2N3904

General Purpose Transistors NPN TO-92

High Speed Switching Features:
• NPN silicon planar switching transistors.
• Fast switching devices exhibiting short turn-off and low saturation voltage characteristics.
• General purpose switching and amplifier applications.

TO-92 Plastic Package Dimensions Minimum Maximum

A 4.32 5.33
B 4.45 5.20
C 3.18 4.19
D 0.41 0.55
E 0.35 0.50
F 5°
G 1.40
1.14
H 1.53
K 12.70 -
Dimensions : Millimetres

Pin Configuration:
1. Collector
2. Base
3. Emitter

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 2N3904
General Purpose Transistors NPN TO-92
Absolute Maximum Ratings
Description Symbol Value Unit

Collector-Emitter Voltage VCEO 40

Collector-Base Voltage VCBO 60 V

Emitter-Base Voltage VEBO 6.0

Collector Current Continuous IC 200 mA

Power Dissipation at Ta = 25°C 625 mW

Derate above 25°C 5.0 mW/°C
PD
Power Dissipation at Tc= 25°C 1.5 W
Derate above 25°C 12 mW/°C
Operating and Storage Tj, Tstg -55 to +150 °C
JunctionTemperature Range

Thermal Resistance

Junction to Case Rth (j-c) 83.3

°C/W
Junction to Ambient Rth (j-a) 200

Electrical Characteristics (Ta = 25°C unless otherwise specified)

Description Symbol Test Condition 2N3904 Unit

Collector-Emitter Voltage *VCEO IC = 10mA, IB = 0 >40

Collector-Base Voltage VCBO IC = 10µA, IE = 0 >60 V

Emitter-Base Voltage VEBO IE = 10µA, IC = 0 >6.0

Collector-Cut off Current ICEX

VCE = 30V, VEB = 3V <50 nA
Base Current IBL

IC = 0.1mA, VCE = 1V
>40
IC = 1mA, VCE = 1V >70
DC Current Gain *hFE IC = 10mA, VCE = 1V 100 - 300 -
IC = 50mA, VCE = 1V >60
IC = 100mA, VCE = 1V >30

*VCE (sat) <0.20

Collector Emitter Saturation Voltage IC = 10mA, IB = 1mA <0.30 V
IC = 50mA, IB = 5mA 0.65 - 0.85 V
Base Emitter Saturation Voltage *VBE (sat)
<0.95

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 2N3904
General Purpose Transistors NPN TO-92
Electrical Characteristics (Ta = 25°C unless otherwise specified)
Description Symbol Test Condition 2N3904 Units

Small Signal Characteristic

Transistors Frequency fT IC = 10mA, VCE = 20V, f = 100MHz >300 MHz

Output Capacitance Cob VCB = 5V, IE = 0, f = 1MHz <4.0

VBE = 0.5V, IC = 0, pF
Input Capacitance Cib <8.0
f = 1MHz All f = kHz
Small Signal Current Gain hfe 100 - 400 -

Input Impedance hie 1.0 - 10 kΩ

IC = 1mA, VCE = 10V
Output Admittance hoe 1.0 - 40 umhos

Voltage Feedback Ratio hre 0.5 - 0.8 x 10-4

Noise Figure NF IC = 100µA, VCE = 5V <5.0 dB

Switching Time

Delay Time td VCC = 3V, VBE = 0.5V

<35
Rise Time tr IC = 10mA, IB1 = 1mA
VCC = 3V, IC = 10mA ns
Storage Time ts <200
IB1 = IB2 = 1mA

Fall Time tf - <50

*Pulse Condition: = 300µs, Duty Cycle = 2%

Specifications
VCE (sat) toff
VCEO IC hFE Ptot Package
Maximum Maximum
Maximum Maximum Minimum at 25°C and Part Number
(V) (ns)
(V) (A) at IC = 10mA (mW) Pin Out
at IC = 10mA at IC = 10mA
40 0.2 0.2 250 100 500 TO-92 2N3904

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