Sarkar 2013
Sarkar 2013
Optics Communications
journal homepage: www.elsevier.com/locate/optcom
art ic l e i nf o a b s t r a c t
Article history: In this work, we developed an efficient monomodal waveguide with an integrated Mach–Zehnder
Received 14 June 2013 Interferometer (MZI) configuration. We considered two different types of MZI configurations, one with
Received in revised form an angular and another with an S-bend Y-junction. We were able to determine the critical cut-off angle
17 August 2013
for the angular Y-junction and the critical cut-off radius for the S-bend Y-junction. These critical
Accepted 24 August 2013
parameters, typically requiring nanoscale resolution, ensure minimal optical losses, providing an
Available online 11 September 2013
extremely sensitive waveguide system with applications in MEMS-based biosensing.
Keywords: & 2013 Elsevier B.V. All rights reserved.
Mach–Zehnder Interferometer
Y-junction
Monomode
Simulations
Waveguide
Biosensor
0030-4018/$ - see front matter & 2013 Elsevier B.V. All rights reserved.
http://dx.doi.org/10.1016/j.optcom.2013.08.079
D. Sarkar et al. / Optics Communications 311 (2013) 338–345 339
Table 1 the two arms (d) not exceeding 100 μm, since the arms need to be
Propagation losses in the fundamental mode or zeroth order mode (the only mode close to each other to ensure that there is no phase change signal
of light propagating in a monomode waveguide) for different combinations of ridge
at the output due to the difference in variations of temperature,
dimensions.
humidity, etc. in the two arms [11].
w (μm) h Simulation results show that for a constant value of the arm
length L, the Sbend configuration shows less loss than an angular
1 nm 3 nm 4 nm configuration. For example, for L ¼ 22 mm, the loss incurred in
2 1.185 10 7
2.769 10 9
1.353 10 9
Sbend is 0.4 dB/cm whereas for angular it is 0.56 dB/cm. On
3 4.93 10 8 9.401 10 10 1.125 10 10 repeating such simulations for various dimensions, it is found that
4 2.496 10 8 3.87 10 10 1.373 10 10 the best results were seen for angular bends with θ o 2:51 and
5 1.315 10 8 8.977 10 11 3.12 10 10 Sbends with R 415 mm. Fig. 4 compares angular bend structure
6.518 10 9 9.585 10 11 2.487 10 10
6
with different θ values (11 and 3.371). The one with an angle
7 2.849 10 9 2.995 10 10 Bimode
higher than 2.51 is observed to have large loss (nearly 3 dB/cm)
and the presence of a higher order mode in the vertical arms. This
can be explained by a phenomenon called intermodal scattering.
Sharp bends in the MZI design cause intermodal scattering, where
a fraction of power from the fundamental mode is transferred to a
higher order mode [6]. The appearance of a higher order mode in
the waveguide just after the diverging (or input) Y-junction can
explain why the loss distribution is not symmetric (refer to Fig. 4
(ii)(b)). Higher order modes are much more susceptible to bend
losses as compared to the fundamental mode and therefore
the losses are much higher in the waveguide region just after
the output Y-junction than in the section just before the input
Y-junction.
Decreasing θ to a much lower value and increasing R to a much
higher value is constrained by the size of the chip. One possible
solution is to decrease d and bring the arms closer. However, the
two MZI arms cannot be brought closer than 70 μm as cross
coupling of signal between the two arms can occur.
Fig. 4. (i) a) Transverse electric field through the entire length of the MZI configuration (θ ¼ 11). (b) Variation of power with length; (ii) (a) Transverse electric field through
the entire length of the MZI configuration ðθ ¼ 3:371Þ. (b) Variation of power with length.
NanoFab facility and the Micro and Nano-scale Transport Labora- 5.1. Thickness of layers and refractive indices
tory at the University of Alberta.
First, the Si wafers are cleaned in a piranha solution with Ellipsometry is used for determining the thickness and more
3 parts H2SO4 and 1 part H2O2, for 15 min. Then in order to obtain importantly the refractive indices of the SiO2 cladding layers and
a high quality oxide layer with high uniformity to form the lower the Si3N4 core layer. This system measures the thickness optically
cladding, thermal oxidation is preferred since it is very important and hence is a non-destructive technique. The thermally grown
to have maximum uniformity before deposition of the core Si3N4 SiO2 layer (refer to Section 4) is measured using an ellipsometer
layer. Low Pressure Chemical Vapor Deposition (LPCVD) of Si3N4 is and it revealed a thickness of 1:3525 7 0:0007 μm. The refractive
performed on the thermally oxidized Si wafer. LPCVD nitride can index was found to be 1.4668 70.0012 which is close to the target
easily be deposited in a very pure and uniform way which leads to refractive index of 1.46. The LPCVD nitride (refer to Section 4)
high thermal stability and low etch rates [44]. Low etch rate is an thickness was 252.6 70.3 nm with a refractive index of 2.0844 7
essential advantage of LPCVD because it can allow etching of 0.0051 which is again close to the target refractive index of 2. The
features with depths as small as 4 nm. Then, in the most important upper cladding layer was found to be 1:9964 70:0030 μm thick
step of the fabrication procedure, photolithography and Reactive with a refractive index of 1.4631 70.0012. All measurements were
Ion Etching (RIE) are used to print the MZI configuration on the taken in the spectral range of 0:3 μm–0:8 μm.
Si3N4 core. The mask used for the photolithographic step was
designed using a mask generation software from Tanner EDA, 5.2. AFM
L-Edit. The SiO2 upper cladding layer does not demand too much
of uniformity but it is very essential that the stress induced by the The ridge dimensions are measured using Atomic Force Micro-
deposition of a thick upper cladding layer is well controlled. Hence scopy (AFM). These AFM measurements are done after the first RIE
Plasma Enhanced Chemical Vapor Deposition (PECVD) process was step. Fig. 7 shows 2-D and 3-D images of a 50 50 μm area on the
used for forming the upper cladding layer. MZI chip where the diverging Y-junction is located. The RMS
Till this point, a complete MZI waveguide with two reference roughness was also calculated over various sections of the chip
arms has been fabricated. In order to create a sensing area on one before and after PECVD of the SiO2 upper cladding layer and it was
of the arms (to be called as the sensor arm), another photolitho- found to be in the range of 0.5–0.6 nm, which is acceptable.
graphic and RIE step is performed. In this case, the SiO2 upper
cladding layer is selectively etched up to the core layer over a
20 mm by 100 μm area, thereby exposing the core-cladding 6. Experimental setup
boundary where the intensity of the evanescent field is the
strongest (refer Fig. 1). Once the chips were fabricated, the end Fig. 8 is a picture of the experimental setup used for analyzing
faces were polished using diamond lapping and polishing films the fabricated MZI chips. Light from a He–Ne laser (633 nm) is
(15 μm–0:1 μm). This step was essential to prevent scattering of coupled onto the MZI chip using a 40 objective lens. Light
light at the input and output of the waveguide. emitted by the chip is directly coupled into a multimode fiber
D. Sarkar et al. / Optics Communications 311 (2013) 338–345 343
Fig. 6. (a) Schematic of an MZI configuration. (b) Microscopic image of the diverging Y-junction (showing θ ¼ 11). (c) Microscopic image of a portion of the sensor area
revealing the silicon nitride core layer.
Fig. 7. (a) 2-D AFM image of a diverging Y-junction scanned over an area of 50 50 μm on the MZI chip. (b) 3-D image of the Y-junction.
10 log ðP in =P out Þ
dB=cm ¼ ð18Þ
L
where, Pin and Pout are the input and output powers of the
waveguide, respectively, and L is the length of the whole chip
(30 mm).
Initially, the power at the input end of the waveguide (or the
output from the laser), Pin, was compared to the power emanated
by the waveguide, Pout. It is to be noted that, during experiments,
the output from the laser is in the order of milliwatts (mW)
whereas the output from the waveguide is in microwatts ðμWÞ.
This indicates that a fair amount of light from the laser failed to
enter the waveguide thereby creating anomalies in the loss
analysis. Therefore, instead of measuring P in as the power from
the laser, the waveguide is cut into half and the corresponding
output power from the chip of length L/2 is taken to be Pin while
Fig. 8. Laboratory setup of our experiment used for power measurements of the
Pout remained the output power from an entire chip. Using this in
intensity of the light emanating from the waveguide.
Eq. (18) and making the length half of its original value
ðL ¼ 15 mmÞ, the actual loss per cm of the waveguide was
(62:6 μm core diameter). The multimode fiber transmits the light determined. Fig. 9(a) and (b) shows the image of monomodal
into a photodiode for power measurements. The chip is placed on light field at the output end of the entire chip and at the section
an XYZ stage with a piezo controlled resolution of 20 nm. In order cut across the mid-way between the input and the output
to align the laser light into the sub-wavelength core (250 nm), Y-junctions, respectively. The two spots in such mid-section
a CMOS camera, connected to a PC, is placed above the chip to (Fig. 9(b)) are due to light emitting from the two arms (reference
simplify the optical alignment of the device. and sensing) of the fabricated MZI.
344 D. Sarkar et al. / Optics Communications 311 (2013) 338–345
Fig. 9. CMOS camera images, through a 5 objective, of the output end of (a) the full chip and (b) the mid-section of the chip. The images show a monomode light field.
The two bright spots in (b) refers to the light emitting from the reference and the sensor arms of the MZI chip.
Acknowledgments
The losses calculated range from 0.1 dB/cm to 0.7 dB/cm which [1] S. Chou, P. Krauss, Microelectronic Engineering 35 (1997) 237.
[2] R. Soref, J. Larenzo, IEEE Journal of Quantum Electronics 22 (1986) 873.
follow the simulation results very closely. A comparison of the loss
[3] A. Rickman, G. Reed, F. Namavar, Journal of Lightwave Technology 12 (1994) 1771.
values calculated through simulations and experiments for differ- [4] A. Crunteanu, M. Pollnau, G. Jänchen, C. Hibert, P. Hoffmann, R. Salathé,
ent MZI configurations is given in Fig. 10. Propagation loss (dB/cm) R. Eason, C. Grivas, D. Shepherd, Applied Physics B 75 (2002) 15.
values are plotted against increasing R values for Sbend (Fig. 10(a)) [5] R. Bruck, E. Melnik, P. Muellner, R. Hainberger, M. Lämmerhofer, Biosensors
and Bioelectronics 26 (2011) 3832.
and θ values for angular (Fig. 10(b)) MZI configurations. The chips [6] R.R. Syms, J.R. Cozens, Optical Guided Waves and Devices, McGraw-Hill,
used for loss measurements do not have a sensing area etched on London, 1992.
them. During biosensing experiments, the etched sensor area [7] A. Rohrbach, Biophysical Journal 78 (2000) 2641.
[8] F. Brosinger, H. Freimuth, M. Lacher, W. Ehrfeld, E. Gedig, A. Katerkamp,
would encounter losses due to the discontinuity in the upper F. Spener, K. Cammann, Sensors and Actuators B: Chemical 44 (1997) 350.
cladding. However, as biomolecules start immobilizing on the [9] O. Parriaux, G. Veldhuis, Journal of Lightwave Technology 16 (1998) 573.
sensor surface, it is expected that the losses would start to [10] F. Prieto, B. Sepulveda, A. Calle, A. Llobera, C. Domínguez, A. Abad, A. Montoya,
L. Lechuga, Nanotechnology 14 (2003) 907.
decrease with an increase in concentration of the in situ biomo- [11] L.M. Lechuga, K. Zinoviev, L. Fernandez, J. Elizalde, O. Hidalgo, C. Dominguez,
lecule solution. Proceedings of SPIE 7220 (2009) 72200L. (1-8).
[12] L. Spiekman, Y. Oei, E. Metaal, F. Green, I. Moerman, M. Smit, IEEE Photonics
Technology Letters 6 (1994) 1008.
[13] L.B. Soldano, E.C. Pennings, Journal of Lightwave Technology 13 (1995) 615.
7. Conclusions [14] C. Themistos, B. Rahman, Applied Optics 41 (2002) 7037.
[15] C.P. Wen, IEEE Transactions on Microwave Theory and Techniques 18 (1970) 318.
[16] R. Forber, E. Marom, IEEE Journal of Quantum Electronics 22 (1986) 911.
In this study, we have performed simulations for determining
[17] M. Izutsu, Y. Nakai, T. Sueta, Optics Letters 7 (1982) 136.
waveguide dimensions for monomodal propagation of light using [18] L.H. Frandsen, P.I. Borel, Y. Zhuang, A. Harpøth, M. Thorhauge, M. Kristensen,
RSOFT CADTM . Extensive theoretical analysis for mode calculation W. Bogaerts, P. Dumon, R. Baets, V. Wiaux, et al., Optics Letters 29 (2004) 1623.
in waveguides has been shown. Two aspects of the design of MZI [19] A. Liu, L. Liao, D. Rubin, J. Basak, Y. Chetrit, H. Nguyen, R. Cohen, N. Izhaky,
M. Paniccia, Semiconductor Science and Technology 23 (2008) 064001. (1–7).
waveguides are taken into consideration. First, a monomodal [20] R. Heideman, R. Kooyman, J. Greve, Sensors and Actuators B: Chemical 10
waveguide was designed. Numerical solutions of the theoretical (1993) 209.
D. Sarkar et al. / Optics Communications 311 (2013) 338–345 345
[21] J. Harris, R. Shubert, J. Polky, Journal of the Optical Society of America 60 [33] D. Marcuse, Journal of the Optical Society of America 66 (1976) 216.
(1970) 1007. [34] M. Jonasz, G. Fournier, D. Stramski, Applied Optics 36 (1997) 4214.
[22] D. Esinenco, S. Psoma, M. Kusko, A. Schneider, R. Muller, Reviews on Advanced [35] A.E. Balaev, K.N. Dvoretski, V.A. Doubrovski, Proceedings of SPIE 5068 (2003) 375.
Materials Science 10 (2005) 295. [36] R. Scarmozzino, A. Gopinath, R. Pregla, S. Helfert, IEEE Journal on Selected
[23] R. Műller, P. Obreja, M. Kusko, D. Esinenco, C. Tibeica, G. Conache, L. Buia, Topics in Quantum Electronics 6 (2000) 150.
D. Apostol, V. Damian, M. Mateescu, et al., Proceedings of SPIE 5972 (2005) [37] P. Moar, S. Huntington, J. Katsifolis, L. Cahill, A. Roberts, K. Nugent, Y. Iino,
59720Z. (1-6). P. Davis, G. Margaritondo, G. Tromba, et al., Journal of Applied Physics 85
[24] R. Bruck, R. Hainberger, Proceedings of SPIE 7138 (2008) 71380N. (1–7). (1999) 20.
[25] K. Zinoviev, L.G. Carrascosa, J. Sánchez del Río, B. Sepúlveda, C. Domínguez, [38] A.W. Snyder, J. Love, Optical Waveguide Theory, Springer, 1983.
L.M. Lechuga, Advances in Optical Technologies (2008). [39] M. Feit, J. Fleck Jr, et al., Applied Optics 18 (1979) 2843.
[26] B. Sepulveda, J.S. Del Rio, M. Moreno, F. Blanco, K. Mayora, C. Domínguez, [40] M. Feit, J. Fleck Jr, et al., Applied Optics 19 (1980) 1154.
L.M. Lechuga, Journal of Optics A 8 (2006) S561. [41] F.W. Olver, D.W. Lozier, R.F. Boisvert, C.W. Clark, NIST Handbook of Mathematical
[27] P. Nellen, K. Tiefenthaler, W. Lukosz, Sensors and Actuators A 15 (1988) 285. Functions, Cambridge University Press, 2010.
[28] A. Sloper, J. Deacon, M. Flanagan, Sensors and Actuators B: Chemical 1 (1990) 589. [42] K. Tiefenthaler, W. Lukosz, Journal of the Optical Society of America B 6 (1989) 209.
[29] W. Lukosz, Biosensors and Bioelectronics 6 (1991) 215. [43] D. Jones, Biomedical Sensors, Momentum Pr, 2010.
[30] P. Nellen, W. Lukosz, Biosensors and Bioelectronics 8 (1993) 129. [44] K.R. Williams, K. Gupta, M. Wasilik, Journal of Microelectromechanical
[31] R. Heideman, P. Lambeck, Sensors and Actuators B: Chemical 61 (1999) 100. Systems 12 (2003) 761.
[32] B. Pal, Fundamentals of Fibre Optics in Telecommunication and Sensor [45] N. Grote, H. Venghaus, Fibre Optic Communication Devices, Springer, 2001.
Systems, Bohem Press, 1992.