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The document contains a series of problems related to the design and analysis of digital circuits using MOS transistors, focusing on DC analysis. It includes calculations for output voltages, DC operating points, and design parameters for various circuits with specified values for voltage, threshold voltage, and transconductance. Each problem provides specific answers for the required parameters, such as drain current and resistance values.

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28 views3 pages

Sheet 1

The document contains a series of problems related to the design and analysis of digital circuits using MOS transistors, focusing on DC analysis. It includes calculations for output voltages, DC operating points, and design parameters for various circuits with specified values for voltage, threshold voltage, and transconductance. Each problem provides specific answers for the required parameters, such as drain current and resistance values.

Uploaded by

Malak Ziad
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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ECEN302

Design and Analysis for Digital Circuits


Dr. Ahmed Madian
Sheet 1

Revision: MOS Transistors


(DC Analysis)

Prob.1: Find Vout for Vin = 1V, 4V, and 8V for the shown circuit, assuming VDD = 10V, VT= 2 V and K=0.5mA/V2 (Ans.
10 V, 5 V, 0.659 V)
VDD

R=5K

Vout

Vin M

Prob.2: Find the DC operating point (IDS,VDS, VGS and mode of operation) for the shown circuit assuming VDD = 10V,
VT= 1 V and K =1 mA/V2

(Ans. IDS=0.5mA, VDS=4.5V, VGS=2 V, Sat. mode) .

VDD

10M R=5K

10M
6K
Prob.3: Find the DC operating point (IDS,VDS, VGS and mode of operation) for the shown circuit assuming VDD = 10V,
VT= -1 V and K =1 mA/V2

(Ans. IDS=0.125mA, VDS=5.5V, VGS= - 0.5 V, Sat. mode).

VDD

32K

10M
4K

Prob.4: For the PMOS transistor shown, VT = -2 V, µ p cox = 8µA / V 2 and L =10um.

Find W of the transistor, and the value of R in order to establish a drain current of 0.1 mA and voltage Vout = 7 V

(Ans. W=250 um, R= 70K).

10V

Vout

R
Prob. 5: Design the circuit in Fig.1 to obtain a current of ID = 80 µA. Find the value required for R and find the
DC voltage VD. Let the NMOS transistor have VT =0.6V, µ n C ox = 200 µA / V 2 , L = 0.8 µm and W = 4 µm

(Ans. R= 25K, VD= 1V).

VDD = 3V

ID
R

VD

Fig.1

Prob.6: Consider the circuit of Fig.1 which is designed in Problem 4 (to which you should refer before solving
this problem). Let the voltage VD be applied to the gate of another transistor M2 as shown in Fig.2. Assume
that M2 is identical to M1. Find the drain current and mode of operation of M2.
VDD = 3V
(Ans. ID2 =80µA, Sat). VDD = 3V

20 Kohm
R

VD
M2

M1

Fig.2

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