CRJQ41N65GCF
华润微电子(重庆)有限公司 SJMOS N-MOSFET 650V, 42mΩ, 85A
Features Product Summary
• CRM(CQ) Super_Junction technology
• Much lower Ron*A performance for On-state efficiency VDS 650V
• Much lower FOM for fast switching efficiency RDS(on)_typ 42mΩ
ID 85A
Applications
100% DVDS Tested
• LED/LCD/PDP TV and monitor Lighting
• Solar/Renewable/UPS-Micro Inverter System 100% Avalanche Tested
• Charger
• Power Supply
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CRJQ41N65GCF
Package Marking and Ordering Information
Part # Marking Package Packing Reel Size Tape Width Qty
CRJQ41N65GCF - TO-247-3L Tube N/A N/A 25pcs
Absolute Maximum Ratings
Parameter Symbol Value Unit
Drain-source voltage VDS 650 V
Continuous drain current
TC = 25°C ID 85 A
TC = 100°C 53
Pulsed drain current (TC = 25°C, tp limited by Tjmax) ID pulse 338 A
Avalanche energy, single pulse (L=30mH, Rg=30Ω) EAS 1500 mJ
Gate-Source voltage VGS ±30 V
Power dissipation (TC = 25°C) Ptot 687 W
Operating junction and storage temperature Tj , T stg -55...+150 °C
©China Resources Microelectronics (Chongqing) Limited Page 1
CRJQ41N65GCF
华润微电子(重庆)有限公司 SJMOS N-MOSFET 650V, 42mΩ, 85A
Thermal Resistance
Value
Parameter Symbol Unit Test Condition
min. typ. max.
Thermal resistance, junction –
RthJC - 0.13 0.18 °C/W
case. Max
Thermal resistance, junction –
RthJA - - 45 °C/W
ambient. Max
Electrical Characteristic (at Tj = 25 °C, unless otherwise specified)
Value
Parameter Symbol Unit Test Condition
min. typ. max.
Static Characteristic
Drain-source breakdown
BVDSS 650 - - V VGS=0V, ID=250uA
voltage
Gate threshold voltage VGS(th ) 3.5 - 4.7 V VDS=VGS,ID=250uA
VDS=650V,VGS=0V
Zero gate voltage drain current IDSS - - 5 µA TC=25°C
- 1000 - TC=150°C
Gate-source leakage current IGSS - - ±100 nA VGS=±30V,VDS=0V
VGS=10V, ID=35A,
Drain-source on-state
RDS(on) - 42 48 mΩ TC=25°C
resistance
- 110 - TC=150°C
Transconductance gfs - 39 - S VDS=20V,ID=35A
Dynamic Characteristic
Input Capacitance Ciss - 6215 9323
Output Capacitance Coss - 253 380 VGS=0V, VDS=100V,
pF
f=1MHz
Reverse Transfer Capacitance Crss - 43 86
Gate Total Charge QG - 168 252
VGS=10V, VDS=480V,
Gate-Source charge Qgs - 57 86 nC
ID=35A, f=1MHz
Gate-Drain charge Qgd - 88 176
Turn-on delay time td(on) - 179 -
Rise time tr - 115 - Tj=25°C, VGS=10V,
ns ID=35A, VDS=400V, Rg=27
Turn-off delay time td(off) - 312 - Ω
Fall time tf - 104 -
Gate resistance RG - 1.0 2 Ω VGS=0V, VDS=0V, f=1MHz
©China Resources Microelectronics (Chongqing) Limited Page 2
CRJQ41N65GCF
华润微电子(重庆)有限公司 SJMOS N-MOSFET 650V, 42mΩ, 85A
Body Diode Characteristic
Value
Parameter Symbol Unit Test Condition
min. typ. max.
Body Diode Forward Voltage VSD 0.7 0.91 1.2 V VGS=0V,ISD=35A
Body Diode Reverse Recovery
trr - 194 388 ns
Time Isd=35A
Body Diode Reverse Recovery dI/dt=100A/us,Vds=400V
Qrr - 1.54 3.1 uC
Charge
©China Resources Microelectronics (Chongqing) Limited Page 3
CRJQ41N65GCF
华润微电子(重庆)有限公司 SJMOS N-MOSFET 650V, 42mΩ, 85A
Typical Performance Characteristics
℃)
Fig 1. Output Characteristics (Tj=25℃ ℃)
Fig 2. Output Characteristics (Tj=150℃
250 120
15V, 13V, 12V 15V, 13V, 12V, 10V
200 100
9V
80
150 10V
ID (A)
ID (A)
60 8V
100
9V 40
50 7V
8V 20
7V 6V
0 VGS=6V 0 5.5V
VGS=5V
0 5 10 15 20 25 0 5 10 15 20 25
VDS (V) VDS (V)
Fig 3: Transfer Characteristics Fig 4: VTH Vs Tj Temperature Characteristics
200 5
180 25°C
160 4 ID=250uA
140
120
3
ID (A)
VTH(V)
100 150°C
80
2
60
40
1
20
0
-20 0 0
2 4 6 8 10 12 14
0 25 50 75 100 125 150
VGS (V)
（℃）
Temperature（
℃)
Fig 5: Rdson Vs Ids Characteristics(Tc=25℃ Fig 6: Rds(on) vs. Temperature
70 3.0
VGS=10V
65 ID=35A
2.5
RDS(on)_Normalized
60
RDS(on) (mΩ)
55 2.0
50 VGS=10V
VGS=20V 1.5
45
40
1.0
35
30 0.5
0 30 60 90 120 150 0 25 50 75 100 125 150 175
ID (A) Tj - Junction Temperature (°C)
©China Resources Microelectronics (Chongqing) Limited Page 4
CRJQ41N65GCF
华润微电子(重庆)有限公司 SJMOS N-MOSFET 650V, 42mΩ, 85A
Fig 7: BVDSS vs. Temperature Fig 8: Rds(on) vs Gate Voltage
1.10 300
ID=35A
1.08 250
RDS(on) (mΩ)
1.06 200
BVdss (Nomalized)
1.04 150
150°C
1.02 100
1.00
25°C
50
0.98 0
0 25 50 75 100 125 150 175 6 7 8 9 10
Tj - Junction Temperature (°C) VGS (V)
Fig 9: Body-diode Forward Characteristics Fig 10: Gate Charge Characteristics
1000 14
VDS=480V
12
ID=35A
IS - Diode Current(A)
100 10
VGS (V)
8
10
6
150˚C 25˚C 4
1
2
0.1 0
0 0.3 0.6 0.9 1.2 1.5 1.8 0 50 100 150 200 250
VSD - Diode Forward Voltage(V) Qg (nC)
Fig 11: Capacitance Characteristics Fig 12: Safe Operating Area
100000 1000
VGS=0V
f=1MHz Limited by 1us
10000 Rds(on)
100
C - Capacitance (PF)
10us
Ciss 100us
1000
10
ID (A)
1ms
100 10ms
Coss
1
10 DC
Crss
1 0.1
Single pulse
Tc=25˚C
0 0.01
0 100 200 300 400 500 600 1 10 100 1000
VDS (V) VDS (V)
©China Resources Microelectronics (Chongqing) Limited Page 5
CRJQ41N65GCF
华润微电子(重庆)有限公司 SJMOS N-MOSFET 650V, 42mΩ, 85A
Fig 13: Max. Transient Thermal Impedance
1
0.1 D=0.5
0.3
ZthJC (˚C/W)
0.1
0.01
0.05
0.02
0.01
0.001
Single pulse
Duty factor D=t1/t2
TJM-TC=PDM*ZthJC(t)
0.0001
1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 1.0E+00
tp (sec)
©China Resources Microelectronics (Chongqing) Limited Page 6
CRJQ41N65GCF
华润微电子(重庆)有限公司 SJMOS N-MOSFET 650V, 42mΩ, 85A
Test Circuit & Waveform
©China Resources Microelectronics (Chongqing) Limited Page 7
CRJQ41N65GCF
华润微电子(重庆)有限公司 SJMOS N-MOSFET 650V, 42mΩ, 85A
Package Outline: TO-247-3L
Dimensions In Millimeters Dimensions In Inches
Symbol
Min. Max. Min. Max.
A 4.83 5.21 0.190 0.205
A1 2.29 2.55 0.090 0.100
A2 1.50 2.49 0.059 0.098
b 1.12 1.33 0.044 0.052
b1 1.12 1.28 0.044 0.050
b2 1.91 2.39 0.075 0.094
b3 1.91 2.34 0.075 0.092
b4 2.87 3.22 0.113 0.127
b5 2.87 3.18 0.113 0.125
c 0.55 0.69 0.022 0.027
c1 0.55 0.65 0.022 0.026
D 20.80 21.10 0.819 0.831
D1 16.25 17.65 0.640 0.695
D2 0.51 1.35 0.020 0.053
E 15.75 16.13 0.620 0.635
E1 13.46 14.16 0.530 0.557
E2 4.32 5.49 0.170 0.216
e 5.44 BSC 0.21 BSC
L 19.81 20.32 0.780 0.800
L1 4.10 4.40 0.161 0.173
ΦP 3.56 3.65 0.140 0.144
ΦP1 7.19 REF 0.28 REF
Q 5.39 6.20 0.212 0.244
S 6.04 6.30 0.238 0.248
©China Resources Microelectronics (Chongqing) Limited Page 8
CRJQ41N65GCF
华润微电子(重庆)有限公司 SJMOS N-MOSFET 650V, 42mΩ, 85A
Marking
NOTE:
NXBBAAAAY
X —Assembly location code
BB —Fab code
AAAA —Lot code
Y —Bin code
Revision History
Revison Date Major changes
1.1 2020-8-14 Update package outline
Disclaimer
Unless otherwise specified in the datasheet, the product is designed and qulified as a standard commercial product and
is not intended for use in applications that require extraordinary levels of quality and reliability, such as automotive,
aviation/aerospace and life-support devices or systems.
Any and all semicondutor products have certain probability to fail or malfunction, which may result in personal injury,
death or property damage. Customer are solely responsible for providing adequate safe measures when design their
systems.
CRM(CQ) reserves the right to improve product design, function and reliability without notice.
©China Resources Microelectronics (Chongqing) Limited Page 9
