cal Characteristics table.
Step 1: Connect LEDs to pins LED1 and LED2. The Theoretical Maximum VOUT is then calculated as:
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Step 4a: Determining the duty cycle, calculated as follows: Step 4d: Double-check to make sure the ½ current ripple is less
than IIN(min):
VIN(min)
D(max) = 1 – (12) IIN(min) > 1/2 ΔIL (18)
VOUT(OVP) + Vd
0.67 A > 0.19 A
10 (V) A good inductor value to use would be 10 µH.
= 1– = 72.04%
35.36 (V) + 0.4 (V) Step 4e: This step is used to verify that there is sufficient slope
compensation for the inductor chosen. The slope compensation
Step 4b: Determining the maximum and minimum input current
value is determined by the following formula:
to the system. The minimum input current will dictate the induc-
3.6 fSW
tor value. The maximum current rating will dictate the current Slope Compensation = = 3.6 A /µs (19)
2 10 6
rating of the inductor. First, the maximum input current, given:
IOUT = #CHANNELS ILED (13) Next insert the inductor value used in the design:
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The reverse voltage rating should be such that during operation The rms current through the capacitor is given by:
condition, the voltage rating of the device is larger than the maxi-
mum output voltage. In this case it is VOUT(OVP). ∆ILused
D(max) + (25)
The peak current through the diode is calculated as: ICOUTrms = IOUT IIN(max) × 12
Idp = IIN(max) + 1/2 ΔILused (23) 1 – D(max)
A capacitor larger than 3.96 µF should be selected due to degra- A good ceramic input capacitor with ratings of 2.2 µF 50 V or
dation of capacitance at high voltages on the capacitor. A ceramic
4.7 µF 50 V will suffice for this application. Corresponding
4.7 µF 50 V capacitor is a good choice to fulfill this requirement.
Corresponding capacitors include: capacitors include:
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Selecting the electrolytic input capacitor according to dimming The required electrolytic capacitor will be:
transient ( ∆I ∆T ) 106 (30)
CIN = = 59.4 µF
During a PWM dimming transient, unless an adequate input ∆VIN
capacitor is used, the input voltage drops significantly. If this issue is important to the customer, it is recommended to
use a 50 V/ 68 µF, low ESR value electrolytic capacitor.
The input capacitor ripple current, ΔI , during the dimming tran-
sient is the same as the input maximum DC current, and can be Step 9: Choosing the input disconnect switch components. Set
calculated by: the input disconnect 1X current limit to 3 A by choosing a sense
resistor. The calculated maximum value of the sense resistor is:
VOUT IOUT
∆I = IINDC(max) = (28)
VIN(min) η RSC(max) = VSENSEtrip / 3.0 (A) (31)
= 0.104 (V) / 3.0 (A) = 0.035 Ω
where VIN(min) is the minimum input voltage, 10 V. The RSC chosen is 0.033 Ω, a standard.
Consider the case where: η = 0.88, VIN(min) = 10 V, The trip point voltage must be:
VOUT = 33.1 V, IOUT = 0.24 A, then:
VADJ = 3.0 (A) × 0.033 (Ω) = 0.099 (V)
ΔI = IINDC(max) RADJ = (VSENSEtrip – VADJ ) / IADJ (typ) (32)
= (33.1 × 0.24) / (10 × 0.88) = 0.9 A RADJ = (0.104 (V) – 0.099 (V)) / 20.3 (µA) = 246.31 Ω
A value of 249 Ω was chosen for this design.
Allowing VIN to drop by ΔVIN = 0.5 V, and considering the feed-
back loop bandwidth, or cross over frequency, to be fC = 30 kHz, Step 10: See appendix A for a detailed description of how to
the input drop will last ΔT, calculated by : calculate RZ, CZ, and CP. Using L1 = 10 µH, COUT = (4.7 µF +
2.2 µF ), and fC = 30 kHz, the calculation results for RZ , CZ , and
ΔT = 1 / fC = 33 × 10–6 (second) (29) CP are: RZ = 499 Ω, CZ = 100 nF, and CP = 320 pF.
VIN RSC D1
10 to 14 V L1 VOUT
0.033 Ω Q1 10 µH 2 A / 60 V
RC CC
CIN ROVP
4.7 µF RADJ 20 Ω 22 nF
137 kΩ COUT1 COUT2
249 Ω GATE SW 4.7 µF 2.2 µF
OVP
VSENSE
VC VIN A8514
CVDD VDD
100 kΩ 0.1 µF PAD LED1
FAULT LED2
10 LEDs each string
PWM/EN LED3
APWM LED4
ISET
COMP
FSET/SYNC CP RZ
RISET
RFSET 320 pF 499 Ω
11 kΩ AGND
10 kΩ PGND
CZ
100 nF
Figure 36: The schematic diagram showing calculated values from the design example above.
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Design Example for SEPIC Configuration of the A8514 is 700 mV. A constant term, 2 V, is added to give
This section provides a method for selecting component values margin to the design due to noise and output voltage ripple.
when designing an application using the A8514 in SEPIC (Sin-
VOUT(OVP) = #SERIESLEDS × Vf + VLED + 2 (V) (34)
gle-Ended Primary-Inductor Converter) circuit. SEPIC topology
has the advantage that it can generate a positive output voltage = 4 × 3.3 (V) + 0.7 (V) + 2 (V) = 15.9 V
either higher or lower than the input voltage. The resulting design Then the OVP resistor is:
is diagrammed in Figure 37. ROVP = (VOUT(OVP) – VOVP(th) ) / IOVPH (35)
Assumptions: For the purposes of this example, the following are = (15.9 (V) – 8.1 (V)) / 0.199 (mA) = 39.196 kΩ
given as the application requirements:
where both IOVPH and VOVP(th) are taken from the Electrical
• VBAT: 6 to 14 V ( VIN(min): 5 V and VIN(max): 16 V ) Characteristics table.
• Quantity of LED channels, #CHANNELS : 4 In this case a value of 39.2 kΩ was selected. Below is the actual
• Quantity of series LEDs per channel, #SERIESLEDS : 4 value of the minimum OVP trip level with the selected resistor:
• LED current per channel, ILED : 60 mA VOUT(OVP) = 39.2 (kΩ) × 0.199 (mA) + 8.1 (V) = 15.9 V
• LED Vf at 60 mA: ≈ 3.3 V
Step 3b: At this point a quick check must be done to determine if
• fSW : 2 MHz the conversion ratio is acceptable for the selected frequency.
• TA(max): 65°C
Dmax = 1 – tSWOFFTIME × fSW (36)
• PWM dimming frequency: 200 Hz, 1% duty cycle
= 1 – 68 (ns) × 2 (MHz) = 86.4%
Procedure: The procedure consists of selecting the appropriate where the minimum off-time (tSWOFFTIME) is found in the Electri-
configuration and then the individual component values, in an cal Characteristics table.
ordered sequence. The Theoretical Maximum VOUT is then calculated as:
Step 1: Connecting LEDs to LEDx pins. If only some of the LED
channels are needed, the unused LEDx pins should be pulled to Dmax (37)
VOUT(max) = VIN(min) – Vd
ground using a 1.5 kΩ resistor. 1 – Dmax
Step 2: Determining the LED current setting resistor RISET: 0.86
= 5 (V) – 0.4 (V) = 30.3 V
RISET = (VISET × AISET) / ILED (33) 1 – 0.86
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tions, due to stringent EMI requirements, the system must operate then:
in continuous conduction mode throughout the whole input volt-
age range. VIN(min) (43)
L= D(max)
ΔIL fSW
Step 4a: Determining the duty cycle, calculated as follows:
5 (V)
VOUT(OVP) + Vd = 0.765 = 7.53 µH
D(max) = 0.254 (A) 2 (MHz)
VIN(min) + VOUT(OVP) + Vd (38)
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The reverse breakdown voltage rating for the output diode in a A capacitor larger than 3.96 µF should be selected due to degra-
SEPIC circuit should be: dation of capacitance at high voltages on the capacitor. Select a
4.7 µF capacitor for this application.
VBD > VOUT(OVP)(max) + VIN(max) (47)
> 15.9 (V) + 16 (V) = 31.9 V The rms current through the capacitor is given by:
because the maximum output voltage in this case is VOUT(OVP). (50)
ICOUTrms = IOUT D(max)
The peak current through the diode is calculated as: 1 – D(max)
Idp = IIN(max) + 1/2 ΔILused (48) 0.765
= 0.240 (A) = 0.433 A
= 0.848 (A) + 0.096 (A) = 0.944 A 1 – 0.765
The third major component in deciding the switching diode is the
reverse current, IR , characteristic of the diode. This characteristic The output capacitor must have a ripple current rating of at least
is especially important when PWM dimming is implemented. 500 mA. The capacitor selected for this design is a 4.7 µF 50 V
During PWM off-time the boost converter is not switching. This capacitor with a 1.5 A current rating.
results in a slow bleeding off of the output voltage, due to leakage Step 8: Selecting input capacitor. The input capacitor must be
currents. IR can be a large contributor, especially at high tempera- selected such that it provides a good filtering of the input voltage
tures. On the diode that was selected in this design, the current waveform. A estimation rule is to set the input voltage ripple,
varies between 1 and 100 µA. It is often advantageous to pick a ΔVIN , to be 1% of the minimum input voltage. The minimum
diode with a much higher breakdown voltage, just to reduce the input capacitor requirements are as follows:
reverse current. Therefore, for this example, pick a diode rated
for a VBD of 60 V, instead of just 40 V. ∆ILused
CIN = (51)
8 fSW ∆VIN
Step 7: Choosing the output capacitors. The output capacitors
must be chosen such that they can provide filtering for both the 0.191 (A)
= = 0.24 µF
boost converter and for the PWM dimming function. The biggest 8 2 (MHz) 0.05 (V)
factors that contribute to the size of the output capacitor are:
PWM dimming frequency and PWM duty cycle. Another major The rms current through the capacitor is given by:
contributor is leakage current, ILK . This current is the combina- ∆ILused
tion of the OVP leakage current as well as the reverse current of CINrms = (52)
the switching diode. In this design the PWM dimming frequency 12
is 200 Hz and the minimum duty cycle is 1%. Typically, the volt- 0.191 (A)
= = 0.055 A
age variation on the output, VCOUT , during PWM dimming must 12
be less than 250 mV, so that no audible hum can be heard. The
capacitance can be calculated as follows: A good ceramic input capacitor with a rating of 2.2 µF 25 V will
suffice for this application.
1 – D(min) (49)
COUT = ILK
fPWM(dimming) V
COUT
1 – 0.01
= 200 (µA) = 3.96 µF
200 (Hz) 0.250 (V)
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Allegro MicroSystems
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Manchester, NH 03103-3353 U.S.A.
www.allegromicro.com
Wide Input Voltage Range, High Efficiency
A8514 Fault Tolerant LED Driver
Step 9: Selecting coupling capacitor CSW. The minimum capaci- The rms current requirement of the coupling capacitor is given
tance of CSW is related to the maximum voltage ripple allowed by:
across it:
ICSWrms = IIN(max) 1 – D(max) (54)
IOUT DMAX D(max)
CSW = (53)
∆VSW fSW
1 – 0.765
0.24 (A) 0.765 = 0.848 (A) = 0.47 A
= = 0.92 µF 0.765
0.1 (V) 2 (MHz)
The voltage rating of the coupling capacitor must be greater than
VIN(max), or 16 V in this case. A ceramic capacitor rated for
2.2 µF 25 V will suffice for this application.
L2
10 µH
VIN L1 CSW D1
RSC
9 to 16 V 10 µH 2.2 µF 2 A / 60 V VOUT
0.033 Ω Q1
RC CC
CIN RADJ 22 nF
2.2 µF 20 Ω ROVP COUT
249 Ω GATE SW 39.2 kΩ 4.7 µF
VSENSE
VC VIN A8514 OVP
VDD
100 kΩ CVDD
PAD LED1
0.1 µF
FAULT LED2
PWM/EN LED3
APWM LED4
ISET
COMP
FSET/SYNC
RISET RFSET CP RZ 150 Ω
11 kΩ 10 kΩ AGND PGND 120 pF
CZ 0.47 µF
Figure 37: Typical application showing SEPIC configuration, with accurate input current sense, and VSENSE
to ground protection.
34
Allegro MicroSystems
955 Perimeter Road
Manchester, NH 03103-3353 U.S.A.
www.allegromicro.com
Wide Input Voltage Range, High Efficiency
A8514 Fault Tolerant LED Driver
0.45
6.50±0.10 0.65
8º 20
0º
20
0.20 1.70
0.09
C
3.00 4.40±0.10 6.40±0.20 3.00 6.10
0.60 ±0.15
A 1.00 REF
1 2
4.12
0.25 BSC 1 2
0.30
0.19 1.20 MAX
0.65 BSC
For Reference Only; not for tooling use (reference MO-153 ACT)
0.15 Dimensions in millimeters
0.00 Dimensions exclusive of mold flash, gate burrs, and dambar protrusions
Exact case and lead configuration at supplier discretion within limits shown
A Terminal #1 mark area
35
Allegro MicroSystems
955 Perimeter Road
Manchester, NH 03103-3353 U.S.A.
www.allegromicro.com
Wide Input Voltage Range, High Efficiency
A8514 Fault Tolerant LED Driver
Revision History
Number Date Description
5 May 20, 2013 Update application information, add appendix A
6 October 1, 2015 Added Figure 11, and renumbered subsequent figures
7 March 1, 2017 Corrected SYNC Input Logic Voltage values on page 6
8 March 13, 2019 Updated Sync section (page 15)
9 March 24, 2020 Minor editorial updates
36
Allegro MicroSystems
955 Perimeter Road
Manchester, NH 03103-3353 U.S.A.
www.allegromicro.com