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Electronics II 2021 Ex3

The document outlines the exam structure and questions for Electronics II, focusing on circuit analysis involving transistors and current sources. It includes problems related to small-signal analysis, PMOS current mirrors, and multi-transistor current sources, requiring derivations, circuit equations, and calculations. The exam is conducted by Prof. Dah-Chung Chang at National Central University on June 11, 2021.

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0% found this document useful (0 votes)
21 views3 pages

Electronics II 2021 Ex3

The document outlines the exam structure and questions for Electronics II, focusing on circuit analysis involving transistors and current sources. It includes problems related to small-signal analysis, PMOS current mirrors, and multi-transistor current sources, requiring derivations, circuit equations, and calculations. The exam is conducted by Prof. Dah-Chung Chang at National Central University on June 11, 2021.

Uploaded by

jane1034
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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Electronics II, Exam-3, Spring 2021

Department of Communication Engineering, National Central University


11th June, 2021, Prof. Dah-Chung Chang (E1-311)
Note: The scientific calculator is allowed in all Electronics II exams.
1. (35%) In the circuit shown in Fig. 1, the active load circuit is replaced by a current source in
which the PNP transistors Q2 and Q3 are matched. The common-emitter current gain of
transistors is denoted as β. Suppose that I REF is obtained from another ideal current source.
(a) Derive the exact relationship between iE 1 and iC 2 , and explain in what condition we
have iE1  iC 2 . (10%)
(b) To find the output resistance of the current source looking into the collector of Q1 , we
may treat the emitter terminal of Q1 as virtual ground in small-signal analysis for
simplicity. Draw the small-signal equivalent circuit and write out the resistance looking
into the base and collector of Q3 from the emitter terminal of Q1 , and explain the
reason. (10%)
(c) Draw the small-signal equivalent circuit of the current source and show that the output
resistance RC1   ro1 / 2 , using the approximation obtained in (a) and (b). (10%)
(d) Assume that β = 250 for all transistors, and that VAN  150V , VAP =120V , and
I REF =1mA . Determine the small-signal voltage gain vO / vI . (5%)

Fig. 1

1
2. (30%) The circuit in Fig. 2 is a two-transistor PMOS current mirror. Based on the reference
current I REF , we want to design the PMOS transistor M 3 and to evaluate the maximum
output current I O for a given load resistance R.
(a) Write out the circuit equations that are required to obtain I REF , and explain the reason
why you construct those simultaneous equations and the processes how to solve for
I REF . (10%)
(b) Assume that the circuit and transistor parameters of M 1 and M 2 are V   3V ,
V   3V , VTP1  VTP 2   1V , K p1  1mA/V 2 , and K p 2  9mA/V 2 . Suppose that
R  12k  , determine the maximum value of I O such that M 3 remains biased in the
saturation region. (15%)
(c) Determine the ratio parameters (W / L)3 of M 3 given that k p  0.1mA / V 2 and
I O  0.2mA . (5%)

Fig. 2

2
3. (35%) Consider the multi-transistor current source in Fig. 3. Assume that M 1 , M 2 , and M 3
are identical except for their geometry ratios, and the circuit and transistor parameters are
V   5V , VTN  1V , k n  80  A / V 2 , and   0 .
(a) Let I REF  0.1mA and the geometry ratio of M 3 be (W / L)3  4 . Assume that M 1
and M 2 have the same W / L geometry ratio. Determine the ratio and explain how
to use this assumption to obtain that value. (10%)
(b) Suppose that the transistor parameters of M 4 is the same as M 1 except that
4  0.05V  1 . Determine the geometry ratio of M 4 for at least I O1  0.5mA as M 4
remains biased in the saturation region. (10%)
(c) Assume that the transistor parameters of M 5 is the same as M 1 except that
5  0.01V  1 . What is the maximum value of RS for I O 2  40  A ? (5%)
(d) Let RS  10k  . Determine the geometry ratio of M 5 for at least I O 2  40  A as
M 5 remains biased in the saturation region, and determine the output resistance R D 5
looking into the drain terminal of M 5 . (10%)

Fig. 3

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