CM450DX-24S

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
www.pwrx.com Dual IGBT
NX-Series Module
450 Amperes/1200 Volts

AR AP
AS
A
D AN
AQ
E
J F J DETAIL "A"
G S
Y
H (4 PLACES) AE
L AF
46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25

Q K
ST 47 24
U AA B
AZ R Z AB

S T 48 23
U
Q DETAIL "B" AG
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22
AY
W
X N P AJ Description:
V K K AC (4 PLACES) AH
M
AD
Powerex IGBT Modules are
AT
AL
AU designed for use in switching
AV
AM AW
applications. Each module
AK C
DETAIL "A"
consists of two IGBT Transistors
Tolerance Otherwise Specified (mm) C2E1(24) C2E1(23) AX
in a half-bridge configuration with
Division of Dimension Tolerance
0.5 to 3 ±0.2 Cs1(22)
Th
NTC each transistor having a reverse-
over 3 to 6 ±0.3
over 6 to 30 ±0.5
Tr2
Di2 Di1
Tr1
Es1(16)
G1(15)
TH1
(1)
TH2
(2)
connected super-fast recovery
over 30 to 120 ±0.8
over 120 to 400 ±1.2
The tolerance of size between
G2(38)
Es2(39) DETAIL "B" free-wheel diode. All components
terminals is assumed to ±0.4
E2 C1 and interconnects are isolated from
(47) (48)
the heat sinking baseplate, offering
simplified system assembly and
Outline Drawing and Circuit Diagram thermal management.
Dimensions Inches Millimeters Dimensions Inches Millimeters Features:
A 5.98 152.0 AA 1.97±0.02 50.0±0.5 £ Low Drive Power
B 2.44 62.0 AB 2.26 57.5 £ Low VCE(sat)
C 0.67+0.04/-0.02 17.0+1.0/-0.5 AC 0.22 Dia. 5.5 Dia. £ Discrete Super-Fast Recovery
D 5.39 137.0 AD 0.6 15.0 Free-Wheel Diode
E 4.79 121.7 AE 0.51 13.0 £ Isolated Baseplate for Easy
F 4.33±0.02 110.0±0.5 AF 0.27 7.0 Heat Sinking
G 3.89 99.0 AG 0.03 0.8
H 3.72 94.5 AH 0.81 20.5 Applications:
J 0.53 13.5 AJ 0.12 3.0 £ AC Motor Control
K 0.15 3.81 AK 0.14 3.5 £ Motion/Servo Control
L 1.64 41.66 AL 0.26 6.5 £ Photovoltaic/Fuel Cell
M 0.30 7.75 AM 0.53 13.5 Ordering Information:
N 1.95 49.53 AN 0.15 3.81 Example: Select the complete
P 0.9 22.86 AP 0.05 1.15 module number you desire from
Q 0.55 14.0 AQ 0.025 0.65 the table below -i.e.
R 0.87 22.0 AR 0.29 7.4 CM450DX-24S is a 1200V (VCES),
S 0.67 17.0 AS 0.05 1.2 450 Ampere Dual IGBT Power
T 0.48 12.0 AT 0.17 Dia. 4.3 Dia. Module.
U 0.24 6.0 AU 0.102 Dia. 2.6 Dia.
V 0.16 4.2 AV 0.088 Dia. 2.25 Dia. Type Current Rating VCES
W 0.37 6.5 AW 0.12 3.0 Amperes Volts (x 50)
X 0.83 21.14 AX 0.49 12.5 CM 450 24
Y M6 M6 AY 0.14 3.75
Z 1.53 39.0 AZ 2.13 54.2

02/14 Rev. 6 1
 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com

CM450DX-24S
Dual IGBT NX-Series Module
450 Amperes/1200 Volts

Absolute Maximum Ratings, Tj = 25°C unless otherwise specified

Inverter Part IGBT/FWDi

Characteristics Symbol Rating Units
Collector-Emitter Voltage (VGE = 0V) VCES 1200 Volts
Gate-Emitter Voltage (VCE = 0V) VGES ±20 Volts
Collector Current (DC, TC = 119°C)*2,*4 IC 450 Amperes
Collector Current (Pulse, Repetitive)*3 ICRM 900 Amperes
Total Power Dissipation (TC = 25°C)*2,*4 Ptot 3405 Watts
Emitter Current (DC)*2 IE *1 450 Amperes
Emitter Current (Pulse, Repetitive)*3 IERM*1 900 Amperes

Module
Characteristics Symbol Rating Units
Isolation Voltage (Terminals to Baseplate, RMS, f = 60Hz, AC 1 minute) VISO 2500 Volts
Maximum Junction Temperature, Instantaneous Event (Overload) Tj(max) 175 °C
Maximum Case Temperature*4 TC(max) 125 °C
Operating Junction Temperature, Continuous Operation (Under Switching) Tj(op) -40 to +150 °C
Storage Temperature Tstg -40 to +125 °C
*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling
0 0
diode (FWDi). 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25

*2 Junction temperature (Tj) should not increase beyond maximum junction

temperature (Tj(max)) rating.
47 24

27.7 26.3
Di2 Tr2 Di2
*3 Pulse width and repetition rate should be such that device junction temperature (Tj) 29.2 Tr2 Di2 Tr2 27.8

does not exceed Tj(max) rating. 43.0 42.4

43.4 48
Di1 Tr1 Di1 Tr1 Tr1 23
43.9
Di1
*4 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface 51.5 Th
(mounting side) of the baseplate and the heatsink side just under the chips. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22

Refer to the figure to the right for chip location.

LABEL SIDE
The heatsink thermal resistance should be measured just under the chips.
0

22.5

35.6

48.8

73.0

86.1

99.2
23.3

Tr1 / Tr2: IGBT, Di1 / Di2: FWDi, Th: NTC Thermistor

Each mark points to the center position of each chip.

2 02/14 Rev. 4
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com

CM450DX-24S
Dual IGBT NX-Series Module
450 Amperes/1200 Volts

Electrical Characteristics, Tj = 25°C unless otherwise specified

Inverter Part IGBT/FWDi
Characteristics Symbol Test Conditions Min. Typ. Max. Units

Collector-Emitter Cutoff Current ICES VCE = VCES, VGE = 0V — — 1.0 mA

Gate-Emitter Leakage Current IGES VGE = VGES, VCE = 0V — — 0.5 µA
Gate-Emitter Threshold Voltage VGE(th) IC = 45mA, VCE = 10V 5.4 6.0 6.6 Volts
Collector-Emitter Saturation Voltage VCE(sat) IC = 450A, VGE = 15V, Tj = 25°C*5 — 1.80 2.25 Volts
(Terminal) IC = 450A, VGE = 15V, Tj = 125°C*5 — 2.00 — Volts
IC = 450A, VGE = 15V, Tj = 150°C*5 — 2.05 — Volts
Collector-Emitter Saturation Voltage VCE(sat) IC = 450A, VGE = 15V, Tj = 25°C*5 — 1.70 2.15 Volts
(Chip) IC = 450A, VGE = 15V, Tj = 125°C*5 — 1.90 — Volts
IC = 450A, VGE = 15V, Tj = 150°C*5 — 1.95 — Volts
Input Capacitance Cies — — 45 nF
Output Capacitance Coes VCE = 10V, VGE = 0V — — 9.0 nF
Reverse Transfer Capacitance Cres — — 0.75 nF
Gate Charge QG VCC = 600V, IC = 450A, VGE = 15V — 1050 — nC
Turn-on Delay Time td(on) — — 800 ns
Rise Time tr VCC = 600V, IC = 450A, VGE = ±15V, — — 200 ns
Turn-off Delay Time td(off) RG = 0Ω, Inductive Load — — 600 ns
Fall Time tf — — 300 ns
Emitter-Collector Voltage VEC*1 IE = 450A, VGE = 0V, Tj = 25°C*5 — 1.80 2.25 Volts
(Terminal) IE = 450A, VGE = 0V, Tj = 125°C*5 — 1.80 — Volts
IE = 450A, VGE = 0V, Tj = 150°C*5 — 1.80 — Volts
Emitter-Collector Voltage VEC *1 IE = 450A, VGE = 0V, Tj = 25°C*5 — 1.70 2.15 Volts
(Chip) IE = 450A, VGE = 0V, Tj = 125°C*5 — 1.70 — Volts
IE = 450A, VGE = 0V, Tj = 150°C*5 — 1.70 — Volts
Reverse Recovery Time trr*1 VCC = 600V, IE = 450A, VGE = ±15V — — 300 ns
Reverse Recovery Charge Qrr *1 RG = 0Ω, Inductive Load — 24 — µC
Turn-on Switching Energy per Pulse Eon VCC = 600V, IC = IE = 450A, VGE = ±15V — 54.9 — mJ
Turn-off Switching Energy per Pulse Eoff RG = 0Ω, Tj = 150°C — 48.0 — mJ
Reverse Recovery Energy per Pulse Err*1 Inductive Load — 32.4 — mJ
Internal Lead Resistance RCC' + EE' Main Terminals-Chip, — — 0.7 mΩ
Per Switch,TC = 25°C*4
Internal Gate Resistance rg Per Switch — 4.3 — Ω
*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling
diode (FWDi). 0 0
46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25

*4 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips. 47 24
26.3
27.7 Di2 Tr2 Di2
Refer to the figure to the right for chip location. 29.2 Tr2 Di2 Tr2 27.8
The heatsink thermal resistance should be measured just under the chips. 43.0 42.4
43.4 48
Di1 Tr1 Di1 Tr1 Tr1 23
43.9
*5 Pulse width and repetition rate should be such as to cause negligible temperature rise. Di1
51.5 Th
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22

LABEL SIDE
0

22.5

35.6

48.8

73.0

86.1

99.2
23.3

Tr1 / Tr2: IGBT, Di1 / Di2: FWDi, Th: NTC Thermistor

Each mark points to the center position of each chip.

02/14 Rev. 6 3
 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com

CM450DX-24S
Dual IGBT NX-Series Module
450 Amperes/1200 Volts

Electrical Characteristics, Tj = 25°C unless otherwise specified (continued)

NTC Thermistor Part
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Zero Power Resistance R25 TC = 25°C*4 4.85 5.00 5.15 kΩ
Deviation of Resistance ∆R/R TC = 100°C*4, R100 = 493Ω -7.3 — +7.8 %
B Constant B(25/50) Approximate by Equation*6 — 3375 — K
Power Dissipation P25 TC = 25°C*4 — — 10 mW

Thermal Resistance Characteristics

Thermal Resistance, Junction to Case*4 Rth(j-c)Q IGBT Part — — 44 K/kW
Thermal Resistance, Junction to Case*4 Rth(j-c)D FWDi Part — — 78 K/kW
Contact Thermal Resistance, Rth(c-f) Thermal Grease Applied, — 15 — K/kW
Case to Heatsink*4 Per 1 Module*7

Mechanical Characteristics
Mounting Torque Mt Main Terminals, M6 Screw 31 35 40 in-lb
Mounting Torque Ms Mounting to Heatsink, M5 Screw 22 27 31 in-lb
Creepage Distance ds Terminal to Terminal 11.26 — — mm
Terminal to Baseplate 12.46 — — mm
Clearance da Terminal to Terminal 10.00 — — mm
Terminal to Baseplate 10.12 — — mm
Weight m — 350 — Grams
Flatness of Baseplate ec On Centerline X, Y*8 ±0 — ±100 µm

Recommended Operating Conditons, Ta = 25°C

DC Supply Voltage VCC Applied Across C1-E2 Terminals — 600 850 Volts
Gate-Emitter Drive Voltage VGE(on) Applied Across 13.5 15.0 16.5 Volts
G1-Es1/G2-Es2 Terminals
External Gate Resistance RG Per Switch 0 — 10 Ω
*4 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface
0 0
(mounting side) of the baseplate and the heatsink side just under the chips. 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25

Refer to the figure to the right for chip location.

The heatsink thermal resistance should be measured just under the chips. 27.7
47 24
26.3
Di2 Tr2 Di2
R25 1 1 29.2 Tr2 Di2 Tr2 27.8
*6 B(25/50) = In( )/( – ) 43.0 42.4
R50 T25 T50 43.4 48
Di1 Tr1 Di1 Tr1
Di1
Tr1 23
43.9
R25; Resistance at Absolute Temperature T25 [K]; T25 = 25 [°C] + 273.15 = 298.15 [K] 51.5 Th
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22

R50; Resistance at Absolute Temperature T50 [K]; T50 = 50 [°C] + 273.15 = 323.15 [K]
*7 Typical value is measured by using thermally conductive grease of λ = 0.9 [W/(m • K)]. LABEL SIDE
0

22.5

35.6

48.8

73.0

86.1

99.2

*8 Baseplate (mounting side) flatness measurement points (X, Y) are shown in the figure below.
23.3
– : CONCAVE
+ : CONVEX

Tr1 / Tr2: IGBT, Di1 / Di2: FWDi, Th: NTC Thermistor

Each mark points to the center position of each chip.
Y
MOUNTING
X SIDE

MOUNTING SIDE – : CONCAVE

MOUNTING SIDE + : CONVEX

4 02/14 Rev. 4
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com

CM450DX-24S
Dual IGBT NX-Series Module
450 Amperes/1200 Volts

COLLECTOR-EMITTER
OUTPUT CHARACTERISTICS SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL) (TYPICAL)
900 3.5
VGE = 15 Tj = 25°C
VGE = 15V
800

SATURATION VOLTAGE, VCE(sat), (VOLTS)

20V 13.5 3.0 Tj = 25°C
COLLECTOR CURRENT, IC, (AMPERES)

12
700 Tj = 125°C
2.5 Tj = 150°C

COLLECTOR-EMITTER
600
11 2.0
500
400 1.5
10
300
1.0
200
9
0.5
100
0 0
0 2 4 6 8 10 0 100 200 300 400 500 600 700 800 900
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) COLLECTOR-CURRENT, IC, (AMPERES)

COLLECTOR-EMITTER FREE-WHEEL DIODE

SATURATION VOLTAGE CHARACTERISTICS FORWARD CHARACTERISTICS
(TYPICAL) (TYPICAL)
10 103
Tj = 25°C
SATURATION VOLTAGE, VCE(sat), (VOLTS)

EMITTER CURRENT, IE, (AMPERES)

8
COLLECTOR-EMITTER

IC = 900A
6
IC = 450A
102
4
IC = 180A VGE = 15V
Tj = 25°C
2
Tj = 125°C
Tj = 150°C
0 101
6 8 10 12 14 16 18 20 0 0.5 1.0 1.5 2.0 2.5 3.0
GATE-EMITTER VOLTAGE, VGE, (VOLTS) EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)

02/14 Rev. 6 5
 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com

CM450DX-24S
Dual IGBT NX-Series Module
450 Amperes/1200 Volts

HALF-BRIDGE
CAPACITANCE VS. VCE SWITCHING CHARACTERISTICS
(TYPICAL) (TYPICAL)
102 103
Cies td(off)
CAPACITANCE, Cies, Coes, Cres, (nF)

td(on)

SWITCHING TIME, (ns)

101
tf

Coes 102

100
VCC = 600V
VGE = ±15V
Cres tr
RG = 0Ω
VGE = 0V Tj = 125°C
Inductive Load
10-1 101
10-1 100 101 102 101 102 103
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) COLLECTOR CURRENT, IC, (AMPERES)

HALF-BRIDGE SWITCHING TIME VS.

SWITCHING CHARACTERISTICS GATE RESISTANCE
(TYPICAL) (TYPICAL)
103 103
td(off)
tf td(off) td(on)
tr
td(on)
tf
SWITCHING TIME, (ns)

SWITCHING TIME, (ns)

102 102

VCC = 600V VCC = 600V

VGE = ±15V VGE = ±15V
tr IC = 450A
RG = 0Ω
Tj = 150°C Tj = 125°C
Inductive Load Inductive Load
101 101
101 102 103 10-1 100 101 102
COLLECTOR CURRENT, IC, (AMPERES) EXTERNAL GATE RESISTANCE, RG, (Ω)

6 02/14 Rev. 4
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com

CM450DX-24S
Dual IGBT NX-Series Module
450 Amperes/1200 Volts

SWITCHING TIME VS.

GATE RESISTANCE REVERSE RECOVERY CHARACTERISTICS
(TYPICAL) (TYPICAL)
103 103
td(off)
td(on)

REVERSE RECOVERY, Irr (A), trr (ns)

tr
tf
SWITCHING TIME, (ns)

102 102 VCC = 600V

VGE = ±15V
RG = 0Ω
VCC = 600V
Tj = 125°C
VGE = ±15V
Inductive Load
IC = 450A
Tj = 150°C Irr
Inductive Load trr
101 101
10-1 100 101 102 101 102 103
EXTERNAL GATE RESISTANCE, RG, (Ω) EMITTER CURRENT, IE, (AMPERES)

REVERSE RECOVERY CHARACTERISTICS

(TYPICAL) GATE CHARGE VS. VGE
103 20
VCC = 600V
GATE-EMITTER VOLTAGE, VGE, (VOLTS)

IC = 450A
REVERSE RECOVERY, Irr (A), trr (ns)

15

102 VCC = 600V 10

VGE = ±15V
RG = 0Ω
Tj = 150°C
5
Inductive Load
Irr
trr
101 0
101 102 103 0 500 1000 1500
EMITTER CURRENT, IE, (AMPERES) GATE CHARGE, QG, (nC)

02/14 Rev. 6 7
 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com

CM450DX-24S
Dual IGBT NX-Series Module
450 Amperes/1200 Volts

HALF-BRIDGE SWITCHING HALF-BRIDGE SWITCHING

CHARACTERISTICS (TYPICAL) CHARACTERISTICS (TYPICAL)
102 102
VCC = 600V VCC = 600V
VGE = ±15V VGE = ±15V
REVERSE RECOVERY ENERGY, Err, (mJ)

REVERSE RECOVERY ENERGY, Err, (mJ)

SWITCHING ENERGY, Eon, Eoff, (mJ)

SWITCHING ENERGY, Eon, Eoff, (mJ)

RG = 0Ω RG = 0Ω
Tj = 125°C Tj = 150°C

101 101

Eon Eon
Eoff Eoff
Inductive Load, Per Pulse Err Inductive Load, Per Pulse Err
100 100
101 102 103 101 102 103
COLLECTOR CURRENT, IC, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES)
EMITTER CURRENT, IE, (AMPERES) EMITTER CURRENT, IE, (AMPERES)

HALF-BRIDGE SWITCHING HALF-BRIDGE SWITCHING

CHARACTERISTICS (TYPICAL) CHARACTERISTICS (TYPICAL)
103 103
VCC = 600V VCC = 600V
VGE = ±15V
REVERSE RECOVERY ENERGY, Err, (mJ)

REVERSE RECOVERY ENERGY, Err, (mJ)

VGE = ±15V
SWITCHING ENERGY, Eon, Eoff, (mJ)

SWITCHING ENERGY, Eon, Eoff, (mJ)

IC/IE = 450A IC/IE = 450A

Tj = 125°C Tj = 150°C
102 102

101 101
Eon Eon
Eoff Eoff
Inductive Load, Per Pulse Err Inductive Load, Per Pulse Err
100 100
10-1 100 101 102 10-1 100 101 102
GATE RESISTANCE, RG, (Ω) GATE RESISTANCE, RG, (Ω)

8 02/14 Rev. 4
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com

CM450DX-24S
Dual IGBT NX-Series Module
450 Amperes/1200 Volts

TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS TEMPERATURE CHARACTERISTICS
(MAXIMUM) (NTC THERMISTOR PART - TYPICAL)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c')

100 102
Zth = Rth • (NORMALIZED VALUE)

RESISTANCE, R (kΩ)
10-1 101
Single Pulse
TC = 25°C
Per Unit Base =
Rth(j-c) =
10-2 44 K/kW 100
(IGBT)
Rth(j-c) =
78 K/kW
(FWDi)
10-3 10-1
10-5 10-4 10-3 10-2 10-1 100 101 -50 -25 0 25 50 75 100 125
TEMPERATURE, T (°C)
TIME, (s)

02/14 Rev. 6 9