SG1626/SG2626/SG3626

DUAL HIGH SPEED DRIVER

DESCRIPTION FEATURES

The SG1626, 2626, 3626 is a dual inverting monolithic high • Pin for pin compatible with DS0026, TSC426 and
speed driver that is pin for pin compatible with the DS0026, ICL7667.
TSC426 and ICL7667. This device utilizes high voltage Schottky • Totem pole outputs with 3.0A peak current capability.
logic to convert TTL signals to high speed outputs up to 18V. The • Supply voltage to 22V.
totem pole outputs have 3A peak current capability, which en- • Rise and fall times less than 25ns.
ables them to drive 1000pF loads in typically less than 25ns. • Propagation delays less than 20ns.
These speeds make it ideal for driving power MOSFETs and • Inverting high-speed high-voltage Schottky logic.
other large capacitive loads requiring high speed switching. • Efficient operation at high frequency.
• Available in:
In addition to the standard packages, Silicon General offers the 8 Pin Plastic and Ceramic DIP
16 pin S.O.I.C. (DW-package) for commercial and industrial 14 Pin Ceramic DIP
applications, and the Hermetic TO-66 (R-package) for military 16 Pin Plastic S.O.I.C.
use. These packages offer improved thermal performance for 20 Pin LCC
applications requiring high frequencies and/or high peak cur- TO-99
rents. TO-66

HIGH RELIABILITY FEATURES - SG1626

♦ Available to MIL-STD-883
♦ Radiation data available
♦ LMI level"S" processing available

EQUIVALENT CIRCUIT SCHEMATIC

VCC

6.5V
VREG

2.5K 3K

INV. INPUT OUTPUT

GND

9/91 Rev 1.1 2/94 LINFINITY Microelectronics Inc.

Copyright  1994 11861 Western Avenue ∞ Garden Grove, CA 92841
1 (714) 898-8121 ∞ FAX: (714) 893-2570
 SG1626/SG2626/SG3626
ABSOLUTE MAXIMUM RATINGS (Note 1)
Supply Voltage (VCC) ........................................................... 22V Operating Junction Temperature
Logic Input Voltage ............................................................... 7V Hermetic (J, T, Y, R-Packages) ................................... 150°C
Source/Sink Output Current (Each Output) Plastic (M, DW, L-Packages) ....................................... 150°C
Continuous ................................................................... ±0.5A Storage Temperature Range ............................ -65°C to 150°C
Pulse, 500ns ................................................................ ±3.0A Lead Temperature (Soldering, 10 Seconds) ................... 300°C
Note 1. Exceeding these ratings could cause damage to the device. All voltages are with respect to ground. All currents are positive into the
specified terminal.

THERMAL DATA
J Package:
Thermal Resistance-Junction to Case, θ JC .................. 30°C/W R Package:
Thermal Resistance-Junction to Ambient, θ JA .............. 80°C/W Thermal Resistance-Junction to Case, θJC ................. 5.0°C/W
Y Package: Thermal Resistance-Junction to Ambient, θ JA ............. 40°C/W
Thermal Resistance-Junction to Case, θ JC .................. 50°C/W L Package:
Thermal Resistance-Junction to Ambient, θ JA ............ 130°C/W Thermal Resistance-Junction to Case, θJC .................. 35°C/W
M Package: Thermal Resistance-Junction to Ambient, θ JA ........... 120°C/W
Thermal Resistance-Junction to Case, θ JC .................. 60°C/W
Thermal Resistance-Junction to Ambient, θ JA ............. 95°C/W Note A. Junction Temperature Calculation: TJ = TA + (PD x θJA).
DW Package: Note B. The above numbers for θ JC are maximums for the limiting
Thermal Resistance-Junction to Case, θ JC .................. 40°C/W thermal resistance of the package in a standard mount-
Thermal Resistance-Junction to Ambient, θ JA .............. 95°C/W ing configuration. The θ JA numbers are meant to be
T Package: guidelines for the thermal performance of the device/pc-
board system. All of the above assume no ambient
Thermal Resistance-Junction to Case, θ JC .................. 25°C/W
Thermal Resistance-Junction to Ambient, θ JA ........... 130°C/W airflow.

RECOMMENDED OPERATING CONDITIONS (Note 2)

Supply Voltage (VCC) .................................. 4.5V to 20V (Note 3) Operating Ambient Temperature Range (TJ)
Frequency Range ............................................... DC to 1.5MHz SG1626 ......................................................... -55°C to 125°C
Peak Pulse Current ............................................................ ±3A SG2626 ........................................................... -25°C to 85°C
Logic Input Voltage ................................................ -0.5 to 5.5V SG3626 .............................................................. 0°C to 70°C
Note 2. Range over which the device is functional.
Note 3. AC performance has been optimized for VCC = 8V to 20V.

ELECTRICAL CHARACTERISTICS
(Unless otherwise specified, these specfiications apply over the operating ambient temperatures for SG1626 with -55°C ≤ TA ≤ 125°C, SG2626 with -
25°C ≤ TA ≤ 85°C, SG3626 with 0°C ≤ TA ≤ 70°C, and VCC = 20V. Low duty cycle pulse testing techniques are used which maintains junction and case
temperatures equal to the ambient temperature.)

SG1626/2626/3626
Parameter Test Conditions Units
Min. Typ. Max.
Static Characteristics
Logic 1 Input Voltage 2.0 V
Logic 0 Input Voltage 0.7 V
Input High Current VIN = 2.4V 500 µA
Input High Current VIN = 5.5V 1.0 mA
Input Low Current VIN = 0V -4 mA
Input Clamp Voltage IIN = -10mA -1.5 V
Output High Voltage (Note 4) IOUT = -200mA VCC-3 V
Output Low Voltage (Note 4) IOUT = 200mA 1.0 V
Supply Current Outputs Low VIN = 2.4V (both inputs) 18 27 mA
Supply Current Outputs High VIN = 0V (both inputs) 7.5 12 mA
Note 4. VCC = 10V to 20V.

9/91 Rev 1.1 2/94 LINFINITY Microelectronics Inc.

Copyright  1994 11861 Western Avenue ∞ Garden Grove, CA 92841
2 (714) 898-8121 ∞ FAX: (714) 893-2570
 SG1626/SG2626/SG3626
ELECTRICAL CHARACTERISTICS (continued)

SG1626/2626/3626 SG1626
Parameter Test Conditions (Figure 1) TA= 25°°C TA=-55°°C to 125°°C Units
Min. Typ. Max. Min. Typ. Max.
Dynamic Characteristics (Note 6)
Propagation Delay High-Low CL = 1000pF (Note 5) 18 30 ns
(TPHL) CL = 2500pF 17 25 40 ns
Propagation Delay Low-High CL = 1000pF (Note 5) 25 40 ns
(TPLH) CL = 2500pF 25 35 50 ns
Rise Time (TTLH) CL = 1000pF (Note 5) 30 35 ns
CL = 2500pF 30 40 50 ns
Fall Time (TTHL) CL = 1000pF (Note 5) 20 30 ns
CL = 2500pF 30 40 50 ns
Supply Current (ICC) CL = 2500pF, Freq. = 200KHz
(both outputs) Duty Cycle = 50% 30 35 40 mA
Note 5. These parameters, specified at 1000pF, although guaranteed over recommended operating conditions, are not 100% tested in produc-
tion.
Note 6. VCC = 15V.

AC TEST CIRCUIT AND SWITCHING TIME WAVEFORMS - FIGURE 1

SG1626

CHARACTERISTIC CURVES

FIGURE 2. FIGURE 3. FIGURE 4.

TRANSITION TIMES VS. SUPPLY VOLTAGE PROPAGATION DELAY VS. SUPPLY VOLTAGE TRANSITION TIMES VS. AMBIENT TEMPERATURE

9/91 Rev 1.1 2/94 LINFINITY Microelectronics Inc.

Copyright  1994 11861 Western Avenue ∞ Garden Grove, CA 92841
3 (714) 898-8121 ∞ FAX: (714) 893-2570
 SG1626/SG2626/SG3626
CHARACTERISTIC CURVES (continued)

FIGURE 5. FIGURE 6. FIGURE 7.

PROPAGATION DELAY VS. AMBIENT TEMPERATURE TRANSITION TIMES VS. CAPACITIVE LOAD SUPPLY CURRENT VS. CAPACITANCE LOAD

FIGURE 8. FIGURE 9. FIGURE 10.

HIGH SIDE SATURATION VS. OUTPUT CURRENT LOW SIDE SATURATION VS. OUTPUT CURRENT SUPPLY CURRENT VS. FREQUENCY

FIGURE 11.
SUPPLY CURRENT VS. FREQUENCY

9/91 Rev 1.1 2/94 LINFINITY Microelectronics Inc.

Copyright  1994 11861 Western Avenue ∞ Garden Grove, CA 92841
4 (714) 898-8121 ∞ FAX: (714) 893-2570
 SG1626/SG2626/SG3626
APPLICATION INFORMATION
POWER DISSIPATION tions, a CK05 or CK06 ceramic operator with a CSR-13 tantalum
capacitor is an effective combination. For commercial applica-
The SG1626, while more energy-efficient than earlier gold-doped
tions, any low-inductance ceramic disk capacitor teamed with a
driver IC’s, can still dissipate considerable power because of its
Sprague 150D or equivalent low ESR capacitor will work well.
high peak current capability at high frequencies. Total power
The capacitors must be located as close as physically possible to
dissipation in any specific application will be the sum of the DC or
the VCC pin, with combined lead and pc board trace lengths held
steady-state power dissipation, and the AC dissipation caused by
to less than 0.5 inches.
driving capacitive loads.
GROUNDING CONSIDERATIONS
The DC power dissipation is given by:
Since ground is both the reference potential for the driver logic
PDC = +VCC · ICC [1] and the return path for the high peak output currents of the driver,
use of a low-inductance ground system is essential. A ground
where ICC is a function of the driver state, and hence is duty-cycle plane is highly recommended for best performance. In dense,
dependent. high performance applications a 4-layer pc board works best; the
2 inner planes are dedicated to power and ground distribution,
The AC power dissipation is proportional to the switching fre- and signal traces are carried by the outside layers. For cost-
quency, the load capacitance, and the square of the output sensitive designs a 2-layer board can be made to work, with one
voltage. In most applications, the driver is constantly changing layer dedicated completely to ground, and the other to power and
state, and the AC contribution becomes dominant when the signal distribution. A great deal of attention to component layout
frequency exceeds 100-200KHz. and interconnect routing is required for this approach.

The SG1626 driver family is available in a variety of packages to LOGIC INTERFACE

accommodate a wide range of operating temperatures and
The logic input of the 1626 is designed to accept standard DC-
power dissipation requirements. The Absolute Maximums sec-
coupled 5 volt logic swings, with no speed-up capacitors re-
tion of the data sheet includes two graphs to aid the designer in
quired. If the input signal voltage exceeds 6 volts, the input pin
choosing an appropriate package for his design.
must be protected against the excessive voltage in the HIGH
state. Either a high speed blocking diode must be used, or a
The designer should first determine the actual power dissipation
resistive divider to attenuate the logic swing is necessary.
of the driver by referring to the curves in the data sheet relating
operating current to supply voltage, switching frequency, and
LAYOUT FOR HIGH SPEED
capacitive load. These curves were generated from data taken
on actual devices. The designer can then refer to the Absolute The SG1626 can generate relatively large voltage excursions
Maximum Thermal Dissipation curves to choose a package type, with rise and fall times around 20-30 nanoseconds with light
and to determine if heat-sinking is required. capacitive loads. A Fourier analysis of these time domain signals
will indicate strong energy components at frequencies much
DESIGN EXAMPLE higher than the basic switching frequency. These high frequen-
cies can induce ringing on an otherwise ideal pulse if sufficient
Given: Two 2500 pF loads must be driven push-pull from a +15
inductance occurs in the signal path (either the positive signal
volt supply at 100KHz. This is a commercial application where
trace or the ground return). Overshoot on the rising edge is
the maximum ambient temperature is +50°C, and cost is impor-
undesirable because the excess drive voltage could rupture the
tant.
gate oxide of a power MOSFET. Trailing edge undershoot is
dangerous because the negative voltage excursion can forward-
1. From Figure 11, the average driver current consumption
bias the parasitic PN substrate diode of the driver, potentially
under these conditions will be 18mA, and the power dissipation
causing erratic operation or outright failure.
will be 15volts x 18mA, or 270mW.
Ringing can be reduced or eliminated by minimizing signal path
2. From the Ambient Thermal Characteristic curve, it can be
inductance, and by using a damping resistor between the drive
seen that the M package, which is an 8-pin plastic DIP with a
output and the capacitive load. Inductance can be reduced by
copper lead frame, has more than enough thermal conductance
keeping trace lengths short, trace widths wide, and by using 2oz.
from junction to ambient to support operation at an ambient
copper if possible. The resistor value for critical damping can be
temperature of +50°C. The SG3626M driver would be specified
calculated from:
for this application.
RD = 2√L/CL [2]
SUPPLY BYPASSING
Since the SG1626 can deliver peak currents above 3amps under where L is the total signal line inductance, and CL is the load
some load conditions, adequate supply bypassing is essential for capacitance. Values between 10 and 100ohms are usually
proper operation. Two capacitors in parallel are recommended sufficient. Inexpensive carbon composition resistors are best
to guarantee low supply impedance over a wide bandwidth: a because they have excellent high frequency characteristics.
0.1µF ceramic disk capacitor for high frequencies, and a 4.7µF They should be located as close as possible to the gate terminal
solid tantalum capacitor for energy storage. In military applica- of the power MOSFET.

9/91 Rev 1.1 2/94 LINFINITY Microelectronics Inc.

Copyright  1994 11861 Western Avenue ∞ Garden Grove, CA 92841
5 (714) 898-8121 ∞ FAX: (714) 893-2570
 SG1626/SG2626/SG3626
TYPICAL APPLICATIONS

FIGURE 12.
When the SG3626 is driven from a totem-pole source with a peak output greater than 6 volts, a low-current, fast-switching blocking
diode is required at each logic input for protection. In this push-pull converter, the inverted logic outputs of the 3527A are ideal
control sources for the power driver.

FIGURE 13.
In this forward converter circuit, the control capabilities of the SG3524B PWM are combined with the powerful totem-pole drivers
found in the SG3626. This inexpensive configuration results in very fast charge and discharge of the power MOSFET gate
capacitance for efficient swithing.

9/91 Rev 1.1 2/94 LINFINITY Microelectronics Inc.

Copyright  1994 11861 Western Avenue ∞ Garden Grove, CA 92841
6 (714) 898-8121 ∞ FAX: (714) 893-2570
 SG1626/SG2626/SG3626
TYPICAL APPLICATIONS (continued)

FIGURE 14.
In half or full-bridge power supplies, driving the isolation transformers directly from the PWM can cause excessive IC temperatures,
expecially above 100KHz. This circuit uses the high drive capacity of the SG3626 to solve the problem.

FIGURE 15.
A low-impedance resistive divider network can also be used as the interface between the PWM high-voltage logic output and the
SG3626 power driver. In this 200KHz current mode converter, the SG3847 provides control, while the SG3626 provides high
power drive and minimizes ground spiking in the control IC.

9/91 Rev 1.1 2/94 LINFINITY Microelectronics Inc.

Copyright  1994 11861 Western Avenue ∞ Garden Grove, CA 92841
7 (714) 898-8121 ∞ FAX: (714) 893-2570
 SG1626/SG2626/SG3626
CONNECTION DIAGRAMS & ORDERING INFORMATION (See Notes Below)

Ambient
Package Part No. Connection Diagram
Temperature Range

14-PIN CERAMIC DIP SG1626J/883B -55°C to 125°C N.C. 1 14 VCC

J - PACKAGE SG1626J/DESC -55°C to 125°C N.C. 2 13 N.C.
OUT A 3 12 OUT B
SG1626J -55°C to 125°C
N.C. 4 11 N.C.
SG2626J -25°C to 85°C IN A 5 10 IN B
SG3626J 0°C to 70°C N.C. 6 9 N.C.
GROUND 7 8 N.C.

8-PIN CERAMIC DIP SG1626Y/883B -55°C to 125°C

Y - PACKAGE SG1626Y/DESC -55°C to 125°C
SG1626Y -55°C to 125°C N.C. 1 8 N.C.
IN A 2 7 OUT A
SG2626Y -25°C to 85°C
GROUND 3 6 VCC
SG3626Y 0°C to 70°C 5
IN B 4 OUT B
8-PIN PLASTIC DIP SG2626M -25°C to 85°C
M - PACKAGE SG3626M 0°C to 70°C

16-PIN WIDE BODY SG2626DW -25°C to 85°C

PLASTIC S.O.I.C. SG3626DW 0°C to 70°C N.C. 1 16 N.C.
DW - PACKAGE IN A 2 15 OUT A
N.C. 3 14 VCC
GROUND 4 13 GROUND
GROUND 5 12 GROUND
N.C. 6 11 VCC
IN B 7 10 OUT B
N.C. 8 9 N.C.

8-PIN TO-99 METAL CAN SG1626T/883B -55°C to 125°C VCC

T - PACKAGE SG1626T/DESC -55°C to 125°C 8
OUT A OUT B
1 7
SG1626T -55°C to 125°C
SG2626T -25°C to 85°C N.C. 2 6 N.C.
SG3626T 0°C to 70°C
3 5
IN A 4 IN B
GND

5-PIN TO-66 METAL CAN SG1626R/883B -55°C to 125°C

R - PACKAGE SG1626R/DESC -55°C to 125°C
VCC
SG1626R -55°C to 125°C
3
SG2626R -25°C to 85°C OUT B OUT A
4 2
SG3626R 0°C to 70°C
5 1
IN B IN A

CASE IS GROUND
Note: Case and tab are
internally connected to
substrate ground.

(Note 4) 1. N.C. 3 2 1 20 19 11. N.C.

20-PIN CERAMIC (LCC) SG1626L/883B -55°C to 125°C 2. GROUND 12. N.C.
LEADLESS CHIP CARRIER 3. N.C. 13. OUT B
4 18
L- PACKAGE 4. IN A 5 17 14. N.C.
5. N.C. 15. Vcc
6 16
6. GROUND 16. N.C.
7 15
7. N.C. 17. Vcc
8 14
8. IN B 18. N.C.
9. N.C. 19. OUT A
9 10 11 12 13
10. GROUND 20. N.C.

Note 1. Contact factory for JAN and DESC product availablity.

2. All packages are viewed from the top.

9/91 Rev 1.1 2/94 LINFINITY Microelectronics Inc.

Copyright  1994 11861 Western Avenue ∞ Garden Grove, CA 92841
8 (714) 898-8121 ∞ FAX: (714) 893-2570
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