R
BAT29
S E M I C O N D U C T O R SMALL SIGNAL SCHOTTKY DIODES
FEATURES DO-35
Metal-on-silicon junction
Low turn-on voltage
Ultrafast switching speed 1.083(27.5)
MIN
Primarly intended for high level UHF mixers and ultrafast switching applications
JF
The diode is also available in the MiniMELF case with type designation LL29. 0.079(2.0)
MAX
High temperature soldering guaranteed:260℃/10 seconds at terminals DIA
Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
0.150(3.8)
MAX
MECHANICAL DATA
1.083(27.5)
MIN
Case: DO-35 glass case 0.020(0.52)
MAX
Polarity:color band denotes cathode end DIA
Weight: Approx. 0.13 gram
Dimensions in inches and (millimeters)
ABSOLUTE RATINGS(LIMITING VALUES)
Symbols Value Units
Peak Reverse Voltage V
VRRM 5
Forward Continuous Current IF 30 mA
Surge non repetitive forward current tp 1s IFSM 60 mA
Junction and Storage temperature range TSTG -65 to+150 C
TJ -65 to+150 C
Maximum Lead Temperature for Soldering during 10s at 4mm from Case TL 230 C
ELECTRICAL CHARACTERISTICS
Symbols Min. Typ. Max. Unis
Reverse breakover voltage
at IR=100mA VR 5 V
Leakage current at VR=1V IR 50 nA
Forward voltage drop at IF=10mA
Test pulse: tp ≤ 300ms d < 2% VF 0.55 V
Junction Capacitance at VR=0V ,f=1GHz CJ 1.0 pF
Thermal resistance RqJA 400 K/W
JINAN JINGHENG ELECTRONICS CO., LTD. 2-14 HTTP://WWW.JINGHENGGROUP.COM
RATINGS AND CHARACTERISTIC CURVES BAT29
Figure 1. forward current versus forward voltage Figure 2. Capacitance CJ versus reverse applied
(typical values) voltage VR (typical values)
IF(mA) CJ(pF)
2
10 1
Tamb= 25 C
0.8
10
0.6
0.4
Tamb=150 C
Tamb= 25 C
Tamb= -55 C
-1
10
0.2
-2
10
0
0 0.2 0.4 0.6 0.8 1 2 4 6 8 10 VR(V)
VF(V)
Figure 3.Reverse current versus ambient Figure 4.Reverse current versus continuous
temperature Reverse voltage(typical values)
IR(mA) IR(mA)
10 10
90% confidence 125 C
VR=1V
100 C
max.
1 1
typ.
75 C
-1 -1
10 10
50 C
25 C
-2 -2
10 10
-3 -3
10 10
0 25 50 75 100 125 0 1 2 3 84 5 VR(V)
Tamb=( C)
JINAN JINGHENG ELECTRONICS CO., LTD. 2-15 HTTP://WWW.JINGHENGGROUP.COM