S T M4532

S amHop Microelectronics C orp. Mar.30, 2005 V er1.1

Dual E nhancement Mode Field E ffect Transistor ( N and P Channel)

P R ODUC T S UMMAR Y (N-C hannel) P R ODUC T S UMMAR Y (P -C hannel)

V DS S ID R DS (ON) ( m W ) Max V DS S ID R DS (ON) ( m W ) Max

40@ V G S = 10V 55@ V G S = -10V

30V 5.5A -30V -4.5A
50@ V G S = 4.5V 85@ V G S = -4.5V

D1 D1 D2 D2
8 7 6 5

S O-8
1
1 2 3 4
S1 G1 S 2 G2

ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted)

P arameter S ymbol N-C hannel P-C hannel Unit
Drain-S ource Voltage V DS 30 -30 V
Gate-S ource Voltage V GS 20 20 V

Drain C urrent-C ontinuous a @ T J =125 C ID 5.5 -4.5 A

b
-P ulsed IDM 23 -18 A

Drain-S ource Diode Forward C urrent a IS 1.7 -1.7 A

Maximum P ower Dissipation a PD 2.0 W

Operating Junction and S torage T J , T S TG -55 to 150 C
Temperature R ange

THE R MAL C HAR AC TE R IS TIC S

Thermal R esistance, Junction-to-Ambient a R JA 62.5 C /W

1
S T M4532
N-Channel E LE CTR ICAL CHAR ACTE R IS TICS (T A =25 C unless otherwise noted)
Parameter S ymbol Condition Min Typ C Max Unit
OFF CHAR ACTE R IS TICS
Drain-S ource Breakdown Voltage BV DS S V GS = 0V, ID = 250uA 30 V
Zero Gate Voltage Drain Current IDS S V DS = 24V, V GS = 0V 1 uA
Gate-Body Leakage IGS S V GS = 20V, V DS = 0V 100 nA
ON CHAR ACTE R IS TICS b
Gate Threshold Voltage V GS (th) V DS = V GS , ID = 250uA 0.8 1.8 V
V GS =10V, ID = 6A 28 40 m ohm
Drain-S ource On-S tate R esistance R DS (ON)
V GS =4.5V, ID = 5.2A 40 50 m ohm

On-S tate Drain Current ID(ON) V DS = 5V, V GS = 10V 15 A

Forward Transconductance gFS V DS = 10V, ID = 6.0A 6 S
c
DYNAMIC CHAR ACTE R IS TICS
Input Capacitance C IS S 510 PF
V DS =8V, V GS = 0V
Output Capacitance C OS S 155 PF
f =1.0MH Z
R everse Transfer Capacitance CRSS 127 PF
c
S WITCHING CHAR ACTE R IS TICS
Turn-On Delay Time tD(ON) V DD = 10V, 15.6 ns
R ise Time tr ID = 1A, 9.7 ns
V GE N = 4.5V,
Turn-Off Delay Time tD(OFF) R L = 10 ohm 26.3 ns
Fall Time tf R GE N = 6 ohm 26.9 ns
Total Gate Charge Qg 9.3 nC
V DS =10V, ID = 6A,
Gate-S ource Charge Q gs 2.5 nC
V GS =4.5V
Gate-Drain Charge Q gd 3.2 nC
2
S T M4532
P-Channel E LE CTR ICAL CHAR ACTE R IS TICS (T A = 25 C unless otherwise noted)
Parameter S ymbol Condition Min Typ C Max Unit
OFF CHAR ACTE R IS TICS
Drain-S ource Breakdown Voltage BV DS S V GS = 0V, ID = -250uA -30 V
Zero Gate Voltage Drain Current IDS S V DS = -24V, V GS = 0V -1 uA
Gate-Body Leakage IGS S V GS = 20V, V DS = 0V 100 nA
ON CHAR ACTE R IS TICS b
Gate Threshold Voltage V GS (th) V DS = V GS , ID = -250uA -1 -1.5 -2.5 V
V GS =-10V, ID = -4.9A 45 55 m ohm
Drain-S ource On-S tate R esistance R DS (ON)
V GS =-4.5V, ID = -3.6A 75 85 m ohm
On-S tate Drain Current ID(ON) V DS = -5V, V GS = -10V -12 A
Forward Transconductance gFS V DS = -15V, ID = - 4.9A 4 S
DYNAMIC CHAR ACTE R IS TICS c
Input Capacitance C IS S 393 PF
V DS =-15V, V GS = 0V
Output Capacitance C OS S 116 PF
f =1.0MH Z
R everse Transfer Capacitance CRSS 45 PF
c
S WITCHING CHAR ACTE R IS TICS
Turn-On Delay Time tD(ON) V D = -15V, 13 ns
R ise Time tr R L = 15 ohm 4.7 ns
ID = -1A,
Turn-Off Delay Time tD(OFF) V GE N = -10V, 47.1 ns
Fall Time tf R GE N = 6 ohm 17 ns
V DS =-15V, ID=-4.9A,V GS =-10V 15.6 nC
Total Gate Charge Qg
V DS =-15V, ID=-4.9A,V GS =-4.5V 7.3 nC
Gate-S ource Charge Q gs V DS =-15V, ID = - 4.9A, 2.4 nC
Gate-Drain Charge Q gd V GS =-10V 3.3 nC
3
S T M4532
E LE CTR ICAL CHAR ACTE R IS TICS (T A=25 C unless otherwise noted)
C
Parameter S ymbol Condition Min Typ Max Unit
DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS b
V G S = 0V, Is =1.7A N-C h 0.77 1.2
Diode Forward Voltage VSD V G S = 0V, Is =-1.7A P -C h -0.82 -1.2 V

Notes
a.S urface Mounted on FR 4 Board, t 10sec.
b.Pulse Test:Pulse Width 300us, Duty Cycle 2%.
c.Guaranteed by design, not subject to production testing.
N-C hannel 10 25

V G S =10,9,8,7,6,5,4,3V
8 20
ID , Drain C urrent(A)

I D , Drain C urrent (A)

6 15

4 10

25 C
T j=125 C
2 V G S =1.5V 5
-55 C
0 0
0 2 4 6 8 10 12 0.0 0.5 1.0 1.5 2.0 2.5 3.0
V DS , Drain-to-S ource Voltage (V ) V G S , G ate-to-S ource Voltage (V )

F igure 1. Output C haracteris tics F igure 2. Trans fer C haracteris tics

1200 1.8
V G S =10V
R DS (ON) , On-R es is tance

1000 1.6 I D =6A

C , C apacitance (pF )

800 1.4
Normalized

600 1.2
C is s

400 1.0

0.8
200
C os s
C rs s 0.6
0
0 2 4 6 8 10 12 -55 -25 0 25 50 75 100 125

V DS , Drain-to S ource Voltage (V ) T J , J unction T emperature ( C )

F igure 3. C apacitance F igure 4. On-R es is tance Variation with

Drain C urrent and Temperature

4
 S T M4532
N-C hannel

1.6 1.15
5

Drain-S ource B reakdown V oltage

G ate-S ource T hres hold V oltage

V DS =V G S 1.10 I D =250uA
1.4
I D =250uA

B V DS S , Normalized
1.2 1.05
V th, Normalized

1.0 1.00

0.8 0.95

0.6 0.90

0.4 0.85
-55 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150

T j, J unction T emperature ( C ) T j, J unction T emperature ( C )

F igure 5. G ate T hres hold V ariation F igure 6. B reakdown V oltage V ariation

with T emperature with T emperature

18 20
gF S , T rans conductance (S )

15 10
Is , S ource-drain current (A)

12

6
V DS =10V 1
3
T J =25 C
0 0
0 5 10 15 20 25 0.4 0.6 0.8 1.0 1.2 1.4

I DS , Drain-S ource C urrent (A) V S D , B ody Diode F orward V oltage (V )

F igure 7. T rans conductance V ariation F igure 8. B ody Diode F orward V oltage
with Drain C urrent V ariation with S ource C urrent

5
 S T M4532
P -C hannel
25 20

-V G S =10,9,8,7,6,5,4,3V 25 C
20 16
T j=125 C
-I D , Drain C urrent (A)

-I D , Drain C urrent (A)

15 12

-55 C
10 8

5 -V G S =1.5V 4

0 0
0 2 4 6 8 10 12 0 0.5 1 1.5 2 2.5 3

-V DS , Drain-to-S ource Voltage (V ) -V G S , G ate-to-S ource Voltage (V )

F igure 1. Output C haracteris tics F igure 2. Trans fer C haracteris tics

600 1.8
R DS (ON) , On-R es is tance(Ohms )

500 1.6 V G S =-10V

I D =-4.9A
C , C apacitance (pF )

C is s
400 1.4
(Normalized)

300 1.2

200 1.0
C os s
100 0.8
C rs s
0 0.6
0 5 10 15 20 25 30 -55 -25 0 25 50 75 100 125

-V DS , Drain-to S ource Voltage (V ) T j, J unction T emperature ( C )

F igure 3. C apacitance F igure 4. On-R es is tance Variation with

Temperature

6
 S T M4532
P -C hannel

1.09 1.15
5

Drain-S ource B reakdown V oltage

G ate-S ource T hres hold V oltage

V DS =V G S I D =-250uA
1.06 I D =-250uA 1.10

B V DS S , Normalized
1.03 1.05
V th, Normalized

1.00 1.00

0.9 0.95

0.6 0.90

0.3 0.85
-50 -25 0 25 50 75 100 125 150 -55 -25 0 25 50 75 100 125 150

T j, J unction T emperature ( C ) T j, J unction T emperature ( C )

F igure 5. G ate T hres hold V ariation F igure 6. B reakdown V oltage V ariation

with T emperature with T emperature

10 20.0
T J =25 C
gF S , T rans conductance (S )

8 10.0
-Is , S ource-drain current (A)

2 1.0
V DS =-15V
0
0 5 10 15 20 0.0 0.5 1.0 1.5 2.0 2.5

-I DS , Drain-S ource C urrent (A) -V S D , B ody Diode F orward V oltage (V )

F igure 7. T rans conductance V ariation F igure 8. B ody Diode F orward V oltage
with Drain C urrent V ariation with S ource C urrent

7
 S T M4532
N-C hannel

50
5 5
V G S , G ate to S ource V oltage (V )

it

I D , Drain C urrent (A)

L im
V DS =10V N)
4 10 (O
I D =6A RD
S
10
ms
10
0m
s
3
11 1s
DC
2

0.1 V G S =10V
1 S ingle P ulse
T c=25 C
0.03
0
0 2 4 6 8 10 12 14 16 0.1 1 10 20 30 50
Q g, T otal G ate C harge (nC ) V DS , Drain-S ource V oltage (V )
F igure 9. G ate C harge F igure 10. Maximum S afe
O perating Area
P -C hannel
40
10
-V G S , G ate to S ource V oltage (V )

V DS =-15V it
8 10 im
I D =-4.9A )L
-I D , Drain C urrent (A)

S(
ON
10m
RD s
100
6 ms

11 1s
4 DC

2 0.1 V G S =-10V
S ingle P ulse
T A =25 C
0 0.03
0 2 4 6 8 10 12 14 16 0.1 1 10 30 50

Q g, T otal G ate C harge (nC ) -V DS , B ody Diode F orward V oltage (V )

F igure 9. G ate C harge F igure 10. Maximum S afe
O perating Area

8
 S T M4532

V DD
ton toff

V IN
RL td(on) tr
90%
td(off)
90%
tf 5
D V OUT
VG S V OUT 10% INVE R TE D 10%
R GE N G
90%
50% 50%
S V IN
10%

P ULS E WIDTH

F igure 11. S witching T es t C ircuit F igure 12. S witching Waveforms

1
T ransient T hermal Impedance

Duty C ycle=0.5
r(t),Normalized E ffective

0.2

0.1 P DM
0.1
0.05 t1
t2

0.02 1. R J A (t)=r (t) * R J A

2. R J A =S ee Datas heet
3. T J M-T A = P DM* R J A (t)
S ingle P uls e 4. Duty C ycle, D=t1/t2
0.01
-4 -3 -2 -1
10 10 10 10 1 10 100

S quare Wave P uls e Duration (s ec)

F igure 13. Normalized T hermal T rans ient Impedance C urve

9
S T M4532
PAC K AG E OUT LINE DIME NS IONS

S O-8

E
D

0.015X45
C
A

0.008
TYP.
A1

e B
0.05 TYP. 0.016 TYP.
H

MILLIME T E R S INC HE S
S Y MB OLS
MIN MAX MIN MAX
A 1.35 1.75 0.053 0.069
A1 0.10 0.25 0.004 0.010
D 4.80 4.98 0.189 0.196
E 3.81 3.99 0.150 0.157
H 5.79 6.20 0.228 0.244
L 0.41 1.27 0.016 0.050
0 8 0 8

10
S T M4532
SO-8 Tape and Reel Data

SO-8 Carrier Tape

unit:
PACKAGE A0 B0 K0 D0 D1 E E1 E2 P0 P1 P2 T
1.5
SOP 8N 1.5 12.0 5.5 8.0 4.0 2.0 0.3
6.40 5.20 2.10 + 0.1 1.75
150 (MIN) 0.3 0.05 0.05 0.05
- 0.0

SO-8 Reel

UNIT:

TAPE SIZE REEL SIZE M N W W1 H K S G R V

12 330 62 12.4 16.8 12.75 2.0

330
1 1.5 + 0.2 - 0.4 + 0.15 0.15

11